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    RESISTOR IN SIL Search Results

    RESISTOR IN SIL Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    74F433SPC Rochester Electronics LLC FIFO, Visit Rochester Electronics LLC Buy
    74F403SPC Rochester Electronics LLC Replacement for Fairchild part number 74F403SPC. Buy from authorized manufacturer Rochester Electronics. Visit Rochester Electronics LLC Buy
    CY7C429-20VC Rochester Electronics LLC FIFO, 2KX9, 20ns, Asynchronous, CMOS, PDSO28, 0.300 INCH, SOJ-28 Visit Rochester Electronics LLC Buy
    CY7C429-25JI Rochester Electronics LLC FIFO, 2KX9, 25ns, Asynchronous, CMOS, PQCC32, PLASTIC, LCC-32 Visit Rochester Electronics LLC Buy
    CY7C4285-15ASC Rochester Electronics LLC FIFO, 64KX18, 10ns, Synchronous, CMOS, PQFP64, 10 X 10 MM, TQFP-64 Visit Rochester Electronics LLC Buy

    RESISTOR IN SIL Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    rt2n2

    Abstract: No abstract text available
    Text: RT2N26M COMPOSITE TRANSISTOR WITH RESISTOR FOR SWITCHING APPLICATION SILICON NPN EPITAXIAL TYPE OUTLINE DRAWING DESCRIPTION Unit:mm 2.1 RT2N26M is a composite transistor with built-in bias resistor 1.25 0.2 FEATURE ●Built-in bias resistor R2=10KΩ ①


    Original     		PDF RT2N26M RT2N26M SC-88A 25RTr1 rt2n2

    RT2N23M

    Abstract: No abstract text available
    Text: RT2N23M COMPOSITE TRANSISTOR WITH RESISTOR FOR SWITCHING APPLICATION SILICON NPN EPITAXIAL TYPE OUTLINE DRAWING DESCRIPTION Unit:mm 2.1 RT2N23M is a composite transistor with built-in bias resistor 1.25 0.2 FEATURE ●Built-in bias resistor R1=47 KΩ ①


    Original     		PDF RT2N23M RT2N23M

    RT2P21M

    Abstract: No abstract text available
    Text: RT2P21M COMPOSITE TRANSISTOR WITH RESISTOR FOR SWITCHING APPLICATION SILICON PNP EPITAXIAL TYPE OUTLINE DRAWING DESCRIPTION Unit:mm 2.1 RT2P21M is a composite transistor with built-in bias resistor 1.25 0.2 FEATURE ●Built-in bias resistor R1=10 KΩ ①


    Original     		PDF RT2P21M RT2P21M 25RTr1RTr2

    RT2N21M

    Abstract: B05M
    Text: RT2N21M COMPOSITE TRANSISTOR WITH RESISTOR FOR SWITCHING APPLICATION SILICON NPN EPITAXIAL TYPE OUTLINE DRAWING DESCRIPTION Unit:mm 2.1 RT2N21M is a composite transistor with built-in bias resistor 1.25 0.2 FEATURE ●Built-in bias resistor R1=10 KΩ ①


    Original     		PDF RT2N21M RT2N21M B05M

    RT2N20M

    Abstract: No abstract text available
    Text: RT2N20M COMPOSITE TRANSISTOR WITH RESISTOR FOR SWITCHING APPLICATION SILICON NPN EPITAXIAL TYPE OUTLINE DRAWING DESCRIPTION Unit:mm 2.1 RT2N20M is a composite transistor with built-in bias resistor 1.25 0.2 FEATURE ●Built-in bias resistor R1=4.7 KΩ ①


    Original     		PDF RT2N20M RT2N20M

    RT2P20M

    Abstract: No abstract text available
    Text: RT2P20M COMPOSITE TRANSISTOR WITH RESISTOR FOR SWITCHING APPLICATION SILICON PNP EPITAXIAL TYPE OUTLINE DRAWING DESCRIPTION Unit:mm 2.1 RT2P20M is a composite transistor with built-in bias resistor 1.25 0.2 FEATURE ●Built-in bias resistor R1=4.7 KΩ ①


    Original     		PDF RT2P20M RT2P20M

    Untitled

    Abstract: No abstract text available
    Text: RT2P02M COMPOSITE TRANSISTOR WITH RESISTOR FOR SWITCHING APPLICATION SILICON PNP EPITAXIAL TYPE OUTLINE DRAWING DESCRIPTION Unit:mm RT2P02M is a composite transistor with built-in bias resistor FEATURE ●Built-in bias resistor R1=4.7 KΩ , R2=4.7 KΩ


    Original     		PDF RT2P02M RT2P02M 25RTr1RTr2

    RT2N08M

    Abstract: No abstract text available
    Text: RT2N08M COMPOSITE TRANSISTOR WITH RESISTOR FOR SWITCHING APPLICATION SILICON NPN EPITAXIAL TYPE OUTLINE DRAWING DESCRIPTION Unit:mm 2.1 RT2N08M is a composite transistor with built-in bias resistor 1.25 0.2 FEATURE ●Built-in bias resistor R1=2.2 KΩ , R2=10KΩ


    Original     		PDF RT2N08M RT2N08M

    RT2P09M

    Abstract: No abstract text available
    Text: RT2P09M COMPOSITE TRANSISTOR WITH RESISTOR FOR SWITCHING APPLICATION SILICON PNP EPITAXIAL TYPE OUTLINE DRAWING DESCRIPTION Unit:mm 2.1 RT2P09M is a composite transistor with built-in bias resistor 1.25 0.2 FEATURE ●Built-in bias resistor R1=2.2 KΩ , R2=47KΩ


    Original     		PDF RT2P09M RT2P09M JEITASC-88A

    RT2N12M

    Abstract: No abstract text available
    Text: RT2N12M COMPOSITE TRANSISTOR WITH RESISTOR FOR SWITCHING APPLICATION SILICON NPN EPITAXIAL TYPE OUTLINE DRAWING DESCRIPTION Unit:mm 2.1 RT2N12M is a composite transistor with built-in bias resistor 1.25 0.2 FEATURE ●Built-in bias resistor R1=4.7 KΩ , R2=47KΩ


    Original     		PDF RT2N12M RT2N12M

    RT2N09M

    Abstract: No abstract text available
    Text: RT2N09M COMPOSITE TRANSISTOR WITH RESISTOR FOR SWITCHING APPLICATION SILICON NPN EPITAXIAL TYPE OUTLINE DRAWING DESCRIPTION Unit:mm 2.1 RT2N09M is a composite transistor with built-in bias resistor 1.25 0.2 FEATURE ●Built-in bias resistor R1=2.2 KΩ , R2=47KΩ


    Original     		PDF RT2N09M RT2N09M

    RT2P03M

    Abstract: rt2p03
    Text: RT2P03M COMPOSITE TRANSISTOR WITH RESISTOR FOR SWITCHING APPLICATION SILICON PNP EPITAXIAL TYPE OUTLINE DRAWING DESCRIPTION Unit:mm 2.1 RT2P03M is a composite transistor with built-in bias resistor 1.25 0.2 FEATURE ●Built-in bias resistor R1=10 KΩ , R2=10KΩ


    Original     		PDF RT2P03M RT2P03M rt2p03

    RT2N03M

    Abstract: No abstract text available
    Text: RT2N03M COMPOUND TRANSISTOR WITH RESISTOR FOR SWITCHING APPLICATION SILICON NPN EPITAXIAL TYPE OUTLINE DRAWING DESCRIPTION Unit:mm 2.1 RT2N03M is a compound transistor with built-in bias resistor 1.25 0.2 FEATURE ●Built-in bias resistor R1=10 KΩ , R2=10KΩ


    Original     		PDF RT2N03M RT2N03M SC-88A

    RT2N03M

    Abstract: rt2n03
    Text: RT2N03M COMPOUND TRANSISTOR WITH RESISTOR FOR SWITCHING APPLICATION SILICON NPN EPITAXIAL TYPE OUTLINE DRAWING DESCRIPTION Unit:mm 2.1 RT2N03M is a compound transistor with built-in bias resistor 1.25 0.2 FEATURE ●Built-in bias resistor R1=10 KΩ , R2=10KΩ


    Original     		PDF RT2N03M RT2N03M SC-88A rt2n03

    R247k

    Abstract: RT2P12M rt2p12
    Text: RT2P12M COMPOSITE TRANSISTOR WITH RESISTOR FOR SWITCHING APPLICATION SILICON PNP EPITAXIAL TYPE OUTLINE DRAWING DESCRIPTION Unit:mm 2.1 RT2P12M is a composite transistor with built-in bias resistor 1.25 0.2 FEATURE ●Built-in bias resistor R1=4.7 KΩ , R2=47KΩ


    Original     		PDF RT2P12M RT2P12M JEITASC-88A R247k rt2p12

    RT2N05M

    Abstract: No abstract text available
    Text: RT2N05M COMPOSITE TRANSISTOR WITH RESISTOR FOR SWITCHING APPLICATION SILICON NPN EPITAXIAL TYPE OUTLINE DRAWING DESCRIPTION Unit:mm RT2N05M is a compoｓｉｔｅ transistor with built-in bias resistor FEATURE ●Built-in bias resistor R1=47 KΩ , R2=47KΩ


    Original     		PDF RT2N05M RT2N05M 25RTr1RTr2

    RT2N14M

    Abstract: No abstract text available
    Text: RT2N14M COMPOSITE TRANSISTOR WITH RESISTOR FOR SWITCHING APPLICATION SILICON NPN EPITAXIAL TYPE OUTLINE DRAWING DESCRIPTION Unit:mm 2.1 RT2N14M is a composite transistor with built-in bias resistor 1.25 0.2 FEATURE ●Built-in bias resistor R1=10KΩ , R2=47KΩ


    Original     		PDF RT2N14M RT2N14M JEITASC-88A

    RT2N18M

    Abstract: No abstract text available
    Text: RT2N18M COMPOSITE TRANSISTOR WITH RESISTOR FOR SWITCHING APPLICATION SILICON NPN EPITAXIAL TYPE OUTLINE DRAWING DESCRIPTION Unit:mm RT2N18M is a compoｓｉｔｅ transistor with built-in bias resistor FEATURE ●Built-in bias resistor R1=1.0 KΩ ●Mini package for easy mounting


    Original     		PDF RT2N18M RT2N18M JEITASC-88A 25RTr1RTr2

    RT2N07M

    Abstract: No abstract text available
    Text: RT2N07M COMPOSITE TRANSISTOR WITH RESISTOR FOR SWITCHING APPLICATION SILICON NPN EPITAXIAL TYPE OUTLINE DRAWING DESCRIPTION Unit:mm 2.1 RT2N07M is a compoｓ ｉ ｔ ｅ transistor with built-in bias resistor 1.25 0.2 FEATURE ●Built-in bias resistor R1=1 KΩ , R2=10KΩ


    Original     		PDF RT2N07M RT2N07M

    RT1N241

    Abstract: RT2N04M
    Text: RT2N04M COMPOSITE TRANSISTOR WITH RESISTOR FOR SWITCHING APPLICATION SILICON NPN EPITAXIAL TYPE OUTLINE DRAWING DESCRIPTION Unit:mm 2.1 RT2N04M is a compoｓ ｉ ｔ ｅtransistor with built-in bias resistor 1.25 0.2 FEATURE ●Built-in bias resistor R1=22 KΩ , R2=22KΩ


    Original     		PDF RT2N04M RT2N04M RT1N241

    RT2N07M

    Abstract: No abstract text available
    Text: RT2N07M COMPOSITE TRANSISTOR WITH RESISTOR FOR SWITCHING APPLICATION SILICON NPN EPITAXIAL TYPE OUTLINE DRAWING DESCRIPTION Unit:mm 2.1 RT2N07M is a compoｓ ｉ ｔ ｅ transistor with built-in bias resistor 1.25 0.2 FEATURE ●Built-in bias resistor R1=1 KΩ , R2=10KΩ


    Original     		PDF RT2N07M RT2N07M

    z35s

    Abstract: RT2N05M
    Text: RT2N05M COMPOSITE TRANSISTOR WITH RESISTOR FOR SWITCHING APPLICATION SILICON NPN EPITAXIAL TYPE OUTLINE DRAWING DESCRIPTION Unit:mm 2.1 RT2N05M is a compoｓｉｔｅ transistor with built-in bias resistor 1.25 0.2 FEATURE ●Built-in bias resistor R1=47 KΩ , R2=47KΩ


    Original     		PDF RT2N05M RT2N05M 25RTr1RTr2 z35s

    RT1N241

    Abstract: RT2N04M
    Text: RT2N04M COMPOSITE TRANSISTOR WITH RESISTOR FOR SWITCHING APPLICATION SILICON NPN EPITAXIAL TYPE OUTLINE DRAWING DESCRIPTION Unit:mm 2.1 RT2N04M is a compoｓ ｉ ｔ ｅtransistor with built-in bias resistor 1.25 0.2 FEATURE ●Built-in bias resistor R1=22 KΩ , R2=22KΩ


    Original     		PDF RT2N04M RT2N04M RT1N241

    RT5N141C

    Abstract: RT5N141
    Text: RT5N141C Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type DESCRIPTION OUTLINE DRAWING Unit: mm RT5N141C is a one chip transistor with built-in bias 2.5 resistor. 0.5 1.5 0.5 ① ② 0.4 0.95 2.9 1.90 Built-in bias resistor （R1=10kΩ, R2=10kΩ）


    Original     		PDF RT5N141C RT5N141C SC-59 RT5N141