RT5N431C
Abstract: RT5N431
Text: RT5N431C Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type DESCRIPTION OUTLINE DRAWING RT5N431C is a one chip transistor with built-in bias Unit: mm 2.5 resistor. 0.5 1.5 0.5 ① ② 0.4 0.95 2.9 1.90 Built-in bias resistor （R1=4.7kΩ, R2=4.7kΩ）
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RT5N431C
RT5N431C
JEITASC-59
RT5N431
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RT5P141C
Abstract: No abstract text available
Text: RT5P141C Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type DESCRIPTION OUTLINE DRAWING Unit: mm RT5P141C is a one chip transistor with built-in bias 2.5 resistor. 0.5 1.5 0.5 ① ② 0.4 0.95 2.9 1.90 Built-in bias resistor （R1=10kΩ, R2=10kΩ）
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RT5P141C
RT5P141C
JEITASC-59
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RT5N141C
Abstract: No abstract text available
Text: RT5N141C Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type DESCRIPTION OUTLINE DRAWING RT5N141C is a one chip transistor with built-in bias Unit: mm 2.5 resistor. 0.5 1.5 0.5 ① ② 0.4 0.95 2.9 1.90 Built-in bias resistor （R1=10kΩ, R2=10kΩ）
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RT5N141C
RT5N141C
JEITASC-59
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RT5P430C
Abstract: rt5p430
Text: PRELIMINARY RT5P430C Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type OUTLINE DRAWING DESCRIPTION Unit: mm RT5P430C is a one chip transistor with built-in bias 2.5 resistor, NPN type is RT5N430C. 0.5 1.5 0.5 2.9 1.90 0.95 0.95
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RT5P430C
RT5P430C
RT5N430C.
SC-59
rt5p430
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RT5P230C
Abstract: RT5N230C
Text: PRELIMINARY RT5P230C Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type OUTLINE DRAWING DESCRIPTION Unit: mm RT5P230C is a one chip transistor with built-in bias 2.5 resistor, NPN type is RT5N230C. 0.5 1.5 0.5 ① ② 0.4 0.95 2.9
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RT5P230C
RT5P230C
RT5N230C.
JEITASC-59
RT5N230C
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24v 5a smps
Abstract: 24V 10A SMPS SMPS 24V MAX1999 ultrasonic pulse generator kit SMPS CIRCUIT DIAGRAM 5V 20A 12v 5a smps 24v smps computer smps circuit MAX1777
Text: 19-2187; Rev 0; 4/02 High-Efficiency, Quad Output, Main PowerSupply Controllers for Notebook Computers Applications Features ♦ No Current-Sense Resistor Needed MAX1999 ♦ Accurate Current Sense with Current-Sense Resistor (MAX1777/MAX1977) ♦ 1.5% Output Voltage Accuracy
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MAX1999)
MAX1777/MAX1977)
100mA
100ns
25kHz
MAX1777EEI
200kHz/300kHin
MAX1777/MAX1977/MAX1999
24v 5a smps
24V 10A SMPS
SMPS 24V
MAX1999
ultrasonic pulse generator kit
SMPS CIRCUIT DIAGRAM 5V 20A
12v 5a smps
24v smps
computer smps circuit
MAX1777
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5v4 g
Abstract: No abstract text available
Text: www.eLED.com T-1 3/4 5mm RESISTOR LED Package Dimensions LAMPS E53GD5V GREEN E53ID5V HIGH EFFICIENCY RED E53SGD5V SUPER BRIGHT GREEN E53SRD5V SUPER BRIGHT RED E53YD5V YELLOW Features 1.5 VOLT SERIES IN T-1 3/4 PACKAGES. 2.INTEGRAL CURRENT LIMITING RESISTOR.
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E53GD5V
E53ID5V
E53SGD5V
E53SRD5V
E53YD5V
EA0193
SEP/02/2001
E53-5V-2/4
5v4 g
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Untitled
Abstract: No abstract text available
Text: Mounting Clip FEATURES • Prevents severe vibration or mechanical shock to resistor • Increases resistor wattage up to 100% when mounted on metal surface 1.5 sq. in. by 0.040 in. thick min. per watt dissipated • Holes in clip base permit fastening to chassis
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30ppm/
100ppm/
200ppm/
3CJ10K
MIL-R-26
1-866-9-OHMITE
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830CE
Abstract: UN1121 UN1122 UN1123 UN1124 UN112X UN112Y
Text: Transistors with built-in Resistor UN1121/1122/1123/1124/112X/112Y Silicon PNP epitaxial planer transistor For digital circuits Unit: mm • Features 2.5±0.1 1.5 1.0 1.0 0.4 1.5 R0.9 ● ● ● ● ● UN1121 UN1122 UN1123 UN1124 UN112X UN112Y R1 2.2kΩ
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UN1121/1122/1123/1124/112X/112Y
UN1121
UN1122
UN1123
UN1124
UN112X
UN112Y
830CE
UN1121
UN1122
UN1123
UN1124
UN112X
UN112Y
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Untitled
Abstract: No abstract text available
Text: Mounting Clip • Prevent severe vibration or mechanical shock to resistor • Increase resistor wattage up to 100% when mounted on metal surface 1.5 sq. in. by 0.040 in. thick min. per watt dissipated • Holes in clip base permit fastening to chassis surface with machine
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30ppm/
100ppm/
200ppm/
3CJ10K
MIL-R-26
1-866-9-OHMITE
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240-VA
Abstract: eddy probe driver circuit diagram
Text: ACS760ELF-20B 240 V*A Protection IC with Integrated Hot-Swap Gate Driver and Internal 1.5 mΩ Hall Effect Based Current Monitor Features and Benefits Description ▪ Fully integrated analog current sensing without the need for a sense resistor ▪ 1.5 mΩ internal conductor resistance
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ACS760ELF-20B
ACS760
240-VA
eddy probe driver circuit diagram
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UNR1121
Abstract: UNR1122 UNR1123 UNR1124 UNR112X UNR112Y
Text: Transistors with built-in Resistor UNR1121/1122/1123/1124/112X/112Y UN1121/1122/1123/1124/112X/112Y Silicon PNP epitaxial planer transistor Unit: mm For digital circuits 6.9±0.1 2.5±0.1 1.5 1.0 1.0 0.4 1.5 R0.9 R0.9 ● ● ● ● ● ● UNR1121 UNR1122
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UNR1121/1122/1123/1124/112X/112Y
UN1121/1122/1123/1124/112X/112Y)
UNR1121
UNR1122
UNR1123
UNR1124
UNR112X
UNR112Y
UNR1121
UNR1122
UNR1123
UNR1124
UNR112X
UNR112Y
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Untitled
Abstract: No abstract text available
Text: • Prevent severe vibration or mechanical shock to resistor • Increase resistor wattage up to 100% when mounted on metal surface 1.5 sq. in. by 0.040 in. thick min. per watt dissipated • Holes in clip base permit fastening to chassis surface with machine screws, eyelets or rivets
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3CJ10K
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Chip Resistor r025
Abstract: No abstract text available
Text: NT IA PL M CO S Features Applications • Special alloy resistor ■ Power supplies ■ Power rating at 70 °C: CRA2010 - 1.5 W, ■ Stepper motor drives *R oH CRA2512 - 3 W ■ Inductance less than 5 nH ■ RoHS compliant* CRA2010/CRA2512 - High Power Current Sense Chip Resistor
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CRA2010
CRA2512
CRA2010/CRA2512
Chip Resistor r025
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lcd projector
Abstract: HFR065A HFR880
Text: Focus Resistor / High Voltage Block Specifications Model Application No Hv kV Power(W) HFR880 Capacitor & Bleeder Block 32.0 1.5 HFR065A FR(6 shafts) for Projection 13.0 2.2 HSB134 HV Splitter for Projection 32.0 3.4 HSB170 HV Splitter for Projection 32.0
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HFR880
HFR065A
HSB134
HSB170
HSB125
HSB140
HSB500
HSB300
lcd projector
HFR065A
HFR880
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ltc6990
Abstract: ultrasonic piezo generator 40khz ultrasonic generator 1200 w 40khz PKM29-3A0 LTC6990MPS6 NTHS120601N2202J Linear Technology Timerblox
Text: LTC6990 TimerBlox: Voltage Controlled Silicon Oscillator Features Description Fixed-Frequency or Voltage-Controlled Operation – Fixed: Single Resistor Programs Frequency with <1.5% Max Error – VCO: Two Resistors Set VCO Center Frequency and Tuning Range
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LTC6990
488Hz
100kHz
300kHz
OT-23
400kHz
32kHz
34sec,
LTC6906/LTC6907
ultrasonic piezo generator 40khz
ultrasonic generator 1200 w 40khz
PKM29-3A0
LTC6990MPS6
NTHS120601N2202J
Linear Technology Timerblox
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Isotek
Abstract: A-HI-R001-F1-K2-0
Text: A-H, A-N ISOTEK C O R P O R AT I O N Precision Current Sensing Resistors 1.5 x 45° 46.0 3.0 V I 1.5 6.5 V 10.0 17.0 I 5.0 The A series utilizes etched manganin foil as the resistor element for precision and long term stability. The A-H models are constructed for
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Untitled
Abstract: No abstract text available
Text: SP6669 600 mA 1.5 MHz PWM Synchronous Step Down Converter Design Tips Output Voltage Selection The output voltage is adjustable via the external resistor network R1 and R2 as per the following formula: Evaluation Board Configuration Input Voltage Output Voltage
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SP6669
XRP6668.
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1NBA
Abstract: resistor PT-200
Text: DATA SHEET NEC SILICON TRANSISTOR ELECTRON DEVICE FA1A4Z MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR M INI MOLD FEATURES PACKAGE DIMENSIONS • in millimeters Resistor Built-in T Y P E o—V W 2.8 + 0.2 1.5 R i = 1 0 k i2 Rl 0.65i8;is •
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1987M
1NBA
resistor PT-200
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H100I
Abstract: marking IAY
Text: DATA SHEET NEC SILICON TRANSISTOR ELECTRON DEVICE FN1F4Z MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR MINI MOLD FEATURES PACKAGE DIMENSIONS • in millimeters Resistor Built-in TYPE o—W V 2.8 ± 0.2 Rl = 22 k£2 R1 0.65: g;|5 1.5 • Complementary to FA1 F4Z
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1987M
H100I
marking IAY
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L5 marking
Abstract: No abstract text available
Text: DATA SHEET SILICON TRANSISTOR HfCTBOM DEVICE FN1L3Z MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR M INI MOLD FEATURES PACKAGE DIMENSIONS • in m illim eters Resistor Built-in T Y P E 2.8 ± 0.2 O—W V 3 R i = 4 . 7 k£2 R1 0.65i8:l5 1.5 •
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1987M
L5 marking
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L66 marking
Abstract: IR 2137 IC TC-2137 marking L64
Text: DATA SHEET NEC SILICON TRANSISTOR ELECTRON DEVICE FAI F4Z M ED IU M SPEED SW ITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR M IN I MOLD FEATURES PACKAGE DIMENSIONS • in m illim eters Resistor Built-in TYPE 2 .8 ± 0.2 B 1.5 O—W V Ri = 22 k£2 Ri 3 - OE
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10-IR
1987M
L66 marking
IR 2137 IC
TC-2137
marking L64
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L4Z marking
Abstract: No abstract text available
Text: DATA SHEET SILICON TRANSISTOR ' FA1L4Z ‘Æ à i f ' MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR MINI MOLD FEATURES PACKAGE D IM E N SIO N S • in millimeters Resistor Built-in TYPE 2.8+0.2 o—V A — 1.5 Rl • Ri = 4 7 k fì Complementary to F N 1L4Z
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TC-2117
1987M
L4Z marking
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pulse load resistor wirewound resistors
Abstract: 0R330 49R90 philips resistor 2306
Text: Product Specification Philips Com ponents Cemented Wirewound Resistor 1 Watt 5% FEATURES AC01 2306 328. QUICK REFERENCE DATA High Power Dissipation in a Small Volume Resistance Range 0.1 i i to 1.5 K fì; E24 Series High Pulse Load Handling Capabilities
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