RT5N141C
Abstract: RT5N141
Text: RT5N141C Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type DESCRIPTION OUTLINE DRAWING Unit: mm RT5N141C is a one chip transistor with built-in bias 2.5 resistor. 0.5 1.5 0.5 ① ② 0.4 0.95 2.9 1.90 Built-in bias resistor （R1=10kΩ, R2=10kΩ）
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RT5N141C
RT5N141C
SC-59
RT5N141
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RT5N234C
Abstract: No abstract text available
Text: RT5N234C Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type DESCRIPTION OUTLINE DRAWING Unit: mm RT5N234C is a one chip transistor with built-in bias 2.5 resistor. 0.5 1.5 0.5 ① ② 0.4 0.95 2.9 1.90 Built-in bias resistor （R1=2.2kΩ, R2=10kΩ）
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RT5N234C
RT5N234C
SC-59
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E50M
Abstract: RT5N431C RT5N431
Text: RT5N431C Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type DESCRIPTION OUTLINE DRAWING Unit: mm RT5N431C is a one chip transistor with built-in bias 2.5 resistor. 0.5 1.5 0.5 ① ② 0.4 0.95 2.9 1.90 Built-in bias resistor （R1=4.7kΩ, R2=4.7kΩ）
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RT5N431C
RT5N431C
SC-59
E50M
RT5N431
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RT5N431C
Abstract: RT5N431
Text: RT5N431C Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type DESCRIPTION OUTLINE DRAWING RT5N431C is a one chip transistor with built-in bias Unit: mm 2.5 resistor. 0.5 1.5 0.5 ① ② 0.4 0.95 2.9 1.90 Built-in bias resistor （R1=4.7kΩ, R2=4.7kΩ）
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RT5N431C
RT5N431C
JEITASC-59
RT5N431
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RT5P141C
Abstract: No abstract text available
Text: RT5P141C Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type DESCRIPTION OUTLINE DRAWING Unit: mm RT5P141C is a one chip transistor with built-in bias 2.5 resistor. 0.5 1.5 0.5 ① ② 0.4 0.95 2.9 1.90 Built-in bias resistor （R1=10kΩ, R2=10kΩ）
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RT5P141C
RT5P141C
JEITASC-59
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RT5N141C
Abstract: No abstract text available
Text: RT5N141C Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type DESCRIPTION OUTLINE DRAWING RT5N141C is a one chip transistor with built-in bias Unit: mm 2.5 resistor. 0.5 1.5 0.5 ① ② 0.4 0.95 2.9 1.90 Built-in bias resistor （R1=10kΩ, R2=10kΩ）
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RT5N141C
RT5N141C
JEITASC-59
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Untitled
Abstract: No abstract text available
Text: www.eLED.com T-1 3mm RESISTOR LED LAMPS Package Dimensions E934GD5V GREEN E934ID5V HIGH EFFICIENCY RED E934SGD5V SUPER BRIGHT GREEN E934SRD5V SUPER BRIGHT RED E934YD5V YELLOW Features 1.5 VOLT SERIES IN T-1 PACKAGES. 2.INTEGRAL CURRENT LIMITING RESISTOR.
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E934GD5V
E934ID5V
E934SGD5V
E934SRD5V
E934YD5V
device85
EA0204
SEP/03/2001
E934-5V-2/4
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RT5P430C
Abstract: rt5p430
Text: PRELIMINARY RT5P430C Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type OUTLINE DRAWING DESCRIPTION Unit: mm RT5P430C is a one chip transistor with built-in bias 2.5 resistor, NPN type is RT5N430C. 0.5 1.5 0.5 2.9 1.90 0.95 0.95
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RT5P430C
RT5P430C
RT5N430C.
SC-59
rt5p430
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RT5P230C
Abstract: RT5N230C
Text: PRELIMINARY RT5P230C Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type OUTLINE DRAWING DESCRIPTION Unit: mm RT5P230C is a one chip transistor with built-in bias 2.5 resistor, NPN type is RT5N230C. 0.5 1.5 0.5 ① ② 0.4 0.95 2.9
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RT5P230C
RT5P230C
RT5N230C.
JEITASC-59
RT5N230C
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24v 5a smps
Abstract: 24V 10A SMPS SMPS 24V MAX1999 ultrasonic pulse generator kit SMPS CIRCUIT DIAGRAM 5V 20A 12v 5a smps 24v smps computer smps circuit MAX1777
Text: 19-2187; Rev 0; 4/02 High-Efficiency, Quad Output, Main PowerSupply Controllers for Notebook Computers Applications Features ♦ No Current-Sense Resistor Needed MAX1999 ♦ Accurate Current Sense with Current-Sense Resistor (MAX1777/MAX1977) ♦ 1.5% Output Voltage Accuracy
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MAX1999)
MAX1777/MAX1977)
100mA
100ns
25kHz
MAX1777EEI
200kHz/300kHin
MAX1777/MAX1977/MAX1999
24v 5a smps
24V 10A SMPS
SMPS 24V
MAX1999
ultrasonic pulse generator kit
SMPS CIRCUIT DIAGRAM 5V 20A
12v 5a smps
24v smps
computer smps circuit
MAX1777
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5v4 g
Abstract: No abstract text available
Text: www.eLED.com T-1 3/4 5mm RESISTOR LED Package Dimensions LAMPS E53GD5V GREEN E53ID5V HIGH EFFICIENCY RED E53SGD5V SUPER BRIGHT GREEN E53SRD5V SUPER BRIGHT RED E53YD5V YELLOW Features 1.5 VOLT SERIES IN T-1 3/4 PACKAGES. 2.INTEGRAL CURRENT LIMITING RESISTOR.
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E53GD5V
E53ID5V
E53SGD5V
E53SRD5V
E53YD5V
EA0193
SEP/02/2001
E53-5V-2/4
5v4 g
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Ceramic Resistor 5W axial wirewound
Abstract: Resistor 5W axial wirewound wirewound resistor 5W resistor 120 ohms j 15k 2watt resistor Ceramic Resistor 1W axial wirewound 10R0 1R00 R250 1 watt axial resistor
Text: Commercial Grade Power Axial Wirewound Resistor CCW Series • • • • • Power ratings from 1/2W to 9W Non-inductive windings available Ceramic core wirewound resistor Resistance range from 0.1Ω to 1.5Ω Welded construction, conformal coating Electrical Data
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Untitled
Abstract: No abstract text available
Text: Mounting Clip FEATURES • Prevents severe vibration or mechanical shock to resistor • Increases resistor wattage up to 100% when mounted on metal surface 1.5 sq. in. by 0.040 in. thick min. per watt dissipated • Holes in clip base permit fastening to chassis
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30ppm/
100ppm/
200ppm/
3CJ10K
MIL-R-26
1-866-9-OHMITE
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RT1N140C
Abstract: RT1N140M RT1N140S RT1N140T RT1N140U RT1N140X RT1P140X
Text: ＲＴ１Ｎ１４０Ｘ SERIES 〈Transistor〉 Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type DESCRIPTION OUTLINE RT1N140U RT1N140C 2.5 1.6 0.5 0.95 0.3 0.5 ② 1.6 1.0 ・Built-in bias resistor R1=10kΩ 0.5 FEATURE ① 1.5
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RT1N140U
RT1N140C
RT1N140X
RT1P140X.
JEITASC-59
O-236
RT1N140C
RT1N140M
RT1N140S
RT1N140T
RT1N140U
RT1P140X
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830CE
Abstract: UN1121 UN1122 UN1123 UN1124 UN112X UN112Y
Text: Transistors with built-in Resistor UN1121/1122/1123/1124/112X/112Y Silicon PNP epitaxial planer transistor For digital circuits Unit: mm • Features 2.5±0.1 1.5 1.0 1.0 0.4 1.5 R0.9 ● ● ● ● ● UN1121 UN1122 UN1123 UN1124 UN112X UN112Y R1 2.2kΩ
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UN1121/1122/1123/1124/112X/112Y
UN1121
UN1122
UN1123
UN1124
UN112X
UN112Y
830CE
UN1121
UN1122
UN1123
UN1124
UN112X
UN112Y
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Untitled
Abstract: No abstract text available
Text: Mounting Clip • Prevent severe vibration or mechanical shock to resistor • Increase resistor wattage up to 100% when mounted on metal surface 1.5 sq. in. by 0.040 in. thick min. per watt dissipated • Holes in clip base permit fastening to chassis surface with machine
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30ppm/
100ppm/
200ppm/
3CJ10K
MIL-R-26
1-866-9-OHMITE
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PDF
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l38 transistor
Abstract: ss1250 marking L36 005-4424
Text: DATA SHEET SILICON TRANSISTOR ELECTRON OUNCE / £ ^ _ _ FAI L3Z MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR MINI MOLD FEATURES PACKAGE DIMENSIONS • in millimeters Resistor Built-in TYPE B 2.8 +0.2 O—M A r R! = 4.7 k ft R1 1.5 • Complementary to FN 1L3Z
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OCR Scan
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TC-2116
1987M
l38 transistor
ss1250
marking L36
005-4424
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1NBA
Abstract: resistor PT-200
Text: DATA SHEET NEC SILICON TRANSISTOR ELECTRON DEVICE FA1A4Z MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR M INI MOLD FEATURES PACKAGE DIMENSIONS • in millimeters Resistor Built-in T Y P E o—V W 2.8 + 0.2 1.5 R i = 1 0 k i2 Rl 0.65i8;is •
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OCR Scan
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1987M
1NBA
resistor PT-200
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H100I
Abstract: marking IAY
Text: DATA SHEET NEC SILICON TRANSISTOR ELECTRON DEVICE FN1F4Z MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR MINI MOLD FEATURES PACKAGE DIMENSIONS • in millimeters Resistor Built-in TYPE o—W V 2.8 ± 0.2 Rl = 22 k£2 R1 0.65: g;|5 1.5 • Complementary to FA1 F4Z
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OCR Scan
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1987M
H100I
marking IAY
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PDF
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L4Z marking
Abstract: marking M61 marking M63
Text: DATA SHEET NEC SILICON TRANSISTOR ELECTRON DEVICE FN1L4Z MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR MINI MOLD FEATURES PACKAGE DIMENSIONS • in millimeters Resistor Built-in T Y P E B O—v w 2.8 ± 0.2 0.65ig;i5 1.5 • 3 R i = 4 7 k i2
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OCR Scan
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1987M
L4Z marking
marking M61
marking M63
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PDF
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Untitled
Abstract: No abstract text available
Text: DATA SHEET SEC SILICON TRANSISTOR ELECTRON DEVICE FN 1A 4Z MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR MINI MOLD FEATURES PACKAGE DIMENSIONS • in millimeters Resistor Built-in T Y P E 2.8 + 0.2 R t = 1 0 kn o— A /V V Ri 0.65 I g ls 1.5
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OCR Scan
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1987M
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PDF
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L5 marking
Abstract: No abstract text available
Text: DATA SHEET SILICON TRANSISTOR HfCTBOM DEVICE FN1L3Z MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR M INI MOLD FEATURES PACKAGE DIMENSIONS • in m illim eters Resistor Built-in T Y P E 2.8 ± 0.2 O—W V 3 R i = 4 . 7 k£2 R1 0.65i8:l5 1.5 •
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OCR Scan
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1987M
L5 marking
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PDF
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L66 marking
Abstract: IR 2137 IC TC-2137 marking L64
Text: DATA SHEET NEC SILICON TRANSISTOR ELECTRON DEVICE FAI F4Z M ED IU M SPEED SW ITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR M IN I MOLD FEATURES PACKAGE DIMENSIONS • in m illim eters Resistor Built-in TYPE 2 .8 ± 0.2 B 1.5 O—W V Ri = 22 k£2 Ri 3 - OE
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OCR Scan
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10-IR
1987M
L66 marking
IR 2137 IC
TC-2137
marking L64
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PDF
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L4Z marking
Abstract: No abstract text available
Text: DATA SHEET SILICON TRANSISTOR ' FA1L4Z ‘Æ à i f ' MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR MINI MOLD FEATURES PACKAGE D IM E N SIO N S • in millimeters Resistor Built-in TYPE 2.8+0.2 o—V A — 1.5 Rl • Ri = 4 7 k fì Complementary to F N 1L4Z
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OCR Scan
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TC-2117
1987M
L4Z marking
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PDF
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