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    BUK445

    Abstract: BUK445-60A BUK445-60B
    Text: PHILIPS INTERNATIONAL bSE ]> B 7H0fl2b 0Db3Tflb TOT • P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in


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    PDF 711002b BUK445-60A/B -SOT186 DS/V-12/ ID/100 BUK445 BUK445-60A BUK445-60B

    BUK417-500AE

    Abstract: No abstract text available
    Text: Product Specification Philips Semiconductors BUK417-500AE/BE PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in ISOTOP envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,


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    PDF BUK417-500AE/BE BUK417 -500AE -500BE OT227B BUK417-500AE