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    RELIABILITY TEST METHODS FOR PACKAGED DEVICES Search Results

    RELIABILITY TEST METHODS FOR PACKAGED DEVICES Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPH9R00CQH Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH2R408QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance Visit Toshiba Electronic Devices & Storage Corporation
    XPH2R106NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 110 A, 0.0021 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    XPH3R206NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 70 A, 0.0032 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    TPH4R008QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 86 A, 0.004 Ohm@10V, SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation

    RELIABILITY TEST METHODS FOR PACKAGED DEVICES Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: PR33MA11NTZF PR33MA11NTZF IT rms ≤0.3A, Non-Zero Cross type DIP 6pin SSD •Description ■Agency approvals/Compliance PR33MA11NTZF Solid State Device (SSD) are an integration of an infrared emitting diode (IRED), a Phototriac Detector. These devices are ideally suited for controlling high


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    PR33MA11NTZF PR33MA11NTZF OP13017EN PDF

    reliability data analysis

    Abstract: No abstract text available
    Text: 1 GENERAL INFORMATION Reliability INTRODUCTION Vantis’ and AMD’s Qualification Maintenance Program QMP is used to measure the reliability of all process technologies on a regular basis. This is an extensive effort that is aimed at providing generic fab process coverage for all fab process technologies. Typically about 30,000 devices per


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    MIL-STD-883 Method 2010

    Abstract: No abstract text available
    Text: DICE PRODUCTS INTRODUCTION Linear Technology Corporation LTC offers a wide variety of precision linear ICs in die form. It is our intent to offer dice electrically tested to levels which can be expected to yield the best possible performance in hybrid circuits.


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    MIL-STD-883 Method 2010

    Abstract: No abstract text available
    Text: DICE PRODUCTS INTRODUCTION Linear Technology Corporation LTC offers a wide variety of precision linear ICs in die form. It is our intent to offer dice electrically tested to levels which can be expected to yield the best possible performance in hybrid circuits.


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    MIL-STD-883 Method 2010

    Abstract: No abstract text available
    Text: DICE PRODUCTS INTRODUCTION Linear Technology Corporation LTC offers a wide variety of precision linear ICs in die form. It is our intent to offer dice electrically tested to levels which can be expected to yield the best possible performance in hybrid circuits.


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    Untitled

    Abstract: No abstract text available
    Text: Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK Standard & Custom Products, DC to 110 GHz! Analog, Digital & Mixed-Signal ICs, Modules, Subsystems & Instrumentation


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    AS9100 MIL-PRF-38534-K MIL-PRF-38535-S PDF

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    Abstract: No abstract text available
    Text: Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK Space Qualified Processes, People & Facilities! Analog, Digital & Mixed-Signal ICs, Modules, Subsystems & Instrumentation


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    AS9100 PDF

    Moisture Sensitivity Level Rating

    Abstract: JESD22-A113 moisture sensitive handling and packaging moisture sensitivity s2083 JEDEC J-STD-033 moisture handling and packaging S2080 J-STD-033
    Text: Moisture Effects on the Soldering of Plastic Encapsulated Devices S2080 V4 Introduction Improper packaging, storage, and handling of plastic encapsulated devices PED’s can trap moisture within the devices and lead to damage during reflow soldering to printed circuit boards. As part of reliability qualification


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    S2080 Moisture Sensitivity Level Rating JESD22-A113 moisture sensitive handling and packaging moisture sensitivity s2083 JEDEC J-STD-033 moisture handling and packaging S2080 J-STD-033 PDF

    S2083

    Abstract: JESD22-A113 J-STD-033 S2080
    Text: Application Note S2080 Moisture Effects on the Soldering of Plastic Encapsulated Devices Introduction Improper packaging, storage, and handling of plastic encapsulated devices PED’s can trap moisture within the devices and lead to damage during reflow soldering


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    S2080 S2083 JESD22-A113 J-STD-033 S2080 PDF

    JEP140

    Abstract: AN-400 JESD22-A102 JESD22-A103 JESD22-A108 JESD22-A110 JESD22-A113 JESD22-B100 JESD22-B102 JESD22-B105
    Text: AN-400 April 2008 Surface Mount Plastic Packages for High Reliability Applications Applications Note Introduction Holt Integrated Circuits specializes in the design and manufacture of components for military and aerospace applications. Traditionally the aerospace industry has specified the


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    AN-400 JEP140 AN-400 JESD22-A102 JESD22-A103 JESD22-A108 JESD22-A110 JESD22-A113 JESD22-B100 JESD22-B102 JESD22-B105 PDF

    x band diode detector waveguide

    Abstract: CME7660-000 DIODE RL 207 8E08 detector doppler ka CDB7619-000 CDC7630-000 RF 207 Silicon Detector Diodes Alpha Industries
    Text: Silicon Schottky Barrier Detector Diodes Features 3 Both P–Type and N–Type Low Barrier Silicon Available Low 1/f Noise Bonded Junctions for Reliability Planar Passivated Beam–Lead and Chip Construction See Also Zero Bias Silicon Schottky Barrier Detector Diodes


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    Untitled

    Abstract: No abstract text available
    Text: Packaged PIN Diodes RoHS Compliant Rev V.7 Maximum Power Dissipation Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ High Power Fast Speed Voltage Ratings to 1500 Volts Wide Selection of Carrier Lifetimes Wide Selection of Capacitances Assortment of Packages Styles Available Screened for Military Applications


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    250mW PDF

    MA4P504

    Abstract: No abstract text available
    Text: Packaged PIN Diodes RoHS Compliant Rev V.6 Maximum Power Dissipation Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ High Power Fast Speed Voltage Ratings to 1500 Volts Wide Selection of Carrier Lifetimes Wide Selection of Capacitances Assortment of Packages Styles Available Screened for Military Applications


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    250mW MA4P504 PDF

    AH202

    Abstract: thermal impedance QFN PACKAGE Junction to PCB thermal resistance die paddle
    Text: Mounting Considerations for Medium Power Surface Mount RF Devices Abstract: Traditionally, devices in the RF transmit chain dissipating more than 2 Watts of DC power have been packaged in hermetically sealed, flange mount packages. This technique provides a high level of thermal reliability, but requires extra board space and


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    AH202 thermal impedance QFN PACKAGE Junction to PCB thermal resistance die paddle PDF

    s- band Waveguide limiter

    Abstract: AEROFLEX Attenuators microwave transceiver MIL-STD-1553 cable connector Aeroflex KDI Resistor SURFACE MOUNT DIODES MIL GRADE GaAs tunnel diode GSM BTS antenna Ferrite Circulators at 15 ghz tunnel diode GaAs
    Text: RF & Microwave Devices Components RF Modules & Subsystems Capabilities Brochure Microelectronic Solutions – RFMW 2006 R F & M O D U L E S S U B S Y S T E M S C O M P O N E N T S D E V I C E S P E R F O R M A N C E Aeroflex is a world leader in the design, manufacture


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    S2080

    Abstract: No abstract text available
    Text: Application Note S2080 Moisture Effects on the Soldering of Plastic Encapsulated Devices Introduction Improper packaging, storage, and handling of plastic encapsulated devices PED’s can trap moisture within the devices and lead to damage during reflow soldering


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    S2080 S2080 PDF

    Untitled

    Abstract: No abstract text available
    Text: Known Good Die: The Challenge of the Technology M ark Lippold and Sherburne Bridges National Semiconductor, Inc. South Portland, M aine Abstract The challenges of supplying high yield, high quality, cost effective Known Good Die KGD are discussed in detail. A review of the history behind die supply processing and technology drivers provide insight into the


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    Untitled

    Abstract: No abstract text available
    Text: SHARP OPTO-ELECTRONIC DEVICES DIVISION ELECTRO N IC COM PONENTS GROUP SHARP CORPORATION SPECIFICATION D EV ICE SPECIFICATION FO R PHOTOCOUPLER M O D EL No. PC815 Business dealing name PC815XJ0000F PC815XYJ000F Specified for Enclosed please find copies o f the Specifications which consists o f 14 pages including cover.


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    PC815 PC815XJ0000F PC815XYJ000F 171mm PC815XYJOOOF) PDF

    schematic WELDER

    Abstract: gold melting furnace ultrasonic bond
    Text: Bonding and Handling Procedures for Chip Devices DISCUSSION Chip diode devices for use in integrated circuit and hybrid integrated circuits have proliferated in the last few years. Today's circuit designer is faced with a multiplicity of alter­ natives in the selection of diodes and packaging with each


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    OT-23 schematic WELDER gold melting furnace ultrasonic bond PDF

    PC123Y82FZ0F

    Abstract: PC123Y92FZ0F PC123Y12FZ0F PC123Y22FZ0F pc123y22 PC123Y82 PC123Y52FZ0F pc123y52 PC123 VDE PC123 pin out
    Text: I S H A R P I' jfU. SPEC. No. ED-04P126A p. ’:U ; .‘ '>>' J'V/ ^ " fP JSSUE -November24,200| OPTO-ELECTRONTC DEVICES DIVISION ELECTR O N IC CO M PO N EN TS GROUP SH A RP CORPORATION SPECIFICATION DEV ICE SPECIFICATION FO R PHOTOCOUPLER M O D EL No. PC123


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    PC123Y12FZ0F PC123Y22FZ0F PC123Y52FZ0F PC123Y82FZ0F PC123Y92FZ0F PC123Y82FZ0F PC123Y92FZ0F PC123Y12FZ0F PC123Y22FZ0F pc123y22 PC123Y82 PC123Y52FZ0F pc123y52 PC123 VDE PC123 pin out PDF

    CDB7619-000

    Abstract: CDE7618-000 Silicon Detector Diodes
    Text: EBA lpha Silicon Schottky Barrier Detector Diodes Features Both P-Type and N-Type Low Barrier Silicon Available Low 1/f Noise Bonded Junctions for Reliability Planar Passivated Beam-Lead and Chip Construction See Also Zero Bias Silicon Schottky Barrier Detector Diodes


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    ultrasonic bond

    Abstract: schematic WELDER Gunn Diode schematic WELDER capacitor M541 varactor beam lead thermal conductive teflon mesa similar
    Text: Application Note M an A M P com pany Bonding and Handling Procedures for Chip Diode Devices M541 V 2.00 Discussion Microstrip Packages and Chip Carriers Chip diode devices for use in integrated circuit and hybrid integrated circuits have proliferated in the last


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    ip olivetti cd

    Abstract: GL100MD1MP1 GL100MD1
    Text: SPEC. No. ED-02157 ISSUE June 21,2002 SH A R P OPTO-ELECTRONIC DEVICES DIVISION ELECTRONIC COMPONENTS GROUP SHARP CORPORATION SPECIFICATION i " DEVICE SPECIFICATION FOR INFRARED EMITTING DIODE MODEL No. Specified for GL100MD1MP1 Olivetti Enclosed please find copies o f the Specifications which consists o f 14 pages including cover.


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    ED-02157 GL100MD1MP1 ip olivetti cd GL100MD1 PDF

    rover

    Abstract: J1000
    Text: SPEb^fo. / ED-Q2Û78 , x . ISSUE Maiçh;i8,20Q2 SHARP OPTOELECTRONIC DEVICES DIVISION ELECTRONIC COMPONENTS GROUP SHARP CORPORATION SPECIFICATION DEVICE SPECIFICATION FOR INFRARED EMITTING DIODE MODEL No. G L 100M N 0M P1M Specified for Enclosed please find copies of the Specifications which consists of 14 pages including cover.


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    ED-Q2078 GL100MN0MP1M GL100MN0MP1M rover J1000 PDF