d313 TRANSISTOR equivalent
Abstract: 207a smd ic smd diode 106E mil-std-202F 101D 6822 TRANSISTOR equivalent transistor d323 MIL-STD-202F-201A transistor D313 smd diode 101a D313 VOLTAGE REGULATOR
Text: RELIABILITY TESTING OF SEMICONDUCTOR DEVICES V. RELIABILITY TESTING OF SEMICONDUCTOR DEVICES 1. WHAT IS RELIABILITY TESTING? 2. RELIABILITY TEST METHODS 3. ACCELERATED LIFE TEST 4. ANALYSIS OF TEST RESULTS 4.1 HOW TO USE WEIBULL PROBABILITY PAPER 3. 4.1.1 APPLICATION OF WEIBULL PROBABILITY PAPER
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R69-20
d313 TRANSISTOR equivalent
207a smd ic
smd diode 106E
mil-std-202F 101D
6822 TRANSISTOR equivalent
transistor d323
MIL-STD-202F-201A
transistor D313
smd diode 101a
D313 VOLTAGE REGULATOR
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13001 s
Abstract: 13001 datasheet 13001 JL-01 ACTEL 1020B RTSX32 B 13001 RTSX16 42MX09 1280A
Text: Actel 4th Quarter 2000 Reliability Report 1 Table of Contents Page Reliability Test Matrix • Test Methods and Conditions Failure Rates • Failure Rates FITs Based For Current Process Data • Mean Time Between Failure (MTBF) For Current Process Data 2
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1225XL,
1240XL,
1280XL,
A1415,
A1425,
14100BP,
32140DX,
32200DX
13001 s
13001 datasheet
13001
JL-01
ACTEL 1020B
RTSX32
B 13001
RTSX16
42MX09
1280A
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Untitled
Abstract: No abstract text available
Text: Test and Reliability Data Environmental Data MECHANICAL Test Number Test Methods Requirement 1 Solderability After steam aging, immerse in the solder H63A of 230 ±5° for 3 ±0.5 seconds. Approximately 95% of the terminal should be covered with new solder.
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1500g
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Untitled
Abstract: No abstract text available
Text: ZENAMIC Series D Reliability Characteristics Test Methods/Descriptions Specifications Standard Test Condition Unless other wise specified, electrical measurements initial/aftertests shall be conducted at temperature of 5 to 35ЊC,relative humidity of 45 to 85%
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for1000
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VQ1000N7
Abstract: VN0109N9 VC0106N7 MIL-STD-750 TN0606N7 TP0610N2 Diode SJ TQ3001N7 Transistor SJ VP0109N2
Text: DMOS High Reliability Products The following products are available with High Reliability processing per test methods and flows of MIL-STD-750 and MIL-STD-883. For ordering purposes, add the process flow prefix to the device number as shown in the following examples:
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MIL-STD-750
MIL-STD-883.
VN0109N9
VC0106N7
2N6660
TN0104N2
TP0104N2
TP0610N2
VN0104N9
VQ1000N7
VN0109N9
VC0106N7
TN0606N7
TP0610N2
Diode SJ
TQ3001N7
Transistor SJ
VP0109N2
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triac zd 107
Abstract: triac bcr BS08A BS08A TRANSISTOR equivalent SCR induction furnace circuit diagram 1000w inverter design and calculation TRIAC BCR 50 AM BCR 3A 400V CR3JM equivalent TRIACS EQUIVALENT LIST
Text: Low Power Applications and Technical Data Book A Guide to Using the Data Book 1.0 Numbering System 2.0 Symbols and Definitions of Major Parameters 3.0 Powerex Quality Assurance Program 4.0 Semiconductor Device Reliability 5.0 Reliability Test Methods 6.0 Designing Trigger Circuits
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BCR10CM-8L
Loa25
O-202B1
O-220
BS08A
triac zd 107
triac bcr
BS08A
BS08A TRANSISTOR equivalent
SCR induction furnace circuit diagram
1000w inverter design and calculation
TRIAC BCR 50 AM
BCR 3A 400V
CR3JM equivalent
TRIACS EQUIVALENT LIST
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AEC-Q101-001
Abstract: AEC-Q101-REV-C jesd22-a105-c JESD22-A105C AEC-Q101-002 C2D20120D SiC BJT AECQ101-001 JESD47B JESD22-A104-B
Text: 1200-V ZERO RECOVERY Rectifiers Qualification Report Summary : March 2008 cation Report 1200-V Qualifi This report documents the qualification and reliability test results for the Cree 1200-V Schottky diode product families. This report also describes the test methods and criteria used the testing process.
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200-V
100-mm
O-220
O-247
AEC-Q101-001
AEC-Q101-REV-C
jesd22-a105-c
JESD22-A105C
AEC-Q101-002
C2D20120D
SiC BJT
AECQ101-001
JESD47B
JESD22-A104-B
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7D680
Abstract: 5d471 5D680 ZENAMIC VARISTOR 20S100
Text: ZENAMIC Reliability Characteristics Test Methods/Descriptions Criterion Standard Test Condition Unless other wise specified, electrical measurements initial/aftertests shall be conducted at temperature of 5 to 35ЊC,relative humidity of 45 to 85% and atmospheric pressure of 860 to 1060 hPa.
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8/20s)
for1000
7D680
5d471
5D680
ZENAMIC VARISTOR
20S100
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CVR-42
Abstract: CVR-32
Text: Thick Film Chip Trimmer Potentiometers CVR-32 / CVR-42 / CVR-43 Series Specifications and Methods of Reliability Test Item Specification Measuring Condition 1: Stabilize at 70±2°C for 8 hours. 2: Measure initial value. Load life ∆R < ±5% of Initial value
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CVR-32
CVR-42
CVR-43
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Untitled
Abstract: No abstract text available
Text: Silicon Technology Reliability Vishay Siliconix ACCELERATED OPERATING LIFE TEST RESULT Sample Size Equivalent Device Hours Failure Rate in FIT 800 120 964 520 7.523 Failure Rate in FIT is calculated according to JEDEC Standard JESD85, Methods for Calculating Failure Rates in Units of FITs,
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JESD85,
29-Jul-08
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Untitled
Abstract: No abstract text available
Text: Silicon Technology Reliability Vishay Siliconix ACCELERATED OPERATING LIFE TEST RESULT Sample Size Equivalent Device Hours Failure Rate in FIT 1046 145 847 171 6.239 Failure Rate in FIT is calculated according to JEDEC Standard JESD85, Methods for Calculating Failure Rates in Units of FITs,
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JESD85,
29-Jul-08
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Untitled
Abstract: No abstract text available
Text: Silicon Technology Reliability Vishay Siliconix ACCELERATED OPERATING LIFE TEST RESULT Sample Size Equivalent Device Hours Failure Rate in FIT 1312 232 056 420 3.921 Failure Rate in FIT is calculated according to JEDEC Standard JESD85, Methods for Calculating Failure Rates in Units of FITs,
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JESD85,
28-Jul-08
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Calculating
Abstract: JESD85
Text: Silicon Technology Reliability Vishay Siliconix ACCELERATED OPERATING LIFE TEST RESULT Sample Size Equivalent Device Hours Failure Rate in FIT 3306 434 113 675 2.096 Failure Rate in FIT is calculated according to JEDEC Standard JESD85, Methods for Calculating Failure Rates in Units of FITs,
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JESD85,
29-Jul-08
Calculating
JESD85
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JESD85
Abstract: No abstract text available
Text: Silicon Technology Reliability Vishay Siliconix ACCELERATED OPERATING LIFE TEST RESULT Sample Size Equivalent Device Hours Failure Rate in FIT 7196 710 778 409 1.280 Failure Rate in FIT is calculated according to JEDEC Standard JESD85, Methods for Calculating Failure Rates in Units of FITs,
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JESD85,
29-Jul-08
JESD85
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|
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JESD85
Abstract: No abstract text available
Text: Silicon Technology Reliability Vishay Siliconix ACCELERATED OPERATING LIFE TEST RESULT Sample Size Equivalent Device Hours Failure Rate in FIT 2050 294 090 851 3.094 Failure Rate in FIT is calculated according to JEDEC Standard JESD85, Methods for Calculating Failure Rates in Units of FITs,
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JESD85,
28-Jul-08
JESD85
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72558
Abstract: Calculating Activation Energy JESD85
Text: Silicon Technology Reliability Vishay Siliconix ACCELERATED OPERATING LIFE TEST RESULT Sample Size Equivalent Device Hours Failure Rate in FIT 984 71 251 004 12.772 Failure Rate in FIT is calculated according to JEDEC Standard JESD85, Methods for Calculating Failure Rates in Units of FITs,
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JESD85,
29-Jul-08
72558
Calculating
Activation Energy
JESD85
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JESD85
Abstract: No abstract text available
Text: Silicon Technology Reliability Vishay Siliconix ACCELERATED OPERATING LIFE TEST RESULT Sample Size Equivalent Device Hours Failure Rate in FIT 4083 355 397 483 2.561 Failure Rate in FIT is calculated according to JEDEC Standard JESD85, Methods for Calculating Failure Rates in Units of FITs,
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JESD85,
29-Jul-08
JESD85
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Silicon Technology Reliability
Abstract: 72476
Text: Silicon Technology Reliability Vishay Siliconix ACCELERATED OPERATING LIFE TEST RESULT Sample Size Equivalent Device Hours Failure Rate in FIT 2006 223 258 252 4.076 Failure Rate in FIT is calculated according to JEDEC Standard JESD85, Methods for Calculating Failure Rates in Units of FITs,
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JESD85,
29-Jul-08
Silicon Technology Reliability
72476
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72483
Abstract: No abstract text available
Text: Silicon Technology Reliability Vishay Siliconix ACCELERATED OPERATING LIFE TEST RESULT Sample Size Equivalent Device Hours Failure Rate in FIT 2296 248 147 113 3.667 Failure Rate in FIT is calculated according to JEDEC Standard JESD85, Methods for Calculating Failure Rates in Units of FITs,
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JESD85,
28-Jul-08
18-Jul-08
72483
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72560
Abstract: Silicon Technology Reliability
Text: Silicon Technology Reliability Vishay Siliconix ACCELERATED OPERATING LIFE TEST RESULT Sample Size Equivalent Device Hours Failure Rate in FIT 850 112 368 583 8.098 Failure Rate in FIT is calculated according to JEDEC Standard JESD85, Methods for Calculating Failure Rates in Units of FITs,
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JESD85,
29-Jul-08
72560
Silicon Technology Reliability
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Untitled
Abstract: No abstract text available
Text: Silicon Technology Reliability Vishay Siliconix ACCELERATED OPERATING LIFE TEST RESULT Sample Size Equivalent Device Hours Failure Rate in FIT 6986 2 655 142 834 1.958 Failure Rate in FIT is calculated according to JEDEC Standard JESD85, Methods for Calculating Failure Rates in Units of FITs,
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JESD85,
28-Jul-08
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JESD85
Abstract: No abstract text available
Text: Silicon Technology Reliability Vishay Siliconix ACCELERATED OPERATING LIFE TEST RESULT Sample Size Equivalent Device Hours Failure Rate in FIT 8072 847 453 815 1.074 Failure Rate in FIT is calculated according to JEDEC Standard JESD85, Methods for Calculating Failure Rates in Units of FITs,
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JESD85,
29-Jul-08
JESD85
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HPMX-3002
Abstract: M2003 M2015
Text: Silicon Bipolar RFIC 900 MHz Driver Amplifier Reliability Data HPMX-3002 Description The following cumulative test results have been obtained from testing performed at HewlettPackard in accordance with the relevant MIL-STD-883 or HP internal GSS methods. Data was
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HPMX-3002
MIL-STD-883
M1010
M1011
M2015
M2003
DOD-HDBK-1686
MIL-STD-202,
HPMX-3002
M2003
M2015
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JESD85
Abstract: failure rate Reliability Test Methods for
Text: Silicon Technology Reliability www.vishay.com Vishay Siliconix N-CHANNEL ACCELERATED OPERATING LIFE TEST RESULT Sample Size 2008 Equivalent Device Hours 342 536 204 Failure Rate in FIT 2.657 Failure Rate in FIT is calculated according to JEDEC Standard JESD85, Methods for Calculating Failure Rates in Units of FITs,
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JESD85,
15-May-12
JESD85
failure rate
Reliability Test Methods for
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