OF IGBT
Abstract: IGBT Power Module siemens ag siemens igbt BSM 150 gb 100 d siemens igbt igbt module bsm 300 siemens igbt BSM 300 reliability report and tests for failure rate how can test igbt siemens igbt BSM 75 gb 100 Siemens BSM 50 GB 100 DN1
Text: Status Report for the Improvement Programme for Siemens IGBT Modules Contents: 1. Scope and Reliability requirements 2. Investigations regarding Temperature Cycling and Power Cycling 3. Results of Temperature and Power Cycling tests 4. Figures on Lifetime and Failure Rate
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OF IGBT
IGBT Power Module siemens ag
siemens igbt BSM 150 gb 100 d
siemens igbt
igbt module bsm 300
siemens igbt BSM 300
reliability report and tests for failure rate
how can test igbt
siemens igbt BSM 75 gb 100
Siemens BSM 50 GB 100 DN1
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pj 989
Abstract: PASIC 380 145026 14093 38980 report on PLCC solar cell Amorphous 144TQFP PACKAGE 84 pin plcc ic base QL8X12B-2
Text: pASIC 1 FAMILY Reliability Report SUMMARY The pASIC device is a highly reliable Field Programmable Gate Array. The addition of the ViaLink to a CMOS process does not measurably increase the failure rate of the pASIC devices above that of normal CMOS logic products. The following is the summary of the High
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pp27-30.
pj 989
PASIC 380
145026
14093
38980
report on PLCC
solar cell Amorphous
144TQFP PACKAGE
84 pin plcc ic base
QL8X12B-2
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report on PLCC
Abstract: 40673 plcc 68 QL8X12A reliability report solar cell Amorphous 40673 equivalent ql8x12 144TQFP PACKAGE QL8X12B
Text: SUMMARY August 1997 The pASIC device is a highly reliable Field Programmable Gate Array. The addition of the ViaLink to a CMOS process does not measurably increase the failure rate of the pASIC devices above that of normal CMOS logic products. The following is the summary of the High
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68hc11pa8
Abstract: 68hc11kg4 68B09E 68HC11PH8 HC711KG4 68HC11KA4 68HC57 68HC11L6 HC705B16 motorola 68hc11kg4
Text: MCTG RELIABILITY AND QUALITY 1996 ANNUAL REPORT MRQSY96/D Microcontroller Technologies Group Reliability and Quality 1996 Annual Report To Our Valued Customers: Thank you for selecting Motorola as your preferred supplier of Microcontroller products. We in Motorola’s
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MRQSY96/D
68hc11pa8
68hc11kg4
68B09E
68HC11PH8
HC711KG4
68HC11KA4
68HC57
68HC11L6
HC705B16
motorola 68hc11kg4
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68hc26
Abstract: 68HC05C4 68hc705p9 68HC05B6 JPC3400 68hc805b6 68705r3 68HC05C12 68HC705B5 68HC68SE
Text: CSIC Microcontroller Division Reliability and Quality Quarter 2, 1996 Report MOTOROLA INC., 1996 CSIC MICROCONTROLLER DIVISION RELIABILITY AND QUALITY REPORT TECHNICAL INFORMATION . 1-1 RELIABILITY DATA BY TECHNOLOGY. 2-1
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68HC11L6
Abstract: 68hc11ka4 68HC11PH8 68HC11a1 527 MOSFET TRANSISTOR motorola D65C 68HC05N4 nippon denso 68HC05B6 128 QFP 14x20
Text: CMRQS/D REV 10 MOTOROLA MICROCONTROLLER TECHNOLOGIES GROUP RELIABILITY AND QUALITY MONITOR REPORT Quarter 1, 1997 Semiconductor Product Sector Test results contained herein are for information only. This report does not alter MotorolaÕs standard warranty or product speciÞcations.
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Untitled
Abstract: No abstract text available
Text: Reliability Handbook Contents Integrity and Reliability Package Integrity Tests Device Reliability Tests Appendix 1 Calculations Appendix 2 Example of Failure Rate Calculation INTEGRITY AND RELIABILITY ZETEX Semiconductors’ Reliability department routinely performs a variety of industry standard tests on
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tsop 928
Abstract: No abstract text available
Text: QUALITY & RELIABILITY CYPRESS 2001 Q2 RELIABILITY REPORT TABLE OF CONTENTS 1.0 OVERVIEW OF CYPRESS MANAGEMENT SYSTEM SEMICONDUCTOR 2.0 EARLY FAILURE RATE SUMMARY 2.1 Early Failure Rate Determination 3.0 LONG TERM FAILURE RATE SUMMARY 3.1 Long Term Failure Rate Determination
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mil-std 883d method 1010
Abstract: No abstract text available
Text: QUALITY & RELIABILITY CYPRESS 2001 Q1 RELIABILITY REPORT TABLE OF CONTENTS 1.0 OVERVIEW OF CYPRESS MANAGEMENT SYSTEM SEMICONDUCTOR 2.0 EARLY FAILURE RATE SUMMARY 2.1 Early Failure Rate Determination 3.0 LONG TERM FAILURE RATE SUMMARY 3.1 Long Term Failure Rate Determination
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Untitled
Abstract: No abstract text available
Text: QUALITY & RELIABILITY REPORT April 1995 to March 1996 - EPROM, FLASH Memory, EEPROM and SRAM Products INTRODUCTION SGS-THOMSON manufactures a wide range of memory types which include: Non-volatile memories: FLASH Memory, UV EPROM, OTP EPROM and EEPROMs. EPROM products are manufactured in both 1.5µ NMOS and 0.8
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M27C512 SGS-THOMSON
Abstract: M2201 ST93C46
Text: QUALITY & RELIABILITY REPORT July 1995 to June 1996 - EPROM, FLASH Memory, EEPROM and SRAM Products INTRODUCTION SGS-THOMSON manufactures a wide range of memory types which include: Non-volatile memories: FLASH Memory, UV EPROM, OTP EPROM and EEPROMs. EPROM products are manufactured in both 1.5µ NMOS and 0.8
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TOP SIDE MARKING M27C512
Abstract: No abstract text available
Text: QUALITY & RELIABILITY REPORT October 1995 to September 1996 - EPROM, FLASH Memory, EEPROM and SRAM Products INTRODUCTION SGS-THOMSON manufactures a wide range of memory types which include: Non-volatile memories: FLASH Memory, UV EPROM, OTP EPROM and EEPROMs. EPROM products are manufactured in both 1.5µ NMOS and 0.8
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M27C256B datecode
Abstract: PART MARKING M27C512 M27C256B PART MARKING m27c512 equivalent M27C256 M27C512 marking M27128A M2716 M2764A QRR038
Text: QUALITY & RELIABILITY REPORT July 1996 to June 1997 - EPROM, FLASH Memory, EEPROM and SRAM Products INTRODUCTION SGS-THOMSON manufactures a wide range of memory types which include: Non-volatile memories: Flash memory, UV EPROM, OTP EPROM and EEPROMs. EPROM products are manufactured in both 1.5µ NMOS and 0.8
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Untitled
Abstract: No abstract text available
Text: QUALITY & RELIABILITY CYPRESS 2000 Q4 RELIABILITY REPORT TABLE OF CONTENTS 1.0 OVERVIEW OF CYPRESS MANAGEMENT SYSTEM SEMICONDUCTOR 2.0 EARLY FAILURE RATE SUMMARY 2.1 Early Failure Rate Determination 3.0 LONG TERM FAILURE RATE SUMMARY 3.1 Long Term Failure Rate Determination
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cmos tsmc 0.18
Abstract: No abstract text available
Text: CYPRESS QUALITY & RELIABILITY 2000 Q2 RELIABILITY REPORT TABLE OF CONTENTS 1.0 OVERVIEW OF CYPRESS MANAGEMENT SYSTEM SEMICONDUCTOR 2.0 EARLY FAILURE RATE SUMMARY 2.1 Early Failure Rate Determination 3.0 LONG TERM FAILURE RATE SUMMARY 3.1 Long Term Failure Rate Determination
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TOP SIDE MARKING M27C512
Abstract: m27c512 equivalent 4Q96 M27128A M2716 M2732A M2764A QRR037 4Q96-1Q97 M27C256B datecode
Text: QUALITY & RELIABILITY REPORT April 1996 to March 1997 - EPROM, FLASH Memory, EEPROM and SRAM Products INTRODUCTION SGS-THOMSON manufactures a wide range of memory types which include: Non-volatile memories: FLASH Memory, UV EPROM, OTP EPROM and EEPROMs. EPROM products are manufactured in both 1.5µ NMOS and 0.8
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QRR037/0697
TOP SIDE MARKING M27C512
m27c512 equivalent
4Q96
M27128A
M2716
M2732A
M2764A
QRR037
4Q96-1Q97
M27C256B datecode
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SGS M27C256
Abstract: TOP SIDE MARKING M27C512 M27C256 SGS-THOMSON mk48t08 BV 726 B m27c mk48t18 SGS M2732A Eprom 2015 static ram CP 1005
Text: QUALITY & RELIABILITY REPORT October 1996 to September 1997 - EPROM, FLASH Memory, EEPROM and SRAM Products INTRODUCTION SGS-THOMSON manufactures a wide range of memory types which include: Non-volatile memories: Flash memory, UV EPROM, OTP EPROM and EEPROMs. EPROM products are manufactured in both 1.5µ NMOS and 0.8
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misplaced Wire Bonds
Abstract: TOP SIDE MARKING M27C512 1562Q M27C512 SGS-THOMSON
Text: QUALITY & RELIABILITY REPORT January to December 1995 - EPROM, FLASH Memory, EEPROM and SRAM Products INTRODUCTION SGS-THOMSON manufactures a wide range of memory types which include: Non-volatile memories: FLASH Memory, EPROM, OTP Memory and EEPROMs. EPROM products are manufactured in both 1.5µ NMOS and 0.8
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F 7849
Abstract: SDRAM operating hour reliability
Text: NEC ELECTRONICS INC. -DQXDU\ýìäää 754ðääðíìðêìé 16M SDRAM RELIABILITY REPORT This report contains reliability data on the following CMOS Synchronous DRAM product fabricated and assembled at the NEC Electronics Inc. facility in Roseville, California.
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TRQ-99-01-314
Am241,
Am241)
F 7849
SDRAM operating hour reliability
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MIL-STD-781
Abstract: MIL-HDBK-781 MIL-STD-2068 DI-RELI-80251 MIL-STD-781C MIL-STD-785 MIL-STD-1635 DI-RELI-80250 DI-RELI-80252 MIL-STD-721
Text: MIL-STD-781 17 October D 1986 SUPERSEDING MIL-STD-781C 21 October 1977 MIL-STD-1635 EC 3 February 1978 MIL-STD-2068 (AS) 21 March 1977 MILITARY STANDARD RELIABILITY TESTING FOR ENGINEERING DEVELOPMENT, QUALIFICATION, AND PRODUCTION I I AMSC N3988 DISTRIBUTION
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MIL-STD-781
MIL-STD-781C
MIL-STD-1635
MIL-STD-2068
N3988
L-STD-781
0nGANlu710N
m0RE68
MIL-STD-781
MIL-HDBK-781
MIL-STD-2068
DI-RELI-80251
MIL-STD-781C
MIL-STD-785
DI-RELI-80250
DI-RELI-80252
MIL-STD-721
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ULN2000
Abstract: No abstract text available
Text: RELIABILITY REPORT RELIABILITY OF SERIES U LN 2000A AND U LN 2800A DARLINGTON DRIVERS This report summarizes accelerated-life tests that have been per formed on Series ULN2000/2800A integrated circuits and provides information that can be used to calculate the failure rate at any junction
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ULN2000/2800A
/109unit-hours)
ULN2000
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cecc 50000
Abstract: No abstract text available
Text: RELIABILITY REPORT RELIABILITY AND FAILURE M ECHANISMS FUNDAM ENTALS In its sim plest form the failure rate at a given tem perature is: F.R. : -Through accelerated stresses we ascertain the value of the com ponents failure rates, in term s of how many devices (in percent) are expected to fail
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failures/10
cecc 50000
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atm lu 738
Abstract: No abstract text available
Text: RELIABILITY REPORT RELIABILITY AND FAILURE M ECHANISMS FUNDAM ENTALS -Through accelerated stresses we ascertain the value of the com ponents failure rates, in term s of how many devices in percent are expected to fail every 1000 hours of operation (X or F.R.)
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failures/10
100cC/watt
atm lu 738
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ULN2000
Abstract: ULN2000A VLN2000A ULN2800 UDN2980A VLN2800A 099-4
Text: RELIABILITY REPORT RELIABILITY OF SERIES ULN2000A AND VLN 2800A D ARLIN G TO N D RIVERS This report summ arizes accelerated-life tests that have been per form ed on Series ULN2000/2800A integrated circuits and provides information that can be used to calculate the failure rate at any junction
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VLN2000A
VLN2800A
ULN2000/2800A
/109unit-hours)
0x108
ULN2000
ULN2000A
ULN2800
UDN2980A
099-4
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