5 pin SUGAR CUBE RELAY
Abstract: SUGAR CUBE RELAY 12v reed relay 7A 250V solid state relay 220v 10a solid state relay 240v 10a pcb 5 pin SUGAR CUBE RELAY pcb relay 6v 12V 30A Relay relay 5v 100 ohm for ac SUGAR CUBE RELAY 12v 10
Text: RELAY LOW PROFILE SMT SIGNAL RELAY-TYPE RT1 Adam Technologies, Inc. R SERIES INTRODUCTION: Adam Tech RT1 relays are modern, low profile, signal level relays offered in an ultra small package with SMT terminals and are available with coil voltages from 5-48VDC. These 2 form C relays are
|
Original
|
PDF
|
5-48VDC.
140mw
SSR1A-350-170-20-6T
SSR2A-250-170-15-8T
SSR2A-350-120-25-8T
SSR1A1B-250-150-20-8T
SSR1A1B-350-120-25-8T
SSR1A1B-350-120-35-8T
SSR1B-350-120-35-6T
5 pin SUGAR CUBE RELAY
SUGAR CUBE RELAY 12v
reed relay 7A 250V
solid state relay 220v 10a
solid state relay 240v 10a pcb
5 pin SUGAR CUBE RELAY pcb
relay 6v
12V 30A Relay
relay 5v 100 ohm for ac
SUGAR CUBE RELAY 12v 10
|
relay 6v 100 ohm
Abstract: relay 6v 150 ohm
Text: Series QB00FM Optically Isolated Bi-Directional & DC Output Bi-Directional Solid-State Relay Part Number* Relay Description QB00FM ±7.5A @ ±150Vdc Output ,Solid State Relay * The Y suffix denotes parameters tested to MIL-PRF-28750 specifications. The W suffix denotes parameters tested to Teledyne specifications.
|
Original
|
PDF
|
QB00FM
150Vdc
MIL-PRF-28750
QB00FM
QB00FM\072002\Q1
relay 6v 100 ohm
relay 6v 150 ohm
|
QB00FM
Abstract: No abstract text available
Text: Series QB00FM Optically Isolated Bi-Directional & DC Output Bi-Directional Solid-State Relay Part Number* Relay Description QB00FM ±7.5A @ ±150Vdc Output ,Solid State Relay * The Y suffix denotes parameters tested to MIL-PRF-28750 specifications. The W suffix denotes parameters tested to Teledyne specifications.
|
Original
|
PDF
|
QB00FM
150Vdc
MIL-PRF-28750
QB00FM
QB00FM\072002\Q1
|
EN 50205 dold
Abstract: DPDT 12V 5A DC Relay 06081 24VDC relay pcb mount dold OA 5669 12V RELAY 2NO 2NC RELAY PCB mount DPDT 12V 15 amp 14 pin bd 5987 OA-11 solid state relay 240v 10a pcb
Text: Altech Corporation Since 1984, Altech Corporation has grown to become a leading supplier of automation and industrial control components. Headquartered in Flemington, NJ, Altech has an experienced staff of engineering, manufacturing and sales personnel to provide the highest quality products with superior service. This is the Altech
|
Original
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: Safety_Relays_2008.QXD_SafetyRelays2005.QXD 1/8/13 9:29 AM Page 2 Altech Corporation Since 1984, Altech Corporation has grown to become a leading supplier of automation and industrial control components. Headquartered in Flemington, NJ, Altech has an experienced staff of engineering, manufacturing
|
Original
|
PDF
|
SafetyRelays2005
|
OA 5621
Abstract: dold OA 5621 solid state relay 240v 10a pcb OA56 1500VA bd5987 RELAY PCB mount DPDT 12V 15 amp 14 pin bd 5987 OA70 56.OW70.2431C
Text: Altech Corporation Since 1984, Altech Corporation has grown to become a leading supplier of automation and industrial control components. Headquartered in Flemington, NJ, Altech has an experienced staff of engineering, manufacturing and sales personnel to provide the highest quality products with superior service. This is the Altech
|
Original
|
PDF
|
|
relay 5 pin 12v 6a
Abstract: normal relay for controlling 230v ac by using 5v dold OA 5669 DPDT relay 12v 12V RELAY 2NO 2NC 5 pin relay 12vdc OA 5669 RELAY PCB DPDT 12V relay 12v 10a relay 24v 10a
Text: Altech Corporation Since 1984, Altech Corporation has grown to become a leading supplier of automation and industrial control components. Headquartered in Flemington, NJ, Altech has an experienced staff of engineering, manufacturing and sales personnel to provide the highest quality products with superior service. This is the Altech
|
Original
|
PDF
|
|
bi-directional switches FET
Abstract: BD5a BD8 diode
Text: Bi-Directional Solid State Relay QB00FM OPTICALLY ISOLATED BI-DIRECTIONAL AND DC OUTPUT Part Number* Relay Description QB00FM ±10A @ ±150Vdc Output Solid State Relay DC * The Y suffix denotes parameters tested to MIL-R-28750 specifications. The W suffix denotes parameters tested to Teledyne specifications.
|
Original
|
PDF
|
QB00FM
150Vdc
MIL-R-28750
bi-directional switches FET
BD5a
BD8 diode
|
diode 1n4007
Abstract: 89052 relay 12v 220v 15a diode 1N4007 specifications dual pole 12V DC Relay 1N4007 relay tv3 15 V DC, 16A, 250V AC 1 Form A miniature relay 5V relay 220v ac diode,1N4007
Text: RELAY MODULES RMH1- 1 Channel Single Pole Double Throw INTERFACES Relay Modules - High Current Isolated Channels - 15 Amp 35 or 32mm DIN Rail L L 87 43 . 3 . in 15A at 250V AC/30V DC 8A at 250V AC/30V DC (TV-3): 3A at 120V AC 1/3hp at 120V AC 1/2hp at 250V AC
|
Original
|
PDF
|
TS35x7
TS32x15
50/60Hz)
1N4007
000VA
diode 1n4007
89052
relay 12v 220v 15a
diode 1N4007 specifications
dual pole 12V DC Relay
relay tv3
15 V DC, 16A, 250V AC 1 Form A miniature relay
5V relay 220v ac
diode,1N4007
|
Untitled
Abstract: No abstract text available
Text: AZ977 20 AMP MINIATURE POWER RELAY FOR AUTOMOTIVE USE FEATURES • • • • • • • Low Cost Up to 20 Amp switching capability in a compact size Coils to 24 VDC Small footprint 1 Form A and C contacts available Vibration and shock resistant Designed for high in-rush applications
|
Original
|
PDF
|
AZ977
AZ977-1A-6DS
AZ977â
AZ977-1C-6DS
12/30/98W
|
12V 150 ohms relay
Abstract: 4PDT 12V BR15X150 relay 12v 400 ohms wound bifilar crystal case styles MIL-PRF-39016
Text: BR15 Crystal Can Welded • 4PDT Dry Circuit to 5 Amps, 7.5 Amps & 10 Amps • AVAILABLE WITH ARC SHIELDS… for grounded case operation on 115 VAC loads, to 10 Amps • AVAILABLE WITH BIFILAR WOUND COIL… for inductive spike suppression • SPACE ENVIRONMENT VERSIONS… can be manufactured under extreme high-reliability controls
|
Original
|
PDF
|
MIL-PRF-39016.
BR15X
BR15W.
BR15Y
12V 150 ohms relay
4PDT 12V
BR15X150
relay 12v 400 ohms
wound bifilar
crystal case styles
MIL-PRF-39016
|
AZ978
Abstract: relay spdt 6v 100 ohms spdt relays 12v ISO14000
Text: AZ978 20 AMP MINIATURE PCB POWER RELAY FOR AUTOMOTIVE USE FEATURES • Up to 20 Amp switching capability in a compact size • Coils to 24 VDC • Small footprint • 1 Form A and C contacts available • Vibration and shock resistant • QS9000, ISO9001, ISO14000
|
Original
|
PDF
|
AZ978
QS9000,
ISO9001,
ISO14000
AZ978
relay spdt 6v 100 ohms
spdt relays 12v
ISO14000
|
12V RELAY 2NO 2NC
Abstract: AgNi10 relay footprints OA5611 relay low solid coil dc 12v Mixed Relay relay 230V DC
Text: Safety Relay OA 5611 Features n 4 output contacts n International approvals: TÜV, UL, cUL, CSA n Quality control check for each safety relay n Forced-guided contacts, all gold flash plated n Contact Gap > 0.5 mm throughout life of relay n Various contact materials,
|
Original
|
PDF
|
-IP67
AgNi10+
AgNi10
12V RELAY 2NO 2NC
relay footprints
OA5611
relay low solid coil dc 12v
Mixed Relay
relay 230V DC
|
BR8-10K
Abstract: 12V 150 ohms relay Babcock relay
Text: BR8 Crystal Can DPDT Dry Circuit to 2 Amps SPECIFICATIONS GENERAL Contact Arrangement . 2PDT 2 Form C Weight. 1.0 oz approx. Designed to meet the requirements of MIL-PRF-39016.
|
Original
|
PDF
|
MIL-PRF-39016.
BR8H-20K(
-115V
BR8-10K(
BR8-10K
12V 150 ohms relay
Babcock relay
|
|
|
12V RELAY 2NO 2NC
Abstract: oa5602
Text: Safety Relay OA 5602 Features n 6 output contacts n International approvals: TÜV, CSA, UL, cUL n Quality control check for each safety relay n Forced-guided contacts, all gold flash plated n Contact gap > 0.5 mm throughout life of relay n Various contact materials,
|
Original
|
PDF
|
AgNi10+
AgNi10
12V RELAY 2NO 2NC
oa5602
|
BUZ76A
Abstract: TA17404 BUZ76 TB334
Text: BUZ76A Semiconductor Data Sheet 2.6A, 400V, 2.500 Ohm, N-Channel Power MOSFET October 1998 File Number 2265.1 Features • 2.6A, 400V [ /Title This is an N-Channel enhancement mode silicon gate power • rDS ON = 2.500Ω (BUZ76 field effect transistor designed for applications such as
|
Original
|
PDF
|
BUZ76A
BUZ76
TA17404.
BUZ76A
TA17404
TB334
|
BUZ76
Abstract: TA17404 TB334
Text: BUZ76 Semiconductor Data Sheet 3A, 400V, 1.800 Ohm, N-Channel Power MOSFET October 1998 File Number 2264.1 Features • 3A, 400V [ /Title This is an N-Channel enhancement mode silicon gate power • rDS ON = 1.800Ω (BUZ76) field effect transistor designed for applications such as
|
Original
|
PDF
|
BUZ76
BUZ76)
TA17404.
BUZ76
TA17404
TB334
|
an7254
Abstract: AN7260 RFM3N45 RFM3N50 RFP3N45 RFP3N50 TB334 TA17405
Text: [ /Title /Subject () /Autho r () /Keywords () /Creator () /DOCI NFO pdfmark [ /PageMode /UseOutlines /DOCVIEW pdfmark RFM3N45, RFM3N50, RFP3N45, RFP3N50 Semiconductor Data Sheet 3A, 450V and 500V, 3 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate
|
Original
|
PDF
|
RFM3N45,
RFM3N50,
RFP3N45,
RFP3N50
TB334
an7254
AN7260
RFM3N45
RFM3N50
RFP3N45
RFP3N50
TB334
TA17405
|
Untitled
Abstract: No abstract text available
Text: DOUGLAS RANDALL, INC 24 Form 'C' Solid State Relays - A C O utput up to 40 Amps/300 volts CA CD S eries Features & General Specifications • O utput configuration, Triac or Back-to-Back SCR's. Form C (SPD T), Break-Before-Make • LED indicators provide visual indication of active output.
|
OCR Scan
|
PDF
|
Amps/300
CD15B
CD40B
V320LA20A
|
AN9321
Abstract: AN9322 an7254 AN7260
Text: RF3V49092, RF3S49092SM in t e ik il D a ta S h e e t 20A/10A, 12V, 0.060/0.140 Ohm, Logic Level, Complementary Power MOSFET These complementary power MOSFETs are manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI integrated
|
OCR Scan
|
PDF
|
RF3V49092,
RF3S49092SM
0A/10A,
AN7254
AN7260.
RF3S49092SM
AN9321
AN9322
AN7260
|
Untitled
Abstract: No abstract text available
Text: RF1K49211 in t e f s il Da ta S h e e t A u g u s t 1999 7A, 12V, 0.020 Ohm, Logic Level, Single N-Channel LittleFET Power MOSFET The RF1K49211 Single N-Channel power MOSFET is manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI
|
OCR Scan
|
PDF
|
RF1K49211
RF1K49211
AN7254
AN7260.
|
Untitled
Abstract: No abstract text available
Text: S IRFPG40, IRFPG42 S e m ico n d ucto r y 4.3A and 3.9A, 1000V, 3.5 and 4.2 Ohm, N-Channel Power MOSFETs January 1998 Description Features • IRFPG40: 4.3A, 1000V, r D S O N = These are N-Channel enhancem ent mode silicon gate power field effect transistors. They are advanced power
|
OCR Scan
|
PDF
|
IRFPG40,
IRFPG42
IRFPG40:
|
relay 12v mtbf
Abstract: No abstract text available
Text: m MDR-60 6 0 W S i n gl e O u t p u t I nd us t r i a l DIN Rail P o w e r S u p p l y series I Features : Universal AC input/Full range Protections: Short circuit / Overload / O vervoltage Cooling by free air convection Can be installed on DIN rail TS-35/7.5 or 15
|
OCR Scan
|
PDF
|
MDR-60
TS-35/7
120mVp-p
500ms,
30ms/115VAC
150mVp-p
200mVp-p
VO80-SPE
60KHz
relay 12v mtbf
|
Untitled
Abstract: No abstract text available
Text: m MDR-40 4 0 W S i n gl e O u t p u t I nd us t ri al DIN Rail P o w e r S u p p l y series I Features : Universal AC input/Full range Protections: Short circuit / Overload / O vervoltage Cooling by free air convection Can be installed on DIN rail TS-35/7.5 or 15
|
OCR Scan
|
PDF
|
MDR-40
TS-35/7
120mVp-p
500ms,
30ms/115VAC
150mVp-p
200mVp-p
60KHz
-40-S
|
