3.3kOhm
Abstract: No abstract text available
Text: Renesas LSIs M5M29KB/T641AVP 67,108,864-BIT 8,388,608-WORD BY 8-BIT /4,194,304-WORD BY 16-BIT CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION The M5M29KB/T641AVP are 3.3V-only high speed 67,108,864-bit CMOS boot block FLASH Memories with alternating BGO(Back Ground Operation) feature. The BGO
|
Original
|
PDF
|
M5M29KB/T641AVP
864-BIT
608-WORD
304-WORD
16-BIT)
M5M29KB/T641AVP
864-bit
REJ03C0024
3.3kOhm
|
Untitled
Abstract: No abstract text available
Text: Renesas LSIs Preliminary M5M29KB/T641AVP Notice: This is not a final specification. Some parametric limits are subject to change. 67,108,864-BIT 8,388,608-WORD BY 8-BIT /4,194,304-WORD BY 16-BIT CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION The M5M29KB/T641AVP are 3.3V-only high speed
|
Original
|
PDF
|
M5M29KB/T641AVP
864-BIT
608-WORD
304-WORD
16-BIT)
M5M29KB/T641AVP
864-bit
REJ03C0024
|
Untitled
Abstract: No abstract text available
Text: Renesas LSIs M5M29KB/T641AVP 67,108,864-BIT 8,388,608-WORD BY 8-BIT /4,194,304-WORD BY 16-BIT CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION The M5M29KB/T641AVP are 3.3V-only high speed 67,108,864-bit CMOS boot block FLASH Memories with alternating BGO(Back Ground Operation) feature. The BGO
|
Original
|
PDF
|
M5M29KB/T641AVP
864-BIT
608-WORD
304-WORD
16-BIT)
M5M29KB/T641AVP
864-bit
REJ03C0024
|