Eye Blink Sensor block
Abstract: zx-eda11 CLASS II LASER EN60825-1 zx-lda11-n ZX-LD40L ZX-LDA11 distance measurement using camera based ir sensor high accuracy LD30V ZX-LT001 ZX-LT005
Text: Smart Sensors Laser Type ZX Series (ZX-L-N) . Ordering Information • Sensors Sensor Heads (Reflective) Optical system Diffuse reflective Beam shape Spot beam Line beam Regular reflective Spot beam Sensing distance Resolution*1 Model 40±10 mm 2 µm ZX-LD40
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ZX-LD300
ZX-LD40L
ZX-LD100L
ZX-LD300L
ZX-LD100
ZX-LD40
ZX-LD30V
ZX-LD30VL
Eye Blink Sensor block
zx-eda11
CLASS II LASER EN60825-1
zx-lda11-n
ZX-LD40L
ZX-LDA11
distance measurement using camera based ir sensor high accuracy
LD30V
ZX-LT001
ZX-LT005
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Eye Blink Sensor block
Abstract: ld30v ZX-LDA11-N ZX-LDA11 zx-eda11 ZX-LDA41-N IEC-825-1 ZX-LD40 LD30 ZX-LT010
Text: Smart Sensors Laser Type ZX Series (ZX-L-N) . Ordering Information • Sensors Sensor Heads (Reflective) Optical system Diffuse reflective Beam shape Spot beam Line beam Regular reflective Spot beam Sensing distance Resolution*1 Model 40±10 mm 2 µm 100±40 mm
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ZX-LD40L
ZX-LD100L
ZX-LD300L
ZX-LD300
ZX-LD100
ZX-LD30V
ZX-LD40
ZX-LD30VL
E349-E1
75-344-7068/Fax:
Eye Blink Sensor block
ld30v
ZX-LDA11-N
ZX-LDA11
zx-eda11
ZX-LDA41-N
IEC-825-1
ZX-LD40
LD30
ZX-LT010
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CNB2003
Abstract: C05 07
Text: Reflective Photosensors Photo Reflectors CNB2003 Reflective photosensor 0.35 Chip center • Object sensing, non-contact point SW 2 0.7 1.7 • Applications 2.7 6.1±0.3 C0.5 0.7 max. • Reflow-compatible reflective photosensor • Ultraminiature, thin type: 2.7 mm x 3.4 mm (height: 1.5 mm)
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CNB2003
CNB2003
C05 07
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Untitled
Abstract: No abstract text available
Text: GP2S29SVJ00F GP2S29SVJ00F Phototransistor Output, Compact, Case type, Injection for prism system, Reflective Photointerrupter •Description ■Agency approvals/Compliance GP2S29SVJ00F is a compact reflective type photointerrupter of phototransistor output.
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GP2S29SVJ00F
GP2S29SVJ00F
2002/95/EC)
OP14032EN
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Untitled
Abstract: No abstract text available
Text: Photoelectrics Accessories Right Angle Reflector, M18 • Right angle reflector turns sensing direction 90° of M18 cylindrical photoelectric sensors • To be used for: diffuse reflective, retro-reflective, polarized retro-reflective and through beam sensors
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18-RAR
APA18-RAR
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circular polarizer touch
Abstract: "Touch Screen" linear polarizer touch screen touch panel for film type
Text: Bulletin No.：AMTNE08031 2008/ 08/ 06 AMT CR Circular Type Low Reflective Touch Screen - 1/4λ Retardation Film AMT Low Reflective touch screen has 2 types, the CR (Circular Polarizer) and the LN (Linear Polarizer). The CR (Circular) low reflective touch screen is laminating a linear polarizer film and
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AMTNE08031
circular polarizer touch
"Touch Screen"
linear polarizer
touch screen
touch panel for film type
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retro reflective sensor
Abstract: Photoelectric APA18-RAR PHOTOELECTRIC SENSORS DATA SHEET retro apa18r reflector sensor datasheet 18-RAR diffuse sensor reflective sensor
Text: Photoelectrics Accessories Right Angle Reflector, M18 • Right angle reflector turns sensing direction 90° of M18 cylindrical photoelectric sensors • To be used for: diffuse reflective, retro-reflective, polarized retro-reflective and through beam sensors
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18-RAR
APA18-RAR
retro reflective sensor
Photoelectric
APA18-RAR
PHOTOELECTRIC SENSORS DATA SHEET
retro
apa18r
reflector sensor datasheet
18-RAR
diffuse sensor
reflective sensor
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CNZ2253
Abstract: ON2253
Text: Reflective Photosensors Photo Reflectors CNZ2253 (ON2253) Reflective Photosensor Mark for indicating LED side 7.5±0.2 (3.2) 4.0±0.2 CNZ2253 is a photosensor detecting the change of reflective light in which a high efficiency GaAs infrared light emitting diode is used
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CNZ2253
ON2253)
CNZ2253
ON2253
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CNB2001
Abstract: No abstract text available
Text: Reflective Photosensors Photo Reflectors CNB2001 Reflective Photosensor Unit : mm Overview 3.4 1.8 CNB2001 is a small, thin SMD-compatible reflective photosensor consisting of a high efficiency GaAs infrared light emitting diode which is integrated with a high sensitivity Darlington phototransistor
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CNB2001
CNB2001
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CNZ2153
Abstract: ON2153
Text: Reflective Photosensors Photo Reflectors CNZ2153 (ON2153) Reflective Photosensor Features Fast response Small size and light weight Unit : mm 4.0±0.2 0.5 10.6±0.3 9.6±0.3 10.2 min. 6.0±0.2 1.7±0.2 CNZ2153 is a photosensor detecting the change of reflective light
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CNZ2153
ON2153)
CNZ2153
ON2153
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ic measurement type
Abstract: Reflective photosensor high sensitivity reflective phototransistor CNB2001
Text: Reflective Photosensors Photo Reflectors CNB2001 Reflective Photosensor Unit : mm Overview 3.4 1.8 CNB2001 is a small, thin SMD-compatible reflective photosensor consisting of a high efficiency GaAs infrared light emitting diode which is integrated with a high sensitivity Darlington phototransistor
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CNB2001
CNB2001
ic measurement type
Reflective photosensor
high sensitivity reflective phototransistor
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Untitled
Abstract: No abstract text available
Text: Reflective Photosensors Photo Reflectors CNB2001 Reflective Photosensor Unit : mm Outline 3.4 1.8 CNB2001 is a small, thin SMD-compatible reflective photosensor consisting of a high efficiency GaAs infrared light emitting diode which is integrated with a high sensitivity Darlington phototransistor
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CNB2001
CNB2001
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Reflective photosensor response time
Abstract: CNB1001 high sensitivity reflective phototransistor Reflective photosensor CNB1002
Text: Reflective Photosensors Photo Reflectors CNB1001, CNB1002 Reflective Photosensors Unit : mm 3.4 1.8 Overview CNB1001 and CNB1002 are a small, thin SMD-compatible reflective photosensor consisting of a high efficiency GaAs infrared light emitting diode which is integrated with a high sensitivity Si
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CNB1001,
CNB1002
CNB1001
CNB1002
CNB1001
Reflective photosensor response time
high sensitivity reflective phototransistor
Reflective photosensor
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3tf4
Abstract: Reflective photosensor response time high sensitivity reflective phototransistor CNB1302
Text: Reflective Photosensors Photo Reflectors CNB1302 Reflective Photosensor Unit : mm Overview 9.0±1.0 CNB1302 is a small, thin reflective photosensor consisting of a high efficiency GaAs infrared light emitting diode which is integrated with a high sensitivity Si phototransistor in a single resin package.
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CNB1302
CNB1302
3tf4
Reflective photosensor response time
high sensitivity reflective phototransistor
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Untitled
Abstract: No abstract text available
Text: Reflective Photosensors Photo Reflectors ON2180 Reflective Photosensor Unit : mm Outline 9.0±1.0 ON2180 is a small, thin reflective photosensor consisting of a high efficiency GaAs infrared light emitting diode which is integrated with a high sensitivity Si phototransistor in a single resin package.
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ON2180
ON2180
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Photointerrupter sharp
Abstract: No abstract text available
Text: Sharp Microelectronics of the Americas Subminiature Reflective Photointerrupter Life Cycle Status High Volume Production Summary Product Availability Mass Production GP2S27BC Subminiature reflective photointerrupter with phototransistor output. Package Sub-Miniature Type Phototransistor output
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GP2S27BC
Photointerrupter sharp
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E3T-SR41
Abstract: E3T-FT11
Text: Photoelectric Sensor with Built-in Amplifier Ultracompact and Thin Type E3T CSM_E3T_DS_E_6_1 New Retro-reflective Sensors Added to the Series. Further Contributions to Equipment Downsizing. • Coaxial Retro-reflective for reliable positioning applications.
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CNB1001
Abstract: CNB1002
Text: Reflective Photosensors Photo Reflectors CNB1001, CNB1002 Reflective Photosensors Unit : mm 3.4 1.8 Overview CNB1001 and CNB1002 are a small, thin SMD-compatible reflective photosensor consisting of a high efficiency GaAs infrared light emitting diode which is integrated with a high sensitivity Si
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CNB1001,
CNB1002
CNB1001
CNB1002
CNB1001
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CNB2301
Abstract: ON2270 Reflective photosensor response time
Text: Reflective Photosensors Photo Reflectors CNB2301 (ON2270) Reflective Photosensor Unit : mm Overview 9.0±1.0 CNB2301 is a small, thin reflective photosensor consisting of a high efficiency GaAs infrared light emitting diode which is integrated with a high sensitivity Darlington phototransistor used as the photo
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CNB2301
ON2270)
CNB2301
ON2270
Reflective photosensor response time
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Untitled
Abstract: No abstract text available
Text: Reflective Photosensors Photo Reflectors CNB1001, CNB1002 Reflective Photosensors Unit : mm 3.4 1.8 Outline CNB1001 and CNB1002 are a small, thin SMD-compatible reflective photosensor consisting of a high efficiency GaAs infrared light emitting diode which is integrated with a high sensitivity Si
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CNB1001,
CNB1002
CNB1001
CNB1002
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LTD211R11
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE SSE 3> • bb53T31 Q01b25b S ■ T ^ tf -3g’ Optoelectronic Devices LIQUID CRYSTAL DISPLAYS, STANDARD in order of character size) 6.0 Reflective F-11 Transflective X 20.3 6.0 Reflective Transffective F-21 6.0 Reflective Transflective
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bb53T31
Q01b25b
LTD101R-11
LTD203R-11
LTD201R-11
LTD234R-11
LTD233R-11
LTD211R-11
LTD211R11
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2Y DIODE SMD
Abstract: Reflective photosensor 2Y SMD high sensitivity reflective phototransistor Photosensor CNB2001
Text: Panasonic Reflective Photosensors Photo Reflectors CNB2001 Reflective Photosensor • Outline CNB2001 is a small, thin SM D-compatible reflective photosensor consisting o f a high efficiency GaAs infrared light em itting diode which is integrated with a high sensitivity Darlington phototransistor
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CNB2001
CNB2001
2Y DIODE SMD
Reflective photosensor
2Y SMD
high sensitivity reflective phototransistor
Photosensor
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ON2170
Abstract: high sensitivity reflective phototransistor
Text: Panasonic Reflective Photosensors Photo Reflectors ON2170 Reflective Photosensor • Outline Unit : mm Mark for indicating anode side C0.5 O N2170 is a small, thin reflective photosensor consisting of a high efficiency GaAs infrared light emitting diode which is integrated
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ON2170
ON2170
high sensitivity reflective phototransistor
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0PB711
Abstract: No abstract text available
Text: 10 OPTEK Reflective Assemblies Reflective assemblies are motion or position sensors that provide non-contact sensing of a reflective surface or a change in surface reflectivity. Such an assembly consists of an infrared emitting diode IRED and sensor (an NPN silicon phototransistor, photodarlington
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OPB708,
OP709
OPB706
0PB711
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