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    RECTIFIER DIODE 1N4001 Search Results

    RECTIFIER DIODE 1N4001 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CRG09A Toshiba Electronic Devices & Storage Corporation General-purpose diode, 400 V, 1 A , Rectifier Diode, S-FLAT Visit Toshiba Electronic Devices & Storage Corporation
    CMG03A Toshiba Electronic Devices & Storage Corporation General-purpose diode, 600 V, 2 A , Rectifier Diode, M-FLAT Visit Toshiba Electronic Devices & Storage Corporation
    CRG11B Toshiba Electronic Devices & Storage Corporation General-purpose diode, 400 V, 0.4 A , Rectifier Diode, S-FLAT Visit Toshiba Electronic Devices & Storage Corporation
    CRG10A Toshiba Electronic Devices & Storage Corporation General-purpose diode, 600 V, 0.7 A , Rectifier Diode, S-FLAT Visit Toshiba Electronic Devices & Storage Corporation
    CRG09B Toshiba Electronic Devices & Storage Corporation General-purpose diode, 400 V, 1 A , Rectifier Diode, S-FLAT Visit Toshiba Electronic Devices & Storage Corporation

    RECTIFIER DIODE 1N4001 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    SR506 Diode

    Abstract: diode 6A 1000v SM4007 Diode Diode SR360 diode her307
    Text: Room I, Floor 4, 13 Yip Fung Street, Hong Kong Tel: +86 769 8118 8110 or +852 8106 7033 Fax: +852 8106 7099 Kingtronics Diode & Rectifier List Diode Rectifier Diode Rectifier M7 SMD4001-4007 Diode SR560 (5A 60V) Bulk RoHS. DO-27 S1A -S1M Diode UF4004 (1А 400V) Bulk RoHS. DO-41


    Original     		SMD4001-4007) SR560 DO-27 UF4004 DO-41 UF4007 10A10 LL4148 FR101-FR107 SR506 Diode diode 6A 1000v SM4007 Diode Diode SR360 diode her307 PDF

    2510W

    Abstract: RS1M diode
    Text: Email: info@kingtronics.com Web: www.kingtronics.com Tel: +86 769 81188110 or +852 8106 7033 Fax: +852 8106 7099 Kingtronics Diode & Bridge Rectifier List UL ISO Manufacturer since 1990 Diode Recitifer M7 DO-214AC (1A 1000V)SMA Bridge Rectifier ABS2-ABS6; ABS8; ABS10


    Original     		DO-214AC ABS10 LL4148 MB10S SM4007 MB10M DB101-DB107; DB151-DB157 DB101S-DB107S; 2510W RS1M diode PDF

    secos gmbh

    Abstract: c945 p 331 transistor npn SM2150AM SM1150AM c945 p 331 transistor SMBJ11CA 2sd2142 SM4005A SSG8 pzt649
    Text: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier C1 - C5 Fast Rectifier D1 - D3 Low Loss Super Fast Bridge E1 - E3 F1 High Efficiency G1 - G4 Schottky H1 - H3 Switching I1- I3 PiN Diode J1 Bridge Rectifier 》 Fast Bridge Rectifiers


    Original     		SGSR809-A SC-59 SGSR809-B SGSR809-C SGSR809-D SGSR809-E secos gmbh c945 p 331 transistor npn SM2150AM SM1150AM c945 p 331 transistor SMBJ11CA 2sd2142 SM4005A SSG8 pzt649 PDF

    mur1650

    Abstract: T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount
    Text: MBRB1045 Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and


    Original     		MBRB1045 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 mur1650 T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount PDF

    FE16B

    Abstract: mbr3045pt transistor FR102 SOD-123 1N4007 sod-123 BYV43-45 BYV19-45 MUR1660CT equivalent MUR460 BL FEP16DT 0032 mur420 equivalent
    Text: MBRP60035CTL Preferred Device POWERTAP II SWITCHMODE Power Rectifier The SWITCHMODE Power Rectifier uses the Schottky Barrier principle with a platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction —


    Original     		MBRP60035CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 FE16B mbr3045pt transistor FR102 SOD-123 1N4007 sod-123 BYV43-45 BYV19-45 MUR1660CT equivalent MUR460 BL FEP16DT 0032 mur420 equivalent PDF

    DI108S

    Abstract: SK5100 CP2506 sb5200 SB840
    Text: Diode & Rectifiers Diode & Rectifiers MERITEK RoHS TABLE OF CONTENT • PLASTIC PASSIVATED JUNCTION RECTIFIER o General Purpose


    Original     		38x45Â DI108S SK5100 CP2506 sb5200 SB840 PDF

    MR2835S equivalent

    Abstract: A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502
    Text: MBR6045PT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected


    Original     		MBR6045PT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 MR2835S equivalent A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502 PDF

    equivalent components of diode 1N5399

    Abstract: diode ses5001 6A10 BL diode equivalent for fr302 diode equivalent components of diode her104 fe8b diode FE8D gi756 diode A14F diode MUR420 diode
    Text: MBR6045WT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected


    Original     		MBR6045WT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 equivalent components of diode 1N5399 diode ses5001 6A10 BL diode equivalent for fr302 diode equivalent components of diode her104 fe8b diode FE8D gi756 diode A14F diode MUR420 diode PDF

    1N4007 sma

    Abstract: 1N4007 DO-214AC DIODE 1N4001 CHARACTERISTICS DIODE 1N4007 1N4001 SMA 1N4001 1N4007 NRD4003
    Text: Surface Mount Silicon Rectifier Diode NRD Series FEATURES • • • • • • VOLTAGE: 50 TO 1000 VOLTS, CURRENT; 1.0 AMPERE CORRESPONDS TO 1N4001 THRU 1N4007 IN SURFACE MOUNT PACKAGE FLAT PACK - LOW PROFILE, FOR SURFACE MOUNT APPLICATIONS GLASS PASSIVATED CHIP CONSTRUCTION


    Original     		1N4001 1N4007 250OC/10 SMA/DO-214AC EIA-RS-481) 013mm) 50mVp-p 1N4007 sma 1N4007 DO-214AC DIODE 1N4001 CHARACTERISTICS DIODE 1N4007 1N4001 SMA NRD4003 PDF

    1n4001 trr

    Abstract: No abstract text available
    Text: Surface Mount Silicon Rectifier Diode NRD Series FEATURES VOLTAGE: 50 TO 1000 VOLTS, CURRENT; 1.0 AMPERE CORRESPONDS TO 1N4001 THRU 1N4007 IN SURFACE MOUNT PACKAGE FLAT PACK - LOW PROFILE, FOR SURFACE MOUNT APPLICATIONS GLASS PASSIVATED CHIP CONSTRUCTION HIGH TEMPERATURE SOLDERING 250OC/10 SECONDS


    Original     		1N4001 1N4007 250OC/10 SMA/DO-214AC EIA-RS-481) NRD4001 NRD4007) 1n4001 trr PDF

    surface mount diode w1

    Abstract: 1N4007 RECTIFIER DIODE surface mount 1n4007 1N4001 SMA silicon diode 1N4001 specifications 1N4007 sma NRD4007 1N4007 DO-214AC EIA rs 481 surface mount
    Text: Surface Mount Silicon Rectifier Diode NRD Series FEATURES VOLTAGE: 50 TO 1000 VOLTS, CURRENT; 1.0 AMPERE CORRESPONDS TO 1N4001 THRU 1N4007 IN SURFACE MOUNT PACKAGE FLAT PACK - LOW PROFILE, FOR SURFACE MOUNT APPLICATIONS GLASS PASSIVATED CHIP CONSTRUCTION HIGH TEMPERATURE SOLDERING 250OC/10 SECONDS


    Original     		1N4001 1N4007 250OC/10 SMA/DO-214AC EIA-RS-481) RS-481-A surface mount diode w1 1N4007 RECTIFIER DIODE surface mount 1n4007 1N4001 SMA silicon diode 1N4001 specifications 1N4007 sma NRD4007 1N4007 DO-214AC EIA rs 481 surface mount PDF

    1N4007 sma

    Abstract: DIODE 4004 4004 diode 1N4001 SMA SURFACE MOUNT SILICON RECTIFIER surface mount 1n4007 1N4007 DO-214AC 1N4001 1N4007 NRD4007
    Text: Surface Mount Silicon Rectifier Diode NRD Series FEATURES • • • • • • VOLTAGE: 50 TO 1000 VOLTS, CURRENT; 1.0 AMPERE CORRESPONDS TO 1N4001 THRU 1N4007 IN SURFACE MOUNT PACKAGE FLAT PACK - LOW PROFILE, FOR SURFACE MOUNT APPLICATIONS GLASS PASSIVATED CHIP CONSTRUCTION


    Original     		1N4001 1N4007 250OC/10 SMA/DO-214AC EIA-RS-481) NRD4001 NRD4007) 1N4007 sma DIODE 4004 4004 diode 1N4001 SMA SURFACE MOUNT SILICON RECTIFIER surface mount 1n4007 1N4007 DO-214AC NRD4007 PDF

    surface mount 1n4007

    Abstract: No abstract text available
    Text: Surface Mount Silicon Rectifier Diode NRD Series FEATURES • • • • • • VOLTAGE: 50 TO 1000 VOLTS, CURRENT; 1.0 AMPERE CORRESPONDS TO 1N4001 THRU 1N4007 IN SURFACE MOUNT PACKAGE FLAT PACK - LOW PROFILE, FOR SURFACE MOUNT APPLICATIONS GLASS PASSIVATED CHIP CONSTRUCTION


    Original     		1N4001 1N4007 250OC/10 SMA/DO-214AC EIA-RS-481) RS-481-A surface mount 1n4007 PDF

    diode 4007 details

    Abstract: 1N4007 SURFACE MOUNT Diode ttr
    Text: Surface Mount Silicon Rectifier Diode NRD Series FEATURES • • • • • • VOLTAGE: 50 TO 1000 VOLTS, CURRENT; 1.0 AMPERE CORRESPONDS TO 1N4001 THRU 1N4007 IN SURFACE MOUNT PACKAGE FLAT PACK - LOW PROFILE, FOR SURFACE MOUNT APPLICATIONS GLASS PASSIVATED CHIP CONSTRUCTION


    Original     		1N4001 1N4007 250OC/10 SMA/DO-214AC EIA-RS-481) 013mm) 50mVp-p diode 4007 details 1N4007 SURFACE MOUNT Diode ttr PDF

    OZ 9983

    Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
    Text: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —


    Original     		MBRB3030CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 OZ 9983 mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45 PDF

    Untitled

    Abstract: No abstract text available
    Text: Illl SEME 1N4001CSM LAB MECHANICAL DATA GENERAL PURPOSE SILICON RECTIFIER DIODE General Purpose Rectifier Diode In Hermetic Ceramic Surface Mount Package for High Reliability Applications 0.055 a = 1.02 ±0.10 max. (0.04 ± 0.004) SOT23 CERAMIC (CSM) Underside View


    OCR Scan     		1N4001CSM PDF

    1N4001CSM

    Abstract: No abstract text available
    Text: mi 1N4001 CSM SEME LAB MECHANICAL DATA GENERAL PURPOSE SILICON RECTIFIER DIODE General Purpose Rectifier Diode In Hermetic Ceramic Surface Mount Package for A= 1.02 ± 0.10 0.04 ± 0.004 1.40 (0.055) max. High Reliability Applications SOT23 CERAMIC (CSM)


    OCR Scan     		1N4001CSM 1N4001CSM PDF

    Untitled

    Abstract: No abstract text available
    Text: INI SEME 1N4001CSM LAB GENERAL PURPOSE SILICON RECTIFIER DIODE MECHANICAL DATA Dimensions in mm inches 0.51 ±0.10 (0.02 ± 0.004) (0 .0 1 2 ) rad. « So t °o +' +i u ^6 General Purpose Rectifier Diode J 1.91 ±0.10 (0.075 ±0.004) 3.05 ± 0.13 (0.12 ±0.005)


    OCR Scan     		1N4001CSM PDF

    Untitled

    Abstract: No abstract text available
    Text: . AL LE GR O K r.i' • • MICROSYSTEMS INC 13 D ■ 0SDM33fl D 0 0 3 7 Ô S Ô T -9 1 -0 1 PROCESS TRJ Process TRJ Silicon Rectifier Diode This silicon epitaxial diode is a 200V, 1.0A rectifier designed to m eet 1N4001, 1N 4002, and 1N 4003 specifications.


    OCR Scan     		0SDM33fl 1N4001, PDF

    4.7 B2 glass diodes

    Abstract: 1N400* series 1N4001 general diode purpose surface mount tic 41
    Text: CONTENTS ALPHA/NUMERIC LISTING OF PART N UM . 3 BRIDGE RECTIFIER AND DIODE . 4


    OCR Scan     		PDF

    Diode 1N4007 DO-7 Rectifier Diode

    Abstract: 1N40075 BYX/400 1N4007 RECTIFIER DIODE 4007 uf 1200 BAX12 BYW52 BYW53 BYW54 BYW55
    Text: Diodes Rectifier and Avalanche diodes Type BY 202 BY 203 BY 204 Maximum ratings Notes Characteristics V 4 8006 90 <300 £ 1 .0 200 £ 507) Contact protection diode 2 5 1000') 200 £100 £ 1 .2 1000 £ 3503) Fast rectifier diodes 3 5 1000') 300 £100 <1.2


    OCR Scan     		BAX12 F1000 1N4001 1N4002 1N4003 1N4004 1N4006 1N4007 Diode 1N4007 DO-7 Rectifier Diode 1N40075 BYX/400 1N4007 RECTIFIER DIODE 4007 uf 1200 BAX12 BYW52 BYW53 BYW54 BYW55 PDF

    1N4007 operating frequency

    Abstract: CHARACTERISTICS DIODE 1N4007 LN4007 diode ln4007 1N4007 RECTIFIER DIODE LN4004 diode DIODE 1N4001 surge current DIODE 1N4007 DIODE 1N4001 characteristics LN4004
    Text: SILICON RECTIFIER DIODE ÎA/IOO— 1000V 1N4001~1N4007 FEATURES • Miniature Size ° Low Forward Voltage Drop ° Low Reverse Leakage Current ° High Surge Capability « 52mm Inside Tape Spacing Package Available MAXIMUM R A T IN G S \ Voltage Rating type


    OCR Scan     		1N4001 1N4007 7to27 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007 operating frequency CHARACTERISTICS DIODE 1N4007 LN4007 diode ln4007 1N4007 RECTIFIER DIODE LN4004 diode DIODE 1N4001 surge current DIODE 1N4007 DIODE 1N4001 characteristics LN4004 PDF

    diode rectifier 1n4001

    Abstract: NIC Components 1N4007 CHARACTERISTICS DIODE 1N4007 rating NRD4007
    Text: Surface Mount Silicon Rectifier Diode NRD Series FEATURES VOLTAGE: 50 TO 1000 VOLTS, CURRENT; 1.0 AMPERE CORRESPONDS TO 1N4001 THRU 1N4007 IN SURFACE MOUNT PACKAGE FLAT PACK - LOW PROFILE, FOR SURFACE MOUNT APPLICATIONS GLASS PASSIVATED CHIP CONSTRUCTION HIGH TEMPERATURE SOLDERING 250°C/10 SECONDS


    OCR Scan     		1N4001 1N4007 EIA-RS-481) NRD4001 NRD4007) diode rectifier 1n4001 NIC Components 1N4007 CHARACTERISTICS DIODE 1N4007 rating NRD4007 PDF

    1N4007 operating frequency

    Abstract: IC 1N4007 DIODE 1N4001 RESISTANCE 1M4002 1N4001 SILICON diode 1N4007 diode frequency DIODE 1N4001 characteristics 1N4001 current rating diode 1N4001 CHARACTERISTICS DIODE 1N4007 rating
    Text: SILICON RECTIFIER DIODE ia 1N4001— 1N4007 / i o o ~ io o o v FEATURES ° Miniature Size ° Low Forward Voltage Drop ° Low Reverse Leakage Current 0 High Surge Capability ° 52mm Inside Tape Spacing Package Available MAXIMUM R A T IN G S "\^TYPE Voltage Rating


    OCR Scan     		1N4001-- 1N4007 1N4001 1M4002 1N4003 1N4004 1N4005 1N4006 1N4007 1N4001~ 1N4007 operating frequency IC 1N4007 DIODE 1N4001 RESISTANCE 1N4001 SILICON diode 1N4007 diode frequency DIODE 1N4001 characteristics current rating diode 1N4001 CHARACTERISTICS DIODE 1N4007 rating PDF