SEMISTACK - Thyristor
Abstract: w3c2 B6C Semikube semikron semikube semikron B6C SEMISTACK 323001 Semikube semipack skkt semikron gd-11 semikube
Text: SEMISTACK - Thyristor SEMIPACK Stack1 Circuit Id / Irms Vac V dc) Types B6C B2C W3C W3C2 159 128 123 123 upto 400V upto 400V upto 400V upto 400V SEMIKUBE Thyristor SEMIKUBE Thyristor SEMIKUBE Thyristor SEMIKUBE Thyristor Symbol Conditions Id (B6C) Tamb= 35°C, no overload
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10min
SEMISTACK - Thyristor
w3c2
B6C Semikube
semikron semikube
semikron B6C
SEMISTACK
323001
Semikube
semipack skkt
semikron gd-11 semikube
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Untitled
Abstract: No abstract text available
Text: IRGP4262DPbF IRGP4262D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 650V C G G IC = 40A, TC =100°C tSC 5.5µs, TJ max = 175°C G C VCE(ON) typ. = 1.7V @ IC = 24A C n-channel Applications G Gate E G IRGP4262D-EPbF
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IRGP4262DPbF
IRGP4262D-EPbF
O-247AD
O-247AC
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Untitled
Abstract: No abstract text available
Text: IRGP4266DPbF IRGP4266D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 650V G G C IC = 90A, TC =100°C tSC 5.5µs, TJ max = 175°C G C VCE(ON) typ. = 1.7V @ IC = 75A C G IRGP4266DPbF TO-247AC E n-channel
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IRGP4266DPbF
IRGP4266D-EPbF
IRGP4266DPbFÂ
247ACÂ
IRGP4266Dâ
247ADÂ
O-247AC
IRGP4266DPbF/IRGP4266D-EPbF
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IGBT gate driver welding
Abstract: IRGP4063D
Text: IRGP4063D1PbF IRGP4063D1-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C IC = 62A, TC =100°C G G tSC 5µs, TJ max = 175°C G VCE(ON) typ. = 1.65V @ IC = 48A E E n-channel Applica ons • Industrial Motor Drive
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IRGP4063D1PbF
IRGP4063D1-EPbF
IRGP4063D1PbF
IRGP4063D1EPbF
IRGP4063D1-EPbF
IRGP4063D1PbF/IRGP4063D1-EPbF
O-247AC
O-247AD
JESD47F)
IGBT gate driver welding
IRGP4063D
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Untitled
Abstract: No abstract text available
Text: IRGP4263DPbF IRGP4263D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 650V G G C IC = 60A, TC =100°C tSC 5.5µs, TJ max = 175°C G C VCE(ON) typ. = 1.7V @ IC = 48A C G IRGP4263DPbF TO-247AC E n-channel
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IRGP4263DPbF
IRGP4263D-EPbF
IRGP4263DPbFÂ
247ACÂ
IRGP4263Dâ
247ADÂ
IRGP4263DPbF/IRGP4263D-EPbF
O-247AC
JESD47F)
O-247AD
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Untitled
Abstract: No abstract text available
Text: IRGP4063D1PbF IRGP4063D1-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C IC = 60A, TC =100°C G G tSC 5µs, TJ max = 175°C G VCE(ON) typ. = 1.65V @ IC = 48A E E n-channel Applica ons • Industrial Motor Drive
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IRGP4063D1PbF
IRGP4063D1-EPbF
IRGP4063D1PbFÂ
O-247AC
O-247AD
RGP4063D1â
IRGP4063D1PbF/IRGP4063D1-EPbF
JESD47F)
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irgp4063d1
Abstract: IRGP4063D IRGP4063
Text: IRGP4063D1PbF IRGP4063D1-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C IC = 62A, TC =100°C G G tSC 5µs, TJ max = 175°C G VCE(ON) typ. = 1.65V @ IC = 48A E E n-channel Applica ons • Industrial Motor Drive
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IRGP4063D1PbF
IRGP4063D1-EPbF
IRGP4063D1PbF
IRGP4063D1EPbF
IRGP4063D1-EPbF
IRGP4063D1PbF/IRGP4063D1-EPbF
O-247AC
O-247AD
JESD47F)
irgp4063d1
IRGP4063D
IRGP4063
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0/b40 B2 RECTIFIER 400V
Abstract: IRGP4266 2.5/b40 B2 RECTIFIER 400V
Text: IRGP4266PbF IRGP4266-EPbF Insulated Gate Bipolar Transistor VCES = 650V C G G IC = 90A, TC =100°C tSC 5.5µs, TJ max = 175°C C G G VCE(ON) typ. = 1.7V @ IC = 75A E IRGP4266PbF TO-247AC n-channel Applications • Industrial Motor Drive Inverters
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IRGP4266PbF
IRGP4266-EPbF
IRGP4266-EPbF
O-247AD
O-247AC
O-247AC
0/b40 B2 RECTIFIER 400V
IRGP4266
2.5/b40 B2 RECTIFIER 400V
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Untitled
Abstract: No abstract text available
Text: IRGP4263PbF IRGP4263-EPbF Insulated Gate Bipolar Transistor C VCES = 650V G G IC = 60A, TC =100°C tSC 5.5µs, TJ max = 175°C G VCE(ON) typ. = 1.7V @ IC = 48A C G IRGP4263PbF E n-channel Applications • Industrial Motor Drive • Inverters
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IRGP4263PbF
IRGP4263-EPbF
IRGP4263PbFÂ
IRGP4263â
IRG7P4263PbF
IRG7P4263-EPbF
O-247AC
O-247AD
IRGP4263PbF/IRGP4263-EPbF
JESD47F)
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Untitled
Abstract: No abstract text available
Text: IRGP4263PbF IRGP4263-EPbF Insulated Gate Bipolar Transistor C VCES = 650V G G IC = 54A, TC =100°C tSC 5.5µs, TJ max = 175°C G VCE(ON) typ. = 1.7V @ IC = 48A C G IRGP4263PbF E n-channel Applications • Industrial Motor Drive • Inverters
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IRGP4263PbF
IRGP4263-EPbF
IRGP4263PbF
RGP4263EPbF
IRG7P4263PbF
IRG7P4263-EPbF
IRGP4263PbF/IRGP4263-EPbF
O-247AC
O-247AD
JESD47F)
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Untitled
Abstract: No abstract text available
Text: APTC60HM70RT3G CoolMOS : VDSS = 600V RDSon = 70mΩ max @ Tj = 25°C Full bridge + rectifier bridge CoolMOS Power module Application • Solar converter Features • CoolMOS™ - Ultra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated
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APTC60HM70RT3G
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Untitled
Abstract: No abstract text available
Text: APTC60HM70RT3G CoolMOS : VDSS = 600V RDSon = 70mΩ max @ Tj = 25°C Full bridge + rectifier bridge CoolMOS Power module Application • Solar converter Features • CoolMOS™ - Ultra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated
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APTC60HM70RT3G
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Untitled
Abstract: No abstract text available
Text: APTC60HM70RT3G CoolMOS : VDSS = 600V RDSon = 70m max @ Tj = 25°C Full bridge + rectifier bridge CoolMOS Power module Application • Solar converter Features CoolMOS™ - Ultra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated
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APTC60HM70RT3G
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Untitled
Abstract: No abstract text available
Text: APTCV60HM45RT3G Trench & Field Stop IGBT3 Q1, Q3: VCES = 600V ; IC = 50A @ Tc = 80°C Full bridge + rectifier bridge CoolMOS & Trench + Field Stop IGBT3 Power Module CoolMOS Q2, Q4: VDSS = 600V RDSon = 45mΩ max @ Tj = 25°C Application • Solar converter
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APTCV60HM45RT3G
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Untitled
Abstract: No abstract text available
Text: APTCV60HM70RT3G Trench & Field Stop IGBT3 Q1, Q3: VCES = 600V ; IC = 50A @ Tc = 80°C Full bridge + rectifier bridge CoolMOS & Trench + Field Stop IGBT3 Power Module CoolMOS Q2, Q4: VDSS = 600V RDSon = 70mΩ max @ Tj = 25°C Application • Solar converter
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APTCV60HM70RT3G
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Untitled
Abstract: No abstract text available
Text: APTCV60HM70RT3G Trench & Field Stop IGBT3 Q1, Q3: VCES = 600V ; IC = 50A @ Tc = 80°C Full bridge + rectifier bridge CoolMOS & Trench + Field Stop IGBT3 Power Module CoolMOS Q2, Q4: VDSS = 600V RDSon = 70mΩ max @ Tj = 25°C Application • Solar converter
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APTCV60HM70RT3G
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STTB1206G
Abstract: RECTIFIER 400V B2
Text: STTB1206G TURBOSWITCHTM ”B” ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS IF AV 12A VRRM 600V trr (typ) 50ns VF (max) 1.3V A K K FEATURES AND BENEFITS SPECIFIC TO THE FOLLOWING OPERATIONS: Snubbing or clamping, demagnetization and rectification.
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STTB1206G
STTB1206G
RECTIFIER 400V B2
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3A/b40 B2 RECTIFIER 400V
Abstract: PDR3G-13
Text: SPICE MODEL: PDR3G PDR3G 3A GLASS PASSIVATED RECTIFIER PowerDI ä5 NEW PRODUCT Features • · · · · · Glass Passivated Die Construction Low Leakage Current A D High Forward Surge Current Capability A2 b2 PowerDIä5 L1 Lead Free Finish, RoHS Compliant Note 1
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J-STD-020C
MIL-STD-202,
PDR3G-13
5000/Tape
com/datasheets/ap02007
DS30547
3A/b40 B2 RECTIFIER 400V
PDR3G-13
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Untitled
Abstract: No abstract text available
Text: APTCV60HM45RCT3G Trench & Field Stop IGBT3 Q1, Q3: VCES = 600V ; IC = 50A @ Tc = 80°C Full bridge + rectifier bridge CoolMOS & Trench + Field Stop IGBT3 Power Module CoolMOS Q2, Q4: VDSS = 600V RDSon = 45mΩ max @ Tj = 25°C Application • Solar converter
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APTCV60HM45RCT3G
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Untitled
Abstract: No abstract text available
Text: Rectifier miniver 1.0 Amp SM1 Case Ratings • ^ jj Type 250 pcs Forward Volt Trr @1.0A Recovery Time Max 100 pc: Max VRRM Max VRMS @ 1.0A 51-4001 51-4004 51-4007 50V 400V 1000V 35V 280V 700V 1.1V 1.1V 1.1V - 51-4936 51-4937 400V 600V 280V 420V 1.3V 1.3V 200nS
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200nS
SM4001
SM4004
SM4007
SM4936
SM4937
SM5817
SM5818
SM5819
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Untitled
Abstract: No abstract text available
Text: International Bag Rectifier HEXFET Power MOSFET • • • • • • 465S45S 001S2b2 b22 ■ INR PD-9.854 IRFIBE30G INTERNATIONAL R E C T I F I E R Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm Dynamic dv/dt Rating
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465S45S
001S2b2
IRFIBE30G
O-220
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Untitled
Abstract: No abstract text available
Text: H E 0 I 4055455 INTERNATIONAL □□□â?âQ □ | Data Sheet No. PD-9.586A RECTIFIER INTERNATIONAL RECTIFIER I « R T-39-15 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS IRFP 3 6 0 IR FP 3 B2 N-CHANNEL Product Summary 400 Volt, 0.20 Ohm HEXFET
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T-39-15
O-247AC
C-535
IRFP360,
IRFP362
SS452
Q0G07fl?
C-536
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DD1056
Abstract: DD1058
Text: LUCAS STABILITY ELEK LTD '8 1 C fll 00025 D • 5b07013 □□□□055 T ■ L U C B O \ 3 SILICO N D IFFU S ED JU N CTIO N R E C T IF IE R S 8 0 0 -1 3 5 0 V TRA N SIEN T R EV E R S E VO LTAGE DD10S6 DD1058 The D D 1056 and D D 1058 silicon diffused junction rectifiers have an axial lead
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00-1350V
DD10S6
DD1058
DD1056
DD1058
DO-15
2KM/380/BC
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Untitled
Abstract: No abstract text available
Text: I O R — INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER Diod^ Thyristor 2bE D • and Triac Junctions 4355452 0010280 1 ■ 0h 0$^ T^Q ^O S * POWER SEMICONDUCTOR JUNCTIONS THE APPLICATION AND CUSTOM ASSEMBLY OF POWER SEMICONDUCTOR JUNCTIONS INTRODUCTION
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