BMN-35H
Abstract: recoma magnet AN5020 AS5020 Tesla sensor Bomatec
Text: AN5020_3 MAGNETIC PROPERTIES REQUIRED FOR USE WITH THE AS5020 APPLICATION NOTE Introduction The AS5020 6-bit Absolute Angular Position Encoder device provides the positional information of a simple magnetic source placed close to it. The AS5020 device provides for a
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AN5020
AS5020
AS5020
BMN-35H
recoma
magnet
Tesla sensor
Bomatec
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Untitled
Abstract: No abstract text available
Text: C8051F912-GDI Tested Single/Dual Battery, 0.9–3.6 V, 16 kB Flash, SmaRTClock, 12/10-Bit ADC MCU Die in Wafer Form High-Speed 8051 C Core - Pipelined instruction architecture; executes 70% of Ultra-Low Power - 160 µA/MHz in active mode 24.5 MHz clock
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C8051F912-GDI
12/10-Bit
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Untitled
Abstract: No abstract text available
Text: C8051F912-GDI Tested Single/Dual Battery, 0.9–3.6 V, 16 kB Flash, SmaRTClock, 12/10-Bit ADC MCU Die in Wafer Form High-Speed 8051 C Core - Pipelined instruction architecture; executes 70% of Ultra-Low Power - 160 µA/MHz in active mode 24.5 MHz clock
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Original
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C8051F912-GDI
12/10-Bit
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PDF
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Untitled
Abstract: No abstract text available
Text: C8051F912-GDI Tested Single/Dual Battery, 0.9–3.6 V, 16 kB Flash, SmaRTClock, 12/10-Bit ADC MCU Die in Wafer Form Ultra-Low Power - 160 µA/MHz in active mode 24.5 MHz clock - 2 µs wake-up time (two-cell mode) - 10 nA sleep mode with memory retention
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C8051F912-GDI
12/10-Bit
10-Bit
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M5M5256
Abstract: MH*08TNA MSM5256 MH25708TNA-10L MH25708TNA-85L m5m5256 25
Text: M IT S U B IS H I LSIs MH25708TNA-85L,-10L,-12L,-15L/ MH25708TNA-85H,-10H,-12H,-15H 2 0 9 7 1 5 2 - B I T 2 6 2 1 4 4 - W O R D B Y 8 -B IT C M O S S T A T IC R A M M O D U L E DESCRIPTION The M H 25708TN A is a 2097152-bits CMOS static RAM module organized as 262144-words by 8-bits. It consists
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MH25708TN
262144-WORD
MH25708TNA
2097152-bits
262144-words
32-pin
MH25708TNA-85L
MH25708TNA-10L
MH25708TNA-I2L
M5M5256
MH*08TNA
MSM5256
m5m5256 25
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M5K4164
Abstract: M5K4164ANL12 M5K4164ANL-12 recoma M5K4164ANL-15
Text: M IT S U B IS H I LSIs M 5 K 4 164ANL-12, -15 6 5 5 3 6 -B IT 6 5 536-W O R D BY 1-B IT DYNAMIC RAM D ESCRIPTIO N PIN C O N F IG U R A T IO N (TOP VIEW ) This is a fa m ily o f 65 5 3 6 -w o rd b y 1 -b it d y n a m ic RAM s, fa b ric a te d w ith th e high p e rform ance N -channel silicongate
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M5K4164ANL-12,
536-BIT
536-WORD
16-pin
M5K4164ANL
M5K4164
M5K4164ANL12
M5K4164ANL-12
recoma
M5K4164ANL-15
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741C op amp
Abstract: samco UGN3501 ates 2n3055 ugn3501 equivalent GN3503 40669 Triac 3503 allegro hall effect Magnetic Tachometer with ug*3503 UGN3120U
Text: APPLICATIONS INFORMATION HALL EFFECT IC APPLICATIONS GUIDE Allegro Microsystems uses the latest bipolar integrated circuit technology in combination with the century-old Hall effect to produce Hall effect ICs. These are contactless, magnetically activated switches
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to/732-2822
225-4N
741C op amp
samco
UGN3501
ates 2n3055
ugn3501 equivalent
GN3503
40669 Triac
3503 allegro hall effect
Magnetic Tachometer with ug*3503
UGN3120U
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