TOP SIDE MARKING OF MICRON
Abstract: No abstract text available
Text: ADVANCE 256Mb/288Mb: 16 MEG x 16/18 RDRAM RAMBUS DRAM MT6V16M16 - 512K x 16 x 32 banks MT6V16M18 - 512K x 18 x 32 banks For the latest data sheet, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES 64-PIN FBGA TOP VIEW
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256Mb/288Mb:
18-bit)
MT6V16M16F2-3B
MT6V16M16F2-3C
MT6V16M16F2-4B
MT6V16M16F2-4C
MT6V16M16F2-4D
MT6V16M18F2-3B
MT6V16M18F2-3C
MT6V16M18F2-4B
TOP SIDE MARKING OF MICRON
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TOP SIDE MARKING OF MICRON
Abstract: RDRAM Clock
Text: ADVANCE 256Mb/288Mb: 16 MEG x 16/18 RDRAM RAMBUS DRAM MT6V16M16 - 512K x 16 x 32 banks MT6V16M18 - 512K x 18 x 32 banks For the latest data sheet, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES 64-PIN FBGA TOP VIEW
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PDF
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256Mb/288Mb:
18-bit)
MT6V16M16F2-3B
MT6V16M16F2-3C
MT6V16M16F2-4B
MT6V16M16F2-4C
MT6V16M16F2-4D
MT6V16M18F2-3B
MT6V16M18F2-3C
MT6V16M18F2-4B
TOP SIDE MARKING OF MICRON
RDRAM Clock
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TOP SIDE MARKING OF MICRON
Abstract: RDRAM cross reference
Text: ADVANCE 256Mb/288Mb: 16 MEG x 16/18 RDRAM RAMBUS DRAM MT6V16M16 - 512K x 16 x 32 banks MT6V16M18 - 512K x 18 x 32 banks For the latest data sheet, please refer to the Micron Web site: www.micronsemi.com/datasheets/datasheet.html FEATURES 84-PIN FBGA TOP VIEW
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256Mb/288Mb:
18-bit)
MT6V16M16F2-3M
MT6V16M16F2-3B
MT6V16M16F2-3C
MT6V16M16F2-4C
MT6V16M16F2-4D
MT6V16M18F2-3M
MT6V16M18F2-3B
MT6V16M18F2-3C
TOP SIDE MARKING OF MICRON
RDRAM cross reference
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Untitled
Abstract: No abstract text available
Text: ADVANCE 128Mb/144Mb: 8 MEG x 16/18 RDRAM RAMBUS DRAM MT6V8M16 - 256K x 16 x 32 banks MT6V8M18 - 256K x 18 x 32 banks For the latest data sheet, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES FBGA Top View • High-speed 300 MHz, 356 MHz, and 400 MHz
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128Mb/144Mb:
MT6V8M16
MT6V8M18
18-bit)
MT6V8M18F-3B
MT6V8M18F-3C
MT6V8M18F-4C
144MRDRAM
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TOP SIDE MARKING OF MICRON
Abstract: 84 FBGA 84-PIN MT6V16M16F2-3C MT6V16M16F2-3M MT6V16M18F2-3M RDRAM FBGA 84 MICRON fBGA package code
Text: ADVANCE 256Mb/288Mb: 16 MEG x 16/18 RDRAM RAMBUS DRAM MT6V16M16 - 512K x 16 x 32 banks MT6V16M18 - 512K x 18 x 32 banks For the latest data sheet, please refer to the Micron Web site: www.micronsemi.com/datasheets/datasheet.html FEATURES 84-PIN FBGA TOP VIEW
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256Mb/288Mb:
MT6V16M16
MT6V16M18
84-PIN
18-bit)
256MRDRAM
TOP SIDE MARKING OF MICRON
84 FBGA
MT6V16M16F2-3C
MT6V16M16F2-3M
MT6V16M18F2-3M
RDRAM
FBGA 84
MICRON fBGA package code
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TOP SIDE MARKING OF MICRON
Abstract: MT6V8M16F-4C MT6V8M16F1-3B MT6V8M16F1-3M MT6V8M16F1-4C MT6V8M18F1-3B MT6V8M18F1-3M MT6V8M18F1-4C ctm 512
Text: ADVANCE 128Mb/144Mb: 8 MEG x 16/18 RDRAM RAMBUS DRAM MT6V8M16 - 256K x 16 x 32 banks MT6V8M18 - 256K x 18 x 32 banks For the latest data sheet, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES FBGA Top View • High-speed 300 MHz, 356 MHz, and 400 MHz
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Original
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PDF
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128Mb/144Mb:
MT6V8M16
MT6V8M18
18-bit)
MT6V8M18F-3B
MT6V8M18F-3C
MT6V8M18F-4C
144MRDRAM
TOP SIDE MARKING OF MICRON
MT6V8M16F-4C
MT6V8M16F1-3B
MT6V8M16F1-3M
MT6V8M16F1-4C
MT6V8M18F1-3B
MT6V8M18F1-3M
MT6V8M18F1-4C
ctm 512
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TOP SIDE MARKING OF MICRON
Abstract: dd marking MT6V8M16F-3B MT6V8M16F-4C RDRAM Clock MICRON Cross Reference MT6V8M16F-4D
Text: ADVANCE 128Mb/144Mb: 8 MEG x 16/18 RDRAM RAMBUS DRAM MT6V8M16 - 256K x 16 x 32 banks MT6V8M18 - 256K x 18 x 32 banks For the latest data sheet, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES 54-Pin FBGA Top View
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128Mb/144Mb:
MT6V8M16
MT6V8M18
54-Pin
18-bit)
144MRDRAM
TOP SIDE MARKING OF MICRON
dd marking
MT6V8M16F-3B
MT6V8M16F-4C
RDRAM Clock
MICRON Cross Reference
MT6V8M16F-4D
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RDRAM SOP
Abstract: RDRAM cross reference direct rdram rac
Text: VIS VG5612816AU VG5614418AU 128Mb/144Mb Direct Rambus Dynamic RAM Preliminary Current and Temperature Control samples the last calibration packet and adjusts its IOL current value. Figure 50 shows an example of a transaction which performs current control calibration. It is necessary to perform this
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VG5612816AU
VG5614418AU
128Mb/144Mb
1G5-0159
RDRAM SOP
RDRAM cross reference
direct rdram rac
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GMII layout
Abstract: TNETX4090 schematic diagram clock schematic SPWA025 TNETX4090 macronix rambus Concurrent RDRAM
Text: Design and Layout Guidelines for the TNETX4090 Device APPLICATION REPORT: SPWA025A Worldwide Broadband Access Group, Enterprise Products May 1998 IMPORTANT NOTICE Texas Instruments TI reserves the right to make changes to its products or to discontinue any
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TNETX4090
SPWA025A
GMII layout
TNETX4090 schematic diagram
clock schematic
SPWA025
macronix rambus
Concurrent RDRAM
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SPU3
Abstract: 33T6 direct rdram rac transistor b1011 rambus RAC 2B011
Text: Preliminary Information Direct Rambus Memory Controller RMC2 Overview Logical constraints are tracked by the Protocol Module (PM), which receives transaction requests from the Bus Interface Unit, and requests all the Row and Column packets necessary to implement the requested transaction, in the correct logical order. Timing and retire
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RDRAM cross reference
Abstract: No abstract text available
Text: MITSUBISHI LSIs Preliminary Spec. Some contents are subject to change without notice. MH32/64R18BUP-408,458,536 DESCRIPTION The MH32/64R18BUP is the Direct Rambus RIMM™ module. This consists of eight/sixteen industry 4Mx18 Direct Rambus DRAM Direct RDRAM™ in M-CSP and one industory standard
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MH32/64R18BUP-408
MH32/64R18BUP
4Mx18
600MHz
800MHz
MIT-DS-0278-0
RDRAM cross reference
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rop 101
Abstract: SPT-042
Text: Direct RDRAM 288-Mbit 512kx18x32s Overview The INFINEON Direct RDRAM is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high bandwidth and low latency are required.
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288-Mbit
512kx18x32s)
288-Mbit
bandw32s)
TEST77
TEST78
rop 101
SPT-042
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Untitled
Abstract: No abstract text available
Text: KM416RD8AC D /KM418RD8AC(D) Preliminary Direct RDRAM 128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM Revision 1.0 July 1999 Page -2 Rev. 1.0 Jul. 1999 KM416RD8AC(D)/KM418RD8AC(D) Preliminary Direct RDRAM™ Revision History Version 1.0 (July 1999) - Preliminary
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KM416RD8AC
/KM418RD8AC
128/144Mbit
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da53
Abstract: 144MD-50-711 144MD-53-600 128MD-40-800 128MD-50-711 128MD-53-600 144MD-40-800
Text: Direct RDRAM RAMBUS 128/144-Mbit 256Kx16/18x32s Preliminary Information Overview The Rambus Direct RDRAM™ is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application
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128/144-Mbit
256Kx16/18x32s)
128/144-Mbit
600MHz
800MHz
DL0059
DL0059
da53
144MD-50-711
144MD-53-600
128MD-40-800
128MD-50-711
128MD-53-600
144MD-40-800
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da53
Abstract: 128MD-40-800 128MD-50-711 128MD-53-600 144MD-40-800 144MD-50-711 144MD-53-600 DB25 Parallel connector XOP1 144MD-45-800
Text: Direct RDRAM RAMBUS 128/144-Mbit 256Kx16/18x32s Preliminary Information Overview The Rambus Direct RDRAM™ is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application
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128/144-Mbit
256Kx16/18x32s)
128/144-Mbit
600MHz
800MHz
DL0059
DL0059
da53
128MD-40-800
128MD-50-711
128MD-53-600
144MD-40-800
144MD-50-711
144MD-53-600
DB25 Parallel connector
XOP1
144MD-45-800
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da53
Abstract: DB26 DL0054 ycl dc 101
Text: 1066 MHz RDRAMâ 256/288 Mb 4Mx16/18x4i Advance Information Overview • The Rambus DRAM (RDRAMâ) device is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other
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4Mx16/18x4i)
DL-0119-010
da53
DB26
DL0054
ycl dc 101
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Untitled
Abstract: No abstract text available
Text: 1066 MHz RDRAM£ 256/288 Mb 512Kx16/18x32s Advance Information Overview The RDRAM£ device is a general purpose highperformance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high
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512Kx16/18x32s)
600MHz
DL-0118-050
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da53
Abstract: DB26
Text: 800/1066 MHz RDRAM£ 256/288 Mb 512Kx16/18x32s Advance Information Overview The RDRAM£ device is a general purpose highperformance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high
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512Kx16/18x32s)
600MHz
DL-0118-06
da53
DB26
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Untitled
Abstract: No abstract text available
Text: Preliminary Direct RDRAM K4R271669A for Short Channel 128Mbit RDRAM 256K x 16 bit x 2*16 Dependent Banks Direct RDRAMTM Short Channel Revision 0.951 May 2000 Page -2 Rev. 0.951 May 2000 Preliminary Direct RDRAM™ K4R271669A for Short Channel Revision History
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K4R271669A
128Mbit
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db44 pinout
Abstract: diode t40 72M-BIT T45 to DB9 DB26 HYB25R64160C-653 HYB25R64160C-840 HYB25R64160C-845 HYB25R72180C-653 HYB25R72180C-840
Text: Direct RDRAM 64/72-Mbit 256Kx16/18x16d RAMBUS ADVANCE INFORMATION Overview n Uses Rambus Signaling Level (RSL) for up to 800MHz operation Preliminary Data The Rambus Direct RDRAM™ is a general purpose high-performance memory device suitable for use in a
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64/72-Mbit
256Kx16/18x16d)
800MHz
64/72-Mbit
600MHz
db44 pinout
diode t40
72M-BIT
T45 to DB9
DB26
HYB25R64160C-653
HYB25R64160C-840
HYB25R64160C-845
HYB25R72180C-653
HYB25R72180C-840
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RDRAM Clock
Abstract: No abstract text available
Text: 1066 MHz RDRAM 256/288 Mb 4Mx16/18x4i Advance Information Overview The RDRAM device is a general purpose highperformance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high
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DL-0119-030
RDRAM Clock
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TOP SIDE MARKING OF MICRON
Abstract: ctm 512
Text: ADVANCE |V |C R O N n I TECHNOLOGY, 128Mb/144Mb: 8 MEG x 16/18 RDRAM INC. R A M R I IQ rtM IV ID U O U MT6V8M16 - 256K x 16 x 32 banks MT6V8M18 - 256K x 1 8 x 3 2 banks [ 5 A IVyi I 1 IVI For the latest data sheet, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html
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OCR Scan
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PDF
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128Mb/144Mb:
MT6V8M16
MT6V8M18
18-bit)
TOP SIDE MARKING OF MICRON
ctm 512
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs Some contents are subject to change without notice. MH32/64R18BUP-408,458,536 DESCRIPTION The M H 32/64R 18B U P is the Direct Rambus RIM M ™ module. This consists of eight/sixteen industry 4M x18 Direct Rambus DRAM Direct R D R A M ™ ¡n M -C S P and one industory standard
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OCR Scan
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PDF
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MH32/64R18BUP-408
MH32/64R18BUP
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs Preliminary S peeD Some contents are subject to change without notice. MH32/64R18BUP-408,458,536 DESCRIPTION The MH32/64R18BUP is the Direct R am bus R IM M ™ module. This consists of eight/sixteen industry 4Mx18 Direct Rambus DRAM Direct
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OCR Scan
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PDF
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MH32/64R18BUP-408
MH32/64R18BUP
4Mx18
600MHz
800MHz
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