2SK2500
Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861
Text: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose
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RD5.6S
Abstract: 610C 3420B
Text: - 250 - y X *1 £E B S % tt P •W (raA) RD5.Î J S RD5.1K RD5. IL RD5.IM RD5.ÎMW B l QQ B l b i B1 min typ 400 400 SOO 200 200 4. 84 4.84 4. 85 4.8 4. 84 5.1 5.1 4. 8 4.82 4.81 4.82 5.3 5. 1 Vz <D X SÜÆ Vz (V) lz max Iz <mA) Zzmax (fi) M it I z(mA) 5. 37
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40iis-eÂ
i15-0Â
25MIN
RD5.6S
610C
3420B
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orange brown green zener diode
Abstract: red red green zener diode WHITE BROWN YELLOW ZENER DIODE RD12L zener diode B2 brown brown green zener diode RD5.1L RD2.2L RD6.2L 8.2 B2 ZENER
Text: ZENER DIODES RD2.0L to RD39L SILICON EPITAXIAL ZENER DIODES Lead less Type DESCRIPTION PACKAGE DIMENSIONS The RD2.0L to RD39L Series are zener diodes in Lead- Unit: mm iess Type package w ith DHD (Double Heatsink Diode) construction having allowed power dissipation o f 500
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RD39L
RD39L
orange brown green zener diode
red red green zener diode
WHITE BROWN YELLOW ZENER DIODE
RD12L
zener diode B2
brown brown green zener diode
RD5.1L
RD2.2L
RD6.2L
8.2 B2 ZENER
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3420B
Abstract: RD5.6S 610C RD6.8E
Text: - 250 - y X *1 £E B S % tt P •W (raA) RD5.Î J S RD5.1K RD5. IL RD5.IM RD5.ÎMW B l QQ B l b i B1 min 4. 84 4.84 4. 85 4.8 4. 84 5.1 5.1 4. 8 4.82 4.81 4.82 5.3 5. 1 RD5.IP RD5. IS RD5.1UJ RD5.1ÜM RD5. 6E B1 B l B l am 1W 200 150 150 500 RD5. 6BS RD5.6F
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40iis-eÂ
sc-11
-28UNF-2ATÂ
i042U
SC-11U
27MIN
27M1N
27MIN
73MIN
3420B
RD5.6S
610C
RD6.8E
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U 420B
Abstract: RD5.6S 610C RD5D
Text: - 250 - y X *1 £E B S % tt P •W (raA) RD5.Î J S RD5.1K RD5. IL RD5.IM RD5.ÎMW B l QQ B l b i B1 min 4. 84 4.84 4. 85 4.8 4. 84 5.1 5.1 4. 8 4.82 4.81 4.82 5.3 5. 1 RD5.IP RD5. IS RD5.1UJ RD5.1ÜM RD5. 6E B1 B l B l am 1W 200 150 150 500 RD5. 6BS RD5.6F
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40iis-eÂ
SiS40insT-
40nist-aiJS,
iS40ns
U 420B
RD5.6S
610C
RD5D
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RD5.6S
Abstract: RD5D 610C
Text: - 250- y X *1 £E B S tt % P •W (raA) RD5.Î J S RD5.1K RD5. IL RD5.IM RD5.ÎMW B l QQ B l min typ Vz <D X SÜÆ Vz (V) lz max Iz <mA) Zzmax (fi) M it I z(mA) 4. 84 4.84 4. 85 4.8 4. 84 5.1 5.1 B1 400 400 SOO 200 200 5. 37 5.37 5. 35 5. 4 5.37 5 5 5 5
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40iis-eÂ
avz00
SiS40insT-
40nist-aiJS,
iS40ns
RD5.6S
RD5D
610C
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RD5.6S
Abstract: 610C ic um 3481
Text: - 250 - y X *1 £E B S % tt P •W (raA) RD5.Î J S RD5.1K RD5. IL RD5.IM RD5.ÎMW B l QQ B l b i B1 min 4. 84 4.84 4. 85 4.8 4. 84 5.1 5.1 4. 8 4.82 4.81 4.82 5.3 5. 1 RD5.IP RD5. IS RD5.1UJ RD5.1ÜM RD5. 6E B1 B l B l am 1W 200 150 150 500 RD5. 6BS RD5.6F
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40iis-eÂ
RD5.6S
610C
ic um 3481
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RD5D
Abstract: RD5A 12123 RD5.6S 610C
Text: - 250- y X *1 £E B S tt % P •W (raA) RD5.Î J S RD5.1K RD5. IL RD5.IM RD5.ÎMW B l QQ B l min typ Vz <D X SÜÆ Vz (V) lz max Iz <mA) Zzmax (fi) M it I z(mA) 4. 84 4.84 4. 85 4.8 4. 84 5.1 5.1 B1 400 400 SOO 200 200 5. 37 5.37 5. 35 5. 4 5.37 5 5 5 5
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40iis-eÂ
40nisT-aiJS,
iS40ns
--18--j
E1233
RD5D
RD5A
12123
RD5.6S
610C
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RD5.6S
Abstract: 610C BS 531 vztiasS40ns
Text: - 250 - y X *1 £E B S % tt P •W (raA) RD5.Î J S RD5.1K RD5. IL RD5.IM RD5.ÎMW B l QQ B l b i B1 min 4. 84 4.84 4. 85 4.8 4. 84 5.1 5.1 4. 8 4.82 4.81 4.82 5.3 5. 1 RD5.IP RD5. IS RD5.1UJ RD5.1ÜM RD5. 6E B1 B l B l am 1W 200 150 150 500 RD5. 6BS RD5.6F
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40iis-eÂ
SiS40insT-
40nisT-aiJS,
iS40ns
RD5.6S
610C
BS 531
vztiasS40ns
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