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    RD12MVP1 Search Results

    RD12MVP1 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    RD12MVP1 Mitsubishi Silicon MOSFET Power Transistor, 175MHz, 10W Original PDF

    RD12MVP1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    RD12MVP1

    Abstract: RD12MVS1 2040D
    Text: APPLICATION NOTE Silicon RF Power Semiconductors Document No. AN-VHF-034-B Date : 10th Feb. 2006 Rev. date : 22 th Jun. 2010 Prepared: E.Akiyama S.Kametani Confirmed: T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RD12MVP1 single-amplifier RF characteristics data at f=135-175MHz,Vdd=7.2V


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    PDF AN-VHF-034-B RD12MVP1 135-175MHz RD12MVP1: 059XA-G" 175MHz: 135/155/17meter) RD12MVS1 2040D

    DIODE GP 704

    Abstract: RD12MVP1 micro strip line
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD12MVP1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 10W a 7.0+/-0.2 0.2+/-0.05 0.65+/-0.2 RD12MVP1 is a MOS FET type transistor specifically designed for VHF RF power


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    PDF RD12MVP1 175MHz, RD12MVP1 175MHz 175MHz) DIODE GP 704 micro strip line

    RD12MVP1

    Abstract: RD12MVS1 mitsubishi 5218 5253 1007
    Text: APPLICATION NOTE RF POWER SEMICONDUCTORS Document No. AN-VHF-034-A Date : 10th Feb. 2006 Rev.date : 7th Jan. 2010 Prepared: E.Akiyama S.Kametani Confirmed: T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RD12MVP1 135-175MHz RF characteristics data


    Original
    PDF AN-VHF-034-A RD12MVP1 135-175MHz RD12MVP1: 059XA-G" 175MHz: 135/155/175MHz: RD12MVS1 mitsubishi 5218 5253 1007

    transistor D 1666

    Abstract: transistor 801 diagrams
    Text: < Silicon RF Power MOS FET Discrete > RD12MVP1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 10W (a) OUTLINE DRAWING RD12MVP1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications. (b) 7.0+/-0.2 0.2+/-0.05


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    PDF RD12MVP1 175MHz, RD12MVP1 175MHz 175MHz) Oct2011 transistor D 1666 transistor 801 diagrams

    RD12MVP1

    Abstract: top marking mitsubishi rd series
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD12MVP1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 10W a 7.0+/-0.2 0.2+/-0.05 0.65+/-0.2 RD12MVP1 is a MOS FET type transistor specifically designed for VHF RF power


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    PDF RD12MVP1 175MHz, RD12MVP1 175MHz 175MHz) top marking mitsubishi rd series

    DIODE GP 704

    Abstract: GP 724 DIODE
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD12MVP1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 10W a 7.0+/-0.2 0.2+/-0.05 0.65+/-0.2 RD12MVP1 is a MOS FET type transistor specifically designed for VHF RF power


    Original
    PDF RD12MVP1 175MHz, RD12MVP1 175MHz 175MHz) DIODE GP 704 GP 724 DIODE

    RD12MVP1

    Abstract: RD12MVS1
    Text: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document No. AN-VHF-034 Date: 10th Feb. 2006 Prepared: E.Akiyama S.Kametani Confirmed: SUBJECT: T.Ohkawa RD12MVP1 135-175MHz RF characteristics data SUMMARY: This application note shows the RF characteristics Frequency Characteristics, Pin vs. Pout


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    PDF AN-VHF-034 RD12MVP1 135-175MHz RD12MVP1: 059XA-G" 175MHz: 135/155/175MHz: RD12MVS1

    Untitled

    Abstract: No abstract text available
    Text: < Silicon RF Power MOS FET Discrete > RD12MVP1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 10W (a) OUTLINE DRAWING RD12MVP1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications. (b) (b) 7.0+/-0.2 0.2+/-0.05


    Original
    PDF RD12MVP1 175MHz, RD12MVP1 175MHz 175MHz)

    DIODE GP 704

    Abstract: transistor mosfet 536 RD12MVP1 VGS-75 0452 mosfet
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD12MVP1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 10W a (b) RD12MVP1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.


    Original
    PDF RD12MVP1 175MHz, RD12MVP1 175MHz 175MHz) DIODE GP 704 transistor mosfet 536 VGS-75 0452 mosfet

    RD100HHF1

    Abstract: RD70HVF1 rd16hhf1 RD15HVF1 RD06HVF1 RD16HHF1 application notes RD70HVF RD70HHF1 RD01MUS2 RD06HHF1
    Text: SiRF Device Family for RF Power Amplification General Catalog Better Performance For Radio Communication Network Professional Mobile Radio Marine Radio Telematics AMPS/GSM Features Full Line up Frequency : 30-900MHz Output Power : 0.3-100W Operation Voltage : 7.2-12.5V


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    PDF 30-900MHz H-CR624-E KI-0612 RD100HHF1 RD70HVF1 rd16hhf1 RD15HVF1 RD06HVF1 RD16HHF1 application notes RD70HVF RD70HHF1 RD01MUS2 RD06HHF1