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    RCE MARKING Search Results

    RCE MARKING Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    OP249GSZ Analog Devices SO-8 MARKED AS \\OP249G\\ Visit Analog Devices Buy
    DAC08ESZ-REEL Analog Devices SO-16 MARKED AS \\DAC08E\\ Visit Analog Devices Buy
    REF02CSZ Analog Devices SO-8 MARKED AS \\REF02C\\ Visit Analog Devices Buy
    DAC08ESZ Analog Devices SO-16 MARKED AS \\DAC08E\\ Visit Analog Devices Buy
    REF03GSZ Analog Devices SO-8 MARKED AS \\REF03G\\ Visit Analog Devices Buy
    OP221GSZ Analog Devices SO-8 MARKED AS \\OP221G\\ Visit Analog Devices Buy

    RCE MARKING Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    design ideas

    Abstract: FMMT591A 91A SOT23 FMMT491A TS16949 ZETEX complementary transistor PRODUCT LINE
    Text: A Product Line of Diodes Incorporated FMMT591A SOT23 PNP silicon planar medium power transistor Features Low equivalent on resistance RCE sat = 350m⍀ at 1A Part Marking Detail -91A Complementary type -FMMT491A Absolute maximum ratings. Parameter Symbol


    Original     		PDF FMMT591A -FMMT491A D-81541 TX75248, design ideas FMMT591A 91A SOT23 FMMT491A TS16949 ZETEX complementary transistor PRODUCT LINE

    FZT491A

    Abstract: FZT591A transistor marking 2A H DSA003675
    Text: SOT223 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR FZT591A ISSUE 1 - DECEMBER 2001 FEATURES Low equivalent on resistance RCE sat = 350m PART MARKING DETAIL COMPLEMENTARY TYPE - FZT591A C at 1A FZT591A FZT491A E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL


    Original     		PDF OT223 FZT591A FZT491A -100mA -500mA -20mA* -100mA* -50mA* FZT491A FZT591A transistor marking 2A H DSA003675

    91A SOT23

    Abstract: design ideas FMMT591 FMMT491A TS16949
    Text: A Product Line of Diodes Incorporated FMMT591 SOT23 PNP silicon planar medium power transistor Features Low equivalent on resistance RCE sat = 350m⍀ at 1A Part Marking Detail -91A Complementary type -FMMT491A Absolute maximum ratings. Parameter Symbol VCBO


    Original     		PDF FMMT591 -FMMT491A D-81541 TX75248, 91A SOT23 design ideas FMMT591 FMMT491A TS16949

    up2518

    Abstract: UP2518G-AE3-R
    Text: UNISONIC TECHNOLOGIES CO., LTD UP2518 Preliminary PNP SILICON TRANSISTOR LOW VCE SAT PNP SILICON POWER TRANSISTORS „ FEATURES * Extremely low collector-emitter saturation voltage VCE(SAT) and corresponding extremely low equivalent on-resistance RCE(SAT)


    Original     		PDF UP2518 UP2518L UP2518G UP2518L-AE3-R UP2518-AE3-R UP2518G-AE3-R OT-23 QW-R206-083 up2518 UP2518G-AE3-R

    up2518

    Abstract: UP2518-AE3-6-R UP2518L-AE3-6-R
    Text: UNISONIC TECHNOLOGIES CO., LTD UP2518 PNP EPITAXIAL SILICON TRANSISTOR LOW VCE SAT PNP SILICON POWER TRANSISTORS FEATURES 3 * Extremely low collector-emitter saturation voltage VCE(SAT) and corresponding extremely low equivalent on-resistance RCE(SAT) (97mΩ at 1.5A)


    Original     		PDF UP2518 OT-23 UP2518L UP2518-AE3-6-R UP2518L-AE3-6-R QW-R206-083 up2518 UP2518-AE3-6-R UP2518L-AE3-6-R

    ZXTN07012EFF

    Abstract: ZXTP07012EFF ZXTP07012EFFTA
    Text: ZXTP07012EFF 12V, SOT23F, PNP medium power transistor Summary; BVCEO > -12V IC cont = -4A VCE(sat) < -75mV @ 1A RCE(sat) = 50m⍀ PD = 1.5W Complementary part number ZXTN07012EFF Description C This low voltage PNP transistor has been designed for applications


    Original     		PDF ZXTP07012EFF OT23F, -75mV ZXTN07012EFF OT23F OT23F ZXTN07012EFF ZXTP07012EFF ZXTP07012EFFTA

    Untitled

    Abstract: No abstract text available
    Text: ZXTP07012EFF 12V, SOT23F, PNP medium power transistor Summary; BVCEO > -12V IC cont = -4A VCE(sat) < -75mV @ 1A RCE(sat) = 50m⍀ PD = 1.5W Complementary part number ZXTN07012EFF Description C This low voltage PNP transistor has been designed for applications


    Original     		PDF ZXTP07012EFF OT23F, -75mV ZXTN07012EFF OT23F OT23F D-81541

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type Product specification FCX718 Features 2W power dissipation. 6A peak pulse current. Excellent HFE characteristics up to 6 Amps. Extremely low saturation voltage E.g. 16mv Typ. Extremely low equivalent on-resistance. RCE sat 96mÙ at 2.5A.


    Original     		PDF FCX718 -50mA -10mA -50mA, 100MHz

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type Product specification FCX1149A Features 2W power dissipation. 20A peak pulse current. Excellent HFE characteristics up to 10 Amps. Extremely low saturation voltage E.g. 45mv Typ. Extremely low equivalent on-resistance. RCE sat 67mÙ at 3A.


    Original     		PDF FCX1149A -100mA -10mA -50mA, 50MHz -40mA

    ZXTP2025

    Abstract: zxtp2025f marking 12W SOT23 zxtp2025fta marking 312 SOT23 zetex ZXTN2031F ZXTN2031 mosfet marking 12W 12W MARKING sot23
    Text: ZXTP2025F 50V, SOT23, PNP medium power transistor Summary V BR CEO > -50V IC(cont) = -5A RCE(sat) = 30m⍀ typical VCE(sat) < - 60mV @ -1A PD = 1.2W Complementary part number: ZXTN2031F Description Advanced process capability and package design have been used to


    Original     		PDF ZXTP2025F ZXTN2031F ZXTP2025 zxtp2025f marking 12W SOT23 zxtp2025fta marking 312 SOT23 zetex ZXTN2031F ZXTN2031 mosfet marking 12W 12W MARKING sot23

    ZXTN25012EFH

    Abstract: ZXTP25012EFH TS16949 ZXTP25012EFHTA
    Text: ZXTP25012EFH 12V, SOT23, PNP medium power transistor Summary BVCEO > -12V hFE > 500 IC cont = -4A RCE(sat) = 40m⍀ VCE(sat) < -65mV @ 1A PD = 1.25W Complementary part number ZXTN25012EFH Description C Advanced process capability and package design have been used to


    Original     		PDF ZXTP25012EFH -65mV ZXTN25012EFH D-81541 ZXTN25012EFH ZXTP25012EFH TS16949 ZXTP25012EFHTA

    zxtp25020cfh

    Abstract: No abstract text available
    Text: ZXTP25020CFH 20V, SOT23, PNP medium power transistor Summary BVCEO > -20V BVECO > -7V IC cont = -4A RCE(sat) = 34m⍀ VCE(sat) < -55mV @ 1A PD = 1.25W Complementary part number ZXTN25020CFH Description C Advanced process capability and package design have been used to


    Original     		PDF ZXTP25020CFH -55mV ZXTN25020CFH D-81541 zxtp25020cfh

    up2518

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UP2518 Preliminary PNP TRANSISTOR LOW VCE SAT PNP SILICON POWER TRANSISTORS „ FEATURES *Extremely low collector-emitter saturation voltage VCE(SAT) and corresponding extremely low equivalent on-resistance RCE(SAT) (97mΩ at 1.5A)


    Original     		PDF UP2518 UP2518L-AE3-R UP2518G-AE3-R OT-23 QW-R206-083 up2518

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type Product specification FCX1053A Features 2W power dissipation. 10A peak pulse current. Excellent HFE characteristics up to 10 Amps. Extremely low saturation voltage E.g. 21mv Typ. Extremely low equivalent on-resistance. RCE sat 78mÙ at 4.5A.


    Original     		PDF FCX1053A 100mA 100MHz

    TRANSISTOR MARKING 1d8

    Abstract: TS16949 ZXTN19020DFF ZXTP19020DFF ZXTP19020DFFTA
    Text: ZXTP19020DFF 20V, SOT23F, PNP medium power transistor Summary BVCEO > -20V BVECO > -4V IC cont = 5.5A VCE(sat) < 44mV @ 1A RCE(sat) = 26mΩ PD = 1.5W Complementary part number: ZXTN19020DFF Description C Advanced process capability and package design have been used to


    Original     		PDF ZXTP19020DFF OT23F, ZXTN19020DFF D-81541 TRANSISTOR MARKING 1d8 TS16949 ZXTN19020DFF ZXTP19020DFF ZXTP19020DFFTA

    Untitled

    Abstract: No abstract text available
    Text: ZXTP2025F 50V, SOT23, PNP medium power transistor Summary V BR CEO > -50V IC(cont) = -5A RCE(sat) = 30m⍀ typical VCE(sat) < - 60mV @ -1A PD = 1.2W Complementary part number: ZXTN2031F Description Advanced process capability and package design have been used to


    Original     		PDF ZXTP2025F ZXTN2031F

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UP2518 PNP SILICON TRANSISTOR LOW VCE SAT PNP SILICON POWER TRANSISTORS FEATURES 3 * Extremely low collector-emitter saturation voltage VCE(SAT) and corresponding extremely low equivalent on-resistance RCE(SAT) (97mΩ at 1.5A)


    Original     		PDF UP2518 OT-23 UP2518L UP2518-AE3-R UP2518L-AE3-R OT-23 UP2518L-AE3-R QW-R206-083

    Untitled

    Abstract: No abstract text available
    Text: TAIW AN s TSM4410 SEMICONDUCTOR 25V N-Channel MOSFET bl RoHS CO M PLIANCE SO P-8 PRODUCT SUMMARY Pin Definition: 1. S ou rce 2. S ou rce 3. S ou rce VDS V R o s ic a m o ) 25 4. Gate 5. 6, 7, 8. Drain Features Id (A) 1 5 V cs= 10V 10 21 @ V « s= 4 .5 V


    OCR Scan     		PDF TSM4410 4410C

    Untitled

    Abstract: No abstract text available
    Text: TAIW AN s TSM4410 SEMICONDUCTOR 25V N-Channei MOSFET b RoHS CO M PLIANCE SO P-8 PRODUCT SUM M ARY Pin Definition: 1. S ou rce 2. S ou rce 3. S ou rce R o s tru m ) I d A) 1 5 V cs= 10V 10 21 @ V{;r> = 4.5V 8 V DS (V) 25 4. Gate 5. 6, 7, 8. Drain Features


    OCR Scan     		PDF TSM4410 4410C

    TSM4410

    Abstract: TSM4410CS D0351
    Text: s TAIWAN TSM4410 S E M IC O N D U C T O R 25V N-Channei MOSFET pb RoHS CO M PLIANCE SOP-8 PRODUCT SUM M AR Y Pin Definition; 1. S ou rce 2. S ou rce 3. S ou rce V DS (V) 4. Gate R o s ic a m o ) Id (A) 1 5 V c s = 10V 10 21 @ V {^ = 4 . 5 V 8 25 5. 6, 7, 8. Drain


    OCR Scan     		PDF TSM4410 TSM4410CS TSM4410 D0351

    034-AA

    Abstract: tic 136
    Text: SIPM OS N Channel M O S F E T B S P 89 Preliminary Data • S IP M O S - enhancem en t m ode • D rain-sou rce voltag e Vfcs = 240V • C o n tin u o u s drain current l D = 0.34A • D rain-sou rce o n -resistan ce A dston = 6.0CÎ • Total pow er d issip atio n


    OCR Scan     		PDF 67002-S652 034-AA tic 136

    tic 223

    Abstract: No abstract text available
    Text: B S P 149 SIPM OS N Channel M O S F E T Preliminary Data • S IP M O S - dep letio n m ode • D rain-sou rce voltage Vfcs= 200V • C o n tin u o u s drain current /„ = .44A • D rain-sou rce o n-resistance ftos on = 3.50 Pn = 1 ,5W • Total pow er d issip ation


    OCR Scan     		PDF 67000-S071 00A/f/s 00A//JS tic 223

    Untitled

    Abstract: No abstract text available
    Text: SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR FMMT591A ISSUE 3 - OCTOBER 1995_ FEATURES Low equivalent on resistance RCE Mrtl = 350mi2 a t 1A PART MARKING DETAIL - 91A COMPLEMENTARY TYPE- FMMT491A ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL


    OCR Scan     		PDF FMMT591A 350mi2 FMMT491A -100m -50mA, 100MHz

    transistor marking ra

    Abstract: No abstract text available
    Text: MMBF170LT1 CASE 318-07, STYLE 21 SOT-23 T0-236AB M AXIM UM RATINGS Rating Symbol Value Unit D ra in -S o u rce V o lta g e VD SS 60 Vdc D ra in G a te V o lta g e Vd g s 60 V dc G a te -S o u rce V olta g e — C o n tin u o u s - N o n -re p e titive <tp $ 50 /is)


    OCR Scan     		PDF MMBF170LT1 OT-23 T0-236AB) transistor marking ra