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    RCA OUTLINE W Search Results

    RCA OUTLINE W Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPH9R00CQH Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation

    RCA OUTLINE W Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TV Wireless Mini

    Abstract: wireless vga circuit receiver transmitter 1.2 ghz video 15 pin vga to video out rca video vga to composite convert radio av receiver wireless av transmitter video transmitter 2.4 GHz portable dvd player vga to rca circuit
    Text: AITech ProPC/TV Wireless Mini USER’S MANUAL FEDERAL COMMUNICATIONS COMMISSION This device complies with Part 15 of the FCC Rules Operation is subject to the following two conditions: this device may not cause harmful interference, and 2 this device must accept any interference received, including interference that


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    PDF 15pin TV Wireless Mini wireless vga circuit receiver transmitter 1.2 ghz video 15 pin vga to video out rca video vga to composite convert radio av receiver wireless av transmitter video transmitter 2.4 GHz portable dvd player vga to rca circuit

    eMMC

    Abstract: emmc spec samsung eMMC 4.5 emmc 4.5 spec emmc operation emmc Initialization KMCME0000M emmc 5.0 emmc 4.5 emmc spec samsung
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    PDF S19904EJ1V0AN00 CMD42 CMD43 CMD54 CMD55 CMD56 CMD59 eMMC emmc spec samsung eMMC 4.5 emmc 4.5 spec emmc operation emmc Initialization KMCME0000M emmc 5.0 emmc 4.5 emmc spec samsung

    CMD13

    Abstract: CMD18 CMD58 CMD7
    Text: OKI Semiconductor P2ROM MMC FEDR57T00801G-02-01 Issue Date: March 31, 2004 P2ROM MultiMediaCard 1. GENERAL DESCRIPTION P2ROM MMC stands for P2ROM MultiMediaCard in which an Oki Original Product P2ROM is embedded. P2ROM Production Programmed ROM utilizes Oki unique memory cell, which is an exclusive Oki technology.


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    PDF FEDR57T00801G-02-01 MR57T00801G CMD13 CMD18 CMD58 CMD7

    CMD58

    Abstract: CMD18 cmd23 set_block_count
    Text: OKI Semiconductor MR57T01601J PEDR57T01601J-02-03 Issue Date: September 17, 2004 Preliminary P2ROM MultiMediaCard 1. GENERAL DESCRIPTION P2ROM MMC stands for P2ROM MultiMediaCard in which an Oki Original Product P2ROM is embedded. P2ROM Production Programmed ROM utilizes Oki unique memory cell, which is an exclusive Oki technology.


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    PDF MR57T01601J PEDR57T01601J-02-03 MR57T01601J-xxxKB CMD58 CMD18 cmd23 set_block_count

    cmd23 set_block_count

    Abstract: CMD58
    Text: OKI Semiconductor MR57T00801G FEDR57T00801G-02-02 Issue Date: June 25, 2004 P2ROM MultiMediaCard 1. GENERAL DESCRIPTION P2ROM MMC stands for P2ROM MultiMediaCard in which an Oki Original Product P2ROM is embedded. P2ROM Production Programmed ROM utilizes Oki unique memory cell, which is an exclusive Oki technology.


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    PDF MR57T00801G FEDR57T00801G-02-02 cmd23 set_block_count CMD58

    CMD7

    Abstract: No abstract text available
    Text: OKI Semiconductor MR57T00101F FEDR57T00101F-02-02 Issue Date: June 25, 2004 P2ROM MultiMediaCard 1. GENERAL DESCRIPTION P2ROM MMC stands for P2ROM MultiMediaCard in which an Oki Original Product P2ROM is embedded. P2ROM Production Programmed ROM utilizes Oki unique memory cell, which is an exclusive Oki technology.


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    PDF MR57T00101F FEDR57T00101F-02-02 CMD7

    CMD58

    Abstract: No abstract text available
    Text: OKI Semiconductor MR57T01601J PEDR57T01601J-02-02 Issue Date: June 25, 2004 Preliminary P2ROM MultiMediaCard 1. GENERAL DESCRIPTION P2ROM MMC stands for P2ROM MultiMediaCard in which an Oki Original Product P2ROM is embedded. P2ROM Production Programmed ROM utilizes Oki unique memory cell, which is an exclusive Oki technology.


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    PDF MR57T01601J PEDR57T01601J-02-02 CMD58

    oki cross

    Abstract: CMD13 CMD16 CMD17 MR57T00101F CMD23
    Text: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.


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    oki cross

    Abstract: CMD13 CMD16 CMD17 MR57T00801G CMD59
    Text: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.


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    CMD13

    Abstract: oki cross CMD16 CMD17 MR57T01601K PEDR57T01601K-02-01 CMD23
    Text: OKI Semiconductor P2ROM MMC PEDR57T01601K-02-01 Issue Date: March 31, 2004 Preliminary P2ROM MultiMediaCard 1. GENERAL DESCRIPTION P2ROM MMC stands for P2ROM MultiMediaCard in which an Oki Original Product P2ROM is embedded. P2ROM Production Programmed ROM utilizes Oki unique memory cell, which is an exclusive Oki technology.


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    PDF PEDR57T01601K-02-01 MMCMR57T01601K CMD13 oki cross CMD16 CMD17 MR57T01601K PEDR57T01601K-02-01 CMD23

    CMD23

    Abstract: cmd23 set_block_count CMD58 CMD59 etc124 CMD10
    Text: OKI Semiconductor MR57T00401J FEDR57T00401J-02-02 Issue Date: June 25, 2004 P2ROM MultiMediaCard 1. GENERAL DESCRIPTION P2ROM MMC stands for P2ROM MultiMediaCard in which an Oki Original Product P2ROM is embedded. P2ROM Production Programmed ROM utilizes Oki unique memory cell, which is an exclusive Oki technology.


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    PDF MR57T00401J FEDR57T00401J-02-02 CMD23 cmd23 set_block_count CMD58 CMD59 etc124 CMD10

    L6207

    Abstract: L6207D L6207N L6207PD SO24 2023B
    Text: L6207 DMOS DUAL FULL BRIDGE DRIVER WITH PWM CURRENT CONTROLLER • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ OPERATING SUPPLY VOLTAGE FROM 8 TO 52V 5.6A OUTPUT PEAK CURRENT 2.8A DC RDS(ON) 0.3Ω TYP. VALUE @ Tj = 25 °C OPERATING FREQUENCY UP TO 100KHz NON DISSIPATIVE OVERCURRENT


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    PDF L6207 100KHz L6207 PowerDIP24 PowerSO36 L6207D L6207N L6207PD SO24 2023B

    C30971EL

    Abstract: No abstract text available
    Text: E G & G/CANADA/O PTOE LEK ItC JI 303Qbl0 ÜDDDBS4 TDT • CANAT"'- ET Electro Optics and Devices 4^/- S ' / Solid State Detectors Developmental Types C30971 E, C30971 EL Photodiodes Silicon Photodetectors for High-Speed, Wide Bandwidth Applications ■ Spectral Response Range - 10% Points - 400 to 1000 nm


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    PDF 303Qbl0 C30971 C30971E C30971EL C30971EL

    C30116

    Abstract: RCA Solid State C30116/F
    Text: E G & G/CANADA/OPTOELEK 3D3GblO G00D013 SSM « C A N A ID • W f f e J V Electro Optics l l l i f I and Devices Solid State Emitters Developmental Type C30116, C30116/F 1060 nm Indium Gallium Arsenide Infrared Surface Emitters for Pulsed or Continuous DC Operation


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    PDF G00D013 C30116, C30116/F C30116 C30116/F C30116 RCA Solid State

    Untitled

    Abstract: No abstract text available
    Text: E G & G/CANADA/OPTOELEK ID î • 3ü30blü G O O O i n ItC ilElectro 123 M C A N A T-W S i Photodiode C30895 DATA SHEET Optics Silicon Avalanche Photodiode Optimized for High Responsivity and Very Low Noise at 1060 Nanometers ■ Noise Equivalent Power NEP at 1060 nm — 7.5 x 1 0 14 W/Hz1/2 max.


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    PDF C30895 C30895 ED-0028/10/88

    Untitled

    Abstract: No abstract text available
    Text: E G & G / CANADA/OPTOELEK IO D a o a O b l D DDDD1S7 7 3 7 B C A N A VtCil Optics Si Photodiode C30974E DATA SHEET Rectangular Silicon Avalanche Photodiode Preamplifier Module • Responsivity at TA « 25°C 3.7 x 10s V/W at 900 nm — 1.8 x 10s V/W at 1060 mn


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    PDF C30974E C30974E ED-0034/10/88

    photodioda

    Abstract: N10-13 laser rca rca 210 C30895
    Text: 1GE D • I 74fi4b75 D D O D i n A INC/ ELECTRO OPTICS VICil H I Photodiode C30895 DATASHEET Silicon Avalanche Photodiode Optimized for High Responsivity and Very Low Noise at 1060 Nanometers ■ Noise Equivalent Pow er NEP a t 1060 n m — 7.5 x 1 0 14 W /Hz1'2 max.


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    PDF 4fi4b75 C30895 C30895 ED-0028/10/88 photodioda N10-13 laser rca rca 210

    LS7094

    Abstract: 2l688
    Text: E G & G/CANADA/OPTOELEK ItCJl 303DblD □□□□□27 7 « C A N A IDE D Electro Optics and Devices Solid State Emitters Developmental Types C86039E, C86040E Series Gallium Aluminum Arsenide Injection Lasers for Pulsed Operation at Room Temperature Wavelength of Peak Radiant Intensity


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    PDF 303DblD C86039E, C86040E C86039EW1: C86039EW2: C86039EW3: C86039EW4: C86040EW1: C86040EW2: C86040EW3: LS7094 2l688

    photodiode demodulation

    Abstract: EG*G Optoelectronics rca 036 C30957E
    Text: ^Ü^EG kG CANADA LTD. Optoelectronics Division Wr$ï- Formerly; ItC il W Effective January 1, 1991 :tro ics Photodiode C30957E DATA SHEET n-Type Silicon p-i-n Photodetector • Detector Chip Close to Window ■ Low Operating Voltage — VR = 45 V ■ Anti-Reflection Coated to Enhance Responsivity at 900 nm


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    PDF C30957E C30957E ED-0032/10/88 photodiode demodulation EG*G Optoelectronics rca 036

    Untitled

    Abstract: No abstract text available
    Text: G & G / CANADA/OPTOELEK Æ• n ■ m 10E D ■ Electro b # ■ Optics *1 :ï ■a T C86045EV1 M C86045EV2 The RCA C86045 and C86053 series are InGaAsP laser diodes designed specifically for fiber optic test systems. The output wavelength 1300 nm is well


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    PDF C86045EV1 3030blD C86045EV2 C86045 C86053 C86045EV1 C86045EV2 C86045EV3,

    814 tube

    Abstract: ef 804 rca 804 804 tube RADIOTRON rca company 100 watt power supply dc 12 volt to 220 volt dc rs tube RCA tube 76
    Text: R-F POWER AMPLIFIER PENTODE Filament Thoriated Tungsten Voltage 7.5 Current 3.0 Transconductance for a-c or d-c vol ts amp. pmhos p l a t e c u r r e n t o f 32 ma. 3250 Direct Interelectrode Capacitances: 0.01 max. mmT Grid to Pla te with external shielding


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    PDF VOLTS-1250 92C-4S66 2C-4S67 92C-4569 814 tube ef 804 rca 804 804 tube RADIOTRON rca company 100 watt power supply dc 12 volt to 220 volt dc rs tube RCA tube 76

    Untitled

    Abstract: No abstract text available
    Text: G 8. G / C A N A D A / O P T O E L E K Electro Optics 2TE D 3D3DblD 00002b0 2 T Z¿/ / ~ O S ^ IC A N A C86093E 910 nm Quantum Well Pulsed Laser DATA SHEET • V ■ ■ ■ ■ Operation at 200ns pulse duration and 5 kHz repetition rate High Peak Output Power:


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    PDF 00002b0 C86093E 200ns 910nm C86093E 900to

    4632

    Abstract: cermolox RCA tube 76
    Text: 4632 B eam CER M O LO X Broadband UHF Operation 2300 w CW Output at 890 MHz Pow er Tube Matrix Cathode Forced~Air Cooled E LE C T R IC A L H eater: T y p e . M atrix O xide C o a te d U n ip o te n tia l C a th o d e


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    PDF 92LM-2522V 4632 cermolox RCA tube 76

    CA3261

    Abstract: A3261 CA3202E as-001a ca3154e CA3157G ca3202
    Text: ••■«•i*^¡" s*. R C il^ State CA3261 Linear Integrated Circuits Advance Information AFC/Horizontal Oscillator Signal Processor With Sync Separator and A G C Features: rn ; if 4' ! II i> ? : H -1 8 9 9 18-L*ad DuaMit-Une Plastic Package E Suffix ■


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    PDF CA3261 A3261 CA3202E as-001a ca3154e CA3157G ca3202