Untitled
Abstract: No abstract text available
Text: BUV47, BUV47A NPN SILICON POWER TRANSISTORS ● Rugged Triple-Diffused Planar Construction ● 9 A Continuous Collector Current ● 1000 Volt Blocking Capability SOT-93 PACKAGE TOP VIEW B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRAAA
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Original
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BUV47,
BUV47A
OT-93
BUV47
SAP762AA
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PDF
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BUV47
Abstract: BUV47A rBE BD135 2N2222 2N2904 BD135 BD136 BY205-400 D44H11 D45H11
Text: BUV47, BUV47A NPN SILICON POWER TRANSISTORS ● Rugged Triple-Diffused Planar Construction ● 9 A Continuous Collector Current ● 1000 Volt Blocking Capability SOT-93 PACKAGE TOP VIEW B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRAAA
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Original
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BUV47,
BUV47A
OT-93
BUV47
SAP762AA
BUV47
BUV47A
rBE BD135
2N2222
2N2904
BD135
BD136
BY205-400
D44H11
D45H11
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PDF
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U/25/20/TN26/15/850/power transistor bd135
Abstract: No abstract text available
Text: BUV47, BUV47A NPN SILICON POWER TRANSISTORS ● Rugged Triple-Diffused Planar Construction ● 9 A Continuous Collector Current ● 1000 Volt Blocking Capability This model is currently available, but not recommended for new designs. For more information, see http://bourns.com/data/
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Original
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BUV47,
BUV47A
OT-93
global/pdfs/TSP1203
SAP762AA
BUV47
TCP762AD
U/25/20/TN26/15/850/power transistor bd135
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PDF
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buv48 equivalent
Abstract: BUV48 BY205-400 2N2222 2N2904 BD135 BD136 BUV48A D44H11 D45H11
Text: BUV48, BUV48A NPN SILICON POWER TRANSISTORS ● Rugged Triple-Diffused Planar Construction ● 15 A Continuous Collector Current ● 1000 Volt Blocking Capability SOT-93 PACKAGE TOP VIEW B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base.
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Original
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BUV48,
BUV48A
OT-93
BUV48
TCP765AD
buv48 equivalent
BUV48
BY205-400
2N2222
2N2904
BD135
BD136
BUV48A
D44H11
D45H11
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PDF
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BD139 amplifier
Abstract: rBE BD135 BD135 BD135,BD137,BD139 BD139 BD137 power transistor bd137
Text: BD135…BD139 NPN SILICON EPITAXIAL POWER TRANSISTOR These devices are designed as Audio Amplifier and Drivers Utilizing. E C B • TO-126 Plastic Package Absolute Maximum Ratings Ta=25oC Symbol BD135 BD137 BD139 Unit Collector Emitter Voltage VCEO 45 60
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Original
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BD135.
BD139
O-126
BD135
BD137
BD137
500mA,
BD139 amplifier
rBE BD135
BD135,BD137,BD139
BD139
power transistor bd137
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PDF
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Untitled
Abstract: No abstract text available
Text: BD135T / BD137T / BD139T NPN SILICON EPITAXIAL POWER TRANSISTOR These devices are designed as Audio Amplifier and Drivers Utilizing. E C B • TO-126 Plastic Package Absolute Maximum Ratings Ta=25 OC Parameter Symbol Value BD135T BD137T BD139T Unit Collector Emitter Voltage
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Original
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BD135T
BD137T
BD139T
O-126
Power-25
BD135T
BD137T
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PDF
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Untitled
Abstract: No abstract text available
Text: BD135T / BD137T / BD139T NPN SILICON EPITAXIAL POWER TRANSISTOR These devices are designed as Audio Amplifier and Drivers Utilizing. E C B • TO-126 Plastic Package Absolute Maximum Ratings Ta=25 OC Parameter Symbol Value BD135T BD137T BD139T Unit Collector Emitter Voltage
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Original
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BD135T
BD137T
BD139T
O-126
BD135T
BD137T
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PDF
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BD135,BD137,BD139
Abstract: BD139 TRANSISTOR NPN BD139 BD139 amplifier BD139 NPN rBE BD135 BD135 BD137
Text: BD135, BD137, BD139 NPN SILICON EPITAXIAL POWER TRANSISTOR These devices are designed as Audio Amplifier and Drivers Utilizing. E C B • TO-126 Plastic Package Absolute Maximum Ratings Ta=25 OC Parameter Symbol BD135 BD137 BD139 Unit Collector Emitter Voltage
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Original
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BD135,
BD137,
BD139
O-126
BD135
BD137
BD135
BD137
BD135,BD137,BD139
BD139
TRANSISTOR NPN BD139
BD139 amplifier
BD139 NPN
rBE BD135
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PDF
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BD139 amplifier
Abstract: rBE BD135 BD135 BD137 BD139 BD139 NPN transistor
Text: BD135…BD139 NPN SILICON EPITAXIAL POWER TRANSISTOR These devices are designed as Audio Amplifier and Drivers Utilizing. E C B • TO-126 Plastic Package Absolute Maximum Ratings Ta=25oC Symbol BD135 BD137 BD139 Unit Collector Emitter Voltage VCEO 45 60
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Original
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BD135.
BD139
O-126
BD135
BD137
25CEO
BD137
500mA,
BD139 amplifier
rBE BD135
BD139
BD139 NPN transistor
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PDF
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BUV48A
Abstract: buv48
Text: BUV48, BUV48A NPN SILICON POWER TRANSISTORS ● Rugged Triple-Diffused Planar Construction ● 15 A Continuous Collector Current ● 1000 Volt Blocking Capability This model is currently available, but not recommended for new designs. For more information, see http://bourns.com/data/
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Original
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BUV48,
BUV48A
OT-93
global/pdfs/TSP1203
TCP765AD
BUV48
SAP765AA
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PDF
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BUV47
Abstract: BUV47A 2N2222 2N2904 BD135 BD136 BY205-400 D44H11 D45H11 2N2222 hfe
Text: BUV47, BUV47A NPN SILICON POWER TRANSISTORS ● Rugged Triple-Diffused Planar Construction ● 9 A Continuous Collector Current ● 1000 Volt Blocking Capability SOT-93 PACKAGE TOP VIEW B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRAAA
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Original
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BUV47,
BUV47A
OT-93
BUV47
OT-93
BUV47
BUV47A
2N2222
2N2904
BD135
BD136
BY205-400
D44H11
D45H11
2N2222 hfe
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PDF
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BUV48
Abstract: BUV48A 2N2222 2N2904 BD135 BD136 BY205-400 D44H11 D45H11
Text: BUV48, BUV48A NPN SILICON POWER TRANSISTORS ● Rugged Triple-Diffused Planar Construction ● 15 A Continuous Collector Current ● 1000 Volt Blocking Capability SOT-93 PACKAGE TOP VIEW B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base.
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Original
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BUV48,
BUV48A
OT-93
BUV48
OT-93
BUV48
BUV48A
2N2222
2N2904
BD135
BD136
BY205-400
D44H11
D45H11
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PDF
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BUV48A
Abstract: buv48
Text: BUV48, BUV48A NPN SILICON POWER TRANSISTORS ● Rugged Triple-Diffused Planar Construction ● 15 A Continuous Collector Current ● 1000 Volt Blocking Capability SOT-93 PACKAGE TOP VIEW B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base.
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Original
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BUV48,
BUV48A
OT-93
BUV48
TCP765AD
SAP765AA
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PDF
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BD136-BD138-BD140
Abstract: BD135-BD137-BD139 BDXXX BD135,BD137,BD139 BD139 BD139 N BD139 PIN DATA bd135 N rBE BD135 BD139 circuits
Text: NPN BD136 – BD138 – BD140 SILICON PLANAR EPITAXIAL POWER TRANSISTORS. The BD136-BD138-BD140 are PNP Transistors They are recommended for driver stages in hi-fi amplifiers and television circuits. They are mounted in Jedec TO-126 plastic package. NPN complements are BD135-BD137-BD139.
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Original
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BD136
BD138
BD140
BD136-BD138-BD140
O-126
BD135-BD137-BD139.
BD135
BD137
BD139
BD135-BD137-BD139
BDXXX
BD135,BD137,BD139
BD139
BD139 N
BD139 PIN DATA
bd135 N
rBE BD135
BD139 circuits
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PDF
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BD139 N
Abstract: BD139 bd135 N BD135-BD137-BD139 BD136-BD138-BD140 BDXXX BD135 BD137 BD139 PIN DATA BD135,BD137,BD139
Text: NPN BD135 – BD137 – BD139 SILICON PLANAR EPITAXIAL POWER TRANSISTORS. The BD135-BD137-BD139 are NPN Transistors They are recommended for driver stages in hi-fi amplifiers and television circuits. They are mounted in Jedec TO-126 plastic package. PNP complements are BD136-BD138-BD140.
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Original
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BD135
BD137
BD139
BD135-BD137-BD139
O-126
BD136-BD138-BD140.
BD139 N
BD139
bd135 N
BD136-BD138-BD140
BDXXX
BD135
BD137
BD139 PIN DATA
BD135,BD137,BD139
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PDF
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BUV48V
Abstract: by205 diode BY205-400 diode by205 BUV48 buv48 equivalent by205 TRANSISTOR D 1978 diode by205 400 TRANSISTOR 2n2904
Text: BUV48, BUV48A NPN SILICON POWER TRANSISTORS Copyright 1997, Power Innovations Limited, UK ● Rugged Triple-Diffused Planar Construction ● 15 A Continuous Collector Current ● 1000 Volt Blocking Capability AUGUST 1978 - REVISED MARCH 1997 SOT-93 PACKAGE
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Original
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BUV48,
BUV48A
OT-93
BUV48
BUV48V
by205 diode
BY205-400
diode by205
BUV48
buv48 equivalent
by205
TRANSISTOR D 1978
diode by205 400
TRANSISTOR 2n2904
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PDF
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CDIL BD140
Abstract: CDIL BD139 CDIL BD138 bd139 pin out CDIL BD139 pnp BD136 of BD140 CDIL BD136 transistors bd136 BD135
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP EPITAXIAL SILICON POWER TRANSISTORS BD136 BD138 BD140 TO126 Plastic Package EC B Designed for use as Audio Amplifier and Drivers Utilizing Complementary BD135, BD137, BD139
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Original
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BD136
BD138
BD140
BD135,
BD137,
BD139
BD136
C-120
CDIL BD140
CDIL BD139
CDIL BD138
bd139 pin out
CDIL BD139 pnp
of BD140
CDIL BD136
transistors bd136
BD135
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PDF
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CDIL BD139
Abstract: CDIL BD137 CDIL BD140 bd139 cdil bd140 pin out BD139 amplifier BD137 parameters BD139 PIN DATA rBE BD135 BD137
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL SILICON POWER TRANSISTORS BD135 BD137 BD139 TO126 Plastic Package EC B Designed for use as Audio Amplifier and Drivers Utilizing Complementary BD136, BD138, BD140
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Original
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BD135
BD137
BD139
BD136,
BD138,
BD140
BD135
C-120
CDIL BD139
CDIL BD137
CDIL BD140
bd139 cdil
bd140 pin out
BD139 amplifier
BD137 parameters
BD139 PIN DATA
rBE BD135
BD137
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PDF
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Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP EPITAXIAL SILICON POWER TRANSISTORS BD136 BD138 BD140 TO126 Plastic Package EC B Designed for use as Audio Amplifier and Drivers Utilizing Complementary BD135, BD137, BD139
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Original
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BD136
BD138
BD140
BD135,
BD137,
BD139
BD136
C-120
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PDF
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CDIL BD137
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL SILICON POWER TRANSISTORS BD135 BD137 BD139 TO126 Plastic Package EC B Designed for use as Audio Amplifier and Drivers Utilizing Complementary BD136, BD138, BD140
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Original
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BD135
BD137
BD139
BD136,
BD138,
BD140
BD135
C-120
CDIL BD137
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PDF
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by TP3021/D SEMICONDUCTOR TECHNICAL DATA The RF Line UHF Power Transistor TP3021 The TP3021 is designed for 24 V common emitter base station amplifiers. Operating in the 820 – 960 MHz bandwidth, it has been specifically designed for
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Original
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TP3021/D
TP3021
TP3021
MCM145100/D*
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PDF
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8D139
Abstract: BDL39 bdxxx BD137 BD139 power transistor bd137 Transistor 80139 BD135 bd139 bd140 power transistor bd139
Text: BD135 BD137 BD139 SILICON PLANAR EPITAXIAL POWER TRANSISTORS General purpose n-p-n transistors in SOT-32 plastic envelope, recommended for driver stages in hi-fi amplifiers and television circuits. The BD136, BD138 and BD140are complementary to the BD135, BD137 and BD139 respectively.
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OCR Scan
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BD135
BD137
BD139
OT-32
BD136,
BD138
BD140
BD135,
BD137
BD139
8D139
BDL39
bdxxx
power transistor bd137
Transistor 80139
BD135
bd139 bd140
power transistor bd139
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PDF
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40 pin J004
Abstract: transistor bd135
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor The MRF6402 is designed for 1.8 GHz Personal Communications Network PCN base stations applications. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and
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OCR Scan
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MRF6402
1N4148
BD135
40 pin J004
transistor bd135
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PDF
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bd135 equivalent
Abstract: bd135 input impedance rBE BD135 resistor 2,2
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line TP3062 UHF Power Thransistor The TP3062 is designed for 960 MHz mobile base stations in both analog and digital applications. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness. Including
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OCR Scan
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TP3062
TP3062
bd135 equivalent
bd135 input impedance
rBE BD135
resistor 2,2
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PDF
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