RB721Q-40
Abstract: No abstract text available
Text: RB721Q-40 Diodes Schottky barrier diode RB721Q-40 zExternal dimensions Units : mm zApplications High speed switching CATHODE BAND (BLACK) zFeatures 1) Glass-sealed envelope for high reliability. (MSD) 2) Small pitch enables insertion on PCBs. 3) Low VF and low IR.
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RB721Q-40
DO-34
RB721Q-40
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Untitled
Abstract: No abstract text available
Text: MCC omponents 20736 Marilla Street Chatsworth !"# $ % !"# TM Micro Commercial Components RB721Q-40 Features • • • • • • 30 mA Rectifier 40 Volts High speed switching Small pitch enables insertion on PCBs.
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RB721Q-40
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diode T-77
Abstract: RB721Q-40 T-77 do-34 rohm
Text: RB721Q-40 Diodes Schottky barrier diode RB721Q-40 zApplications Low current rectification zExternal dimensions Unit : mm TYPE NO. (BLACK) CATHODE BAND (BLACK) φ0.4±0.1 zFeatures 1) Glass sealed envelope. (MSD) 2) Low VF, Low IR 3) High reliability S 2
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RB721Q-40
DO-34
diode T-77
RB721Q-40
T-77
do-34 rohm
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RB721Q-40
Abstract: No abstract text available
Text: MCC omponents 20736 Marilla Street Chatsworth !"# $ % !"# TM Micro Commercial Components RB721Q-40 Features • • • • 30 mA Rectifier 40 Volts High speed switching Small pitch enables insertion on PCBs.
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RB721Q-40
RB721Q-40
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Untitled
Abstract: No abstract text available
Text: MCC omponents 20736 Marilla Street Chatsworth !"# $ % !"# TM Micro Commercial Components RB721Q-40 Features • • • • • • 30 mA Rectifier 40 Volts High speed switching Small pitch enables insertion on PCBs.
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RB721Q-40
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Untitled
Abstract: No abstract text available
Text: MCC omponents 20736 Marilla Street Chatsworth !"# $ % !"# TM Micro Commercial Components RB721Q-40 Features • • • • 30 mA Rectifier 40 Volts High speed switching Small pitch enables insertion on PCBs.
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RB721Q-40
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RB721Q
Abstract: No abstract text available
Text: Diodes Schottky barrier diode RB721Q–40 FApplications High speed switching FExternal dimensions Units: mm Schottky barrier diodes FFeatures 1) Glass–sealed envelope for high reliability. (MSD) 2) Small pitch enables insertion on PCBs. 3) Low reverse current and low forward voltage.
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RB721Q
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ROHM RB721Q
Abstract: RB721Q-40
Text: RB721Q-40 Diodes Schottky barrier diode RB721Q-40 !Applications High speed switching !External dimensions Units : mm CATHODE BAND (BLACK) !Features 1) Glass-sealed envelope for high reliability. (MSD) 2) Small pitch enables insertion on PCBs. 3) Low VF and low IR.
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RB721Q-40
DO-34
ROHM RB721Q
RB721Q-40
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c125t
Abstract: 8b diode RB721Q
Text: LESHAN RADIO COMPANY, LTD. RB721Q SCHOTTKY BARRIER DIODES ABSOLUTE MAXIMUM RATINGS Ta = 25°C TYPE V RM (V) RB721Q 25 V R (V) 20 I O (mA) I FSM (mA) 30 200 T j (°C) 125 T stg(°C) -40~+125 Package DO - 34 ELECTRICAL CHARACTERISTICS(Ta = 25°C) TYPE RB721Q
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RB721Q
RB721Q
c125t
8b diode
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Untitled
Abstract: No abstract text available
Text: MCC omponents 20736 Marilla Street Chatsworth !"# $ % !"# TM Micro Commercial Components RB721Q-40 Features • • • 30 mA Rectifier 40 Volts High speed switching Small pitch enables insertion on PCBs.
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RB721Q-40
25Vdc)
1SR139-400
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Untitled
Abstract: No abstract text available
Text: MCC omponents 20736 Marilla Street Chatsworth !"# $ % !"# RB721Q-40 Features • • • 30 mA Rectifier 40 Volts High speed switching Small pitch enables insertion on PCBs. Low VF and low IR
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RB721Q-40
25Vdc)
1SR139-400
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Untitled
Abstract: No abstract text available
Text: MCC omponents 20736 Marilla Street Chatsworth !"# $ % !"# TM Micro Commercial Components RB721Q-40 Features • • • • 30 mA Rectifier 40 Volts High speed switching Small pitch enables insertion on PCBs.
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RB721Q-40
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RB721Q
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Schottky barrier diode RB721Q . 300mW DO-34 . Glass silicon switching diodes . We declare that the material of product compliance with RoHS requirements. Product Characteristic Absolute Maximum Ratings Ta=25°C TYPE VRM(V) VR(V)
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RB721Q
300mW
DO-34
5000pcs/each
260mm
RB721Q
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RB721Q-40
Abstract: No abstract text available
Text: Certificate TH97/10561QM RB721Q-40 Certificate TW00/17276EM SCHOTTKY BARRIER DIODE DO - 34 Glass PRV : 40 Volts IO : 30 mA 1.00 25.4 min. 0.063 (1.6 )max. FEATURES : * Silicon epitaxial planar * Low forward voltage * Small pitch enables insertion on PCBs.
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TH97/10561QM
RB721Q-40
TW00/17276EM
DO-34
RB721Q-40
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RB721Q-40
Abstract: T-77 ROHM RB721Q
Text: RB721Q-40 Diodes Schottky barrier diode RB721Q-40 zApplications Low current rectification zExternal dimensions Unit : mm TYPE NO. (BLACK) CATHODE BAND (BLACK) φ0.4±0.1 zFeatures 1) Glass sealed envelope. (MSD) 2) Low VF, Low IR 3) High reliability S 2
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RB721Q-40
DO-34
RB721Q-40
T-77
ROHM RB721Q
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RB721Q-40
Abstract: No abstract text available
Text: TH97/10561QM RB721Q-40 TW00/17276EM IATF 0060636 SGS TH07/1033 SCHOTTKY BARRIER DIODE DO - 34 Glass PRV : 40 Volts IO : 30 mA 1.00 25.4 min. 0.078 (2.0 )max. FEATURES : * Silicon epitaxial planar * Low forward voltage * Small pitch enables insertion on PCBs.
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TH97/10561QM
RB721Q-40
TW00/17276EM
TH07/1033
DO-34
RB721Q-40
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RB721Q-40
Abstract: RB721Q do-34 rohm
Text: RB721Q-40 Diodes Schottky barrier diode RB721Q-40 !Applications High speed switching !External dimensions Units : mm CATHODE BAND (BLACK) !Features 1) Glass-sealed envelope for high reliability. (MSD) 2) Small pitch enables insertion on PCBs. 3) Low VF and low IR.
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RB721Q-40
DO-34
RB721Q-40
RB721Q
do-34 rohm
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RB721Q
Abstract: RB721Q-40
Text: REFERENCE 29-Sep-06 ROHM CO.,LTD Di.Manufacturing Div. SPICE PARAMETER RB721Q-40 No. 1 2 3 4 5 6 7 8 9 10 11 12 13 Characteristic of inner diode NAME PARAMETER IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current
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29-Sep-06
RB721Q-40
100E-08
202E-12
000E-05
010E-08
RB721Q
RB721Q-40
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Untitled
Abstract: No abstract text available
Text: # — K/Diodes R B 721Q RB721Q T J W v 37h IJ7 # ^ * - K Silicon Epitaxial Schottky Barrier Diodes * \tÜH/Dfcnensions llnü : mm 1) 2) 'J \ tf y 1FT 'S S f f À * 5„ 3) @fS$ST<&&<> I CATHOOC BAND • Features 1) Glass sealed type. 2) Inserting by small pitch is avail
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RB721Q
DO-34
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RB721Q
Abstract: No abstract text available
Text: K/Diodes RB721Q RB721Q 13 /Under Development Silicon Epitaxial Schottky Barrier Diode • • # -r|-;£|il/D iniensk>ns (U n it: mm) 1) 3 S / J « T i> 5 o 2) ' J v f c T ^ T S t e i i A ^ n J f f i o 3) ® ftfi'ftT'< fc3o c CATHODE BAND • Features A Sû;
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RB721Q
RB721Q
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ZP33A
Abstract: TZP33A zp 33a 1n9638 zp 278 1N52438 TZP10A MTZJ 188 MTZJ 248 1N6233
Text: Part Marking <Switching Diodes <Rectifier Diodes> <SchoHky Barrier Diodes) 00-4KQ SR) Part No. Part No. Marking Marking ;«tn Marking < Z en er D io d es> Marking DO-34 MSO) RB441Q Marking DO-35<a8D) I; U RB721Q Black = t¿ n > = M M8R DO-340USD] li ,=tftl>=
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00-4KQ
DO-34
RB441Q
RB721Q
DO-340USD]
RB100A
T0220FP
RB015T-40
R8026T-40
1N4146
ZP33A
TZP33A
zp 33a
1n9638
zp 278
1N52438
TZP10A
MTZJ 188
MTZJ 248
1N6233
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Untitled
Abstract: No abstract text available
Text: Diodes Schottky Barrier Diode RB721Q-40 •A pplications High speed switching »External dim ensions Units: mm •F e a tu re s CATHODE 9AND (BLACK} 1)G1ass sealed envelope 2)Small pitch enables insertion on PCBs 3)High reliability c A 29 ± 1 29±1 2 .7 + 0 .3
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RB721Q-40
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RB721Q
Abstract: No abstract text available
Text: RB721Q $ y ^ — K /D iodes R B 721Q V V U > ï £ 05 t * y ; ' J U M y a 7 S 3r —/ \ ' U 7 $ < * - K Silicon Epitaxial Schottky Barrier Diodes • 1 \t"iiEI/D im ensions Unit : mm) J i'ÿ X U ltT '& Z o 2) ' h t : ' y ^ T ' ï i Î À f t ' ' â j B t ~ P & 3 o
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RB721Q
RB721Q
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RB721Q-40
Abstract: RB721Q
Text: RB721Q-40 Diode, Schottky barrier, leaded These glass mold-type diodes are suitable for lead mounting on printed circuit boards. Dimensions Units : mm CATHODE. é Features _ f • available in DO-34 package - - c • part marking, see following table
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RB721Q-40
DO-34
RB721Q-40
RB721Q
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