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    RB TRANSISTOR Search Results

    RB TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    CA3082 Rochester Electronics LLC Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    RB TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MB9B300B

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS706-00024-2v0-E 32-bit ARMTM CortexTM-M3 based Microcontroller MB9B300B Series MB9BF304NB/RB, F305NB/RB, F306NB/RB  DESCRIPTION The MB9B300B Series are a highly integrated 32-bit microcontroller that target for high-performance and


    Original     		PDF DS706-00024-2v0-E 32-bit MB9B300B MB9BF304NB/RB, F305NB/RB, F306NB/RB

    MB9BF506NB

    Abstract: MB9BF505RB MB9BF506RB
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS706-00021-2v0-E 32-bit ARMTM CortexTM-M3 based Microcontroller MB9B500B Series MB9BF504NB/RB, F505NB/RB, F506NB/RB  DESCRIPTION The MB9B500B Series are a highly integrated 32-bit microcontroller that target for high-performance and


    Original     		PDF DS706-00021-2v0-E 32-bit MB9B500B MB9BF504NB/RB, F505NB/RB, F506NB/RB MB9BF506NB MB9BF505RB MB9BF506RB

    MB9BF305RB

    Abstract: MB9BF306NB MB9BF304RB MB9BF306NBPMC MB9B300B
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS706-00024-2v0-E 32-bit ARMTM CortexTM-M3 based Microcontroller MB9B300B Series MB9BF304NB/RB, F305NB/RB, F306NB/RB  DESCRIPTION The MB9B300B Series are a highly integrated 32-bit microcontroller that target for high-performance and


    Original     		PDF DS706-00024-2v0-E 32-bit MB9B300B MB9BF304NB/RB, F305NB/RB, F306NB/RB MB9BF305RB MB9BF306NB MB9BF304RB MB9BF306NBPMC

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS706-00021-2v0-E 32-bit ARMTM CortexTM-M3 based Microcontroller MB9B500B Series MB9BF504NB/RB, F505NB/RB, F506NB/RB  DESCRIPTION The MB9B500B Series are a highly integrated 32-bit microcontroller that target for high-performance and


    Original     		PDF DS706-00021-2v0-E 32-bit MB9B500B MB9BF504NB/RB, F505NB/RB, F506NB/RB

    500w car audio amplifier circuit diagram

    Abstract: 1200w power amplifier circuit diagram 1200w audio amplifier circuit diagram 1200w audio amplifier 1500w mosfet audio amplifier circuit diagram 800w audio amplifier circuit diagram TRIPATH TA3020 1200w Audio power amplifier circuit diagram 1200w car audio amplifier circuit diagram 4 channel 1200w audio amplifier circuit diagram
    Text: Tr i path Technol ogy, I nc. - Techni cal I nfor m ati on BRIDGED RB-TA3020-1, BRIDGED RB-TA3020-2, BRIDGED RB-TA3020-3 CLASS-T DIGITAL AUDIO AMPLIFIER EVALUATION BOARD USING DIGITAL POWER PROCESSING DPP T M TECHNOLOGY Technical Information-Preliminary


    Original     		PDF RB-TA3020-1, RB-TA3020-2, RB-TA3020-3 RB-TA3020 TA3020 RB-TA3020, MURS120T3 STW34NB20 TA3020 500w car audio amplifier circuit diagram 1200w power amplifier circuit diagram 1200w audio amplifier circuit diagram 1200w audio amplifier 1500w mosfet audio amplifier circuit diagram 800w audio amplifier circuit diagram TRIPATH TA3020 1200w Audio power amplifier circuit diagram 1200w car audio amplifier circuit diagram 4 channel 1200w audio amplifier circuit diagram

    Untitled

    Abstract: No abstract text available
    Text: MB9B500B Series 32-bit ARMTM CortexTM-M3 based Microcontroller MB9BF504NB/RB, F505NB/RB, F506NB/RB Data Sheet Full Production Publication Number MB9BF504NB-DS706-00021 CONFIDENTIAL Revision 2.1 Issue Date January 31, 2014 D a t a S h e e t MB9BF504NB-DS706-00021-2v1-E, January 31, 2014


    Original     		PDF MB9B500B 32-bit MB9BF504NB/RB, F505NB/RB, F506NB/RB MB9BF504NB-DS706-00021 MB9BF504NB-DS706-00021-2v1-E,

    MB9B300B

    Abstract: No abstract text available
    Text: MB9B300B Series 32-bit ARMTM CortexTM-M3 based Microcontroller MB9BF304NB/RB, F305NB/RB, F306NB/RB Data Sheet Full Production Publication Number MB9BF304NB-DS706-00024 CONFIDENTIAL Revision 2.1 Issue Date January 31, 2014 D a t a S h e e t MB9BF304NB-DS706-00024-2v1-E, January 31, 2014


    Original     		PDF MB9B300B 32-bit MB9BF304NB/RB, F305NB/RB, F306NB/RB MB9BF304NB-DS706-00024 MB9BF304NB-DS706-00024-2v1-E,

    tp2350

    Abstract: J200 mosfet DK 51* transistor IRF950 TRIPATH TC2001 250w audio amplifier circuit diagram capacitor 4.7uF 100v crossover passive TRIPATH pin connection of j200 transistor TK2350
    Text: Tr i path Technol ogy, I nc. - Technical Information RB-TK2350-1 RB-TK2350-2 CLASS-T DIGITAL AUDIO AMPLIFIER REFERENCE BOARD USING DIGITAL POWER PROCESSING DPP T M TECHNOLOGY Technical Information Revision 1.5 June 2002 GENERAL DESCRIPTION The RB-TK2350 reference board is based on the TK2350 digital audio power amplifier


    Original     		PDF RB-TK2350-1 RB-TK2350-2 RB-TK2350 TK2350 RB-TK2350, RB-TK2350-1 /-21V /-39V tp2350 J200 mosfet DK 51* transistor IRF950 TRIPATH TC2001 250w audio amplifier circuit diagram capacitor 4.7uF 100v crossover passive TRIPATH pin connection of j200 transistor

    TP2350B

    Abstract: J200 mosfet tp2350 TRIPATH TC2001 TK2350 2 speakers 1 crossover amplifier pcb RB-TK2350-2 MURS120T Tripath Amplifier Tripath Technology
    Text: Tr i path Technol ogy, I nc. - Techni cal I nfor m ati on RB-TK2350-1 RB-TK2350-2 CLASS-T DIGITAL AUDIO AMPLIFIER REFERENCE BOARD USING DIGITAL POWER PROCESSING DPP T M TECHNOLOGY Technical Information Revision 2.2 November 2004 GENERAL DESCRIPTION The RB-TK2350 reference board is based on the TK2350 digital audio power amplifier chipset from


    Original     		PDF RB-TK2350-1 RB-TK2350-2 RB-TK2350 TK2350 RB-TK2350-1 /-21V /-39V /-35V TP2350B J200 mosfet tp2350 TRIPATH TC2001 2 speakers 1 crossover amplifier pcb RB-TK2350-2 MURS120T Tripath Amplifier Tripath Technology

    TA3020

    Abstract: TRIPATH TA3020 EB-TA3020 ST C212 J200 mosfet a3020 TRIPATH TECHNOLOGY TA3020 capacitor 4.7uF 100v crossover passive speaker Bridged RB-TA3020 dk qg
    Text: Tr i path Technol ogy, I nc. - Techni cal I nfor m ati on RB-TA3020-1 RB-TA3020-2 CLASS-T DIGITAL AUDIO AMPLIFIER REFERENCE BOARD USING DIGITAL POWER PROCESSING DPP T M TECHNOLOGY Technical Information Revision 3.0- March 2002 GENERAL DESCRIPTION The RB-TA3020 reference board is based on the TA3020 digital audio power


    Original     		PDF RB-TA3020-1 RB-TA3020-2 RB-TA3020 TA3020 RB-TA3020, /-21V /-39V ERG-2SJ330 TRIPATH TA3020 EB-TA3020 ST C212 J200 mosfet a3020 TRIPATH TECHNOLOGY TA3020 capacitor 4.7uF 100v crossover passive speaker Bridged RB-TA3020 dk qg

    Untitled

    Abstract: No abstract text available
    Text: 699440 High Voltage Power Darlington Transistor 699440 High Voltage Power Darlington Transistor Features • Built-in Resistor at Base-Emitter: R1 Typ. = 2000Ω • Built-in Resistor at Base: RB(Typ.) = 700±100Ω Equivalent Circuit C B RB 1 1.Base R1 TO-220


    Original     		PDF O-220

    Untitled

    Abstract: No abstract text available
    Text: 699440 High Voltage Power Darlington Transistor 699440 High Voltage Power Darlington Transistor Features • Built-in Resistor at Base-Emitter: R1 Typ. = 2000Ω • Built-in Resistor at Base: RB(Typ.) = 700±100Ω Equivalent Circuit C B RB 1 1.Base R1 TO-220


    Original     		PDF O-220

    TPS1035

    Abstract: RCA Transistor "Audio Power Amplifier" Application Note Tripath Technology 0.1u 50v 2.2uF 10V electrolytic capacitor TRIPATH TK2070 47uf, 25v electrolytic capacitor footprint amidon RESISTOR FOOTPRINT 805
    Text: Tripath Technology, Inc. – Technical Information RB-TK2070 2 X 70W CLASS-T DIGITAL AUDIO AMPLIFIER REFERENCE BOARD Technical Information- Board Rev. 2.0 Revision 1.1 – APRIL 2004 GENERAL DESCRIPTION The RB-TK2070 Revision 2.0 is a bridged stereo 70W continuous average power per channel audio


    Original     		PDF RB-TK2070 RB-TK2070 TK2070 TK2070, 680uF MURS105T3 TPS1035 TPS1035 RCA Transistor "Audio Power Amplifier" Application Note Tripath Technology 0.1u 50v 2.2uF 10V electrolytic capacitor TRIPATH 47uf, 25v electrolytic capacitor footprint amidon RESISTOR FOOTPRINT 805

    100v 200W AUDIO AMPLIFIER CIRCUIT DIAGRAM

    Abstract: TP2350B 200w car audio amplifier mosfet based ac drive ckt diagram NS 200w audio amplifier circuit diagram professional audio limiter schematics 250w audio amplifier circuit diagram Tp2350 200W Audio Amplifier with MOSFET schematic diagram professional audio power amplifier schematics
    Text: Tri pat h Tec hnol og y, I nc. - Te c hni cal I nf orm at ion RB-TDA1400 SINGLE CHANNEL CLASS-T DIGITAL AUDIO AMPLIFIER REFERENCE BOARD Technical Information–Board & Schematic Revision 4.0 Document Revision 1.3 – February 2006 GENERAL DESCRIPTION The RB-TDA1400 Reference Design is a single channel amplifier designed to provide a simple and


    Original     		PDF RB-TDA1400 RB-TDA1400 TDA1400 TDA1400, 100v 200W AUDIO AMPLIFIER CIRCUIT DIAGRAM TP2350B 200w car audio amplifier mosfet based ac drive ckt diagram NS 200w audio amplifier circuit diagram professional audio limiter schematics 250w audio amplifier circuit diagram Tp2350 200W Audio Amplifier with MOSFET schematic diagram professional audio power amplifier schematics

    FJP9100

    Abstract: NPN Transistor 600V TO-220
    Text: FJP9100 FJP9100 High Voltage Power Darlington Transistor • Built-in Resistor at Base-Emitter : R1 Typ. =2000Ω • Built-in Resistor at Base : RB(Typ.)=700 ± 100Ω TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Darlington Transistor Equivalent Circuit


    Original     		PDF FJP9100 O-220 FJP9100 NPN Transistor 600V TO-220

    J9100

    Abstract: No abstract text available
    Text: FJP9100 FJP9100 High Voltage Power Darlington Transistor • Built-in Resistor at Base-Emitter : R1 Typ. =2000Ω • Built-in Resistor at Base : RB(Typ.)=700 ± 100Ω TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Darlington Transistor Equivalent Circuit


    Original     		PDF FJP9100 O-220 FJP9100 O-220-3 FJP9100TU J9100

    IGBT based voltage source converter

    Abstract: matrix converter bi-directional switches IGBT inverters circuit diagram igbt diode matrix diagram "bi-directional switches" IGBT SiC IPM inverter circuit using IGBT module Mitsubishi SiC IPM module diode gen 52
    Text: Application Characteristics of an Experimental RB-IGBT Reverse Blocking IGBT Module E. R. Motto*, J. F. Donlon*, M. Tabata*, H. Takahashi*, Y. Yu*, G. Majumdar* * Powerex Incorporated, Youngwood, Pennsylvania, USA * Mitsubishi Electric Power Semiconductor Device Works, Fukuoka, Japan


    Original     		PDF

    2SA1406

    Abstract: 2SA1406-SPICE 2SA140
    Text: 2SA1406 SPICE PARAMETER PNP SMALL-SIGNAL TRANSISTOR model : Gummel-Poon Parameter Value Unit Parameter Value Unit IS 16.52f A ISC 53.00f A BF 170.2 NC 2.00 NF 990.0m RB 100.0m ohm VAF 40.0 V IRB 40.00m A IKF 50.85m A RBM 100.0m ohm ISE 34.34f A RE 70.00m ohm


    Original     		PDF 2SA1406 27deg 2SA1406 2SA1406-SPICE 2SA140

    Untitled

    Abstract: No abstract text available
    Text: SEfllTRON INDUSTRIES LTD M3E T> 613700^ QüOülfiñ 1 ISLCB - T ‘- 2 ' 3 » - 0 ^ SERIES Bridge Rectifiers Type* PIV per leg Average output DC RB 5/1 RB 20/1 RB 40/1 RB 80/1 RB 100/1 50 200 400 800 1000 lamp lamp lamp lamp lamp 1—11 13-1 The encapsulation in epoxy resin offers high resistance to


    OCR Scan     		PDF 1B05J05 1B10J DO-35 DO-41 DO-15 DO-201AD

    MSI Electronics 7502

    Abstract: No abstract text available
    Text: Preliminary W89C982AF X rB F E ie c iro r; ic s C orp . INTEGRATED MULTIPLE REPEATER II GENERAL DESCRIPTION. 2 FEATURES. 2


    OCR Scan     		PDF W89C982AF CAS5134, 852-27S520S4 8S6-3-579264« MSI Electronics 7502

    Untitled

    Abstract: No abstract text available
    Text: FORWARD INTCBNAHONAL ELECTRONICS LID . BC635 SEMICONDUCTOR TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS * Complement to Be636 ABSOLUTE MAXIMUM RATINGS at T«nh-2<»C Characteristic Collector-Emitter Voltage at Rb^ IK Q


    OCR Scan     		PDF BC635 Be636 300uS, 100uA 150mA 500mA 500mA 30MHz

    Untitled

    Abstract: No abstract text available
    Text: BUD742 wmmt Vishay Telefunken Silicon NPN High Voltage Switching Transistor Features • Simple-sWitch-Off Transistor SWOT • Very low dynamic saturation • HIGH SPEED technology • Very low operating temperature • Planar passivation • Optimized RB S 0 A


    OCR Scan     		PDF BUD742 BUD742 BUD742-SMD 20-Jan-99

    smd transistor ISS

    Abstract: HA 1370* ic BUD742 smd transistor 312 smd transistor JJ
    Text: w m m ▼ BUD742 f Vishay Telefunken Silicon NPN High Voltage Switching Transistor Features • Simple-sWitch-Off Transistor SWOT • Very low dynamic saturation • HIGH SPEED technology • Very low operating temperature • Planar passivation • Optimized RB S 0 A


    OCR Scan     		PDF BUD742 BUD742 BUD742-SMD 20-Jan-99 20-Jan-99 smd transistor ISS HA 1370* ic smd transistor 312 smd transistor JJ

    Untitled

    Abstract: No abstract text available
    Text: J M mm ¡¡¡f ! 2SB621.A 2SD592,A rB Hl I SILICON TRANSISTORS T O -9 2 2SB621,A PNP & 2SD592,A (NPN) are complementary silicon planar epitaxial transistors designed for AF output amplifiers. ECB ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage Collector-Emitter Voltage


    OCR Scan     		PDF 2SB621 2SD592 /2SD592 2SB621A/2SD592A