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    Samtec Inc TSW-140-08-L-D-RA-.MET

    Conn Unshrouded HDR 80 POS 2.54mm Solder RA Through Hole - Bulk (Alt: TSW-140-08-L-D-RA-)
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    Samtec Inc HSEC8-110-01-L-RA-.META

    Conn Card Edge SKT 20 POS 1.6mm Thick Card 0.8mm Solder RA SMD - Bulk (Alt: HSEC8-110-01-L-RA-)
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    Master Electronics HSEC8-110-01-L-RA-.META
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    Lumberg Automation STL 342 (LP PER A METER)

    Stl 342 (Lp Per A Meter) |Lumberg Automation STL 342 (LP PER A METER)
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    Daniels Manufacturing Corporation (DMC) HX4

    Crimpers / Crimping Tools Open Frame HandCrimp Tool HX4
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    TTI HX4 Each 1
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    RAMET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    18P4G

    Abstract: 20P2N-A M63805FP M63805KP M63805P
    Text: RY A N I MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> . . tion nge ifica to cha pec t al s subjec in f ot a are is n limits This ric ice: ramet t o N e pa Som IM REL P DESCRIPTION M63805P/FP/KP are eight-circuit Single transistor arrays. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with


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    PDF M63805P/FP/KP M63805P/FP/KP 300mA 18P4G 20P2N-A M63805FP M63805KP M63805P

    S2176

    Abstract: No abstract text available
    Text: M S2176 RF & MICROWAVE TRANSISTORS P RODUCT P REVIEW DESCRIPTION KEY FEATURES IMPORTANT: For the most current data, visit: http://www.advancedpower.com Symbol V CBO V CES V EBO IC P DISS TJ T STG ABSOLUTE MAXIMUM RATINGS TCASE = 25 C Pa rameter Collector-B ase V oltage


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    PDF S2176 MS2176 S2176

    M63816FP

    Abstract: 18P4G 20P2N-A M63816KP M63816P
    Text: RY A N I . . tion nge ifica to cha pec t al s subjec in f ot a are is n limits This ric ice: ramet t o N e pa Som MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63816P/FP/KP IM REL P 8-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63816P/FP/KP are eight-circuit Single transistor arrays


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    PDF M63816P/FP/KP 300mA M63816P/FP/KP M63816FP 18P4G 20P2N-A M63816KP M63816P

    opr12

    Abstract: crt monitor block diagram crt monitor circuit diagram sub preamp 36P4E M52742ASP M52742SP SW11
    Text: MITSUBISHI ICs Monitor INARY M I L E PR M52742ASP n. cificatio change. nal spe not a fi are subject to is is h s Notice:T rametric limit pa Some BUS CONTROLLED 3-CHANNEL VIDEO PREAMP FOR CRT DISPLAY MONITOR DESCRIPTION M52742ASP is semiconductor integrated circuit for CRT display


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    PDF M52742ASP M52742ASP M52tput 15kHz, 30kHz, 64kHz, opr12 crt monitor block diagram crt monitor circuit diagram sub preamp 36P4E M52742SP SW11

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> RY A N I M63813P/FP/GP/KP . . tion nge ifica to cha pec t al s subjec in f ot a are is n limits This ric ice: ramet t o N e pa Som IM REL P 7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63813P/FP/GP/KP are seven-circuit Single transistor arrays with clamping diodes. The circuits are made of NPN


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    PDF M63813P/FP/GP/KP 300mA M63813P/FP/GP/KP

    Untitled

    Abstract: No abstract text available
    Text: RY A N I . . tion nge ifica to cha pec t al s subjec in f ot a are is n limits This ric ice: ramet t o N e pa Som MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63816P/FP/KP IM REL P 8-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63816P/FP/KP are eight-circuit Single transistor arrays


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    PDF M63816P/FP/KP 300mA M63816P/FP/KP

    18P4G

    Abstract: 20P2N-A M63806FP M63806KP M63806P
    Text: RY A N I MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> . . tion nge ifica to cha pec t al s subjec in f ot a are is n limits This ric ice: ramet t o N e pa Som IM REL P DESCRIPTION M63806P/FP/KP are eight-circuit Single transistor arrays. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with


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    PDF M63806P/FP/KP M63806P/FP/KP 300mA 18P4G 20P2N-A M63806FP M63806KP M63806P

    18P4G

    Abstract: 20P2N-A M63815FP M63815KP M63815P
    Text: RY A N I . . tion nge ifica to cha pec t al s subjec in f ot a are is n limits This ric ice: ramet t o N e pa Som MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63815P/FP/KP IM REL P 8-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63815P/FP/KP are eight-circuit Single transistor arrays


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    PDF M63815P/FP/KP 300mA M63815P/FP/KP 18P4G 20P2N-A M63815FP M63815KP M63815P

    M37735M4LXXXHP

    Abstract: No abstract text available
    Text: Y NAR I MITSUBISHI MICROCOMPUTERS M37735M4LXXXHP . e n. atio chang cific o spe bject t l a fin re su a ot a is n limits his e: T rametric ic t No e pa Som IM REL P SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER DESCRIPTION ●Interrupts . 19 types, 7 levels


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    PDF M37735M4LXXXHP 16-BIT q10-bit q12-bit H-LF462-A KI-9612 M37735M4LXXXHP

    18P4G

    Abstract: 20P2N-A M63817FP M63817KP M63817P
    Text: RY A N I . . tion nge ifica to cha pec t al s subjec in f ot a are is n limits This ric ice: ramet t o N e pa Som MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63817P/FP/KP IM REL P 8-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63817P/FP/KP are eight-circuit Single transistor arrays


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    PDF M63817P/FP/KP 300mA M63817P/FP/KP 18P4G 20P2N-A M63817FP M63817KP M63817P

    M63814FP

    Abstract: M63814GP M63814KP M63814P
    Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> RY A N I M63814P/FP/GP/KP . . tion nge ifica to cha pec t al s subjec in f ot a are is n limits This ric ice: ramet t o N e pa Som IM REL P 7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63814P/FP/GP/KP are seven-circuit Single transistor arrays with clamping diodes. The circuits are made of NPN


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    PDF M63814P/FP/GP/KP 300mA M63814P/FP/GP/KP M63814FP M63814GP M63814KP M63814P

    18P4G

    Abstract: 20P2N-A M63807FP M63807KP M63807P
    Text: RY A N I MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> . . tion nge ifica to cha pec t al s subjec in f ot a are is n limits This ric ice: ramet t o N e pa Som IM REL P DESCRIPTION M63807P/FP/KP are eight-circuit Single transistor arrays. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with


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    PDF M63807P/FP/KP M63807P/FP/KP 300mA 18P4G 20P2N-A M63807FP M63807KP M63807P

    GP 015 DIODE

    Abstract: GP 005 DIODE GP 250 DIODE M63813FP M63813GP M63813KP M63813P
    Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> RY A N I M63813P/FP/GP/KP . . tion nge ifica to cha pec t al s subjec in f ot a are is n limits This ric ice: ramet t o N e pa Som IM REL P 7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63813P/FP/GP/KP are seven-circuit Single transistor arrays with clamping diodes. The circuits are made of NPN


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    PDF M63813P/FP/GP/KP 300mA M63813P/FP/GP/KP GP 015 DIODE GP 005 DIODE GP 250 DIODE M63813FP M63813GP M63813KP M63813P

    crt monitor circuit diagram

    Abstract: crt monitor block diagram SG6 equivalent sub preamp M52742SP M52745SP SW11 free circuit diagram of Crt Monitor
    Text: MITSUBISHI ICs Monitor INARY M I L E PR n. cificatio change. nal spe not a fi are subject to is is h s Notice:T rametric limit pa Some M52745SP BUS CONTROLLED 3-CHANNEL VIDEO PREAMP FOR CRT DISPLAY MONITOR DESCRIPTION M52745SP is semiconductor integrated circuit for CRT display


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    PDF M52745SP M52745SP 15kHz, 30kHz, 64kHz, crt monitor circuit diagram crt monitor block diagram SG6 equivalent sub preamp M52742SP SW11 free circuit diagram of Crt Monitor

    X2804

    Abstract: No abstract text available
    Text: KSK DATA SHEET SUPPLEMENT 4K Mil-Std-883C X2804AMB 5 1 2 x 8 Bit Electrically Erasable PROM A.C. AND O.C. REQUIREMENTS FOR CHIP ERASE With the exception of Voe . all device A.C. and D.C. pa­ rameters are the same as those for normal operation. The X2804AMB provides a mode of operation that


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    PDF X2804AMB MiiStd-883C Mil-Std-883C X2804

    X2816BMB

    Abstract: X2816BM X2816B
    Text: Xiar. D ATA S H EET S U P PLEM EN T 16K Mil-Std-883C X2816BMB 2 04 8 x8 Bit Electrically Erasable PROM With the exception of V q e . all device A.C. and D.C. pa­ rameters are the same as those for normal operation. A.C. AND D.C. REQUIREMENTS FOR CHIP ERASE


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    PDF X2816BMB MilStd-883C Mil-Std-883C X2816BM X2816B

    KF-38G

    Abstract: 160KD L 1L2 TEA ic
    Text: 8. ELECTRICAL Absolute CHARACTERISTICS Maximum Ratino Ta - 25 C Symbo1 Pa ramete r Cond it ion Rat ing Un it Power supply voltage V DD -0.3 to *7.0 V Input voltage Vl -0.3 to V d d +0.3 V O u tp ut v o 1tage V0 -0.3 to V D D +0.3 V Si ng le output ’o h


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    PDF

    0G015

    Abstract: X2816BMB
    Text: XICOR INC TS 99 41 74 3 X I C O R 1^1^41743 0G015D0 □ 95D INC T - ¥4 -/3 -27 DATA SHEET SUPPLEMENT Mil-Std-883C 16K 01500 D W i 2048 x 8 Bit X2816BMB Electrically Erasable PROM With the exception of Voe . a11device A.C. and D.C. pa­ rameters are the same as those for normal operation.


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    PDF 0G015D0 Mil-Std-883C X2816BMB X2816BMB MilStd-883C 0G015

    texas instruments tip32

    Abstract: tip 31c til 31a texas instruments tip31 TIP31C
    Text: TYPES TIP31, TIP31A, TIP31B. TIP31C N-P-N SINGLE-DIFFUSED M ESA SILICON POWER TRANSISTORS 3JCDH m C -< FOR POWER-AMPi-IFIER AND HIGH-SPEED-SWITCHING APPLICATIONS DESIGNED FOR COMPLEMENTARY USE WITH TIP32, TIP32A, TIP32B, TIP32C u r T> r r m > mw J jH • 40 W at 25°C Case Temperature


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    PDF TIP31, TIP31A, TIP31B. TIP31C TIP32, TIP32A, TIP32B, TIP32C texas instruments tip32 tip 31c til 31a texas instruments tip31

    2N5157

    Abstract: No abstract text available
    Text: TYPE 2N5157 N-P-N SILICON POWER TRANSISTOR • 100 W at 75° C Case Temperature • 700 V Collector-Emitter Off-State Voltage • Min V BR CEO of 400 V • Max t0ff of 1.7 /is at lc = 1 A • Typ VcE(sat) of 0.3 V at lc = 3.5 A • Typ f r of 5 MHz at 12 V , 0.2 A


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    PDF 2N5157

    74ls463

    Abstract: 74LS462
    Text: TTL MSI T Y P E S S N 7 4 L S 4 6 2 , S N 74 L S 4 6 3 F IB E R - O P T I C D A T A - L I N K C O N T R O L L E R S AU G U S T 1979 Inexpensive, Reliable Alternative to Conventional Copper-Wire Systems • Single 5-Volt Supply • Inputs and Outputs Compatible with TTL and Low-Level MOS


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    PDF 16-Bit 20-Pin 300-Mil SN74LS462 SN74LS462, SN74LS463 74ls463 74LS462

    Linear Regulator sot-89-5

    Abstract: No abstract text available
    Text: TK11900 Power Conversion ICs ADJUSTABLE LOW DROPOUT REGULATOR FEATURES APPLICATIONS • Low Supply Current ■ Portable Instrumentation ■ Low Power Shutdown Mode ■ Cordless Telephones ■ Low Noise Output ■ Pagers ■ Low Drop Out Voltage ■ Toys ■


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    PDF TK11900 TK11900 OT-23L OT89-5. Linear Regulator sot-89-5

    Untitled

    Abstract: No abstract text available
    Text: TK119xx Power Conversion ICs VOLTAGE REGULATOR WITH RESET OUTPUT FEATURES APPLICATIONS • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Very Low Dropout Voltage Reset Output for Microprocessor Very Low Quiescent Current No Load Internal Thermal / Overload Shutdown


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    PDF TK119xx TK119

    M44C260

    Abstract: M48C260 0014D1 EPI EEPROM CPU AGB A
    Text: Tem ic M48C260 TELEFUNKEN Semiconductors MARC4 - 4-bit Microcontroller The M48C260 is a member of the TEMIC family of 4-bit single chip microcontrollers. It is the user programmable version of the M44C260. It contains EEPROM program memory, RAM, EEPROM data memory, parallel I/O ports,


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    PDF m48c260 M48C260 M44C260. 8/16-bit D-74025 0D14034 M44C260 0014D1 EPI EEPROM CPU AGB A