upd23c8000
Abstract: upd4502161 uPD23C8000X uPD4504161 *D431016 uPD23C16000
Text: MENU INDEX QUESTIONNAIRE Dynamic RAM Dynamic RAM Module Static RAM Mask ROM Flash Memory COMBO Memory MCP Flash memory and SRAM Application Specific Memory Users Manual, Application Notes, Information Related References MENU Synchronous DRAM 128M synchronous DRAM -PC100 compliant64M synchronous DRAM -PC100 compliant64M synchronous DRAM (x32) -PC100 compliant16M synchronous DRAM (Revision A)
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-PC100
compliant64M
compliant16M
168-pin
16-bit,
upd23c8000
upd4502161
uPD23C8000X
uPD4504161
*D431016
uPD23C16000
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PD23C64020
Abstract: PD45D128442 4M84 PD45D128842 256M5 0443 IC PD23C64000AL 45V16A PD264 A80L
Text: IC Memory CD-ROM IC Memory CD-ROM X13769XJ2V0CD00 04-1 IC Memory Dynamic RAM • Synchronous DRAM: SDR Single Data Rate , 256M bits (x4 bits organization) Density (bits) Organization (words × bits × banks) Part number 256M★ 16M×4×4 µ PD45256441 Speed
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X13769XJ2V0CD00
A10BL
8K/64
256M5
PD45256441
54-pin
PC133
PC100
MC-22000
PD23C64020
PD45D128442
4M84
PD45D128842
0443 IC
PD23C64000AL
45V16A
PD264
A80L
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RDRAM Clock
Abstract: No abstract text available
Text: VIS Preliminary VG5612816AU VG5614418AU 128Mb/144Mb Direct Rambus Dynamic RAM Overview The Rambus Direct RDRAM is a general purpose highperformance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high bandwidth and
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VG5612816AU
VG5614418AU
128Mb/144Mb
128/144-Mbit
800MHz
1G5-0159
RDRAM Clock
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L24002
Abstract: NAND "read disturb" 1GB Toshiba 512 NAND MLC FLASH BGA PC133 registered reference design CMOS 0.8mm process cross Lithium battery CR2025 sony M2V28S30AVP M5M51008CFP
Text: Future On Chips MITSUBISHI SEMICONDUCTORS MITSUBISHI ELECTRIC CORPORATION ULSI Memory Memory Series Series ULSI RAM/MCP/FLASH New Data Package http://www.mitsubishichips.com Jul. 2000 MITSUBISHI ELECTRIC L-11002-01 CONTENTS General Business Operation Network and Production Facilities
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L-11002-01
64MDRAM
64MSDRAM
128MSDRAM
256MSDRAM
144MRDRAM
L24002
NAND "read disturb" 1GB
Toshiba 512 NAND MLC FLASH BGA
PC133 registered reference design
CMOS 0.8mm process cross
Lithium battery CR2025 sony
M2V28S30AVP
M5M51008CFP
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sandisk micro sd card pin
Abstract: MCP 1Gb nand 512mb dram 130 256K x 16 DRAM FPM cross reference Toshiba NAND MLC FLASH BGA TSOP 48 Package nand memory toshiba MCP 1Gb 512Mb 130 PC133 registered reference design L7103 02bjxx ulsi
Text: Future On Chips MITSUBISHI SEMICONDUCTORS MITSUBISHI ELECTRIC CORPORATION ULSI Memory Memory Series Series ULSI RAM/MCP/FLASH New Data Package http://www.mitsubishichips.com Jul. 2000 L-11002-01 MITSUBISHI ELECTRIC CONTENTS 1. General 1 2. DRAM 9 3. Low Power SRAM
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L-11002-01
L-11003-0I
sandisk micro sd card pin
MCP 1Gb nand 512mb dram 130
256K x 16 DRAM FPM cross reference
Toshiba NAND MLC FLASH BGA
TSOP 48 Package nand memory toshiba
MCP 1Gb 512Mb 130
PC133 registered reference design
L7103
02bjxx
ulsi
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Untitled
Abstract: No abstract text available
Text: Virtex -E 1.8 V Extended Memory Field Programmable Gate Arrays R DS025 v1.1 August 1, 2000 Preliminary Product Specification Features • • Fast, Extended Block RAM, 1.8 V FPGA Family - 560 kb and 1,120 kb embedded block RAM - 130 MHz internal performance (four LUT levels)
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DS025
32/64-bit,
33/66-MHz
XCV405E-6BG560C
BG560
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Untitled
Abstract: No abstract text available
Text: Virtex -E 1.8 V Extended Memory Field Programmable Gate Arrays R DS025-1 v1.5 July 17, 2002 Production Product Specification Features • • • • Fast, Extended Block RAM, 1.8 V FPGA Family - 560 Kb and 1,120 Kb embedded block RAM - 130 MHz internal performance (four LUT levels)
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DS025-1
32/64-bit,
33/66-MHz
XCV405E
XCV812E
DS025-1,
DS025-3,
DS025-2,
DS025-4,
DS025-4
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digital dice design VHDL
Abstract: No abstract text available
Text: Virtex -E 1.8 V Extended Memory Field Programmable Gate Arrays R DS025-1 v1.5 July 17, 2002 Production Product Specification Features • • • • Fast, Extended Block RAM, 1.8 V FPGA Family - 560 Kb and 1,120 Kb embedded block RAM - 130 MHz internal performance (four LUT levels)
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DS025-1
32/64-bit,
33/66-MHz
XCV405E
XCV812E
DS025-1,
DS025-3,
DS025-2,
DS025-4,
DS025-4
digital dice design VHDL
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FG900
Abstract: AN1555
Text: Virtex -E 1.8 V Extended Memory Field Programmable Gate Arrays R DS025-1 v1.4 April 2, 2001 Preliminary Product Specification Features • • • • Fast, Extended Block RAM, 1.8 V FPGA Family - 560 Kb and 1,120 Kb embedded block RAM - 130 MHz internal performance (four LUT levels)
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DS025-1
32/64-bit,
33/66-MHz
DS025-4
DS025-1,
DS025-3,
DS025-2,
DS025-4,
FG900
AN1555
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FG676
Abstract: XCV405E XCV405E-6BG560C XCV812E
Text: Virtex -E 1.8 V Extended Memory Field Programmable Gate Arrays R DS025-1 v1.4 April 2, 2001 Preliminary Product Specification Features • • • • Fast, Extended Block RAM, 1.8 V FPGA Family - 560 Kb and 1,120 Kb embedded block RAM - 130 MHz internal performance (four LUT levels)
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DS025-1
32/64-bit,
33/66-MHz
DS025-1,
DS025-2,
DS025-3,
DS025-4,
FG676
XCV405E
XCV405E-6BG560C
XCV812E
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AM3 Processor Functional Data Sheet
Abstract: synopsys Platform Architect DataSheet FG676 XCV405E XCV405E-6BG560C XCV812E AF124
Text: Virtex -E 1.8 V Extended Memory Field Programmable Gate Arrays R DS025-1 v1.5 July 17, 2002 Production Product Specification Features • • • • Fast, Extended Block RAM, 1.8 V FPGA Family - 560 Kb and 1,120 Kb embedded block RAM - 130 MHz internal performance (four LUT levels)
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DS025-1
32/64-bit,
33/66-MHz
DS025-1,
DS025-2,
DS025-3,
DS025-4,
DS025-4
AM3 Processor Functional Data Sheet
synopsys Platform Architect DataSheet
FG676
XCV405E
XCV405E-6BG560C
XCV812E
AF124
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PDF
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Untitled
Abstract: No abstract text available
Text: Virtex -E 1.8 V Extended Memory Field Programmable Gate Arrays R DS025-1 v1.4 April 2, 2001 Preliminary Product Specification Features • • • • Fast, Extended Block RAM, 1.8 V FPGA Family - 560 Kb and 1,120 Kb embedded block RAM - 130 MHz internal performance (four LUT levels)
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DS025-1
32/64-bit,
33/66-MHz
DS025-4
DS025-1,
DS025-3,
DS025-2,
DS025-4,
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transistor tt 2222
Abstract: TT 2222 Horizontal Output Transistor pins out tt 2222 Datasheet TT 2222 Horizontal Output voltage FG676 XCV405E XCV405E-6BG560C XCV812E AB244 N203
Text: Virtex -E 1.8 V Extended Memory Field Programmable Gate Arrays R DS025-1 v1.4 April 2, 2001 Preliminary Product Specification Features • • • • Fast, Extended Block RAM, 1.8 V FPGA Family - 560 Kb and 1,120 Kb embedded block RAM - 130 MHz internal performance (four LUT levels)
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DS025-1
32/64-bit,
33/66-MHz
XCV405E
XCV812E
DS025-1,
DS025-2,
DS025-3,
DS025-4,
DS025-4
transistor tt 2222
TT 2222 Horizontal Output Transistor pins out
tt 2222 Datasheet
TT 2222 Horizontal Output voltage
FG676
XCV405E-6BG560C
AB244
N203
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XCV812E
Abstract: PCI33 XCV405E FG676 ah55 C2G6 AF124
Text: Virtex -E 1.8 V Extended Memory Field Programmable Gate Arrays R DS025 v1.2 September 19, 2000 Preliminary Product Specification Features • • • • Fast, Extended Block RAM, 1.8 V FPGA Family - 560 kb and 1,120 kb embedded block RAM - 130 MHz internal performance (four LUT levels)
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DS025
32/64-bit,
33/66-MHz
BG560
FG676
XCV405E,
XCV812E
PCI33
XCV405E
ah55
C2G6
AF124
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ram memory rambus
Abstract: FG676 0.18 um CMOS 556 cmos TEX-E XCV405E XCV405E-6BG560C XCV812E memory bandwidth
Text: Virtex -E 1.8 V Extended Memory Field Programmable Gate Arrays R DS025-1 v1.5 July 17, 2002 Production Product Specification Features • • • • Fast, Extended Block RAM, 1.8 V FPGA Family - 560 Kb and 1,120 Kb embedded block RAM - 130 MHz internal performance (four LUT levels)
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DS025-1
32/64-bit,
33/66-MHz
DS025-1,
DS025-2,
DS025-3,
DS025-4,
ram memory rambus
FG676
0.18 um CMOS
556 cmos
TEX-E
XCV405E
XCV405E-6BG560C
XCV812E
memory bandwidth
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Untitled
Abstract: No abstract text available
Text: Virtex -E 1.8 V Extended Memory Field Programmable Gate Arrays R DS025 v1.3 November 20, 2000 Preliminary Product Specification Features • • • • Fast, Extended Block RAM, 1.8 V FPGA Family - 560 Kb and 1,120 Kb embedded block RAM - 130 MHz internal performance (four LUT levels)
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DS025
32/64-bit,
33/66-MHz
FG676
XCV405E,
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sdram pcb layout ddr
Abstract: MB81P643287 ram memory rambus 86-PIN FCRAM
Text: High-End Memory for High-End Graphics 64M x32 DDR-SDRAM with Fast-Cycle RAM Core Technology–MB81P643287 ▲ Features • Double Data Rate (DDR) • Superset of DDR JEDEC standard • CMOS 8-bank x 256K-word x 32-bit Fast-Cycle Random Access Memory with DDR
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MB81P643287
256K-word
32-bit
86-pin
MP-FS-20825-10/99
sdram pcb layout ddr
MB81P643287
ram memory rambus
FCRAM
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Untitled
Abstract: No abstract text available
Text: — OBSOLETE — OBSOLETE — OBSOLETE — OBSOLETE — Virtex -E 1.8 V Extended Memory Field Programmable Gate Arrays R DS025-1 v3.0 March 21, 2014 Production Product Specification Features • • • • Fast, Extended Block RAM, 1.8 V FPGA Family - 560 Kb and 1,120 Kb embedded block RAM
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DS025-1
32/64-bit,
33/66-MHz
extV812E
XCN12026.
DS025-1,
DS025-2,
DS025-3,
DS025-4,
DS025-4
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ATIC 164 D2 44 pin
Abstract: No abstract text available
Text: Target KMMR16R4GC/KMMR18R4GC 128/144MB RAMBUS INTERFACE MEMORY MODULE GENERAL DESCRIPTION FEATURES The Direct Ram bus RIM M ™ module is general purpose high-per- • Perform ance range form ance memory subsystem suitable for use in a broad range of Part No.
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KMMR16R4GC/KMMR18R4GC
128/144MB
18bits.
600MHz
800MHz
KM416RD4C
KM418RD4C
ATIC 164 D2 44 pin
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ATIC 164 D2 44 pin
Abstract: No abstract text available
Text: Target KMMR16R48C/KMMR18R48C 64/72MB RAMBUS INTERFACE MEMORY MODULE GENERAL DESCRIPTION FEATURES The Direct Ram bus RIM M ™ module is general purpose high-per- • Perform ance range form ance memory subsystem suitable for use in a broad range of Part No.
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KMMR16R48C/KMMR18R48C
64/72MB
18bits.
600MHz
800MHz
KM416RD4C
KM418RD4C
ATIC 164 D2 44 pin
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PDF
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Untitled
Abstract: No abstract text available
Text: Target KMMR16R4GC/KMMR18R4GC 128/144MB RAMBUS INTERFACE MEMORY MODULE GENERAL DESCRIPTION FEATURES The Direct Ram bus RIM M ™ module is general purpose high-per- • Perform ance range form ance memory subsystem suitable for use in a broad range of Part No.
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KMMR16R4GC/KMMR18R4GC
128/144MB
R16R4GC-G6
600MHz
KMMR16R4GC-K8
800MHz
KMMR16R4GC-M
R18R4GC-G6
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ATIC 164 D2 44 pin
Abstract: No abstract text available
Text: Target KMMR16R48C/KMMR18R48C 64/72MB RAMBUS INTERFACE MEMORY MODULE GENERAL DESCRIPTION FEATURES The Direct Ram bus RIM M ™ module is general purpose high-per- • Perform ance range form ance memory subsystem suitable for use in a broad range of Part No.
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KMMR16R48C/KMMR18R48C
64/72MB
MR16R48C-G6
600MHz
KMMR16R48C-K8
800MHz
KMMR16R48C-M8
MR18R48C-G6
ATIC 164 D2 44 pin
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UPD482445LGW-A70
Abstract: graphics NEC rambus dram ram-2 NEC Rambus
Text: Part Number Dual Port Graphics Buffer No Letter : 5.0 V L-A : 3.3 V /¿PD48 2 4 4 5 L GW - A 70 NEC CMOS-1 Application Specific Memory Device code-1 : Graphics RAM 2 : Dual Port Graphics Bu 5 : Line Buffer 8 : Rambus DRAM Capacity-2: 2M bits
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uPD482445LGW-A70
e--------------60:
ction---------------------------------505
16bits/1OK
time----------------------------25
100-pin
graphics
NEC rambus dram
ram-2
NEC Rambus
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Untitled
Abstract: No abstract text available
Text: TOSHIBA T E N T A T IV E TC59RM716 8 MB/RB-8,-7,-6 T O S H IB A M O S D IG IT A L IN T E G R A T E D C IR C U IT S IL IC O N M O N O L IT H IC Overview The Direct Ram bus DRAM (Direct RDRAM™ ) is a general-purpose high performance memory device suitable
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TC59RM716
128/144-Mbit
600-MHz
800-MHz
a80AZ
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