S1D15605
Abstract: Display Controller S1D15206 S1D15B01 Acc 2089 S1D15202F yd 2030 ic 5 pins S1D15202F00A s1d15208f op amp ua 743
Text: MF424-21 S1D15000 Series Technical Manual IEEE1394 LCD driverController with RAM S1R75801F00A S1D15000 Series Technical Manual S1D15000 Series Technical Manual ELECTRONIC DEVICES MARKETING DIVISION EPSON Electronic Devices Website http://www.epson.co.jp/device/
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MF424-21
S1D15000
IEEE1394
S1R75801F00A
i8088
i8086
S1D15605
Display Controller
S1D15206
S1D15B01
Acc 2089
S1D15202F
yd 2030 ic 5 pins
S1D15202F00A
s1d15208f
op amp ua 743
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Z86C1200ZEM
Abstract: Z86E61 Z86E63
Text: Z86E61/E63 CPS DC-4164-03 Z86E61 AND Z86E63 CMOS Z8 OTP MICROCONTROLLER GENERAL DESCRIPTION The Z86E61 is a member of the Z8 ® single-chip microcontroller family with 16 Kbytes of EPROM and 236 bytes of general-purpose RAM and the Z86E63 has 32K bytes of EPROM.
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Z86E61/E63
DC-4164-03
Z86E61
Z86E63
Z86E63
Z86E61/63
Z86C61/63.
Z86E61/63
Z86C1200ZEM
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Untitled
Abstract: No abstract text available
Text: August 1993 Edition 1.0 FUJITSU DATA SHEET : M B 8 18 25 5- 70 /- 80 2097,152 Bits 2 6 2 ,1 4 4 x 8 Bits Multi-port CMOS Dynamic RAM The Fujitsu M B 818255 is a fully decoded dual port C MOS D ynam ic RAM (DRAM) 256K words by 8 bits random access parallel port ana 512 w ords by 8 bits Static RAM (SRAM)
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40-pin
44-pin
MB818255-70
MB818255-80
44-LEAD
FPT-44Pâ
F44016S-1C
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sense amplifier bitline memory device
Abstract: F4164 F4164-1 F4164-2 F4164-3
Text: F 4164 6 5 ,5 3 6 x 1 Dynamic RAM MOS Memory Products Logic Symbol Description The F4 1 6 4 is a dynamic Random A c c e s s Memory RAM circuit organized a s 6 5 ,5 3 6 single-bit words. This memory u ses the Fairchild advanced double poly NMOS, Isoplanar-H p ro cess which allows
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F4164
F4164
sense amplifier bitline memory device
F4164-1
F4164-2
F4164-3
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TMS4C1024DJ
Abstract: TMS4C1024 TM024EAD9 8192K
Text: TM024EAD9 1,048,576 BY 9-BIT DYNAMIC RAM MODULE TM024GAD8 1,048,576 BY 8-BIT DYNAMIC RAM MODULE 0=1^1725 0 G 7 7 1 G 4 T - ^-23-/7 b JULY 1967—REVISED MAY 1988 Modules TM024EAD9 . . . AD SMGLE-M-UNE PACKAGE TOP VIEW TM024EAD9 . . . 1,048,676 x 9 Organization
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TM024EAD9
TM024GAD8
TM024EAD9
TM024GAD8
30-pln
TMS4C1024DJ
TMS4C1024
8192K
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LS Is <DRAM MODULE MH4M724CTJ-6,-7 FAST PAGE MODE 301989888-BIT 4194304-WQRD BY 72-BIT) DYNAMIC RAM DESCRIPTION The MH4M724CTJ is 4194304-word x 72-bit dynamic RAM module. This consists of eighteen industry standard 4M x 4 dynamic RAMs in TSOP and two industry standard input
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MH4M724CTJ-6
301989888-BIT
4194304-WQRD
72-BIT)
MH4M724CTJ
4194304-word
72-bit
MH4M724CTJheir
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adei
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 32K x 36 Bit Flow-Through BurstRAM Synchronous Fast Static RAM The MCM69F536C is a 1M bit synchronous fast static RAM designed to pro vide a burstable, high performance, secondary cache for the 68K Family, PowerPC™, 486, i960™, and Pentium™ microprocessors. It is organized as 32K
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MCM69F536C
i960TM,
69F536C
MCM69F536CTQ8
MCM69F536CTQ9
MCM69F536CTQ10
MCM69F536CTQ12
MCM69F536CTQ9R
adei
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4164-12
Abstract: NEC 4164 PD4164 4164-10 LPD416
Text: NEC |jl,PD4164 6 5,536 x 1-BIT DYNAMIC NMOS RAM NEC Electronics Inc. Revision 4 Description Pin Configuration The N EC J.PD4164 is a 65,536-word by 1-bit dynamic N-channel MOS R andom -access M em ory (RAM designed to operate from a single + 5V power supply. The negativevoltage substrate bias is internally generated providing both
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uPD4164
536-word
M-PD4164
PD4164
fxPD4164
4164-12
NEC 4164
4164-10
LPD416
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D4164
Abstract: D4164 RAM nec D4164-15 4164 ram ram D4164 NEC 4164 D4164-15 pd4164 RAM 4164 4164-15
Text: NEC |jlPD4164 65,536x1-BIT DYNAMIC NMOS RAM NEC Electronics Inc. Revision 4 D e s c rip tio n The NEC H-PD4164 is a 65,536-word by 1-bit dynamic N-channel MOS Random-access Memory RAM designed to operate from a single + 5V power supply. The negativevoltage substrate bias is internally generated providing both
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536x1-BIT
uPD4164
536-word
PD4164
xPD4164
D4164
D4164 RAM
nec D4164-15
4164 ram
ram D4164
NEC 4164
D4164-15
RAM 4164
4164-15
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LS Is DRAM MODULE MH8M40AJD-6,-7 FAST PAGE MODE 335544320-BIT (8388608-WQRD BY 40-BIT) DYNAMIC RAM DESCRIPTION The M H 8M 40A JD is 8388608-w ord x 40-bit dynamic RAM. PIN CONFIGURATION (TOP VIEW) (Both side, 2-Layer] This consists o f tw e n ty industry standard 4M x 4 dynamic
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MH8M40AJD-6
335544320-BIT
8388608-WQRD
40-BIT)
8388608-w
40-bit
40AJD
8388608-WORD
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4164-12
Abstract: DP8409 DMPAL16R6 ns16032
Text: DP84312 Dynamic Memory Support £51 National ÉlA Semiconductor PRELIMINARY DP84312 Dynamic RAM Controller Interface Circuit for the NS16032 CPU General Description Features The DP84312 dyn am ic RAM c o n tro lle r in te rfa c e Is a Pro gram m able A rray Logic PAL * device w h ic h a llo w s to r
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DP84312
DP84312
NS16032
DP8409
NS16201
NS16032,
4164-12
DMPAL16R6
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LS Is <DRAM MODULE M H4M724CTJ-6,-7 FAST PAGE MODE 301989888-BIT 4194304-WORD BY 72-BIT) DYNAMIC RAM DESCRIPTION The M H 4M 724C TJ is 4 1 94304-w ord x 72-bit dynamic RAM module. This consists o f eighteen industry standard 4M x 4 dynamic RAMs in TSOP and tw o industry standard input
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H4M724CTJ-6
301989888-BIT
4194304-WORD
72-BIT)
94304-w
72-bit
MH4M724CTJ-6
MH4M724CTJ-7
D030715
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs M 5 M 4 1 7 8 0 0 A J ,T P - 6 ,- 7 ,- 6 S ,- 7 S FAST PAGE MODE 16777216-BIT { 2097152-WORD BY 8-BIT DYNAMIC RAM DESCRIPTION This is a family of 2097152-w o rd by 8-bit dynamic RAM S, fabricated with the high performance C M O S process,and is ideal
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16777216-BIT
2097152-WORD
2097152-w
M5M417800AJ
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K4164
Abstract: 5k4164 block stsu 536-WORD RAC120 M5K4116P msk4164 M5K4164AND-12 M5K4164AND-15 K4164A
Text: M ITSU B ISH I L S Is M5K4164AND-12, -15 6 5 5 3 6 -B IT 6 5 536-W O RD B Y 1-BIT DYNAMIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) This is a fa m ily o f 6 5 5 3 6 -w o rd b y 1-bit d y n a m ic RAM s, fa b ric a te d w ith the high pe rform ance N-channel silicongate
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M5K4164AND-12,
536-BIT
536-WORD
18-pin
M5K4164AND
K4164
5k4164
block stsu
RAC120
M5K4116P
msk4164
M5K4164AND-12
M5K4164AND-15
K4164A
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M5K4164AL-12
Abstract: M5K4164AL-15 CSH120 M5K4164
Text: M ITSUBISHI L SIs M5K4164AL-12, -15 6 5 5 3 6 -B IT 6 5 536-W O RD BY 1-BIT DYNAMIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) This is a fa m ily o f 6 5 5 3 6 -w o rd b y 1 -b it d y n a m ic RAM s, fa b ric a te d w ith th e high p e rfo rm a n ce N -channel silicongate
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M5K4164AL-12,
536-BIT
536-WORD
16-pin
M5K4164AL
M5K4164AL-12
M5K4164AL-15
CSH120
M5K4164
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Untitled
Abstract: No abstract text available
Text: TM4164EL9, TM4164FM9 65,536 BY 9-BIT DYNAMIC RAM MODULES NOVEMBER 1983 - 6 5 ,5 3 6 X 9 Organization REVISED NOVEMBER 1985 TM 4164EL9 . . . L SINGLE-IN-LINE PACKAGE * T M 4 1 6 4 F M 9 . . . M SINGLE-IN-LINE PACKAGE Single 5-V Supply 10% Tolerance ITOP VIEW)
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TM4164EL9,
TM4164FM9
30-Pin
4164EL9
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IC 4164
Abstract: 4164-2 RAM 4164 ram 4164 ram mos 4164 4164-2 HYB4164 RAM 4164 4164 eve
Text: SIEM EN S HYB 4164-1, HYB 4164-2, HYB 4164-3 65,536-Bit Dynamic Random Access Memory RAM • 65,536 X1 bit organization • All inputs and outputs T T L com patible • Industry standard 16-pin JE D E C configuration • High over- and undershooting capability
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536-Bit
16-pin
iPin12)
HYB41
IC 4164
4164-2 RAM
4164 ram
4164
ram mos 4164
4164-2
HYB4164
RAM 4164
4164 eve
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M5K4164ANP
Abstract: 2164 dynamic ram mcm6665 block stsu Intel 2164 DYNAMIC RAM 65536 M5K4164ANP-20 6665 RAM msk4164 RASH
Text: M IT S U B IS H I LS Is M5K4164ANP-20 6 5 53 6 -B IT 65536-W O RD BY 1-BIT DYNAMIC RAM DESCRIPTION PIN C O N F IG U R A T IO N (TOP V IEW ) This is a fa m ily o f 6 5 5 3 6 -w o rd b y 1-bit d y n a m ic RAM s, fa b rica te d w ith the high p e rform ance N-channel silicongate
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M5K4164ANP-20
65536-BIT
65536-WORD
16-pin
M5K4164ANP
2164 dynamic ram
mcm6665
block stsu
Intel 2164
DYNAMIC RAM 65536
M5K4164ANP-20
6665 RAM
msk4164
RASH
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Untitled
Abstract: No abstract text available
Text: TM4164EL9, TM4164FM9 65,536 BY 9-BIT DYNAMIC RAM MODULES NOVEMBER 1 9 8 3 - 6 5 ,5 3 6 X 9 Organization REVISED NOVEMBER 1 9 8 5 TM 4164E L9 . . . L SINGLE-IN-LINE PACKAGEf T M 4164 F M 9 . . . M SINGLE-IN-LINE PACKAGE Single 5-V Supply 10% Tolerance (TOP VIEW)
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TM4164EL9,
TM4164FM9
30-Pin
4164E
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TMS4164A
Abstract: TM41 TM4164 TMS4416 RAM 4164 TM41 diode TM4164EL9 pj 889 diode
Text: TM4164EL9, TM4164FM9 65,536 BY 9-BIT DYNAMIC RAM MODULES NOVEMBER 1 9 8 3 - 6 5 ,5 3 6 X 9 Organization REVISED NOVEMBER 1 9 8 5 TM 4164EL9 . . . L SINGLE-IN-LINE PACKAGE* T M 4164 F M 9 . . . M SINGLE-IN-LINE PACKAGE Single 5 -V Supply 1 0 % Tolerance (TOP VIEW)
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TM4164EL9,
TM4164FM9
30-Pin
TM4164EL9
TM4164_
TMS4164A
TM41
TM4164
TMS4416
RAM 4164
TM41 diode
TM4164EL9
pj 889 diode
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ic vertical la 78141
Abstract: IC LA 78141 schematic LA 78141 tv application circuit 4116 ram tda 78141 TMS4500 LA 78141 VERTICAL 21L14 mitsubishi elevator circuit diagram 4464 64k dram
Text: MOS Memory Data Book 1984 Commercial and Military Specifications ♦ Texas In str u m en ts Alphanumeric Index, Table of Contents, Selection Guide Interchangeability Guide Glossary/Timing Conventions/Data Sheet Structure Dynamic RAM and Memory Support Devices
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CH-8953
ic vertical la 78141
IC LA 78141 schematic
LA 78141 tv application circuit
4116 ram
tda 78141
TMS4500
LA 78141 VERTICAL
21L14
mitsubishi elevator circuit diagram
4464 64k dram
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4164 ram
Abstract: IC 4164 DYNAMIC RAM 65536 TEXAS tms4164 RAM 4164 4164 (RAM)
Text: TEXAS INSTR -CASIC/flEMORY} 77 DE§ 0Tbl7SS 0040737 3 0 9 6 1 7 2 5 TEXAS INSTR <ASIC/MEMORY T7C 4 0 7 3 7 TM4164FL8, TM4164FM8 65.536 BY 8-BIT DYNAMIC RAM MODULES NOVEMBER 1983 - REVISED NOVEMBER 1985 TM 4164FL8 . TM 4164FM 8 6 5,5 36 X 8 Organization Single 5-V Supply 10% Tolerance)
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TM4164FL8,
TM4164FM8
30-Pin
4164FL8
4164FM
4164 ram
IC 4164
DYNAMIC RAM 65536 TEXAS
tms4164
RAM 4164
4164 (RAM)
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Untitled
Abstract: No abstract text available
Text: TM497FBK32H, TM497FBK3214194304 BY 32-BIT TM893GBK32H, TM893GBK3218388608 BY 32-BIT EXTENDED-DATA-OUT DYNAMIC RAM MODULES SMMS674A-MARCH 1997-REVISED SEPTEMBER 1997 • Organization - TM497FBK32H/1: 4 194 304 x 32 - TM893GBK32H/I: 8 388 608 x 32 Presence Detect
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TM497FBK32H,
TM497FBK3214194304
32-BIT
TM893GBK32H,
TM893GBK3218388608
SMMS674A-MARCH
1997-REVISED
TM497FBK32H/1:
TM893GBK32H/I:
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Untitled
Abstract: No abstract text available
Text: in tj, 8XC196KC/8XC196KC20 COMMERCIAL/EXPRESS CHMOS MICROCONTROLLER 87C196KC—16 Kbytes of On-Chip OTPROM 83C196KC—16 Kbytes ROM 80C196KC—ROMIess • 16 and 20 MHz Available ■ Dynamically Configurable 8-Bit or 16-Bit Buswidth ■ 488 Byte Register RAM
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8XC196KC/8XC196KC20
87C196KCâ
83C196KCâ
80C196KCâ
16-Bit
Sources/16
10-Bit
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