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    RAM 2102 Search Results

    RAM 2102 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2102-1N Rochester Electronics LLC 2102 - Standard SRAM, 1KX1, 500ns, MOS, PDIP16 Visit Rochester Electronics LLC Buy
    MD2114A/BVA Rochester Electronics LLC STATIC RAM; 1K X 4 Visit Rochester Electronics LLC Buy
    27S13A/BEA Rochester Electronics LLC 27S13A - 2048-Bit (512X4) Bipolar RAM Visit Rochester Electronics LLC Buy
    CDP1824CD/B Rochester Electronics LLC CDP1824C - 32-Word x 8-Bit Static RAM Visit Rochester Electronics LLC Buy
    CY7C09389V-9AXI Rochester Electronics CY7C09389 - 3.3 V 64 K X 18 Synchronous Dual-Port Static RAM, Industrial Temp Visit Rochester Electronics Buy

    RAM 2102 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    INS8154N

    Abstract: INS8154 INS8154D AD11 INS8060 pA716 P8008
    Text: e~.National ~ Semiconcluctor ~rRIL 1118 CD . CIl ~ . INS&154 N.ChanRel 12&.by.& Bit RAM Input/Outriit RAM 1/0 Z :r m General Description Features The RAM Input/Output Chip if'.' LSI device wh/ch provides random access memor' Peripheral interfacing for microcomputer


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    PDF 128x8, INS8154N INS8154D 1104B44 341124J 32O96 INS8154N INS8154 INS8154D AD11 INS8060 pA716 P8008

    Untitled

    Abstract: No abstract text available
    Text: DS1742 Y2KC Nonvolatile Timekeeping RAM FEATURES • •          Integrated NV SRAM, Real-Time Clock, Crystal, Power-Fail Control Circuit and Lithium Energy Source Clock Registers are Accessed Identically to the Static RAM; These Registers are


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    PDF DS1742

    BT-308

    Abstract: ADSP21062 2111 ram BB128 2164 RAM 2101 ram 1kx16 AD14060
    Text: DSP and MIXED SIGNAL PROCESSORS MODEL MODEL MODEL MIPS CYLCE CLK TIME IN nsec MHZ PROGRAM RAM ROM DATA RAM CACHE SERIAL HOST PORTS PORT Vcc +3.3V TEMPERATURE RANGE 0>70 -25/85 -55/125 # Pins FIXED POINT Highest Performance: Concurrent Signal Processing ADSP


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    PDF 21CSP01 21CSP11 21CSP11L 4Kx24 24Kx24 4Kx16 16Kx16 ADSP21062 BT-308 ADSP21062 2111 ram BB128 2164 RAM 2101 ram 1kx16 AD14060

    Untitled

    Abstract: No abstract text available
    Text: DS80C320/DS80C323 High-Speed/Low-Power Microcontrollers www.maxim-ic.com FEATURES • PIN CONFIGURATIONS 80C32-Compatible TOP VIEW 8051 Pin and Instruction Set Compatible Four 8-Bit I/O Ports Three 16-Bit Timer/Counters 256 Bytes Scratchpad RAM Addresses 64kB ROM and 64kB RAM


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    PDF DS80C320/DS80C323 80C32-Compatible 16-Bit 33MHz DS80C320) 18MHz DS80C323) 121ns

    MCL 29 0826

    Abstract: DS80C320-QNG MAXIM Pin Compatible Upgrade for SH 05.22 80C32 DS80C320 DS80C320-ECG DS80C320-ENG DS80C320-MCG DS80C320-MNG
    Text: DS80C320/DS80C323 High-Speed/Low-Power Microcontrollers www.maxim-ic.com FEATURES • PIN CONFIGURATIONS 80C32-Compatible TOP VIEW 8051 Pin and Instruction Set Compatible Four 8-Bit I/O Ports Three 16-Bit Timer/Counters 256 Bytes Scratchpad RAM Addresses 64kB ROM and 64kB RAM


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    PDF DS80C320/DS80C323 80C32-Compatible 16-Bit 33MHz DS80C320) 18MHz DS80C323) 121ns MCL 29 0826 DS80C320-QNG MAXIM Pin Compatible Upgrade for SH 05.22 80C32 DS80C320 DS80C320-ECG DS80C320-ENG DS80C320-MCG DS80C320-MNG

    Untitled

    Abstract: No abstract text available
    Text: DS1742 Y2KC Nonvolatile Timekeeping RAM FEATURES • •          PIN CONFIGURATION Integrated NV SRAM, Real-Time Clock, Crystal, Power-Fail Control Circuit and Lithium Energy Source Clock Registers are Accessed Identically to the Static RAM; These Registers are


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    PDF DS1742

    RAM 2102

    Abstract: No abstract text available
    Text: MITSUBISHI LSIs MH1M64CPJ,CNPJ-5,-6,-7 FAST PAGE MODE 67108846-BIT 1048576 WORD BY 64-BIT DYNAMIC RAM DESCRIPTION The M H1M 64CPJ,CNPJ is a 1048576 word x 64-BIT dynamic RAM and consists of 16 industry standard 1M x4 dynamic RAMs in SOJ and two industry standard input buffers in SSOP.


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    PDF MH1M64CPJ 67108846-BIT 64-BIT) 64CPJ 64-BIT MH1M64CXX-5 MH1M64CXX-6 MH1M64CXX-7 67108846-BIT RAM 2102

    Untitled

    Abstract: No abstract text available
    Text: m x EDI8C16512CA m ELECTRONIC DESIGN N C 512Kx16 Static Ram PRELIMINARY 512Kx16 CMOS, High Speed Static RAM Features The EDI8C16512CA, a high speed, high performance, 8 512Kx16 bit CMOS Static megabit density Static RAM organized as 512Kx16 bits, contains two 512Kx8 SRAMs.


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    PDF EDI8C16512CA 512Kx16 EDI8C16512CA, 512Kx8 EDI8C16512LPA55JM EDI8C16512CA20JM EDI8C16512CA20JI

    Untitled

    Abstract: No abstract text available
    Text: November 1989 Edition 1.1 FUJITSU DATASHEET MB81C1002-70/-80/-10/-12 CMOS 1,048,576 BIT STATIC COLUMN MODE DYNAMIC RAM CMOS 1,048,576 X 1 BIT Static Column Mode Dynamic RAM The Fujitsu MB81C1002 is CMOS fully decoded dynamic RAM organized as 1,048,576 words x 1


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    PDF MB81C1002-70/-80/-10/-12 MB81C1002 theMB81C1002 26-LEAD SOJ-26) LCC-26P-M04) C26054S-1C MB81C1002-70

    T3A3

    Abstract: No abstract text available
    Text: November 1989 Edition 1.1 — = FUJITSU DATASHEET MB81C1002-70/-80/-10/-12 CMOS 1,048,576 BIT STATIC COLUMN MODE DYNAMIC RAM CMOS 1,048,576 X 1 BIT Static Column Mode Dynamic RAM The Fujitsu M B81C 1002 is CMOS fuHy decoded dynamic RAM organized as 1,046,576 words x 1


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    PDF MB81C1002-70/-80/-10/-12 MB81C1002 theMB61C1002 MB81C1002-70 MB81C1002-80 MB81C1002-10 MB81C1002-12 26-LEAD SOJ-26) LCC-26P-M04) T3A3

    2102 Static RAM

    Abstract: 2102L2
    Text: Extended Temperature Range Supplement 2 1 0 2 / 2102L 1024 x 1 Static RAM MOS Memory Products Description The 2102 family consists of 1024-word by 1-bit static Random Access re a d /w rite Memories RAM that require a single 5 V supply, have fully TTL-compatible


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    PDF 2102L 1024-word 16-pin 2102L) 2102H 2102LH 2102F 2102LF 2102 Static RAM 2102L2

    S22H10R

    Abstract: No abstract text available
    Text: S-22H10R/I 64-word x 4-bit parallel NON-VOLATILE RAM The S-22H10R/I is a non-volatile CMOS RAM, com posed of a CMOS static RAM and a non-volatile electrically erasable programmable memory E2PROM to backup the SRAM. The organization is 64-word x 4-bit (total 256 bits) and the


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    PDF S-22H10R/I 64-word S-22H10R/I X2210 S22H10R

    intel 2102a

    Abstract: 2102AL
    Text: 2102A, 2102AL/8102A-4* 1K x 1 BIT STATIC RAM RAM P/N 2102AL-4 2102AL 2102AL-2 2102A-2 j i m 2102A-4 Operating Pwr. mW 174 174 342 342 289 289 Standby Pwr. (mW) 35 35 42 - - 5 Volts Supply Voltage SinglejHSJ/oits TDirectly TTL Compatible: All


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    PDF 2102AL/8102A-4* 2102AL-4 2102AL 2102AL-2 102A-2 102A-4 2102AL) intel 2102a

    I486

    Abstract: KS84C31 KS84C32 MC68030 MC68040 RSC18 schematic diagram samsung led
    Text: DYNAMIC RAM CONTROLLERS KS84C31/32 PRODUCT OVERVIEW FEATURES The Samsung KS84C31 and KS84C32 are high perform­ ance dynamic RAM DRAM controllers. They simplify the interface between the microprocessor and the DRAM array, while also significantly reducing the required de­


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    PDF KS84C31/32 16Mbit 68-pin KS84C31) 84-pln KS84C32) I486 KS84C31 KS84C32 MC68030 MC68040 RSC18 schematic diagram samsung led

    2102-2 RAM

    Abstract: RAM 2102
    Text: 2 1 0 2 /2 1 0 2 L /2 1 L 0 2 1024 x 1 Static RAM MOS Memory Products Description The 2102 family consists of 1024-word by 1-bit static Random Access re a d /w rite Memories RAM that require a single 5 V supply, have fully TTL-compatible inputs and output, and require no clocking or refresh.


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    PDF 1024-word 2102L) 21L02) 2102L 21L02 16-pin 2102/2102L 2102-2 RAM RAM 2102

    Untitled

    Abstract: No abstract text available
    Text: KS84C31/32 DYNAMIC RAM CONTROLLERS FEATURES PRODUCT OVERVIEW • 40 MHz operation The Samsung KS84C31 and KS84C32 are high perform­ ance dynamic RAM DRAM controllers. They simplify the interface between the microprocessor and the DRAM array, while also significantly reducing the required de­


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    PDF KS84C31/32 KS84C31 KS84C32

    2102 SRAM

    Abstract: 2112 sram seiko epson RAM IC MEMORY CARD
    Text: STATIC RAM O U TLIN E The SRAM IC MEMORY CARD series is made up of Static RAM chips. Memory capacity is from 64K Bytes to 1M Bytes. HE series is 16 bit wide data bus. This series featuresa built-in exchangeable battery and a mechanical write protect switch to protect


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    PDF RBC065HE10 RBC129HE10 RBC257HE11 RBC513HE12 RBC101HE10 RBC065, RBC129, RBC257, RBC513, RBC101 2102 SRAM 2112 sram seiko epson RAM IC MEMORY CARD

    MB81C1001-12

    Abstract: MB81C1001-10 81C100 81c1001 MB81C1001 MB81C1001-70 MB81C1001-80 EI96
    Text: February 1990 Edition 3.0 FUJITSU MB81C100 1 -70/-80/-10/-12 CMOS 1,048,576 BIT NIBBLE MODE DYNAMIC RAM CMOS 1M x 1 Bit Nibble Mode DRAM The Fujitsu MB81C1001 is a CMOS, fully decoded dynamic RAM organized as 1,048,576 words x 1 bit. The MB81C1001 has been designed for mainframe


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    PDF MB81C1001-70/-80/-W/-12 MB81C1001 26-lead ei969 C260HS-1C MB81C1001-70 MB81C1001-80 MB81C1001-12 MB81C1001-10 81C100 81c1001 EI96

    MB8101

    Abstract: MB81C1001-10 RBS 2106 equivalent RBS 2107
    Text: February 1990 Edition 3.0 FUJITSU DATA SHEET MB81C1001-70/-80/-10/-12 CMOS 1,048,576 BIT NIBBLE MODE DYNAMIC RAM CMOS 1M x 1 Bit Nibble Mode DRAM The Fujitsu MB81C1001 is a CMOS, fully decoded dynamic RAM organized as 1,048,576 words x 1 bit. The MB81C1001 has been designed for mainframe


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    PDF MB81C1001-70/-80/-10/-12 MB81C1001 C26064S-1C MB81C1001-70 MB81C1001-80 MB81C1001-10 MB81C1001-12 20-LEAD MB8101 RBS 2106 equivalent RBS 2107

    Untitled

    Abstract: No abstract text available
    Text: February 1990 Edition 3.0 FUJITSU DATA SHEET : MB81C1001-70/-80/-10/-12 CMOS 1,048,576 BIT NIBBLE MODE DYNAMIC RAM CMOS 1M x 1 Bit Nibble Mode DRAM The Fujitsu MB81C1001 is a CMOS, fully decoded dynamic RAM organized as 1,048,576 words x 1 bit. The MB81C1001 has been designed for mainframe


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    PDF MB81C1001-70/-80/-10/-12 MB81C1001 LCC-26P-M04) C260MS-1C MB81C1001-70 MB81C1001-80 MB81C1001-10

    Untitled

    Abstract: No abstract text available
    Text: ISSI IS62C1024 128K x 8 HIGH-SPEED CMOS STATIC RAM JULY1996 FEATURES DESCRIPTION • High-speed access time: 35, 45, 55, 70 ns The ISSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ISSI's highperformance CMOS technology. This highly reliable process


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    PDF IS62C1024 JULY1996 IS62C1024 072-word SR81995C024

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI LSIs M5M5408AFP,TP,RT-55L, -70L,-10L, -55LL,-70LL,-1 OLL P R E L 1W » ^?Y 4194304-BIT 524288-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION The M5M5408A is a 4194304-blt CMOS Static RAM organized as 524288-word by 8-bit. This device is fabricated using Mitsubishi's


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    PDF M5M5408AFP RT-55L, -55LL -70LL 4194304-BIT 524288-WORD M5M5408A 4194304-blt

    2102 Static RAM

    Abstract: L7C161PC
    Text: LOGIC DEVICES INC 2bE D • SSbSTGS 00G107S G ■ -0 ? 4K x 4 CMOS Cache-Tag Static RAM FEATURES □ 4K x 4 CMOS Static RAM with 4-bit Tag Comparison Logic □ High Speed Address-to-MATCH — 10 ns maximum □ Totem Pole L7C180 or Open Drain (L7C181) MATCH Output


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    PDF 00G107S L7C180) L7C181) SSL4180, SSL4181, MK41H80, MCM4180 22-pin 2102 Static RAM L7C161PC

    2102 Static RAM

    Abstract: 2102 Ram RAM 2102 2102 2102-2 RAM I2102 21l0 21L02 2102L2 2102LH
    Text: 2 1 0 2 /2 1 0 2 L /2 1 L 0 2 1024 x 1 Static RAM M O S M em ory P ro d u cts Logic Sym bol D escrip tio n The 2102 fa m ily c o n s is ts of 1024-w ord by 1-bit s ta tic Random A c c e s s re a d /w rite M em o rie s RAM th a t req u ire a single 5 V supply, have fully T T L -com p a tib le


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    PDF 2102/2102L/21L02 1024-word 2102L) 21L02) 2102L 21L02 16-pin 2102/2102L/21L02 2102 Static RAM 2102 Ram RAM 2102 2102 2102-2 RAM I2102 21l0 2102L2 2102LH