Untitled
Abstract: No abstract text available
Text: SCHOTTKY RECTIFIER DIODES, MODULE, SINGLE, CENTER *S 1 P a rt Num ber M a x im u m P e a k F o rw a rd M a x im u m M a x im u m T y p ic a l A ve rage S u r g e C u rre n t Fw d Voltage R e ve rse J u n c tio n R e ctifie d In v B r s a @ 8 3m s g ft tt e tt l<j
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A10030
A10040
A10045
A10050
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Untitled
Abstract: No abstract text available
Text: K4V5 Series Typ«No K1V5, K1V6 A b s o lu te M a x im u m R a tin g s m g Item 9t IE # Symbol Sto rage Temperature « 'è i f f i i g . S Operating Junction Temperature *7 m i± Maximum O ff-state Voltage -9-— > * >Mìfó * > w st±fim Critical Rate of Rise of On-state Current
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10/as,
QQ03bS^
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Untitled
Abstract: No abstract text available
Text: MI 1:;| $ $ :iH ~ ^ *»- In • [NO] Ç A 'ÿ A '£ A 'Z A ‘ TA [¿JO] [J30] SA'C-A'CA'SA'IA [NO] Sl'frl'El'Zl'TI=x9 oITodtf V I A SI 't'I '£ I 'ZI 'I I=XS£fr £>Z 8 13.LNI NATURE ¿0012002 In a t u r e RAGE MOBILÍTYM3 ZOOZLOOJ NATURE 2 0 O 3 L OCV RI : 2.2 ohm 0. Swatt,
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75v-5
DL-3600
HSDL-3600
Z002lO
C0012002
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74LS174 example
Abstract: 74LS174 54LS 74LS pin configuration of 74Ls174
Text: GD54/74LS174 HEX D-TYPE FLIP-FLOPS, COMMON CLEAR Feature • • • • Contains Six Flip-Flops with Single-Rail Outputs Buffered C lo ck and Direct C lear Inputs Individual Data Input to Each Flip-Flop Application Include: B uffer/S to rage Registers Shift R egisters
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GD54/74LS174
54/74LS
74LS174 example
74LS174
54LS
74LS
pin configuration of 74Ls174
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9M80
Abstract: Calvert Electronics ug40
Text: 9 M8 0 X-B A N D M AG N E TR O N GENERAL DESCRIPTION The 9M80 is a fixed frequency pulsed type X-band magnetron designed to operate in the frequency rage of 9380 to 9440 MHz with a peak output power of 5 KW. I t is packaged and waveguide output type and forced or natural a ir cooled.
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UG-40
9M80
Calvert Electronics
ug40
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BROWN BOVERI DISTANCE RELAYS
Abstract: ranzp BROWN BOVERI relay RXTUG 2H brown boveri distance B03-9301E
Text: _ 11 l i *IPIP ASEA BROWN BOVE RI ABB Relays Abstract v Type RANZP Power-swing-blocking relay B03-7111E Rage 1 May 1983 Data subject to change without notice • Characteristic angle 80° • Setting range 2—87 ohms in 3.5—5 % steps • Reconnectible for 1 A, 2 A or 5 A rated
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B03-7111E
B03-9301E
B03-3210E
B03-9112E
B03-9382E
S-721
BROWN BOVERI DISTANCE RELAYS
ranzp
BROWN BOVERI relay
RXTUG 2H
brown boveri distance
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5 MVA generator
Abstract: 1 MVA generator 50 mva transformer 20 MVA generator ASEA ragea protection relay 10 MVA generator 2.5 MVA transformer ragea Neutral grounding resistor transformer 2 mva
Text: Ali ASEA BROWN BOVERI ABB Relays Abstract Application Type RAGEA 100 % generator stator ground-fault relay • Complete ground-fault protection for gen erator stators that are high impedance grounded • Monitors integrity of the neutral grounding and associated wiring
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B03-4012
B03-4012E
B03-1003E
B03-1215E
B03-2032E
B03-2034E
B03-2534E
B03-1613E
B03-9301E
S-721
5 MVA generator
1 MVA generator
50 mva transformer
20 MVA generator
ASEA ragea protection relay
10 MVA generator
2.5 MVA transformer
ragea
Neutral grounding resistor
transformer 2 mva
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Untitled
Abstract: No abstract text available
Text: MEMORY CMOS1M x 16 BIT FAST RAGE MODE DYNAMIC RAM CMOS 1,048,576 x 16 BIT Fast Page Mode Dynamic RAM • DESCRIPTION The Fujitsu MB8118160A is a fully decoded CMOS Dynamic RAM DRAM th a t contains 16,777,216 memory cells accessible in 16-bit increments. The M B8118160A features a.% st pa$e” .mode of operation whereby high
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MB8118160A
16-bit
B8118160A
F9704
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74LS175
Abstract: 74ls175 pin diagram
Text: GD54/74LS175 QUAD D-TYPE FLIP-FLOPS Feature • Contains Four Flip-Flops with Double-Rail Outputs • B uffered C lo ck and D irect C lear Inputs • Individual Data Input to Each Flip-Flop • Applications: B u ffer/S to rage Registers Pin Configuration Vcc
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GD54/74LS175
74LS175
74ls175 pin diagram
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MYGTM01210BZN
Abstract: EKZE160ETD102MJ20S C5 marking code EKZE160ETD102m AC24V EKZE500EC3102ML25S DC-DC converter 12-36 input voltage 5v output
Text: MYGTM01210BZN Short Form 1 DC-DC Converter Short Form MYGTM01210BZN Small Size & High Efficiency • FEATURES ・ ・ ・ ・ ・ ・ ・ High efficiency & Small Size SIL Wide input rage (17V to 40V) Adjustable output voltage (5V , 12V) Single output max. 10A
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MYGTM01210BZN
MYGTM01210BZN
20MHz
MPD-1446A
EKZE160ETD102MJ20S
C5 marking code
EKZE160ETD102m
AC24V
EKZE500EC3102ML25S
DC-DC converter 12-36 input voltage 5v output
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Heavy Twin Tower
Abstract: No abstract text available
Text: DACO SEMICONDUCTOR CO., LTD. MBRA60040CTL LOW VF SCHOTTKY DIODE MODULE TYPE 600A Features 600Amp Rectifier 40 Volts High Surge Capability HEAVY TWIN TOWER Maximum Ratings A Operating Temperature: -40 C to+100 Sto rage Temperatur: -40 C to +150 Part Number
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MBRA60040CTL
600Amp
Heavy Twin Tower
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MBR60020CT(R)L
Abstract: No abstract text available
Text: DACO SEMICONDUCTOR CO., LTD. MBR60020CT R L LOW VF SCHOTTKY DIODE MODULE TYPE 600A Features 600Amp Rectifier 20 Volts High Surge Capability TWIN TOWER Maximum Ratings A Operating Temperature: -40 C to+100 Sto rage Temperatur: -40 C to +150 R B Part Number
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MBR60020CT
600Amp
MBR60020CT(R)L
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Untitled
Abstract: No abstract text available
Text: DACO SEMICONDUCTOR CO., LTD. MBRA80035CTL LOW VF SCHOTTKY DIODE MODULE TYPE 800A Features 800Amp Rectifier 35 Volts High Surge Capability HEAVY TWIN TOWER Maximum Ratings A Operating Temperature: -40 C to+100 Sto rage Temperatur: -40 C to +150 Part Number
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MBRA80035CTL
800Amp
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MBR60045CT(R)L
Abstract: No abstract text available
Text: DACO SEMICONDUCTOR CO., LTD. MBR60045CT R L LOW VF SCHOTTKY DIODE MODULE TYPE 600A Features 600Amp Rectifier 45Volts High Surge Capability TWIN TOWER Maximum Ratings A Operating Temperature: -40 C to+100 Sto rage Temperatur: -40 C to +150 R B Part Number MBR60045CT(R)L
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MBR60045CT
600Amp
45Volts
MBR60045CT(R)L
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MBR300150CT(R)
Abstract: Twin Tower
Text: MBR 300150CT R DACO SEMICONDUCTOR CO., LTD. T HRU MBR 300200 CT(R) SCHOTTKY DIODE MODULE TYPES 300A Features 300Amp Rectifier 150-200 Volts High Surge Capability Types Up to 200V VRRM TWIN TOWER Maximum Ratings A Operating Temperature: -55 C to+150 Sto rage Temperatur: -55 C to +150
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300150CT
300Amp
MBR300150CT
MBR300200CT
MBR300150CT(R)
Twin Tower
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Untitled
Abstract: No abstract text available
Text: DACO SEMICONDUCTOR CO., LTD. MBRA80020CTL LOW VF SCHOTTKY DIODE MODULE TYPE 800A Features 800Amp Rectifier 20 Volts High Surge Capability HEAVY TWIN TOWER Maximum Ratings A Operating Temperature: -40 C to+100 Sto rage Temperatur: -40 C to +150 Part Number
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MBRA80020CTL
800Amp
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Heavy Twin Tower
Abstract: No abstract text available
Text: DACO SEMICONDUCTOR CO., LTD. MBRA80040CTL LOW VF SCHOTTKY DIODE MODULE TYPE 800A Features 800Amp Rectifier 40 Volts High Surge Capability HEAVY TWIN TOWER Maximum Ratings A Operating Temperature: -40 C to+100 Sto rage Temperatur: -40 C to +150 Part Number
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MBRA80040CTL
800Amp
Heavy Twin Tower
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Untitled
Abstract: No abstract text available
Text: Suntan ALUMINUM ELECTROLYTIC CAPACITOR FOR E N E R G Y LA M P - 1 0 5 8000-10000HOURS TS13D CD11GE FEATU R E S 105 8000-10000 hours Æ Specifications I T E M S P E R F O R M A N C E Rated Voltage Capacitance C H A R A C T E R I S T I C S DC160~450V Raged Voltage V
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8000-10000HOURS
TS13D
CD11GE
DC160
10x12
10x16
10x17
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Untitled
Abstract: No abstract text available
Text: Suntan ALUMINUM ELECTROLYTIC CAPACITOR FEATU R E S TS13D CD81 105 Æ Specifications I T E M S P E R F O R M A N C E Rated Voltage Capacitance -40~+105 % 6.3-400V , -25 ~+105 Raged Voltage (V) Tan Dissipation Factor Leakage Current Load Life (+130 10 0.19
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TS13D
2000hours
10x12
10x16
16x25
-10x16
-16x30
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Untitled
Abstract: No abstract text available
Text: FLEXIBLE BOARD IM HIGH DENSITY D e sig n fle x ib ility in all th re e planes. Ic o n t a c t I PACE 6-7 • 0 .5 0 mm .0197" • (0.635mm) .025" • (0.80mm) .0315' • (2.00mm) .0787' Micro Pin & Socket PAGES 10-11 Micro Blade & Beam RAGES 10-11 • (0,50mm) .0197"
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635mm)
1-27mm)
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M 500 ma, 250 V
Abstract: LAG 624
Text: 5 X 20 mm IEC Miniature Fuse Links G-Sicherungseinsätze Fusibles Miniatures S eries 219 glass tube Serie 219 (G lasro hr) S érie 219 (Tube verre ) T im e Lag (T) Enhanced B rea kin g C apacity T rage (T) Erhöht S cha ltverm ö gen T e m p o risé (T)
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Untitled
Abstract: No abstract text available
Text: •HYUNDAI HYM532210A E-Series 2M X 32-bit CMOS DRAM MODULE DESCRIPTION The HYM53221OA is a 2M x 32-bit Fast Rage mode CMOS ORAM module consisting of four HY5117800B In 28/28 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22^F decoupling capacitor is mounted for
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HYM532210A
32-bit
HYM53221OA
HY5117800B
HYM53221OAE/ASLE/ATE/ASLTE
HYMS3221OAEG/ASLEG/ATEG/ASLTEG
DQ0-DQ31)
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50CE220
Abstract: MYSSM0123ECEN 50CE220KX 16CE330KX
Text: MYSSM0123ECEN Short Form 1 DC-DC Converter Short Form MYSSM0123ECEN High Power & Small Size POL • Features ・ ・ ・ ・ ・ ・ ・ High Power(30W) & Small Size surface mount Wide input rage (17V to 40V) Wide output range ( 5.0V to 12.0V ) High efficiency up to 97%
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MYSSM0123ECEN
MYSSM0123ECEN
50CE220
50CE220KX
16CE330KX
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currency exchange
Abstract: No abstract text available
Text: CONTENTS_ Rage TDK SENSORS. 3 MATERIALS FOR SENSORS. 45 The e x p o rt o f TDK pro d u c ts is sub je c t to approval by the Japanese governm ent In accordance w ith the Japanese Foreign Currency Exchange, th e Japanese Export
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