6259S
Abstract: capacitor discharge ignition transistor 7746 11 pin 24 AC relay pulse IGNITION 8873 IC sth 39 d
Text: U 6044 B TELEFUNKEN Semiconductors Radiator fan controlled timer Description The bipolar integrated circuit, U 6044 B, is designed as a radiator fan controlled timer. After the ignition is switched off, the thermal switch of the engine can activate the radiator fan via relay for a preset period, to support the
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prot73
D-74025
6259S
capacitor discharge ignition
transistor 7746
11 pin 24 AC relay
pulse IGNITION
8873 IC
sth 39 d
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capacitor discharge ignition
Abstract: data 8873 air condition 5 pin relay configuration 6044 8 pin IC 8815 k ignition driver use ic in capacitor discharge ignition ignition block diagram
Text: U 6044 B TELEFUNKEN Semiconductors Radiator fan controlled timer Description The bipolar integrated circuit, U 6044 B, is designed as a radiator fan controlled timer. After the ignition is switched off, the thermal switch of the engine can activate the radiator fan via relay for a preset period, to support the
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D-74025
capacitor discharge ignition
data 8873
air condition
5 pin relay configuration
6044
8 pin IC
8815 k
ignition driver
use ic in capacitor discharge ignition
ignition block diagram
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CHN 510
Abstract: air condition transistor CHN 137
Text: Te m ic U 6044 B TELEFUNKEN Semiconductors Radiator fan controlled timer Description The bipolar integrated circuit, U 6044 B, is designed as a radiator fan controlled timer. After the ignition is switched off, the thermal switch of the engine can activate the
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D-74025
CHN 510
air condition
transistor CHN 137
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bosch automotive relay
Abstract: bosch relay 0 332 002 150 0 332 002 156 relay V23232E0002X007 Bosch Relay 30 amp V23232A0002X009 v23232A0001x003 0 332 002 256 V23232-E0002-X007 tyco 12 volt relay
Text: TYCO RELAYS High quality automotive relays manufactured by Tyco are available with current carrying capacity of 5 to 75 amps. Offered in SPST and SPDT configurations with 12 and 24 volt DC input. Generally used in starter, glow-plug and accessory circuits horn, rear window defogger, radiator
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V23232A0002X009
bosch automotive relay
bosch relay 0 332 002 150
0 332 002 156 relay
V23232E0002X007
Bosch Relay 30 amp
V23232A0002X009
v23232A0001x003
0 332 002 256
V23232-E0002-X007
tyco 12 volt relay
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5BWF15L00
Abstract: a1249 so2 sensor GW5BWF15L00 power electronics project list
Text: SPEC. No. ISSUE DG-087005 Jun-27-08 ELECTRONIC COMPONENTS AND DEVICES GROUP SHARP CORPORATION SPECIFICATION DEVICE SPECIFICATION FOR LIGHT EMITTING DIODE MODULE MODEL No. GW5BWF15L00 Ｓｐｅｃｉｆｉｅｄ ｆｏｒ Reference CUSTOMERS' APPROVAL PRESENTED
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DG-087005
Jun-27-08
GW5BWF15L00
A1249
5BWF15L00
so2 sensor
GW5BWF15L00
power electronics project list
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GW5BDF15L00
Abstract: a1249 5BDF15L00 dg 415 lm 431 DAtasheet so2 sensor LE-3400
Text: SPEC. No. ISSUE DG-087006 Jun-27-08 ELECTRONIC COMPONENTS AND DEVICES GROUP SHARP CORPORATION SPECIFICATION DEVICE SPECIFICATION FOR LIGHT EMITTING DIODE MODULE MODEL No. GW5BDF15L00 Ｓｐｅｃｉｆｉｅｄ ｆｏｒ Reference CUSTOMERS' APPROVAL PRESENTED
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DG-087006
Jun-27-08
GW5BDF15L00
A1249
GW5BDF15L00
5BDF15L00
dg 415
lm 431 DAtasheet
so2 sensor
LE-3400
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A1249
Abstract: so2 sensor LED 5050 WHITE CODE C optical smoke sensor security locker 5BNF15L00 fluid sensor block diagram LED 5050 power electronics project list white LED 5050
Text: SPEC. No. ISSUE DG-087007 Jun-27-08 ELECTRONIC COMPONENTS AND DEVICES GROUP SHARP CORPORATION SPECIFICATION DEVICE SPECIFICATION FOR LIGHT EMITTING DIODE MODULE MODEL No. GW5BNF15L00 Ｓｐｅｃｉｆｉｅｄ ｆｏｒ Reference CUSTOMERS' APPROVAL PRESENTED
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DG-087007
Jun-27-08
GW5BNF15L00
A1249
so2 sensor
LED 5050 WHITE CODE C
optical smoke sensor
security locker
5BNF15L00
fluid sensor block diagram
LED 5050
power electronics project list
white LED 5050
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Untitled
Abstract: No abstract text available
Text: Application Note Light Emitting Diode IRED Power Output Specifications A method of specifying power output is to measure the power radiated into a cone whose apex is at the IRED. This cone is the solid angle over which the power output is measured. "Steradian" is the unit of measurement of
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SEP8505
Abstract: SEP8505-002
Text: Application Note Light Emitting Diode IRED Power Output Specifications A method of specifying power output is to measure the power radiated into a cone whose apex is at the IRED. This cone is the solid angle over which the power output is measured. "Steradian" is the unit of measurement of
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a1249
Abstract: so2 sensor so2 sensor datasheet fluid sensor block diagram
Text: SPEC. No. ISSUE DG-087008 Jun-27-08 ELECTRONIC COMPONENTS AND DEVICES GROUP SHARP CORPORATION SPECIFICATION DEVICE SPECIFICATION FOR LIGHT EMITTING DIODE MODULE MODEL No. GW5BNF15L10 Ｓｐｅｃｉｆｉｅｄ ｆｏｒ Reference CUSTOMERS' APPROVAL PRESENTED
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DG-087008
Jun-27-08
GW5BNF15L10
A1249
so2 sensor
so2 sensor datasheet
fluid sensor block diagram
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Untitled
Abstract: No abstract text available
Text: 5. HANDLING PRECAUTIONS Designed and manufactured under Toshiba’s high quality assurance system, semiconductor products offer satisfactory properties and quality for users. However, if such devices are selected inappropriately or are subjected to heavy thermal, mechanical, or electrical stress, their properties, quality, and reliability
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LM 3390
Abstract: a1249 GW5 sharp equivalent transistor n 4212 k 4212 so2 sensor GW5BNC15L02 lm 5300 gw5b GW5C15L00
Text: SPEC. No. ISSUE DGJan-21-08 ELECTRONIC COMPONENTS GROUP SHARP CORPORATION SPECIFICATION DEVICE SPECIFICATION FOR LIGHT EMITTING DIODE MODULE MODEL No. ＧＷ５□□Ｃ１５Ｌ０２ Ｓｐｅｃｉｆｉｅｄ ｆｏｒ □ □ depends on the emission of light color.
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DGJan-21-08
GW5BWC15L02
GW5BDC15L02
GW5BNC15L02
GW5BNC15L2
A1249
DG1/14
LM 3390
GW5 sharp
equivalent transistor n 4212
k 4212
so2 sensor
GW5BNC15L02
lm 5300
gw5b
GW5C15L00
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Untitled
Abstract: No abstract text available
Text: §5. Handling Instructions Suitable handling precautions during device m easurem ent and system design m ust be taken as described below for high perform ance o f a device w ith high reliability. 5.1 The Absolute Maximum Ratings Be careful never to exceed, even m om entarily, the absolute m axim um ratings specified in the data sheets
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Untitled
Abstract: No abstract text available
Text: T h e rm a l Stability a n d R adia tion I Transistor C irc u ii Suppose that the dissipation applied to the junction is Pc and that a variation o f APc was produced in this dissipation by some cause. T here appears a tem perature change of A Pc0ja in the junction. 0ja : therm al resis
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2SC3626
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JDSU laser diode
Abstract: Alumina submount jdsu laser diode 980 nm JDSU pump laser 10 gb laser diode laser diode jdsu jdsu
Text: COMMERCIAL LASERS High-speed, High-temperature Data Link Diode Lasers 5800 Series Key Features • Modulation rates up to 1.25 Gb/s • Temperature operating range -40 to 125 °C • 990 nm wavelength • Alumina submount Applications • Avionic LANs • Satellite data links
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5800DIODELASER
498-JDSU
5378-JDSU
JDSU laser diode
Alumina submount
jdsu laser diode 980 nm
JDSU pump laser
10 gb laser diode
laser diode jdsu
jdsu
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SDL laser diode manual
Abstract: JDS Uniphase laser SDL Laser diode Laser SDL Laser SDL 980
Text: Product Bulletin High-speed, High-temperature Data Link Laser Diodes SDL-5800 Series High-speed lasers manufactured with InGaAs active regions are able to perform at gigabit data rates at high temperatures. SDL-5800 series lasers are able to transmit data at 1.25 Gb/s
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SDL-5800
SDL-5800,
SDL laser diode manual
JDS Uniphase laser
SDL Laser diode
Laser SDL
Laser SDL 980
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JDSU laser diode
Abstract: No abstract text available
Text: COMMERCIAL LASERS Diode Lasers, High Brightness 10 W, 9xx nm 63xx Series Key Features • 100 µm emitter width • High-efficiency, MOCVD quantum well design • High reliability Applications • Fiber laser pumping • Medical/ophthalmic applications • Beacons/illumination
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498-JDSU
5378-JDSU
63XXDIODELASER
JDSU laser diode
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laser diode submount
Abstract: No abstract text available
Text: COMMERCIAL LASERS Diode Lasers, High Brightness 10 W, 9xx nm 63xx Series Key Features • 100 µm emitter width • High-efficiency, MOCVD quantum well design • High reliability The 63xx series diode lasers represent an advancement in high continuous-wave
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498-JDSU
5378-JDSU
63XXDIODELASER
laser diode submount
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SDL-5311-G
Abstract: SDL5311G1 SDL-5301 SDL-5311-G1 SDL-5301-G1 SDL Laser diode SDL5301G1 diode em 513 sdl diode laser SDL-5300
Text: -ÿ L 5 I »¡¡•■I & conn S E R I E n m S LOW COST 100/50mWCW SINGLE MODE GaAIAs LASER DIODES Key Features High power in a diffraction limited, single spatial mode beam is provided by the low Diffraction Limited Beam TEM00 Single Transverse Mode cost SDL-5300 series laser diodes. The index
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100/50mWCW
TEM00
SDL-5300
SDL-5311-G
00003fc
SDL5311G1
SDL-5301
SDL-5311-G1
SDL-5301-G1
SDL Laser diode
SDL5301G1
diode em 513
sdl diode laser
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2 Wavelength Laser Diode
Abstract: laser diode submount 915 submount
Text: COMMERCIAL LASERS Diode Lasers, High Brightness 10 W, 9xx nm 63xx Series Key Features • 100 µm emitter width • High-efficiency, MOCVD quantum well design • High reliability The 63xx series diode lasers represent an advancement in high continuous-wave
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498-JDSU
5378-JDSU
63XXDIODELASER
2 Wavelength Laser Diode
laser diode submount
915 submount
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915 submount
Abstract: No abstract text available
Text: COMMERCIAL LASERS Diode Lasers, High Brightness 10 W, 9xx nm 63xx Series Key Features • 100 µm emitter width • High-efficiency, MOCVD quantum well design • High reliability Applications • Fiber laser pumping • Medical/ophthalmic applications • Beacons/illumination
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498-JDSU
5378-JDSU
63XXDIODELASER
915 submount
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SDL Laser diode
Abstract: SDL Laser diode sdl-2100-e1 sdl-2100-e1 Laser SDL
Text: I l Is s. ¡5 i l .!? • ii I E R - ■ S ji' fl It £5 Ï '« 1 WATT PULSED GaAIAs LASER DIODES Key Features The high duty factor, high optical power offered by the SDL-2100 Series is achieved 1 W Peak Pulsed Power by a quantum well active layer structure that
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SDL-2100
SDL Laser diode
SDL Laser diode sdl-2100-e1
sdl-2100-e1
Laser SDL
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENA2308B NGTB30N60L2WG N-Channel IGBT With Low VF Switching Diode 600V, 30A, VCE sat ;1.4V http://onsemi.com Features Electrical Connection • IGBT VCE(sat)=1.4V typ. (IC=30A, VGE=15V) • IGBT IC=100A (Tc=25°C) • IGBT tf=80ns typ. • Low switching loss in higher frequency applications
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ENA2308B
NGTB30N60L2WG
A2308-8/8
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Melles Griot 06 DLD 201
Abstract: Melles Griot Laser Diode driver "DLD 201" samsung Laser pickup SLD65018371 melles griot 06 dld Melles Griot SLD65018371 equivalent SLD6501837 low noise, 780nm, 5mw
Text: LASER DIODE LASER DIODE • INTRODUCTION Laser Diode LD is a semiconductor device with p-n junction which emit laser radiation by applying a current in forward direction. The term laser is an acronym that stands for "Light Amplification by Stimulated Emission of Radiation". The basic operating mechanisms of laser
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