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    PEPPERL+FUCHS GmbH RADEC-D-NA

    SENSOR - RADAR SENSOR RELAY
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    DigiKey RADEC-D-NA Box 1
    • 1 $220.57
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    Newark RADEC-D-NA Bulk 1
    • 1 $264.98
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    PEPPERL+FUCHS GmbH RADEC-M-NA

    SENSOR - RADAR SENSOR RELAY
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    DigiKey RADEC-M-NA Box 1
    • 1 $151.58
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    PEPPERL+FUCHS GmbH RMS/RADEC CEILING KIT WH

    PHOTOELECTRIC (DOORS, GATES, ELE
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    DigiKey RMS/RADEC CEILING KIT WH Box 1
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    Newark RMS/RADEC CEILING KIT WH Bulk 1
    • 1 $90.5
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    RS RMS/RADEC CEILING KIT WH Bulk 1
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    PEPPERL+FUCHS GmbH RADEC-M-NA (ALTERNATE: 257838)

    Sensor, Photoelectric, (Doors, Gates, Elevators), 257838 | Pepperl+Fuchs Factory Automation RADEC-M-NA
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    RS RADEC-M-NA (ALTERNATE: 257838) Bulk 1
    • 1 $169.58
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    PEPPERL+FUCHS GmbH RADEC-D-NA (ALTERNATE: 258909)

    Sensor, Photoelectric, (Doors, Gates, Elevators), 258909 | Pepperl+Fuchs Factory Automation RADEC-D-NA
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    RS RADEC-D-NA (ALTERNATE: 258909) Bulk 1
    • 1 $246.75
    • 10 $240.58
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    RADEC Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    sensitivity of ldr

    Abstract: MIL-STD-883G MILSTD-883G specification of ldr 3 pins LDR LM 3171 LM119 TM1019 LM119xRLQMLV LM111
    Text: 1 RADECS 2009 Proceedings – [DW-1] Low Dose Rate Test Results of National Semiconductor’s ELDRS-free Bipolar Comparators LM111 and LM119 Kirby Kruckmeyer, Member, IEEE, Larry McGee, Bill Brown and Linda Miller Abstract—Many bipolar comparators have been shown to


    Original     		PDF LM111 LM119 com/ds/LM/LM111QML mil/Downloads/MilSpec/Smd/00524 LM119 com/ds/LM/LM119QML mil/Downloads/MilSpec/Smd/96798 MIL-PRF-38535 nloads/MilSpec/Docs/MIL-PRF38535/prf38535 sensitivity of ldr MIL-STD-883G MILSTD-883G specification of ldr 3 pins LDR LM 3171 TM1019 LM119xRLQMLV

    chemi-con date code 7m138

    Abstract: MIL-PRF-39018 36DX112F450CD2A 7M138 D 2578 equivalent Defense Electronics Supply Center 567 36DX142F350BF2A 36DX222F450DF2A MIL-STD-1285 BB 36 931
    Text: REVISIONS LTR A DATE 92/07/14 APPROVED D. Moore B DESCRIPTION Added capacitance 1,100 µF at 350 V dc. Editorial changes throughout. Editorial changes throughout. 11 Dec 00 K. Cottongim C Editorial changes throughout. 6 June 06 Michael Radecki CURRENT DESIGN ACTIVITY CAGE CODE 037Z3


    Original     		PDF 037Z3 REV6DX123F250DJ2A 36DX161F350AA2A 36DX321F350AB2A 36DX471F350AC2A 36DX661F350BB2A 36DX991F350BC2A 36DX11588 36DX142F350BF2A 36DX192F350CD2A chemi-con date code 7m138 MIL-PRF-39018 36DX112F450CD2A 7M138 D 2578 equivalent Defense Electronics Supply Center 567 36DX222F450DF2A MIL-STD-1285 BB 36 931

    memoire

    Abstract: RAM EDAC SEU 350Krad
    Text: 0.6µm CMOS TECHNOLOGY WITH RADIATION TOLERANT FEATURES APPLICATION TO 8Kx16 DUAL PORT RAM and SEA of GATES TECHNOLOGIE CMOS 0.6µm TOLERANTE AUX RADIATIONS APPLICATION A LA MEMOIRE DOUBLE ACCES 8Kx16 ET AUX MERS DE PORTES by Thierry CORBIERE, Valerie LASSERE, Bruno THOMAS, Saïd HACHAD 1


    Original     		PDF 8Kx16 memoire RAM EDAC SEU 350Krad

    ADC08D1000DEV

    Abstract: AD677 WAVEVISION4 ADC08D1000WG-QV XC4VLX15 JESD57 for lvds ADC hard radiation
    Text: The material is posted here with permission of the IEEE. Internal or personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution must be obtained fron the IEEE by writing to pubs-permissions.org.


    Original     		PDF XC4VLX15) com/xilinx/files/ADC08D1000DEV rary/analogdialogue/archives/3906/Chapter 20Sampled 20Data 20Systems ADC08D1000WG-QV" EIA/JESD57, org/download/search/jesd57 ADC08D1000DEV AD677 WAVEVISION4 ADC08D1000WG-QV XC4VLX15 JESD57 for lvds ADC hard radiation

    DE-AC04-94AL85000

    Abstract: analog devices lm139 LM111 LM139 compendium of recent total ionizing dose
    Text: Total Dose Hardening of a Bipolar Voltage Comparator R.L. Pease, RLP Research, Inc., Albuquerque, NM 87122 M. C. Maher, National Semiconductor, South Portland, ME, 04106 M. Savage, P. Baker, J. Krieg, and T. Turflinger, NAVSEA Crane, Crane, IN 47522 M. Shaneyfelt, Sandia Labs, Albuquerque, NM 87185


    Original     		PDF LM139, NS-47, DE-AC04-94AL85000 analog devices lm139 LM111 LM139 compendium of recent total ionizing dose

    relay 8 pin dayton

    Abstract: MIL-PRF-39016 03ln8 Dayton relays MIL-STD-1285 a-a55485 MAVCD-5419-5 relay 11 pin dayton QPL-39016 39016
    Text: REVISIONS LTR DESCRIPTION A Delete paragraph 1.1 and 1.2 in their entirety and substitute new paragraph 1.1 as printed on page 2. Renumber paragraph 1.3 to 1.2. 8 May 85 S. Searcy B Change vendor similar part numbers. 7 Mar 86 S. Searcy C Increase acceleration to 75 g's. Add new


    Original     		PDF 5945-E088. 037Z3 MAVCD-5419-1 MAVCD-5419-2 MAVCD-5419-3 MAVCD-5419-4 MAVCD-5419-5 MAVCD-5419-6 MAVPD-5442-7 MAVPD-5442-8 relay 8 pin dayton MIL-PRF-39016 03ln8 Dayton relays MIL-STD-1285 a-a55485 MAVCD-5419-5 relay 11 pin dayton QPL-39016 39016

    Untitled

    Abstract: No abstract text available
    Text: Events Terabit Networking Xilinx Announces Terabit Networking Forum Industry leaders to discuss next generation system interconnect technologies that meet the network demands of the terabit revolution. by Ron DiGiuseppe System Interfaces Product Marketing Manager, Xilinx


    Original     		PDF

    RAD6000

    Abstract: NA-GSFC-2005-04 HCN58C1001 EEPROM retention testing EEPROM retention bake screening GSFC SCS750 RAD6000 processor architecture 79LV0408RPFE-20 28C011TRPFS-12
    Text: Review of GSFC NASA Advisory NA-GSFC-2005-04 Part Types: Models: Manufacturer: EEPROM All EEPROM Models Maxwell Technologies Lot Date Codes: All LDC’s Document: 1009322 Revision: Date: 2 March 24, 2006 | Maxwell Technologies | 9244 Balboa Avenue, San Diego, CA 92123, United States |


    Original     		PDF NA-GSFC-2005-04 RAD6000 NA-GSFC-2005-04 HCN58C1001 EEPROM retention testing EEPROM retention bake screening GSFC SCS750 RAD6000 processor architecture 79LV0408RPFE-20 28C011TRPFS-12

    60Co

    Abstract: No abstract text available
    Text: Intersil White Paper Specialty Products Space and Defense Wafer by Wafer Low Dose Rate Acceptance Testing in a Production Environment Abstract—This White Paper describes technical details of a wafer by wafer low dose rate acceptance testing program being implemented for all Intersil radiation hardened products. We


    Original     		PDF

    SFME28-461

    Abstract: 14933 QML-38534 FME28-461 SFME28-461Z
    Text: REVISIONS LTR DESCRIPTION DATE APPROVED A Corrected power dissipation rating 20 Oct 1995 Andrew R. Ernst B Added case outlines T, U, Y, Z C Added device type 02. Editorial changes. Added tab dimensions to package end on case outlines T, Y, and Z. 25 Apr ‘02


    Original     		PDF 037Z3. 01HYX 01HZX 02HTX 02HUX 02HXX 02HYX 02HZX 02KTX 02KUX SFME28-461 14933 QML-38534 FME28-461 SFME28-461Z

    LM95A

    Abstract: transistor a1020 Actel A1020 ACTEL A1010 Actel a1280 LM95 A1020 transistor actel a1020b ACTEL A1280A RT14100
    Text: RADIATION PERFORMANCE OF ACTEL PRODUCTS J.J. Wang Technology Development Actel Corporation 408-522-4576 jih-jong.wang@actel.com Rev7 November 8, 2000 1 I. TOTAL IONIZING DOSE (TID) PERFORMANCE Table I list the TID data of Actel products published in the open domain. Also included is the availability of each product.


    Original     		PDF 98-CJ4-009, RAD97] LM95A transistor a1020 Actel A1020 ACTEL A1010 Actel a1280 LM95 A1020 transistor actel a1020b ACTEL A1280A RT14100

    VLSI Technology

    Abstract: "vlsi technology" abstract "vlsi technology" abstract for 35CL inverter grade SCR solar 4V led RADEC
    Text: Hardening a CMOS Technology Against Total Dose and Heavy Ion Induced Latch–up by Thierry CORBIERE, Valerie LASSERE, Bruno THOMAS, Said HACHAD 1 Robert ECOFFET(2), Sophie DUZELLIER(3) (1) MATRA MHS, NANTES (F) (2) CNES, TOULOUSE (F) (3) CERT/DERTS, TOULOUSE (F)


    Original     		PDF

    MIL-PRF-38534

    Abstract: MIL-PRF-55310 MIL-PRF-883 MIL-STD-790 MIL-STD-883 PRESSURE 38534 MIL-STD-883, Method 2023
    Text: ENGINEERING PRACTICE STUDY Crystal Oscillator Testing: A comparison between MIL-PRF-55310 Oscillator,Crystal Controlled and MIL-PRF-38534 (Hybrid Microcircuits). FINAL REPORT 13 NOVEMBER 2008 PROJECT NUMBER: 5955-2009-002 Study conducted by: William E. Sindelar, Electronics Component Team, DSCC-VAT


    Original     		PDF MIL-PRF-55310 MIL-PRF-38534 MIL-PRF-55310 MIL-STD-790 MIL-PRF-38534 MIL-PRF-883 MIL-STD-790 MIL-STD-883 PRESSURE 38534 MIL-STD-883, Method 2023

    "vlsi technology" abstract for

    Abstract: "vlsi technology" abstract
    Text: Hardening CMOS Hardening a CMOS Technology Against Total Dose and Heavy Ion Induced Latch–up by Thierry CORBIERE, Valerie LASSERE, Bruno THOMAS, Said HACHAD 1 Robert ECOFFET(2), Sophie DUZELLIER(3) (1) MATRA MHS, NANTES (F) (2) CNES, TOULOUSE (F) (3) CERT/DERTS, TOULOUSE (F)


    Original     		PDF

    C2220E105K5

    Abstract: C2220E105K3 Robert C2220E 500S47W105 250S47W105K 2221E105KU vat package marking code
    Text: REVISIONS LTR DESCRIPTION DATE APPROVED A Added suggested source of supply. Added 1 µF at 25 V dc, .065 T maximum. Editorial changes throughout. 16 May 94 D. Moore B Page 4 – Revised inspection of product for delivery requirements. 23 May 96 Andrew R. Ernst


    Original     		PDF MIL-PRF-55681. 0LR95 C2220E105K5 C2220E105K3 Robert C2220E 500S47W105 250S47W105K 2221E105KU vat package marking code

    AD677

    Abstract: ADC08D1000WG-QV folding-ADC ADC08D1000DEV EPI LVDS XC4VLX15 preset resistor testing method ADC digital calibration time interleaved
    Text: This material is posted here with permission of the IEEE. Internal or personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistributionmust be obtained from the IEEE by writing to pubs-permissions@ieee.org.


    Original     		PDF ADC08D1000DEV XC4VLX15) com/xilinx/files/ADC08D1000DEV ary/analogdialogue/archives/39-06/Chapter 20Sampled 20Data 20Systems AD677 ADC08D1000WG-QV folding-ADC ADC08D1000DEV EPI LVDS XC4VLX15 preset resistor testing method ADC digital calibration time interleaved

    spice MODEL FOR LM119

    Abstract: HS-139RH SPICE model lm139 PM139S pmi PM139 "window comparator" lm139 LM119 PJ 41 MG cmos cots radiation SN103
    Text: Laser-Induced and Heavy Ion-Induced Single Event Transient SET Sensitivity Measurements on LM139 Comparators Stephen D. LaLumondiere1 , Rocky Koga 2 , Michael C. Maher3 , and Steven C. Moss1 , 1. Electronics and Photonics Laboratory 2. Space Sciences Applications Laboratory


    Original     		PDF LM139 LM139s PM139 HS-139RH HS139RH. spice MODEL FOR LM119 SPICE model lm139 PM139S pmi PM139 "window comparator" lm139 LM119 PJ 41 MG cmos cots radiation SN103

    93027

    Abstract: MIL-DTL-31000 93026 60024 60027 transistor 60024 Y1410 RAYCO ELECTRONICS vanguard 60001
    Text: REVISIONS LT A B C DESCRIPTION DATE Add Source of Supply 23 February 1998 Changes in accordance with NOR 5950-R001-98. Added an additional Source of Supply. Change Source of Supply Address. Update drawing to current format and update referenced documents.


    Original     		PDF 5950-R001-98. 037Z3 5T4767-009 5T4767-010 5T4767-011 5T4767-012 5T4767-013 5T4767-014 5T4767-015 5T4767-016 93027 MIL-DTL-31000 93026 60024 60027 transistor 60024 Y1410 RAYCO ELECTRONICS vanguard 60001

    MIL-PRF-39014

    Abstract: SPA11X104KHA M/MIL-PRF-39014/05
    Text: REVISIONS LTR DESCRIPTION DATE APPROVED A Added suggested source of supply. 10 Jan 90 David E. Moore B Deleted suggested source of supply. 29 Jun 90 David E. Moore C Deleted and added suggested sources of supply. Modified 3.1.2 and figure 1. Added note for


    Original     		PDF 5910-R018-96 O222MHA SPA11X272KHA SPA11X272MHA SPA11X332KHA SPA11X332MHA SPA11X392KHA SPA11X392MHA SPA11X472KHA SPA11X472MHA MIL-PRF-39014 SPA11X104KHA M/MIL-PRF-39014/05

    shockley diode

    Abstract: ccd sensor star tracker shockley diode application diode shockley sun tracking sensors photodiodes shockley diode datasheet Laser power supply abstract Alcatel Microelectronics image sensor star tracker shockley
    Text: Total Dose Effects on CMOS Active Pixel Sensors J. Bogaerts, B. Dierickx Imec, Kapeldreef 75, 3001 Leuven, Belgium ABSTRACT Co60 irradiations have been carried out on test structures for the development of CMOS Active Pixel Sensors APS that can be used in a radiation environment. The basic mechanisms that may cause failure are presented. Ionization induced damage


    Original     		PDF 25-keV shockley diode ccd sensor star tracker shockley diode application diode shockley sun tracking sensors photodiodes shockley diode datasheet Laser power supply abstract Alcatel Microelectronics image sensor star tracker shockley

    MIL-S-7742

    Abstract: No abstract text available
    Text: X -* U /r * I U U U f I — I T h e se draw ings a n d sp ecificatio n s a re th e property of M icrodot Inc., a re issu e d In stric t confid en ce an d shall n o t b e divulged, b e rep ro d u ced o r copied, o r used as t h e b a sis fo r t h e m a n u fa c tu re o r s a te o f any article


    OCR Scan     		PDF S-626 MIL-S-7742 MIL-S-7742