radar 77 ghz
Abstract: No abstract text available
Text: Analog, Mixed Signal and Power Management MRD2001 77 GHz Radar Transceiver Chipset High-resolution 77 GHz radar voltage-controlled oscillator VCO , receiver, transmitter chipset Target Applications Overview • Long-range radar (LRR), mid-range radar (MRR) and short-range radar
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MRD2001
MRD2001FS
radar 77 ghz
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front-end radar
Abstract: radar
Text: ADVANCES IN RECEIVER FRONT-END AND PROCESSING PRODUCTS Since the introduction of radar, the goal of the radar systems engineer has been to improve overall range and accuracy performance. Radar range is defined in the classical radar equation as: The minimal detectable signal Smin is, in reality, a statistical value based upon the probability of detection
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1960s
1970s,
front-end radar
radar
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Untitled
Abstract: No abstract text available
Text: Part Number: Integra IB1214M375 Preliminary TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT L-Band Radar Transistor The high power pulsed radar transistor device part number IB1214M375 is designed for L-Band radar systems operating over the instantaneous bandwidth of
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IB1214M375
IB1214M375
IB1214M375-REV-PR1-DS-REV-NC
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Untitled
Abstract: No abstract text available
Text: Part Number: Integra IB2731MH110 TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT S-Band Radar Transistor Class C Operation − High Efficiency The high power pulsed radar transistor device part number IB2731MH110 is designed for S-Band radar systems operating over
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IB2731MH110
IB2731MH110
IB2731MH110-REV-NC-DS-REV-B
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Untitled
Abstract: No abstract text available
Text: Integra Part Number: IBP2729MH300 TECHNOLOGIES, INC. S-Band Radar Pallet Silicon Bipolar − Ultra-high fT Part number IBP2729MH300 is a 50 Ω matched high power pulsed radar pallet amplifier for S-Band radar systems operating over the instantaneous bandwidth
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IBP2729MH300
IBP2729MH300
IBP2729MH300-REV-NC-DS-REV-A
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Untitled
Abstract: No abstract text available
Text: Part Number: Integra IB1214M32 TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT L-Band Radar Transistor Class C Operation − High Efficiency The high power pulsed radar transistor device part number IB1214M32 is designed for L-Band radar systems operating over
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IB1214M32
IB1214M32
IB1214M32-REV-NC-DS-REV-B
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IBP2731M200
Abstract: No abstract text available
Text: Part Number: Integra IBP2731M200 TECHNOLOGIES, INC. S-Band Radar Pallet Silicon Bipolar − Ultra-high fT Part number IBP2731M200 is a 50 Ω matched high power pulsed radar pallet amplifier for S-Band radar systems operating over the instantaneous bandwidth
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IBP2731M200
IBP2731M200
IBP2731M200-REV-NC-DS-REV-B
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Untitled
Abstract: No abstract text available
Text: Part Number: Integra IB1214M150 TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT L-Band Radar Transistor Class C Operation − High Efficiency The high power pulsed radar transistor device part number IB1214M150 is designed for L-Band radar systems operating
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IB1214M150
IB1214M150-REV-NC-DS-REV-A
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Untitled
Abstract: No abstract text available
Text: Part Number: Integra IB2226M160 Preliminary TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT S-Band Radar Transistor Class C Operation − High Efficiency The high power pulsed radar transistor device part number IB2226M160 is designed for S-Band radar systems operating
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IB2226M160
IB2226M160
IB2226M2160
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Untitled
Abstract: No abstract text available
Text: Part Number: IBP3135MH200 Preliminary Integra TECHNOLOGIES, INC. S-Band Radar Pallet Silicon Bipolar − Ultra-high fT Part number IBP3135MH200 is a 50 Ω matched high power pulsed radar pallet amplifier for S-Band radar systems operating over the instantaneous bandwidth
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IBP3135MH200
IBP3135MH200
IBP3135MH200-REV-PR1-DS-REV-NC
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Untitled
Abstract: No abstract text available
Text: Part Number: Integra IB1214M55 TECHNOLOGIES, INC. Silicon Bipolar Ultra-high fT L-Band Radar Transistor Class C Operation High Efficiency The high power pulsed radar transistor device part number IB1214M55 is designed for L-Band radar systems operating over
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IB1214M55
IB1214M55
IB1214M55-REV-NC-DS-REV-C
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Untitled
Abstract: No abstract text available
Text: Part Number: Integra IB0810M50 TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT L-Band Radar Transistor Class C Operation − High Efficiency The high power pulsed radar transistor device part number IB0810M50 is designed for L-Band radar systems operating
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IB0810M50
IB0810M50
IB0810M50-REV-NC-DS-REV-A
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Untitled
Abstract: No abstract text available
Text: Part Number: Integra IBP3134M220 TECHNOLOGIES, INC. S-Band Radar Pallet Silicon Bipolar − Ultra-high fT Part number IBP3134M220 is a 50 Ω matched high power pulsed radar pallet amplifier for S-Band radar systems operating over the instantaneous bandwidth
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IBP3134M220
IBP3134M220
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IB3135
Abstract: No abstract text available
Text: Part Number: Integra IB3135MH5 TECHNOLOGIES, INC. Silicon Bipolar Ultra-high fT S-Band Radar Transistor Class C Operation High Efficiency The high power pulsed radar transistor device part number IB3135MH5 is designed for S-Band radar systems operating
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IB3135MH5
IB3135MH5
100us
IB3135MH5-
IB3135
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Untitled
Abstract: No abstract text available
Text: Part Number: Integra IB3135MH65 TECHNOLOGIES, INC. Silicon Bipolar Ultra-high f T S-Band Radar Transistor Class C Operation High Efficiency The high power pulsed radar transistor device part number IB3135MH65 is designed for S-Band radar systems operating over the
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IB3135MH65
IB3135MH65
IB3135MH65-REV-NC-DS-REV-NC
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Untitled
Abstract: No abstract text available
Text: Part Number: Integra IBP3135M150 TECHNOLOGIES, INC. S-Band Radar Pallet Amplifier Silicon Bipolar Technology − Ultra-high fT Class C Operation − High Efficiency Part number IBP3135M150 is a 50 Ω matched high power pulsed radar pallet amplifier for S-Band radar systems
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IBP3135M150
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IBP3135M150-REV-NC-DS-REV-NC
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Untitled
Abstract: No abstract text available
Text: Part Number: Integra IB2934M100 Preliminary TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT S-Band Radar Transistor Class C Operation − High Efficiency The high power pulsed radar transistor device part number IB2934M100 is designed for S-Band radar systems operating over
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IB2934M100
IB2934M100
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Untitled
Abstract: No abstract text available
Text: Part Number: Integra IB2226MH15 TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT S-Band Radar Transistor Class C Operation − High Efficiency The high power pulsed radar transistor device part number IB2226MH15 is designed for S-Band radar systems operating over the
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IB2226MH15
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IB2226MH15-REV-NC-DS-REV-NC
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HETERODYNE WAVE METER CIRCUITS
Abstract: RD301 transmitter calibration certificate RD301A radar level transmitter magnetron ns radar radar detector receiver magnetron ns radar datasheet Magnetron pulse width 20 ns power supply for magnetron
Text: Avionics RD-301A Weather Radar Test Set The RD-301A Weather Radar Test Set satisfies simulation requirements for new generation noncoherent radar systems • Automatic transmitter magnetron frequency tracking and digital read-out • Internal/external modulation for simulating target scintillation for turbulence
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RD-301A
RD-301A
HETERODYNE WAVE METER CIRCUITS
RD301
transmitter calibration certificate
RD301A
radar level transmitter
magnetron ns radar
radar detector receiver
magnetron ns radar datasheet
Magnetron pulse width 20 ns
power supply for magnetron
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Untitled
Abstract: No abstract text available
Text: Part Number: Integra IB3135MH75 TECHNOLOGIES, INC. Silicon Bipolar Ultra-high f T S-Band Radar Transistor Class C Operation High Efficiency The high power pulsed radar transistor device part number IB3135MH75 is designed for S-Band radar systems operating over the
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IB3135MH75
IB3135MH75
IB3135MH75-REV-NC-DS-REV-A
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Untitled
Abstract: No abstract text available
Text: Part Number: Integra IB450S500 TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT UHF Radar Transistor Class C Operation − High Efficiency The high power pulsed radar transistor device part number IB450S500 is designed for UHF radar systems operating at 450 MHz. While operating
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IB450S500
IB450S500
IB450S500-REV-NC-DS-REV-C
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Untitled
Abstract: No abstract text available
Text: Part Number: Integra IB2931MH55 TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT S-Band Radar Transistor Class C Operation − High Efficiency The high power pulsed radar transistor device part number IB2931MH55 is designed for S-Band radar systems operating over the
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IB2931MH55
IB2931MH55
IB2931MH55-REV-NC-DS-REV-NC
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bd 142 transistor
Abstract: No abstract text available
Text: Part Number: Integra IB0810M12 TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT L-Band Radar Transistor Class C Operation − High Efficiency The high power pulsed radar transistor device part number IB0810M12 is designed for L-Band radar systems operating over the instantaneous
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IB0810M12
IB0810M12
IB0810M12-REV-NC-DS-REV-A
bd 142 transistor
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Untitled
Abstract: No abstract text available
Text: Part Number: Integra IB1214M6 Preliminary TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT L-Band Radar Transistor Class C Operation − High Efficiency The high power pulsed radar transistor device part number IB1214M6 is designed for L-Band radar systems operating over
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IB1214M6
IB1214M6
IB1214M6-REV-PR1-DS-REV-B
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