missile seeker
Abstract: varactor diode for x band radar radar detector leakage police radar detector Q4000 GaAs impatt diode W band
Text: MA45200 Series Silicon Abrupt Junction Tuning Varactors Features • HIGH Q ■ LOW LEAKAGE ■ AVAILABLE IN CHIP FORM 30 J — 'V 3 El ~ r ■ ■ ■ ■ AVAILABLE IN CERAMIC PACKAGES CUSTOM DESIGNS AVAILABLE LOW POST TUNING DRIFT FREQUENCY RANGE VHF —
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MA45200
missile seeker
varactor diode for x band radar
radar detector leakage
police radar detector
Q4000
GaAs impatt diode W band
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missile seeker
Abstract: police radar detector police radar detector detector m/a-com impatt police radar detector local oscillator frequency seeker gunn diode x band radar 46470 model impatt MA45234
Text: M/ A - C O M S E M I C O N D t B R L N G T O N /ysKcm 11 _ ] > • S b M 2 2 1 M 00 ]:L2M2 1 ■ M I C ' . . . " MA45200 Series Silicon Abrupt Junction Tuning Varactors Features ■ HIGH Q ■ LOW LEAKAGE ■ AVAILABLE IN CHIP FORM ■ AVAILABLE IN CERAMIC PACKAGES
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SbM2214
0G01S42
MA45200
missile seeker
police radar detector
police radar detector detector
m/a-com impatt
police radar detector local oscillator frequency
seeker
gunn diode x band radar
46470 model
impatt
MA45234
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Types of Radar Antenna
Abstract: radar system with circuit diagram BPF filter rf diagram radar circuit tp 4056 tp 4056 datasheet radar frontend chip ghz radar detector detector 10-25 ghz fpga radar echo mixer circuit diagram
Text: IPN Progress Report 42-158 August 15, 2004 Design and Performance of a Miniature Radar L-Band Transceiver D. McWatters,1 D. Price,2 and W. Edelstein1 Radar electronics developed for past JPL space missions historically had been custom designed and as such, given budgetary, time, and risk constraints, had not
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25-GHz
Types of Radar Antenna
radar system with circuit diagram
BPF filter rf
diagram radar circuit
tp 4056
tp 4056 datasheet
radar frontend chip ghz
radar detector detector 10-25 ghz
fpga radar
echo mixer circuit diagram
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gunn diode x band amplifier
Abstract: RS-8960 gunn diode x band radar X-band doppler radar module 308-017 rs gunn diode radar module RS8960 Gunn Diode at power supply circuit microwave intruder alarm diagram of gunn diode
Text: E/F3598 Issued July 1985 Doppler module Stocknumber 308-017 The RS 8960 is an X-band Doppler radar module intended for indoor applications and designed specifically for detecting movement of a remote target by detecting Doppler-shift in reflected microwave
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E/F3598
R/3598
gunn diode x band amplifier
RS-8960
gunn diode x band radar
X-band doppler radar module
308-017 rs
gunn diode radar module
RS8960
Gunn Diode at power supply circuit
microwave intruder alarm
diagram of gunn diode
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X-band doppler radar module
Abstract: RS-8960 308-017 rs metal detector using 555 timer diagram of gunn diode Gunn Diode at power supply circuit 747 opamp gunn diode radar gunn diode radar module gunn diode x band amplifier
Text: Issued March 1997 232-2324 Data Pack E/F Doppler module Data Sheet RS stock number 308-017 The RS 8960 is an X-band Doppler radar module intended for indoor applications and designed specifically for detecting movement of a remote target by detecting Doppler-shift in reflected microwave radiation.
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R/3598
X-band doppler radar module
RS-8960
308-017 rs
metal detector using 555 timer
diagram of gunn diode
Gunn Diode at power supply circuit
747 opamp
gunn diode radar
gunn diode radar module
gunn diode x band amplifier
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RS-8960
Abstract: diagram of gunn diode RS Microwave Company 747 opamp X-band doppler radar module metal detector using 555 timer gunn diode radar module radar gunn diode 308-017 rs s band doppler mixer
Text: Issued July 1985 003-598 Data Pack E/F Doppler module Data Sheet RS stock number 308-017 The RS 8960 is an X-band Doppler radar module intended for indoor applications and designed specifically for detecting movement of a remote target by detecting Doppler-shift in reflected microwave radiation.
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Untitled
Abstract: No abstract text available
Text: Direct Modulation/Waveform Generating, 6.1 GHz Fractional-N Frequency Synthesizer ADF4158 Data Sheet FEATURES GENERAL DESCRIPTION Radio frequency RF bandwidth to 6.1 GHz 25-bit fixed modulus allows subhertz frequency resolution Frequency and phase modulation capability
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ADF4158
25-bit
D08728-0-2/14
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sampling mixer
Abstract: passive Radar block diagram Ku-band Step Recovery Multipliers Wideband Mixer upconverting and downconverting miteq preamplifiers
Text: MIXER SUBSYSTEMS Questions and Answers about. MIXER SUBSYSTEMS Q1: How does the Special Mixer Product Department define a mixer subsystem? A1: Generally, the subsystem consists of one or more unique core mixer products from catalog sections 1 through 4, with added input or output components such as amplifiers, filters, etc. or simply phase and amplitude matched
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ARS0506L
sampling mixer
passive Radar block diagram
Ku-band Step Recovery Multipliers
Wideband Mixer upconverting and downconverting
miteq preamplifiers
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Untitled
Abstract: No abstract text available
Text: Direct Modulation/Waveform Generating, 6.1 GHz Fractional-N Frequency Synthesizer ADF4158 Data Sheet FEATURES GENERAL DESCRIPTION Radio frequency RF bandwidth to 6.1 GHz 25-bit fixed modulus allows subhertz frequency resolution Frequency and phase modulation capability
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ADF4158
25-bit
D08728-0-3/14
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radar detector 10.5 ghz local oscillator
Abstract: Silicon Point Contact Mixer Diodes dmc5910
Text: Silicon Bonded and Pressure Contact Schottky Barrier Mixer Diodes Features Bonded Junctions for Reliability Low 1/f Noise Low Turn On for Starved L.O. Applications Planar Passivated Dice for Reliability Uniform Characteristics Description Applications Alpha’s silicon Schottky barrier mixer diodes are de
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40GHz
MF5078-024
DMF5078-025
DMF4039-024
DMF4039-025
DMF5078-018
DMF5078-019
DMF4039-018
DMF4039-019
DMF5078-012
radar detector 10.5 ghz local oscillator
Silicon Point Contact Mixer Diodes
dmc5910
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FMCW circuit
Abstract: FMCW Radar ADF4158 application notes automotive radar ghz cmos
Text: Direct Modulation/Waveform Generating, 6.1 GHz Fractional-N Frequency Synthesizer ADF4158 Data Sheet FEATURES GENERAL DESCRIPTION RF bandwidth to 6.1 GHz 25-bit fixed modulus allows subhertz frequency resolution Frequency and phase modulation capability Sawtooth and triangular waveforms in the frequency domain
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25-bit
ADF4158
ADF4158
D08728-0-3/13
FMCW circuit
FMCW Radar
ADF4158 application notes
automotive radar ghz cmos
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radar detector 10.5 ghz local oscillator
Abstract: DMC5501 DMF-6106 DMF4039 dmf6106 005801 DMF6130-013 Silicon Point Contact Mixer Diodes
Text: Silicon Bonded and Pressure Contact Schottky Barrier Mixer Diodes ALPHA IND/ S E M I C O N D U C T O R 0 5 A S M M 3 Q D D l l M b 3bfl • ALP 43E D * Features T í á,í' ■ ■ ■ ■ ■ 07-07 Bonded Junctions for Reliability Low 1/f Noise Low Turn On for Starved L.O. Applications
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40GHz
in018
DMF4039-019
DMF5078-012
DMF5078-013
DMF4039-012
DMF4039-013
DMF5078-006
DMF5078-007
DMF4039-006
radar detector 10.5 ghz local oscillator
DMC5501
DMF-6106
DMF4039
dmf6106
005801
DMF6130-013
Silicon Point Contact Mixer Diodes
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Untitled
Abstract: No abstract text available
Text: ALPHA I'ND/ SEMICONDUC TOR 33E D • 0S65H43 DDDD7S3 3 * A L P Silicon Bonded and Pressure Contact Schottky Barrier Mixer Diodes -v-o-7-0-1 Features ■ ■ ■ ■ ■ Bonded Junctions for Reliability Low 1/f Noise Low Turn On for Starved L.O. Applications
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0S65H43
P-041
P-076
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fmcw generation
Abstract: FMCW circuit DB9 db15 adf4159 EVAL-ADF4159EB1Z sd 4093 Rm2 tr1
Text: Direct Modulation/Fast Waveform Generating 13 GHz Fractional-N Frequency Synthesizer ADF4159 Preliminary Technical Data FEATURES GENERAL DESCRIPTION RF bandwidth to 13 GHz High and low speed FMCW Ramps Generation 25-bit fixed modulus allows sub-hertz frequency resolution
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25-bit
110MHz
ADF4159
MO-220-WGGD.
24-Lead
CP-24-7)
12108-A
PR10849-0-6/12
fmcw generation
FMCW circuit
DB9 db15
adf4159
EVAL-ADF4159EB1Z
sd 4093
Rm2 tr1
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Untitled
Abstract: No abstract text available
Text: Direct Modulation/Waveform Generating, 6.1 GHz Fractional-N Frequency Synthesizer ADF4158 Data Sheet FEATURES GENERAL DESCRIPTION RF bandwidth to 6.1 GHz 25-bit fixed modulus allows subhertz frequency resolution Frequency and phase modulation capability Sawtooth and triangular waveforms in the frequency domain
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ADF4158
25-bit
D08728-0-6/12
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FMCW circuit
Abstract: FMCW Radar ADF4158 application notes EVAL-ADF4158EB1Z 4093 oscillator FMCW ADF4158 Rm2 tr1 application
Text: Direct Modulation/Waveform Generating, 6.1 GHz Fractional-N Frequency Synthesizer ADF4158 Data Sheet FEATURES GENERAL DESCRIPTION RF bandwidth to 6.1 GHz 25-bit fixed modulus allows subhertz frequency resolution Frequency and phase modulation capability Sawtooth and triangular waveforms in the frequency domain
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25-bit
ADF4158
ADF4158
D08728-0-6/12
FMCW circuit
FMCW Radar
ADF4158 application notes
EVAL-ADF4158EB1Z
4093 oscillator
FMCW
Rm2 tr1 application
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4093 oscillator
Abstract: FMCW circuit FMCW Radar fmcw generation radar detector detector 10-25 ghz
Text: Direct Modulation/Waveform Generating, 6.1 GHz Fractional-N Frequency Synthesizer ADF4158 Data Sheet FEATURES GENERAL DESCRIPTION RF bandwidth to 6.1 GHz 25-bit fixed modulus allows subhertz frequency resolution Frequency and phase modulation capability Sawtooth and triangular waveforms in the frequency domain
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25-bit
ADF4158
ADF4158
ADF4158CCPZ
ADF4158CCPZ-RL7
EVAL-ADF4158EB1Z
24-Lead
12108-A
CP-24-7
4093 oscillator
FMCW circuit
FMCW Radar
fmcw generation
radar detector detector 10-25 ghz
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5503 dm
Abstract: DMF6130B DMF-6130B dm 465 k and ka band radar detector P041 005801 DMC550 p029 DMF6130BM
Text: 0585443 ALPHA I , I . 03 - j T | DSSS4 43 □□OD3bc5 2 WT-> • | 3 -r T * -J ~ / ~ O / Silicon Bonded and Pressure Contact - Schottky Barrier Mixer Diodes ALPHA INI/ SEMICONDUCTOR Features • Bonded Junctions for Reliability • Low 1/f N o ise • Low Turn O n for Starved L.O. Applications
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B4009
F6724
F5078Y
105-JAN
P-017
P-075
5503 dm
DMF6130B
DMF-6130B
dm 465
k and ka band radar detector
P041
005801
DMC550
p029
DMF6130BM
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silicon epitaxial mesa diode
Abstract: construction of varactor diode Parametric Varactor diodes
Text: GEC PLES S EY S l M I t . O % I U C I O K S CT3501-1.2 TUNING VARACTORS - INTRODUCTION INTR O D U C TIO N Varactor tuning diodes are voltage variable capacitors, designed to provide electronic tuning of oscillators and filters. The device employs the variable depletion capacitance of a
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CT3501-1
13GHz
silicon epitaxial mesa diode
construction of varactor diode
Parametric Varactor diodes
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Untitled
Abstract: No abstract text available
Text: Direct Modulation/Fast Waveform Generating, 13 GHz, Fractional-N Frequency Synthesizer ADF4159 Data Sheet FEATURES GENERAL DESCRIPTION RF bandwidth to 13 GHz High and low speed FMCW ramp generation 25-bit fixed modulus allows subhertz frequency resolution
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25-bit
ADF4159
D10849-0-9/13
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PDF
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Untitled
Abstract: No abstract text available
Text: Direct Modulation/Fast Waveform Generating, 13 GHz, Fractional-N Frequency Synthesizer ADF4159 Data Sheet FEATURES GENERAL DESCRIPTION RF bandwidth to 13 GHz High and low speed FMCW ramp generation 25-bit fixed modulus allows subhertz frequency resolution
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ADF4159
25-bit
D10849-0-11/13
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AD8283
Abstract: Rm2 tr1 FMCW Radar FMCW circuit
Text: Direct Modulation/Fast Waveform Generating, 13 GHz, Fractional-N Frequency Synthesizer ADF4159 Data Sheet FEATURES GENERAL DESCRIPTION RF bandwidth to 13 GHz High and low speed FMCW ramp generation 25-bit fixed modulus allows subhertz frequency resolution
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25-bit
ADF4159
ADF41s
ADF4159CCPZ
ADF4159CCPZ-RL7
EV-ADF4159EB2Z
EV-ADF4159EB3Z
24-Lead
6-11-2012-A
AD8283
Rm2 tr1
FMCW Radar
FMCW circuit
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ADF4158 application notes
Abstract: ADF4158 FMCW Radar dse1 FMCW circuit FMCW fmcw generation 8728* dac ADC DS3 db26
Text: Direct Modulation/Waveform Generating, 6.1 GHz Fractional-N Frequency Synthesizer ADF4158 FEATURES GENERAL DESCRIPTION RF bandwidth to 6.1 GHz 25-bit fixed modulus allows subhertz frequency resolution Frequency and phase modulation capability Sawtooth and triangular waveforms in the frequency domain
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ADF4158
25-bit
ADF4158
ADF4158CCPZ
ADF4158CCPZ-RL7
EVAL-ADF4158EB1Z
24-Lead
CP-24-7
ADF4158 application notes
FMCW Radar
dse1
FMCW circuit
FMCW
fmcw generation
8728* dac
ADC DS3
db26
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DTM180AA
Abstract: DT-408 STD8018A LP05018 LS1012 DTM180AB
Text: ZERO-BIAS SCHOTTKY DIODE DETECTORS 100 KHz - 50 GHz FEATURES • No Bias Required • Matched Input for Excellent VSWR* • Extremely Flat Frequency Response* • Very High Sensitivity DZ Series * (DZR & DZM Series) APPLICATIONS ENVIRONMENTAL RATINGS
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200mW
100mW
DTM180AA
DT-408
STD8018A
LP05018
LS1012
DTM180AB
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