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    RADAR CIRCUIT Search Results

    RADAR CIRCUIT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    D1U74T-W-1600-12-HB4AC Murata Manufacturing Co Ltd AC/DC 1600W, Titanium Efficiency, 74 MM , 12V, 12VSB, Inlet C20, Airflow Back to Front, RoHs Visit Murata Manufacturing Co Ltd
    D1U54T-M-2500-12-HB4C Murata Manufacturing Co Ltd 2.5KW 54MM AC/DC 12V WITH 12VDC STBY BACK TO FRONT AIR Visit Murata Manufacturing Co Ltd
    MHM411-21 Murata Manufacturing Co Ltd Ionizer Module, 100-120VAC-input, Negative Ion Visit Murata Manufacturing Co Ltd
    SCL3400-D01-1 Murata Manufacturing Co Ltd 2-axis (XY) digital inclinometer Visit Murata Manufacturing Co Ltd
    SCC433T-K03-004 Murata Manufacturing Co Ltd 2-Axis Gyro, 3-axis Accelerometer combination sensor Visit Murata Manufacturing Co Ltd

    RADAR CIRCUIT Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    radar 77 ghz

    Abstract: No abstract text available
    Text: Analog, Mixed Signal and Power Management MRD2001 77 GHz Radar Transceiver Chipset High-resolution 77 GHz radar voltage-controlled oscillator VCO , receiver, transmitter chipset Target Applications Overview • Long-range radar (LRR), mid-range radar (MRR) and short-range radar


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    MRD2001 MRD2001FS radar 77 ghz PDF

    MICROWAVE ASSOCIATES

    Abstract: Design of H.F. Wideband Power Transformers varian klystron 10 GHz gunn diode double balanced mixer RHG melabs circulator radar gunn diode Gunn Diode gunn diode varian design of multi section coupler
    Text: PASSIVE COMPONENTS: A BRIEF HISTORY T Fig. 1 The birth of radar. Courtesy of Varian Associates. ▼ he microwave industry is tied to the birth of radar. Figure 1 is a whimsical look at the birth of radar as portrayed in a 1960s ad for Bomac tubes. In reality, radar


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    1960s MICROWAVE ASSOCIATES Design of H.F. Wideband Power Transformers varian klystron 10 GHz gunn diode double balanced mixer RHG melabs circulator radar gunn diode Gunn Diode gunn diode varian design of multi section coupler PDF

    radar sensor

    Abstract: microwave RADAR motion sensors RADAR-IPM-165
    Text: DATA SHEET Radar based motion detector module RADAR-IPM-165 Description Description Characteristic features • Universal HF-module K-Band Transceiver , without NF-Signal amplifier • Innovative Radar operating principle: • High sensitivity on slightest movement


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    RADAR-IPM-165 D-78166 radar sensor microwave RADAR motion sensors RADAR-IPM-165 PDF

    Untitled

    Abstract: No abstract text available
    Text: Part Number: Integra IB1214M375 Preliminary TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT L-Band Radar Transistor The high power pulsed radar transistor device part number IB1214M375 is designed for L-Band radar systems operating over the instantaneous bandwidth of


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    IB1214M375 IB1214M375 IB1214M375-REV-PR1-DS-REV-NC PDF

    Untitled

    Abstract: No abstract text available
    Text: Part Number: Integra IB2731MH110 TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT S-Band Radar Transistor Class C Operation − High Efficiency The high power pulsed radar transistor device part number IB2731MH110 is designed for S-Band radar systems operating over


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    IB2731MH110 IB2731MH110 IB2731MH110-REV-NC-DS-REV-B PDF

    Untitled

    Abstract: No abstract text available
    Text: Integra Part Number: IBP2729MH300 TECHNOLOGIES, INC. S-Band Radar Pallet Silicon Bipolar − Ultra-high fT Part number IBP2729MH300 is a 50 Ω matched high power pulsed radar pallet amplifier for S-Band radar systems operating over the instantaneous bandwidth


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    IBP2729MH300 IBP2729MH300 IBP2729MH300-REV-NC-DS-REV-A PDF

    Untitled

    Abstract: No abstract text available
    Text: Part Number: Integra IB1214M32 TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT L-Band Radar Transistor Class C Operation − High Efficiency The high power pulsed radar transistor device part number IB1214M32 is designed for L-Band radar systems operating over


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    IB1214M32 IB1214M32 IB1214M32-REV-NC-DS-REV-B PDF

    IBP2731M200

    Abstract: No abstract text available
    Text: Part Number: Integra IBP2731M200 TECHNOLOGIES, INC. S-Band Radar Pallet Silicon Bipolar − Ultra-high fT Part number IBP2731M200 is a 50 Ω matched high power pulsed radar pallet amplifier for S-Band radar systems operating over the instantaneous bandwidth


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    IBP2731M200 IBP2731M200 IBP2731M200-REV-NC-DS-REV-B PDF

    Untitled

    Abstract: No abstract text available
    Text: Part Number: Integra IB1214M150 TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT L-Band Radar Transistor Class C Operation − High Efficiency The high power pulsed radar transistor device part number IB1214M150 is designed for L-Band radar systems operating


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    IB1214M150 IB1214M150 IB1214M150-REV-NC-DS-REV-A PDF

    Untitled

    Abstract: No abstract text available
    Text: Part Number: Integra IB2226M160 Preliminary TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT S-Band Radar Transistor Class C Operation − High Efficiency The high power pulsed radar transistor device part number IB2226M160 is designed for S-Band radar systems operating


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    IB2226M160 IB2226M160 IB2226M2160 IB2226M160-REV-PR1-DS-REV-NC PDF

    Untitled

    Abstract: No abstract text available
    Text: Part Number: IBP3135MH200 Preliminary Integra TECHNOLOGIES, INC. S-Band Radar Pallet Silicon Bipolar − Ultra-high fT Part number IBP3135MH200 is a 50 Ω matched high power pulsed radar pallet amplifier for S-Band radar systems operating over the instantaneous bandwidth


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    IBP3135MH200 IBP3135MH200 IBP3135MH200-REV-PR1-DS-REV-NC PDF

    Untitled

    Abstract: No abstract text available
    Text: Part Number: Integra IB1214M55 TECHNOLOGIES, INC. Silicon Bipolar  Ultra-high fT L-Band Radar Transistor Class C Operation  High Efficiency The high power pulsed radar transistor device part number IB1214M55 is designed for L-Band radar systems operating over


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    IB1214M55 IB1214M55 IB1214M55-REV-NC-DS-REV-C PDF

    Untitled

    Abstract: No abstract text available
    Text: Part Number: Integra IB0810M50 TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT L-Band Radar Transistor Class C Operation − High Efficiency The high power pulsed radar transistor device part number IB0810M50 is designed for L-Band radar systems operating


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    IB0810M50 IB0810M50 IB0810M50-REV-NC-DS-REV-A PDF

    Untitled

    Abstract: No abstract text available
    Text: Part Number: Integra IBP3134M220 TECHNOLOGIES, INC. S-Band Radar Pallet Silicon Bipolar − Ultra-high fT Part number IBP3134M220 is a 50 Ω matched high power pulsed radar pallet amplifier for S-Band radar systems operating over the instantaneous bandwidth


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    IBP3134M220 IBP3134M220 IBP3134M220-REV-NC-DS-REV-NC PDF

    RD-301A

    Abstract: Magnetron pulse width 20 ns magnetron ns radar front end radar 77 ghz receiver HETERODYNE WAVE METER CIRCUITS transmitter calibration certificate RD301
    Text: issue3.qxd 02/Dec/2004 10:40 Page 1 Avionics RD-301A Weather Radar Test Set The RD-301A Weather Radar Test Set satisfies simulation requirements for new generation noncoherent radar systems • Automatic transmitter magnetron frequency tracking and digital read-out


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    02/Dec/2004 RD-301A RD-301A Magnetron pulse width 20 ns magnetron ns radar front end radar 77 ghz receiver HETERODYNE WAVE METER CIRCUITS transmitter calibration certificate RD301 PDF

    Untitled

    Abstract: No abstract text available
    Text: Part Number: Integra IB3135MH65 TECHNOLOGIES, INC. Silicon Bipolar  Ultra-high f T S-Band Radar Transistor Class C Operation  High Efficiency The high power pulsed radar transistor device part number IB3135MH65 is designed for S-Band radar systems operating over the


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    IB3135MH65 IB3135MH65 IB3135MH65-REV-NC-DS-REV-NC PDF

    Untitled

    Abstract: No abstract text available
    Text: Part Number: Integra IBP3135M150 TECHNOLOGIES, INC. S-Band Radar Pallet Amplifier Silicon Bipolar Technology − Ultra-high fT Class C Operation − High Efficiency Part number IBP3135M150 is a 50 Ω matched high power pulsed radar pallet amplifier for S-Band radar systems


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    IBP3135M150 IBP3135M150 IBP3135M150-REV-NC-DS-REV-NC PDF

    Untitled

    Abstract: No abstract text available
    Text: Part Number: Integra IB2934M100 Preliminary TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT S-Band Radar Transistor Class C Operation − High Efficiency The high power pulsed radar transistor device part number IB2934M100 is designed for S-Band radar systems operating over


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    IB2934M100 IB2934M100 IB2934M100-REV-PR1-DS-REV-NC PDF

    Untitled

    Abstract: No abstract text available
    Text: Part Number: Integra IB2226MH15 TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT S-Band Radar Transistor Class C Operation − High Efficiency The high power pulsed radar transistor device part number IB2226MH15 is designed for S-Band radar systems operating over the


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    IB2226MH15 IB2226MH15 IB2226MH15-REV-NC-DS-REV-NC PDF

    HETERODYNE WAVE METER CIRCUITS

    Abstract: RD301 transmitter calibration certificate RD301A radar level transmitter magnetron ns radar radar detector receiver magnetron ns radar datasheet Magnetron pulse width 20 ns power supply for magnetron
    Text: Avionics RD-301A Weather Radar Test Set The RD-301A Weather Radar Test Set satisfies simulation requirements for new generation noncoherent radar systems • Automatic transmitter magnetron frequency tracking and digital read-out • Internal/external modulation for simulating target scintillation for turbulence


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    RD-301A RD-301A HETERODYNE WAVE METER CIRCUITS RD301 transmitter calibration certificate RD301A radar level transmitter magnetron ns radar radar detector receiver magnetron ns radar datasheet Magnetron pulse width 20 ns power supply for magnetron PDF

    oscilloscope

    Abstract: radar tube oszilloskope
    Text: DB 16-22 DG 16-22 DP 16-22 PHILIPS Rectangular CATHODE-RAY TUBE for radar or oscilloscopes TUBE A RAYONS CATHODIQUES rectangulaire pour le radar ou pour oscilloscopes Rechteckige KATODENSTRAHLRÖHRE für Radar oder Oszilloskope Heating : Indirect by A.C. or D.C.


    OCR Scan
    DB16-22 DG16-22 DG16-22 DP16-22 oscilloscope radar tube oszilloskope PDF

    Untitled

    Abstract: No abstract text available
    Text: Part Number: Integra IB3135MH75 TECHNOLOGIES, INC. Silicon Bipolar  Ultra-high f T S-Band Radar Transistor Class C Operation  High Efficiency The high power pulsed radar transistor device part number IB3135MH75 is designed for S-Band radar systems operating over the


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    IB3135MH75 IB3135MH75 IB3135MH75-REV-NC-DS-REV-A PDF

    Untitled

    Abstract: No abstract text available
    Text: Part Number: Integra IB450S500 TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT UHF Radar Transistor Class C Operation − High Efficiency The high power pulsed radar transistor device part number IB450S500 is designed for UHF radar systems operating at 450 MHz. While operating


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    IB450S500 IB450S500 IB450S500-REV-NC-DS-REV-C PDF

    Untitled

    Abstract: No abstract text available
    Text: Part Number: Integra IB2931MH55 TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT S-Band Radar Transistor Class C Operation − High Efficiency The high power pulsed radar transistor device part number IB2931MH55 is designed for S-Band radar systems operating over the


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    IB2931MH55 IB2931MH55 IB2931MH55-REV-NC-DS-REV-NC PDF