RA45H7687M1
Abstract: RA45H8994M1 AN-900-027-B
Text: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-900-027-B Date : 10th May. 2007 Rev. date : 30th Jun. 2010 Prepared : K. Mori Confirmed : S.Kametani Taking charge of Silicon RF by Miyoshi Electronics SUBJECT: AM-AM, AM-PM and Vgg2-PM for RA45H8994M1 and RA45H7687M1
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AN-900-027-B
RA45H8994M1
RA45H7687M1
RA45H8994M1/7687M1
50ohm,
06XXA
835MHz
RA45H7687M1
AN-900-027-B
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RF MOSFET MODULE
Abstract: RA45H7687M1 RA45H7687M1-101
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA45H7687M1 RoHS Compliance, 763-870MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA45H7687M1 is a 45-watt RF MOSFET Amplifier Module for 12.8-volt mobile radios that operate in the 763- to
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RA45H7687M1
763-870MHz
RA45H7687M1
45-watt
870-MHz
RF MOSFET MODULE
RA45H7687M1-101
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RA45H7687M1
Abstract: mitsubishi rf sirf 1v GG13
Text: MITSUBISHI RF POWER SEMICONDUCTORS APPLICATION NOTE Document NO. AN-900-026 Date : 21st Feb. 2007 Prepared : K. Mori Confirmed : S. Kametani Taking charge of SiRF by Miyoshi Electronics SUBJECT: Recommendation of the output power control for RA45H7687M1
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AN-900-026
RA45H7687M1
RA45H7687M1,
RA45H7687M1
20dBm
AN-900-026
806MHz
mitsubishi rf
sirf 1v
GG13
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RA45H7687M1
Abstract: RA45H7687M1-101 45WATT DD 128 D transistor
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA45H7687M1 RoHS Compliance, 764-870MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA45H7687M1 is a 45-watt RF MOSFET Amplifier Module for 12.8-volt mobile radios that operate in the 764- to
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RA45H7687M1
764-870MHz
RA45H7687M1
45-watt
870-MHz
RA45H7687M1-101
45WATT
DD 128 D transistor
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Untitled
Abstract: No abstract text available
Text: < Silicon RF Power Modules > RA45H7687M1 RoHS Compliance, 763-870MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA45H7687M1 is a 45-watt RF MOSFET Amplifier Module for 12.8-volt mobile radios that operate in the 763- to 870-MHz range. The battery can be connected directly to the drain of the
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RA45H7687M1
763-870MHz
RA45H7687M1
45-watt
870-MHz
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d408
Abstract: DD 128 D transistor GG13 LT 7212 MHz-860 RA45H7687M1 RA45H7687M1-101 DD 128 transistor
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA45H7687M1 RoHS Compliance, 764-870MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA45H7687M1 is a 45-watt RF MOSFET Amplifier Module for 12.8-volt mobile radios that operate in the 764- to
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PDF
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RA45H7687M1
764-870MHz
RA45H7687M1
45-watt
870-MHz
d408
DD 128 D transistor
GG13
LT 7212
MHz-860
RA45H7687M1-101
DD 128 transistor
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RA45H7687M1
Abstract: RA45H7687M1-101
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA45H7687M1 RoHS Compliance, 763-870MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA45H7687M1 is a 45-watt RF MOSFET Amplifier Module for 12.8-volt mobile radios that operate in the 763- to
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Original
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PDF
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RA45H7687M1
763-870MHz
RA45H7687M1
45-watt
870-MHz
RA45H7687M1-101
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RA45H7687M1
Abstract: RA45H8994M1 PIN3D mitsubishi Lot No
Text: APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-900-027-A Date : 10th May. 2007 Rev. date : 7th Jan. 2010 Prepared : K. Mori Confirmed : S.Kametani Taking charge of Silicon RF by Miyoshi Electronics SUBJECT: AM-AM, AM-PM and Vgg2-PM for RA45H8994M1 and RA45H7687M1
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AN-900-027-A
RA45H8994M1
RA45H7687M1
RA45H8994M1/7687M1
50ohm,
06XXA
835MHz
RA45H7687M1
PIN3D
mitsubishi Lot No
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mitsubishi Lot No
Abstract: AN-900-027 RA45H7687M1 RA45H8994M1 MITSUBISHI APPLICATION NOTE RF POWER
Text: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-900-027 Date : 10th May. 2007 Prepared : K. Mori Confirmed : S.Kametani Taking charge of SiRF by Miyoshi Electronics SUBJECT: AM-AM, AM-PM and Vgg2-PM for RA45H8994M1 and RA45H7687M1 GENERAL:
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AN-900-027
RA45H8994M1
RA45H7687M1
RA45H8994M1/7687M1
50ohm,
06XXA
835MHz
mitsubishi Lot No
AN-900-027
RA45H7687M1
MITSUBISHI APPLICATION NOTE RF POWER
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Untitled
Abstract: No abstract text available
Text: < Silicon RF Power Modules > RA45H7687M1 RoHS Compliance, 763-870MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA45H7687M1 is a 45-watt RF MOSFET Amplifier Module for 12.8-volt mobile radios that operate in the 763- to 870-MHz range. The battery can be connected directly to the drain of the
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RA45H7687M1
763-870MHz
RA45H7687M1
45-watt
870-MHz
Oct2011
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341V
Abstract: RA45H7687M1 22an VGG13
Text: APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-900-026-A Date : 21st Feb. 2007 Rev.date : 7thJan. 2010 Prepared : K. Mori Confirmed : S. Kametani Taking charge of Silicon RF by Miyoshi Electronics SUBJECT: Recommendation of the output power control
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AN-900-026-A
RA45H7687M1
RA45H7687M1,
RA45H7687M1
806MHz
20dBm
341V
22an
VGG13
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RA45H7687M1
Abstract: No abstract text available
Text: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-900-026-B Date : 21st Feb. 2007 Rev.date : 30th Jun. 2010 Prepared : K. Mori Confirmed : S. Kametani Taking charge of Silicon RF by Miyoshi Electronics SUBJECT: Recommendation of the output power control
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AN-900-026-B
RA45H7687M1
RA45H7687M1,
RA45H7687M1
20dBm
806MHz
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