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    RA35H1516M Search Results

    RA35H1516M Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    RA35H1516M Mitsubishi RoHS Compliance , 154-162MHz 40W 12.5V, 2 Stage Amp. For MOBILE RADIO Original PDF
    RA35H1516M Mitsubishi 154-162MHz 40W 12.5V MOBILE RADIO Original PDF
    RA35H1516M-01 Mitsubishi 154 - 162 MHz 40 W 12.5 V, 2 Stage Amp. for Mobile Radio Original PDF
    RA35H1516M-01 Mitsubishi 154-162MHz 40W 12.5V MOBILE RADIO Original PDF
    RA35H1516M-101 Mitsubishi RoHS Compliance , 154-162MHz 40W 12.5V, 2 Stage Amp. For MOBILE RADIO Original PDF
    RA35H1516M-E01 Mitsubishi 154-162MHz 40W 12.5V MOBILE RADIO Original PDF

    RA35H1516M Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    RA35H1516M

    Abstract: RA35H1516M-101
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA35H1516M RoHS Compliance , 154-162MHz 40W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA35H1516M is a 40-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 154- to


    Original     		PDF RA35H1516M 154-162MHz RA35H1516M 40-watt 162-MHz RA35H1516M-101

    amp circuit diagrams 400w

    Abstract: No abstract text available
    Text: <Silicon RF Power Modules > RA35H1516M RoHS Compliance , 154-162MHz 40W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA35H1516M is a 40-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 154- to 162-MHz range. The battery can be connected directly to the drain of the


    Original     		PDF RA35H1516M 154-162MHz RA35H1516M 40-watt 162-MHz amp circuit diagrams 400w

    RA35H1516M

    Abstract: RA35H1516M-101
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA35H1516M RoHS Compliance , 154-162MHz 40W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA35H1516M is a 40-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 154- to


    Original     		PDF RA35H1516M 154-162MHz RA35H1516M 40-watt 162-MHz RA35H1516M-101

    RF MOSFET MODULE

    Abstract: RA35H1516M RA35H1516M-01
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA35H1516M 154-162MHz 40W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA35H1516M is a 40-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 154- to


    Original     		PDF RA35H1516M 154-162MHz RA35H1516M 40-watt 162-MHz RF MOSFET MODULE RA35H1516M-01

    RA35H1516M-101

    Abstract: RA35H1516M 40Wat amp circuit diagrams 400w RF amplifier 400W
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA35H1516M RoHS Compliance , 154-162MHz 40W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA35H1516M is a 40-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 154- to


    Original     		PDF RA35H1516M 154-162MHz RA35H1516M 40-watt 162-MHz RA35H1516M-101 40Wat amp circuit diagrams 400w RF amplifier 400W

    RA35H1516M

    Abstract: RA35H1516M-01 RA35H1516M-E01 162MHz
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA35H1516M 154-162MHz 40W 12.5V MOBILE RADIO DESCRIPTION The RA35H1516M is a 40-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 154- to


    Original     		PDF RA35H1516M 154-162MHz RA35H1516M 40-watt 162-MHz RA35H1516M-01 RA35H1516M-E01 162MHz

    Untitled

    Abstract: No abstract text available
    Text: <Silicon RF Power Modules > RA35H1516M RoHS Compliance , 154-162MHz 40W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA35H1516M is a 40-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 154- to 162-MHz range. The battery can be connected directly to the drain of the


    Original     		PDF RA35H1516M 154-162MHz RA35H1516M 40-watt 162-MHz

    RA60H1317M1

    Abstract: RA30H1317M RA35H1516M RA07H4047M RA03M8087M RA07H3340M RA07H4452M RA13H1317M RA13H3340M RA13H4047M
    Text: APPLICATION NOTE Silicon RF Power Semiconductors Document No. AN-GEN-026-H Date : 18th Apr. 2003 Rev. date : 22th.Jun. 2010 Prepared : S.Kametani, Y.Tanaka Confirmed : T. Okawa Taking Charge of Silicon RF by Miyoshi Electronics SUBJECT: ELECTRO STATIC SENSITIVITY FOR


    Original     		PDF AN-GEN-026-H RA30H4452M 440-520MHz, 200pF, RA60H1317M1 RA30H1317M RA35H1516M RA07H4047M RA03M8087M RA07H3340M RA07H4452M RA13H1317M RA13H3340M RA13H4047M

    RD100HHF1

    Abstract: RD70HVF1 rd16hhf1 RD15HVF1 RD06HVF1 RD16HHF1 application notes RD70HVF RD70HHF1 RD01MUS2 RD06HHF1
    Text: SiRF Device Family for RF Power Amplification General Catalog Better Performance For Radio Communication Network Professional Mobile Radio Marine Radio Telematics AMPS/GSM Features Full Line up Frequency : 30-900MHz Output Power : 0.3-100W Operation Voltage : 7.2-12.5V


    Original     		PDF 30-900MHz H-CR624-E KI-0612 RD100HHF1 RD70HVF1 rd16hhf1 RD15HVF1 RD06HVF1 RD16HHF1 application notes RD70HVF RD70HHF1 RD01MUS2 RD06HHF1

    RA60H1317M1

    Abstract: C100pF 4500 MOS RA13H3340M mitsubishi rf power module RA30H1317M RA07H4047M RA35H1516M RA07H3340M RA07H4452M
    Text: APPLICATION NOTE RF POWER SEMICONDUCTORS Document No. AN-GEN-026-G Date : 18th Apr. 2003 Rev. date : 7th Jan. 2010 Prepared : S.Kametani, Y.Tanaka Confirmed : T. Okawa Taking Charge of Silicon RF by Miyoshi Electronics SUBJECT: ELECTRO STATIC SENSITIVITY FOR


    Original     		PDF AN-GEN-026-G RA30H4452M 440-520MHz, 200pF, RA60H1317M1 C100pF 4500 MOS RA13H3340M mitsubishi rf power module RA30H1317M RA07H4047M RA35H1516M RA07H3340M RA07H4452M

    RM15TB-H

    Abstract: RM10TB-H RA45H8087M rd00hhf1 rm30tn-h RM10TB RM250HB-10F ps11023-a PS11023 mitsubishi PS11023-A
    Text: MITSUBISHI СИЛОВЫЕ ПРИБОРЫ Применение: — силовые приводы электродвигателей постоянного и переменного тока; — преобразователи электроэнергии и электрогенераторы;


    Original     		PDF CM400HA CM600HA CM600HB CM100DY CM150DY CM200DY CM300DY CM400DY CM600DY RM15TB-H RM10TB-H RA45H8087M rd00hhf1 rm30tn-h RM10TB RM250HB-10F ps11023-a PS11023 mitsubishi PS11023-A

    RA60H1317M1

    Abstract: FET 4900 mitsubishi rf "RF Power Modules" 175mhz 12.5v 40w RA30H1317M RA13H1317M RA03M8087M RA30H4452M RA35H1516M
    Text: MITSUBISHI RF POWER SEMICONDUCTORS APPLICATION NOTE Document NO. AN-GEN-026-E Date : 18th April 2003 Rev. date : 15th March ‘05 Prepared : K. Kajiwara Confirmed : T. Okawa SUBJECT: ELECTRO STATIC SENSITIVITY FOR MITSUBISHI RF POWER MODULE RA* series


    Original     		PDF AN-GEN-026-E AN-GEN-026-E RA30H4452M 440-520MHz, 200pF, RA60H1317M1 FET 4900 mitsubishi rf "RF Power Modules" 175mhz 12.5v 40w RA30H1317M RA13H1317M RA03M8087M RA30H4452M RA35H1516M

    RA35H1516M

    Abstract: No abstract text available
    Text: ATTENTION MITSUBISHI RF POWER MODULE O BSERVE PRECAUTIONS FOR HANDLING ELETROSTATIC SENSITIVE DEVICES RA35H1516M Silicon MOS FET Power Amplifier, 154-162MHz 35W MOBILE RADIO MAXIMUM RATINGS SYMBOL V dd V gg Pin Po Tc OP Tstg (Tc=25deg.C UNLESS OTHERWISE NOTED)


    OCR Scan     		PDF RA35H1516M 154-162MHz 25deg 50ohm 54-162MHz RA35H1516M