RA30H4452M Search Results

RA30H4452M Datasheets (6)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
RA30H4452M		Mitsubishi	RoHS Compliance , 440-520MHz 30W 12.5V MOBILE RADIO		Original	PDF
RA30H4452M		Mitsubishi	440-520MHz 30W 12.5V MOBILE RADIO		Original	PDF
RA30H4452M		Mitsubishi	Silicon MOS FET Power Amplifier, 440 - 520 MHz 30 W FM MOBILE RADIO		Scan	PDF
RA30H4452M-01		Mitsubishi	440-520MHz 30W 12.5V MOBILE RADIO		Original	PDF
RA30H4452M-101		Mitsubishi	RoHS Compliance , 440-520MHz 30W 12.5V MOBILE RADIO		Original	PDF
RA30H4452M-E01		Mitsubishi	440-520MHz 30W 12.5V MOBILE RADIO		Original	PDF

RA30H4452M Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
RA30H4452M Abstract: RA30H4452M-01 RA30H4452M-E01 Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H4452M 440-520MHz 30W 12.5V MOBILE RADIO DESCRIPTION The RA30H4452M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 440- to	Original	RA30H4452M 440-520MHz RA30H4452M 30-watt 520-MHz RA30H4452M-01 RA30H4452M-E01	PDF
Untitled Abstract: No abstract text available Text: <Silicon RF Power Modules > RA30H4452M RoHS Compliance , 440-520MHz 30W 12.5V MOBILE RADIO BLOCK DIAGRAM DESCRIPTION The RA30H4452M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 440- to 520-MHz range. The battery can be connected directly to the drain of the	Original	RA30H4452M 440-520MHz RA30H4452M 30-watt 520-MHz	PDF
300 watt mosfet amplifier Abstract: RA30H4452M RA30H4452M-101 Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H4452M RoHS Compliance , 440-520MHz 30W 12.5V MOBILE RADIO DESCRIPTION The RA30H4452M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 440- to	Original	RA30H4452M 440-520MHz RA30H4452M 30-watt 520-MHz 300 watt mosfet amplifier RA30H4452M-101	PDF
RA30H4452M Abstract: RA30H4452M-101 Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H4452M RoHS Compliance , 440-520MHz 30W 12.5V MOBILE RADIO DESCRIPTION The RA30H4452M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 440- to	Original	RA30H4452M 440-520MHz RA30H4452M 30-watt 520-MHz RA30H4452M-101	PDF
RA30H4452M Abstract: RA30H4452M-101 Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H4452M RoHS Compliance , 440-520MHz 30W 12.5V MOBILE RADIO DESCRIPTION The RA30H4452M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 440- to	Original	RA30H4452M 440-520MHz RA30H4452M 30-watt 520-MHz RA30H4452M-101	PDF
Untitled Abstract: No abstract text available Text: <Silicon RF Power Modules > RA30H4452M RoHS Compliance , 440-520MHz 30W 12.5V MOBILE RADIO BLOCK DIAGRAM DESCRIPTION The RA30H4452M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 440- to 520-MHz range. The battery can be connected directly to the drain of the	Original	RA30H4452M RA30H4452M 30-watt 520-MHz	PDF
F480M Abstract: rf mosfet power amplifier Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H4452M RoHS Compliance , 440-520MHz 30W 12.5V MOBILE RADIO DESCRIPTION The RA30H4452M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 440- to	Original	RA30H4452M 440-520MHz RA30H4452M 30-watt 520-MHz F480M rf mosfet power amplifier	PDF
RA60H1317M1 Abstract: RA30H1317M RA35H1516M RA07H4047M RA03M8087M RA07H3340M RA07H4452M RA13H1317M RA13H3340M RA13H4047M Text: APPLICATION NOTE Silicon RF Power Semiconductors Document No. AN-GEN-026-H Date : 18th Apr. 2003 Rev. date : 22th.Jun. 2010 Prepared : S.Kametani, Y.Tanaka Confirmed : T. Okawa Taking Charge of Silicon RF by Miyoshi Electronics SUBJECT: ELECTRO STATIC SENSITIVITY FOR	Original	AN-GEN-026-H RA30H4452M 440-520MHz, 200pF, RA60H1317M1 RA30H1317M RA35H1516M RA07H4047M RA03M8087M RA07H3340M RA07H4452M RA13H1317M RA13H3340M RA13H4047M	PDF
RD100HHF1 Abstract: RD70HVF1 rd16hhf1 RD15HVF1 RD06HVF1 RD16HHF1 application notes RD70HVF RD70HHF1 RD01MUS2 RD06HHF1 Text: SiRF Device Family for RF Power Amplification General Catalog Better Performance For Radio Communication Network Professional Mobile Radio Marine Radio Telematics AMPS/GSM Features Full Line up Frequency : 30-900MHz Output Power : 0.3-100W Operation Voltage : 7.2-12.5V	Original	30-900MHz H-CR624-E KI-0612 RD100HHF1 RD70HVF1 rd16hhf1 RD15HVF1 RD06HVF1 RD16HHF1 application notes RD70HVF RD70HHF1 RD01MUS2 RD06HHF1	PDF
RA60H1317M1 Abstract: C100pF 4500 MOS RA13H3340M mitsubishi rf power module RA30H1317M RA07H4047M RA35H1516M RA07H3340M RA07H4452M Text: APPLICATION NOTE RF POWER SEMICONDUCTORS Document No. AN-GEN-026-G Date : 18th Apr. 2003 Rev. date : 7th Jan. 2010 Prepared : S.Kametani, Y.Tanaka Confirmed : T. Okawa Taking Charge of Silicon RF by Miyoshi Electronics SUBJECT: ELECTRO STATIC SENSITIVITY FOR	Original	AN-GEN-026-G RA30H4452M 440-520MHz, 200pF, RA60H1317M1 C100pF 4500 MOS RA13H3340M mitsubishi rf power module RA30H1317M RA07H4047M RA35H1516M RA07H3340M RA07H4452M	PDF
RM15TB-H Abstract: RM10TB-H RA45H8087M rd00hhf1 rm30tn-h RM10TB RM250HB-10F ps11023-a PS11023 mitsubishi PS11023-A Text: MITSUBISHI СИЛОВЫЕ ПРИБОРЫ Применение: — силовые приводы электродвигателей постоянного и переменного тока; — преобразователи электроэнергии и электрогенераторы;	Original	CM400HA CM600HA CM600HB CM100DY CM150DY CM200DY CM300DY CM400DY CM600DY RM15TB-H RM10TB-H RA45H8087M rd00hhf1 rm30tn-h RM10TB RM250HB-10F ps11023-a PS11023 mitsubishi PS11023-A	PDF
walkie-talkie Abstract: sirf 4 mitsubishi rf sirf sirf 3 reliability RA30H4452M MITSUBISHI example Text: MITSUBISHI RF POWER SEMICONDUCTORS APPLICATION NOTE Document NO. AN-GEN-030-B Date : 16th June. 2003 Prepared : T.Kajo,T.Ohkawa Confirmed : Issue B: H.Nakao ht 27 Oct. 2003 T.Ohkawa SUBJECT: Reliability concept for SiRF Products Conclusion: products. This application note shows the reliability concept and reliability level for SiRF	Original	AN-GEN-030-B AN-GEN030 490MHz walkie-talkie sirf 4 mitsubishi rf sirf sirf 3 reliability RA30H4452M MITSUBISHI example	PDF
RA60H1317M1 Abstract: FET 4900 mitsubishi rf "RF Power Modules" 175mhz 12.5v 40w RA30H1317M RA13H1317M RA03M8087M RA30H4452M RA35H1516M Text: MITSUBISHI RF POWER SEMICONDUCTORS APPLICATION NOTE Document NO. AN-GEN-026-E Date : 18th April 2003 Rev. date : 15th March ‘05 Prepared : K. Kajiwara Confirmed : T. Okawa SUBJECT: ELECTRO STATIC SENSITIVITY FOR MITSUBISHI RF POWER MODULE RA* series	Original	AN-GEN-026-E AN-GEN-026-E RA30H4452M 440-520MHz, 200pF, RA60H1317M1 FET 4900 mitsubishi rf "RF Power Modules" 175mhz 12.5v 40w RA30H1317M RA13H1317M RA03M8087M RA30H4452M RA35H1516M	PDF
f480-1 Abstract: RA30H4452M mos 4801 Text: ATTENTION MITSUBISHI RF POWER MODULE OBSERVE PRECAUTIONS FOR HANDLING ELETROSTATIC SENSITIVE DEVICES RA30H4452M Silicon MOS FET Power Amplifier, 440-520MHz 30W FM MOBILE RADIO O U TLIN E DRAW ING Dimensions in mm 66.0 +/-0.5 60.0 +/-0.5 2.3 +/-Ö.3 MAXIMUM RATINGS	OCR Scan	RA30H4452M 440-520MHz 25deg 50ohm ZI-50ohm f480-1 RA30H4452M mos 4801	PDF