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    R8 2K Search Results

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    R8 2K Price and Stock

    Bourns Inc CV201210-R82K

    FIXED IND 820NH 150MA 1 OHM SMD
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    DigiKey CV201210-R82K Reel 10,000 2,000
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    Avnet Americas CV201210-R82K Reel 12 Weeks 12,000
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    Avnet Abacus CV201210-R82K Reel 15 Weeks 12,000
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    Master Electronics CV201210-R82K
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    TDK Corporation MLF1608DR82KTA00

    FIXED IND 820NH 70MA 1.4 OHM SMD
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    DigiKey MLF1608DR82KTA00 Reel 4,000 4,000
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    MLF1608DR82KTA00 Cut Tape 3,330 1
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    Bristol Electronics MLF1608DR82KTA00 3,283
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    TTI MLF1608DR82KTA00 Reel 4,000
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    Avnet Abacus MLF1608DR82KTA00 21 Weeks 4,000
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    Pulse Electronics Corporation BSCL00201209R82K00

    INDUCTOR RF
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    DigiKey BSCL00201209R82K00 Reel 4,000 4,000
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    Avnet Americas BSCL00201209R82K00 Reel 14 Weeks 8,000
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    Mouser Electronics BSCL00201209R82K00 3,850
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    Newark BSCL00201209R82K00 Reel 8,000
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    TTI BSCL00201209R82K00 Reel 8,000
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    Master Electronics BSCL00201209R82K00 8,000
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    Sager BSCL00201209R82K00 8,000
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    Sunlord SDFL1608LR82KTF

    FIXED IND 820NH 35MA 2.1 OHM SMD
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    DigiKey SDFL1608LR82KTF Cut Tape 3,830 1
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    Bourns Inc PM1008-R82K-RC

    FIXED IND 820NH 360MA 1.61OHM SM
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    DigiKey PM1008-R82K-RC Reel 2,000 2,000
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    PM1008-R82K-RC Cut Tape 1,918 1
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    Master Electronics PM1008-R82K-RC
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    Find more R8 2K price and stock on Findchips.com

    R8 2K Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    STM8L151

    Abstract: STM8L152R6 STM8L151C8 STM8L Reference Manual USART3 LCD 8x40 lcd 5421 pm0044 STM32L STM8L152R8
    Text: STM8L151M8/R8/C8 STM8L151R6 STM8L152M8/R8/C8 STM8L152R6 8-bit ultralow power MCU, up to 64 KB Flash, up to 2KB data EEPROM RTC, LCD, timers, USARTs, I2C, SPIs, ADC, DAC, comparators Preliminary data Features • ■ ■ Operating conditions – Operating power supply: 1.65 to 3.6 V


    Original     		PDF STM8L151M8/R8/C8 STM8L151R6 STM8L152M8/R8/C8 STM8L152R6 STM8L151 STM8L152R6 STM8L151C8 STM8L Reference Manual USART3 LCD 8x40 lcd 5421 pm0044 STM32L STM8L152R8

    Untitled

    Abstract: No abstract text available
    Text: KOA SPEER ELECTRONICS, INC. TN-196 R8 AHA 8/03/04 Ceramic Chip Capacitors Type NPO, X5R, X7R, Y5V, Z5U CERTIFIED 1. General 1-1 Range of Application This document applies to miniaturized ceramic chip capacitors for applications in circuits of electronic devices.


    Original     		PDF TN-196

    Untitled

    Abstract: No abstract text available
    Text: KOA SPEER ELECTRONICS, INC. SS-223 R8 AHA 8/05/05 Multi Layer Ferrite Inductors Type MCL CERTIFIED CERTIFIED 1. General • Monolithic structure for closed magnetic path eliminates crosstalk and provides high reliability in a wide range of temperature and humidity ranges


    Original     		PDF SS-223 MCL0805:

    12Mhz crystal oscillator

    Abstract: SHOGYO 3.5mm headphone jack 1mh inductor Shogyo SJS-0354-5P JP15 3.5mm stereo headphone jack SJS-0354-5P JP13 C18-C20 12mhz crystal
    Text: Bill of Materials for LM4931-ITL Demo Board 11/5/2003 Assembly Notes: - No special considerations. Symbol Value Tolerance Type/Description R1, R4 2kΩ 2% 1/10 Watt, Size code: 0805 R2, R3, R6, R8, R99 100kΩ 2% 1/10 Watt, Size code: 0805 R5, R7 5kΩ 2%


    Original     		PDF LM4931-ITL 100pF DN3296CTND SJS-0354-5P 12MHz SE1709-ND 12Mhz crystal oscillator SHOGYO 3.5mm headphone jack 1mh inductor Shogyo SJS-0354-5P JP15 3.5mm stereo headphone jack SJS-0354-5P JP13 C18-C20 12mhz crystal

    diode 1N4001 voltage limitations

    Abstract: lead gel battery 007C 1N4001 LM393N TN0604N3 TN2504N8 AN-D09 INTRINSIC SAFE CIRCUIT AA battery R6
    Text: AN-D09 Application Note Battery Back-Up Utilizing Low Threshold MOSFETs Introduction by R8 and the intrinsic drain to source diode of Q2. For fully discharged batteries, there will be a high charge current for a few seconds, rapidly decaying to a slow charge.


    Original     		PDF AN-D09 diode 1N4001 voltage limitations lead gel battery 007C 1N4001 LM393N TN0604N3 TN2504N8 AN-D09 INTRINSIC SAFE CIRCUIT AA battery R6

    HFA3046

    Abstract: 74HCT193 HFA1145 74HCT00 74HCT123 74HCT32 HA4600 HA5020 transistor 9740
    Text: TM Digital Control Selects The Number of Analog Cycles and Burst Frequency Application Note July 1997 AN9740 Authors: Alan Erzinger and Ron Mancini Introduction comparator. R6, R7, and R8 bias the long tailed transistor at 10mA which is the optimum point for speed. R5 and R6 are


    Original     		PDF AN9740 HA4600 480MHz) HA5020 HFA1145 HA4600. HFA3046 74HCT193 HFA1145 74HCT00 74HCT123 74HCT32 transistor 9740

    "lead acid" battery monitor

    Abstract: lead gel battery BATTERY AA discharge test blown fuse indicator
    Text: TN06 Series Application Note AN–D9 Battery Back-Up Utilizes Low Threshold MOSFETs Introduction The simple battery backup circuit shown in Figure 1 utilizes Supertex low threshold DMOS devices to achieve excellent efficiency. cells in series, is being charged with a current set by R8 and the


    Original     		PDF

    INTRINSIC SAFE CIRCUIT

    Abstract: lead gel battery 007C 1N4001 LM393N TN0604N3 TN2504N8
    Text: TN06 Series Application Note AN–D9 Battery Back-Up Utilizes Low Threshold MOSFETs Introduction The simple battery backup circuit shown in Figure 1 utilizes Supertex low threshold DMOS devices to achieve excellent efficiency. cells in series, is being charged with a current set by R8 and the


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: SCHEMATICS mikromedia for PIC24 We present you with a complete color schematics for mikromedia™ for PIC24® development board. We want you to know what your board is consisted of and how it actually works. E9 VCC-SYS R8 10K HDR1 RD7 RD6 PMRD PMWR RD13


    Original     		PDF PIC24Â 100nF 0283QT- 320x240

    TN0602N3

    Abstract: TN2504N8 BATTERY CHARGE DISCHARGE INDICATOR CIRCUIT rechargeable battery charging efficiency 007C 1N4001 LM393N 500mAH LM393N battery "lead acid"
    Text: TN06 Series Application Note AN–D9 Battery Back-Up Utilizes Low Threshold MOSFETs Introduction cells in series, is being charged with a current set by R8 and the intrinsic drain to source diode of Q2. For fully discharged batteries, there will be a high charge current for a few seconds, rapidly


    Original     		PDF TN2504N8) TN0602N3) TN0602N3 TN2504N8 BATTERY CHARGE DISCHARGE INDICATOR CIRCUIT rechargeable battery charging efficiency 007C 1N4001 LM393N 500mAH LM393N battery "lead acid"

    ceramic capacitor 22nF through hole

    Abstract: IR R8 MOSFET 560Uf 1500uF sanyo cap 16MV1500WG BAT54H VJ0805Y104KXXA
    Text: National Semiconductor Corp. Designator C1 C2 C3 C4 C5 C6 C7 C8 C9 C10 C11 C12 D1 L1 P1 P2 P3 P4 P5 Q1 Q2 R1 R2 R3 R4 R5 R6 R7 R8 U1 Stratix Vccint Vcore Reference Design Part Type Manufacturer Part No 0.1uF VISHAY VJ0805Y104KXXA 2.2uF TDK C2012X5R0J225


    Original     		PDF VJ0805Y104KXXA C2012X5R0J225 VJ0805Y103KXXA VJ0805Y223KXXA 1500uF 16MV1500WG VJ0805Y272KXXA 560uF ceramic capacitor 22nF through hole IR R8 MOSFET 560Uf 1500uF sanyo cap 16MV1500WG BAT54H VJ0805Y104KXXA

    op627

    Abstract: .47uf 2C266 ad840 pn4250 opa27gp
    Text: 2.94K R1 +14V R4 .47uF 1 1K 33uF C2 Q1 2K C3 +15_FE Q2 1uF AD840J Q_AMP_OUT 2A 2B 10 2C Y 6A 100 D1 33uF + 100 1N758A C7 R8 + V- 3 + 33uF .47uF 100 -15_FE - 2 2.2m 1uF_P 8 T2 Y 6 T1 OP627GP U2 R11 7A 7B .47uF -15_FE 6C 7C .47uF C11 4 6 1uF 6B R13 2.8K C12


    Original     		PDF PN4250 MPSA18 AD840J 1N758A OP627GP -15FE OPA27GP REF102 op627 .47uf 2C266 ad840 opa27gp

    TN0602N3

    Abstract: BATTERY CHARGE DISCHARGE INDICATOR CIRCUIT diode 1N4001 voltage limitations 1n4001 family INTRINSIC SAFE CIRCUIT 2k resistor 2 watt datasheet 6.8V lead gel battery 007C 1N4001
    Text: TN06 Series Application Note AN–D9 3 Battery Back-Up Utilizes Low Threshold MOSFETs Introduction cells in series, is being charged with a current set by R8 and the intrinsic drain to source diode of Q2. For fully discharged batteries, there will be a high charge current for a few seconds, rapidly


    Original     		PDF TN2504N8) TN0602N3) TN0602N3 BATTERY CHARGE DISCHARGE INDICATOR CIRCUIT diode 1N4001 voltage limitations 1n4001 family INTRINSIC SAFE CIRCUIT 2k resistor 2 watt datasheet 6.8V lead gel battery 007C 1N4001

    sc979-03

    Abstract: rca jacks footprint SC97903 sc979 capacitor 10uf 16v radial EXCCL3225U audio jack 3.5mm surface mounted SigmaTel stac9752 3.5mm jack circuit diagram Sigmatel STAC9753
    Text: 5 4 3 STAC9752_53_MB - Main Board Audio Reference Design. 2 1 REVISION HISTORY: 1 7/08/01 - Original release. 2) 7/15/01 - Increased R8/R9 to 220K for analog jack sense. D D B LINE In C TAD PNONE MONO Out Analog In AC Link Power Conditioning: +5V AVDD +3.3V DVDD


    Original     		PDF STAC9752 STAC9752 STAC9753 STAC9752/53 48-TQFP, MA-306 MA-306/CA-301 ZR78L05 OT-223. 576MHz sc979-03 rca jacks footprint SC97903 sc979 capacitor 10uf 16v radial EXCCL3225U audio jack 3.5mm surface mounted SigmaTel stac9752 3.5mm jack circuit diagram Sigmatel STAC9753

    Untitled

    Abstract: No abstract text available
    Text: TS1003 Op Amp Demo Board FEATURES     0.8V to 5.5V Single-supply operation AC-coupled Inverting configuration supplied Fully Assembled and Tested 2mm x 2mm 2-layer demo board COMPONENT LIST DESIGNATION QTY C6 1 R7 1 R6, R10 2 R8, R9 2 U1 1 VDD ,Vin ,Vout ,GND


    Original     		PDF TS1003 TS1003 TS1003. TS1003DB

    ceramic capacitor 0.01uf

    Abstract: VJ0805Y103KXXA caps 820uf ceramic capacitor vishay CRCW08051331F 0.1uF Capacitor Ceramic ceramic capacitor, .01uF ceramic capacitor, .10nf CRCW08051000F BAT54H
    Text: National Semiconductor Corp. Designator C1 C2 C3 C4 C5 C6 C7 C8 C9 C10 D1 L1 P1 P2 P3 P4 Q1 Q2 R1 R2 R3 R4 R5 R6 R7 R8 U1 Part Type 0.1uF 2.2uF 0.01uF 10nF 820uF 2.7nF 560uF 560uF 100pF 15nF BAT54H DO3316P-222 Vin 3.3V 1.5V@4A Gnd Gnd SI4838DY SI4838DY 10R


    Original     		PDF 820uF 560uF 100pF BAT54H DO3316P-222 SI4838DY LM2743 VJ0805Y104KXXA ceramic capacitor 0.01uf VJ0805Y103KXXA caps 820uf ceramic capacitor vishay CRCW08051331F 0.1uF Capacitor Ceramic ceramic capacitor, .01uF ceramic capacitor, .10nf CRCW08051000F BAT54H

    ceramic capacitor 0.01uf

    Abstract: ceramic capacitor vishay ceramic capacitor, .1uF CRCW08051000F 15nf capacitor 10nf 6MB820EXR BAT54H DO3316P-222 LM2743
    Text: National Semiconductor Corp. Designator C1 C2 C3 C4 C5 C6 C7 C8 C9 C10 D1 L1 P1 P2 P3 P4 Q1 Q2 R1 R2 R3 R4 R5 R6 R7 R8 U1 Part Type 0.1uF 2.2uF 0.01uF 10nF 820uF 2.7nF 560uF 560uF 100pF 15nF BAT54H DO3316P-222 Vin 3.3V 1.5V@4A Gnd Gnd SI4838DY SI4838DY 10R


    Original     		PDF 820uF 560uF 100pF BAT54H DO3316P-222 SI4838DY LM2743 VJ0805Y104KXXA ceramic capacitor 0.01uf ceramic capacitor vishay ceramic capacitor, .1uF CRCW08051000F 15nf capacitor 10nf 6MB820EXR BAT54H DO3316P-222 LM2743

    DA12 16

    Abstract: SK1N1 T1-1TCUP RX433 n1 sot23 SDA04HOSK RC0603 Hp TX2 SOT23 2A8 SOT23-BEC
    Text: 4 3 1 2 REVISIONS JP9 DVDD JP15 RXEN_SYNC JP14 D REV DESCRIPTION DATE APPROVED B Customer Version NO Socket 0307.09 JRM D JP58 AWG_RXTXEN 1 TX0 2 RX5 3 RX4 4 RX3 1 DVDD RX2 2 AWG_TXSYNC RX1 3 DSP_RXTXEN RX0 4 10K R16 RC0603 10K R8 RC0603 R9 33 RC0603 JP1 JP2


    Original     		PDF RC0603 NC7SZ125M5 DA12 16 SK1N1 T1-1TCUP RX433 n1 sot23 SDA04HOSK RC0603 Hp TX2 SOT23 2A8 SOT23-BEC

    ceramic capacitor vishay

    Abstract: FILM CAP 6MB820EXR BAT54H DO3316P-222 EP2S15 LM2743 SI4838DY VJ0805Y104KXXA DO3316P-222 B
    Text: National Semiconductor Corp. Designator C1 C2 C3 C4 C5 C6 C7 C8 C9 C10 D1 L1 P1 P2 P3 P4 Q1 Q2 R1 R2 R3 R4 R5 R6 R7 R8 U1 Part Type 0.1uF 2.2uF 0.01uF 10nF 820uF 2.7nF 560uF 560uF 100pF 15nF BAT54H DO3316P-222 Vin 3.3V 1.2V@4A Gnd Gnd SI4838DY SI4838DY 10R


    Original     		PDF 820uF 560uF 100pF BAT54H DO3316P-222 SI4838DY LM2743 EP2S15 ceramic capacitor vishay FILM CAP 6MB820EXR BAT54H DO3316P-222 LM2743 SI4838DY VJ0805Y104KXXA DO3316P-222 B

    j1 3003

    Abstract: R1075 APR3003 XFATM2X-CLxu1-4S
    Text: S ch e m a tic : 8 o- 1CT: 1CT RJ45 7 o- J8 J7 J6 6 o- RX 1CT:1CT J5 J4 5 o4 o- J!'nnrL 3 o- TX 2H 9 o- 10 o- 11 o- J3 J2 J1 Shld Left LED •R10 *R9 > S R8 > R7 Right LED 12 o- XFATM2X COMBO w/ LED's 9 1 1000pF E le c tr ic a l ^ 2KV R7,R8,R9,R10: 75 OHMS


    OCR Scan     		PDF 1000pF 350uH 3-100MHz) 30MHz -20dB 80MHz 100MHz) -30dB Hz-100MHz) j1 3003 R1075 APR3003 XFATM2X-CLxu1-4S

    Untitled

    Abstract: No abstract text available
    Text: S ch e m atic: 8 o- 1CT: 1CT R J45 7 o- 6 o- J8 J7 J6 RX 1CT: 1CT 5 o- J5 J4 ft 4 o- J3 J2 J1 I g iO T V ' ^ 3 o- — TX Shld •R10 XFATMZX COMBO i R9 i R8 > R7 1OOQpF R7.R8.R9.R10: 75 OHMS 2KV 7 E lectrical S p e c i f i c a t i o n s : @25 C UTP Impedance: 100 OHMS


    OCR Scan     		PDF 350uH 10OrnV 3-100MHz) 30MHz -20dB 80MHz 03-100MHz) -30dB Hz-100MHz)

    Untitled

    Abstract: No abstract text available
    Text: S ch e m atic: 8 o- 1CT: 1CT R J45 7 o- J8 J7 6 o- J6 J5 J4 RX 1CT: 1CT 5 o- ft J3 4 o- J2 J1 I g iO T V ' 3 o- ^ — TX Shld •R10 XFATMZX COMBO i R9 i R8 > R7 1OOQpF 2KV R7.R8.R9.R10: 75 OHMS 7 E lectrical S p e c i f i c a t i o n s : @25 C UTP Impedance: 100 OHMS


    OCR Scan     		PDF 350uH 10OrnV 3-100MHz) 30MHz -20dB 80MHz 03-100MHz) -30dB Hz-100MHz)

    R10-75

    Abstract: R1075
    Text: S c h em a tic: 8 o- 1 CT: 1CT RJ45 7 o- J8 J7 J6 J5 J4 J3 J2 J1 6 o- RX 1 CT: 1 CT 5 o- 4 o3 o- TX Shld 2 o—! R8 > R7 •R10 > R9 XFATM2X COMBO 9 1 lOOOpF 2KV R7,R8,R9,R10: 75 OHMS /7 7 E lec trica l S p e c i f ic a t io n s : 25°C UTP Im pedance: 100 OHMS


    OCR Scan     		PDF 350uH 100KHz 3-100MHz) 30MHz -20dB 80MHz 100MHz) -30dB Hz-100MHz) R10-75 R1075

    IDT7M135

    Abstract: No abstract text available
    Text: 8K x 8 16K x 8 CMOS CMOS DUAL-PORT STATIC RAM MODULE MASTER FEATURES: • • ■ • • • • • • • • High-density 64K/128K CMOS Dual-Port RAM modules 16K x 8 (IDT7M135) o r8 K x 8 (IDT7M134)option Fully asynchronous read/write operation from either port


    OCR Scan     		PDF 64K/128K IDT7M135) IDT7M134 IDT7M134S IDT7M135S IDT7M134/IDT7M135 IDT7132 LL10R RL10L IDT7M135