R6S DIODE
Abstract: smb marking stmicroelectronics STTH3R06 AN1471 JESD97 STTH3R06RL STTH3R06-RL STTH3R06S STTH3R06U st 3R6U
Text: STTH3R06 TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER Table 1: Main Product Characteristics IF AV 3A VRRM 600 V IR (max) 100 µA Tj 175°C VF (typ) 1.0 V trr (typ) 35 ns A FEATURES AND BENEFITS • ■ ■ ■ K DO-201AD STTH3R06 Ultrafast switching Low forward voltage drop
|
Original
|
STTH3R06
DO-201AD
STTH3R06,
STTH3R06U
STTH3R06S
STTH3R06RL
R6S DIODE
smb marking stmicroelectronics
STTH3R06
AN1471
JESD97
STTH3R06RL
STTH3R06-RL
STTH3R06S
STTH3R06U
st 3R6U
|
PDF
|
R6S DIODE
Abstract: STTH3R06 STTH3R06U 17 SMC st r6s diode AN1471 STTH3R06RL STTH3R06-RL STTH3R06S R06U
Text: STTH3R06 TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER Table 1: Main Product Characteristics IF AV 3A VRRM 600 V IR (max) 100 µA Tj 175°C VF (typ) 1.0 V trr (typ) 35 ns A FEATURES AND BENEFITS • ■ ■ ■ K DO-201AD STTH3R06 Ultrafast switching Low forward voltage drop
|
Original
|
STTH3R06
DO-201AD
STTH3R06,
STTH3R06U
STTH3R06S
STTH3R06RL
R6S DIODE
STTH3R06
STTH3R06U
17 SMC
st r6s diode
AN1471
STTH3R06RL
STTH3R06-RL
STTH3R06S
R06U
|
PDF
|
Untitled
Abstract: No abstract text available
Text: STTH3R06 TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER Table 1: Main Product Characteristics IF AV 3A VRRM 600 V IR (max) 100 µA Tj 175°C VF (typ) 1.0 V trr (typ) 35 ns A FEATURES AND BENEFITS • ■ ■ ■ K DO-201AD STTH3R06 Ultrafast switching Low forward voltage drop
|
Original
|
STTH3R06
DO-201AD
STTH3R06,
STTH3R06U
STTH3R06S
STTH3R06RL
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BFP760 Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.0, 2012-12-04 RF & Protection Devices Edition 2012-12-04 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer
|
Original
|
BFP760
thi-04
OT343
OT343-PO
OT343-FP
BFP760:
OT323-TP
|
PDF
|
DARLINGTON TRANSISTOR ARRAY
Abstract: No abstract text available
Text: EVERLIGHT. THE SOURCE OF LIGHT. EVERLIGHT illuminates the way for many of the world’s brightest companies. Acclaimed as a premiere global solution provider in the opto-semiconductor industry and held in high regard as a reliable partner for many of the world’s leading electronics companies,
|
Original
|
|
PDF
|
6 Pin LED PIRANHA
Abstract: everlight 50-215 smd transistor 2T EHP-A09K-BRTT-5670HEAFAD9K-1T8-AM PLR262 19-237A/R6GHBHC-B01/2T IRM-3638M-X
Text: CATALOGUE 2014-2015 OPTOELECTRONIC COMPONENTS www.everlight.com EVERLIGHT THE SOURCE OF LIGHT EVERLIGHT illuminates the way for many of the world’s brightest companies. Acclaimed as a premiere global solution provider in the opto-semiconductor industry and held in high regard as a reliable
|
Original
|
D-85737
SE-573
6 Pin LED PIRANHA
everlight 50-215
smd transistor 2T
EHP-A09K-BRTT-5670HEAFAD9K-1T8-AM
PLR262
19-237A/R6GHBHC-B01/2T
IRM-3638M-X
|
PDF
|
FLUKE 115-N10140 SERIAL NUMBER
Abstract: No abstract text available
Text: 287/289 True-rms Digital Multimeters Users Manual June 2007, Rev. 1, 7/08 2007, 2008 Fluke Corporation. All rights reserved. Specifications subject to change without notice. All product names are trademarks of their respective companies. Lifetime Limited Warranty
|
Original
|
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SCRs ID200-ID203 ID300-ID301 1.6 Amp, Planar FEATU RES DESCRIPTION • • • • This Data Sheet describes Microsemi's line of hermetically sealed industrial SCRs designed for high-voltage, medium-current control applications. The Series is packaged in a TO-39 metal case with Microsemi's unique oxide passivated junctions to ensure
|
OCR Scan
|
ID200-ID203
ID300-ID301
ID201
ID200
|
PDF
|
2100-CC
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FK7SM-12 HIGH-SPEED SWITCHING USE FK7SM-12 OUTLINE DRAWING Dimensions in mm 4.5 15.9MAX. 1-5 <p 3.2 * 5.45 , 5.45 0.6 . 2.8 O .2 4 • TDS ON (MAX) •600V 1.63Q • I D . . • Integrated Fast Recovery Diode (MAX.) —
|
OCR Scan
|
FK7SM-12
150ns
2100-CC
|
PDF
|
NTE7089
Abstract: No abstract text available
Text: LINEAR INTEGRATED CIRCUITS NTE7073 Front View 9-Lead SIP, See Diag. 566 Hybrid Switching Regulator NTE7075 (Front View) 15-Lead SIP, See Diag. 486 Module, 100W Offline Switching Regulator for Color TV NTE7076 (Front View) 16-Lead SIP, See Diag. 591 Module, 100W Offline Switching Regulator
|
OCR Scan
|
NTE7073
NTE7075
15-Lead
NTE7076
16-Lead
NTE7077
NTE7089
|
PDF
|
R6S DIODE
Abstract: No abstract text available
Text: m HARRIS S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRM9130 D, R, H 2N7307D, 2N7307R 2N7307H Radiation Hardened P-Channel Power MOSFETs December 1992 Package Features • 6A,-100V, RDS(on) = 0.550U TO-2Q4AA • Second Generation Rad Hard MOSFET Result« From New Design Concepts
|
OCR Scan
|
FRM9130
2N7307D,
2N7307R
2N7307H
-100V,
100KRAD
300KRAD
1000KRAD
3000KRAD
35MeV/mg/cm2
R6S DIODE
|
PDF
|
R6S DIODE
Abstract: No abstract text available
Text: Product specification Philips Semiconductors TrenchMOS transistor Logic level FET SYMBOL FEATURES • • • • • • PHP44N06LT, PHB44N06LT QUICK REFERENCE DATA VnRS = 55 V ’Trench’ technology Very low on-state resistance Fast switching Stable off-state characteristics
|
OCR Scan
|
PHP44N06LT,
PHB44N06LT
PHP44N06LT
T0220AB)
R6S DIODE
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated PHX6N50E FEATURES • • • • • SYMBOL Repetitive Avalanche Rated Fast switching Stable off-state characteristics High thermal cycling performance Isolated package
|
OCR Scan
|
PHX6N50E
PHX6N50E
OT186A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MP8782 CM OS 10-Bit High Speed Analog-to-Digital Converter M Micro Power Systems FEATURES APPLICATIONS 10-Bit Resolution 5 MHz Sampling Rate DNL = ±1 LSB, INL = ±2 LSB Internal S/H Function Single 5 V Power Supply V|n DC Range: 0 V to V qd V rep DC Range: 1 V to V qq
|
OCR Scan
|
MP8782
10-Bit
MP8782
application300
|
PDF
|
|
|
JY MCU
Abstract: IX0011 C68HC05X4 Nippon capacitors
Text: MC68HC05X4/D MC68HC05X4 MC68HC705X4 ADVANCE INFORMATION Ä M O T O R O LM MC68HC05X4 MC68HC705X4 High-density Complementary Metal Oxide Semiconductor (HCMOS) Microcomputer Unit This document contains information on a new product Specifications and information herein are subject to change without notice.
|
OCR Scan
|
MC68HC05X4/D
MC68HC05X4
MC68HC705X4
MC68HC705X4
JY MCU
IX0011
C68HC05X4
Nippon capacitors
|
PDF
|
SN7401
Abstract: SN7449 vogt IL 050 321 31 01 VOGT 406 69 74L95 SN74L00 TME 87 SN6407
Text: Series 64N and 64LN These devices have identical characteristics to Series 74N or Series 74LN respectively but are guaranteed over the temperature range of - 40° C to +85° C Refer to the appropriate 74 Series data sheet for parameters. G E N E R A L IN F O R M A T IO N A B O U T T T L IN T E G R A T E D C IR C U IT S
|
OCR Scan
|
54H/74H,
4L/74L.
Chiana56
SN7401
SN7449
vogt IL 050 321 31 01
VOGT 406 69
74L95
SN74L00
TME 87
SN6407
|
PDF
|
2M2222A
Abstract: pj 1349 fxp ERI - 35 - 2 YE 0515 TRANSFORMER 2m2222 cmps a42 transistor TTL 74LSxx dg 2n60 diode cross reference PJ32 fj series capacitor 3uF 600V STB523
Text: W tipt H E W L E T T mL'HM P AC KAR D HP 1000 M/E/F-Series Computers Engineering and Reference Documentation HEWLETT-PACKARD COMPANY Data Systems Division 11000 Wolfe Road Cupertino, California 95014 MANUAL PART NO. 92851-90001 Printed in U.S.A. March 1981
|
OCR Scan
|
2991A
2M2222A
pj 1349 fxp
ERI - 35 - 2 YE 0515 TRANSFORMER
2m2222
cmps a42 transistor
TTL 74LSxx
dg 2n60
diode cross reference PJ32
fj series capacitor 3uF 600V
STB523
|
PDF
|
