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    R6012FNX Price and Stock

    ROHM Semiconductor R6012FNX

    MOSFET N-CH 600V 12A TO220FM
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    Verical R6012FNX 90 49
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    Future Electronics R6012FNX Bulk 23 Weeks 500
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    CoreStaff Co Ltd R6012FNX 90
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    R6012FNX Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    R6012FNX ROHM FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 12A TO-220FM Original PDF

    R6012FNX Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: R6012FNX 10V Drive Nch MOSFET - R6012FNX Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.


    Original     		PDF R6012FNX O-220FM RdsOnVgs10000

    Untitled

    Abstract: No abstract text available
    Text: R6012FNX Data Sheet 10V Drive Nch MOSFET R6012FNX  Structure Silicon N-channel MOSFET  Dimensions Unit : mm TO-220FM φ3.2 10.0 4.5 8.0 2.5 15.0 Features 1) Fast reverse recovery time (trr) 12.0 2.8 14.0 2) Low on-resistance. 3) Fast switching speed.


    Original     		PDF R6012FNX O-220FM R6012FNX R1120A

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet 10V Drive Nch MOSFET R6012FNX  Structure Silicon N-channel MOSFET  Dimensions Unit : mm TO-220FM φ3.2 10.0 4.5 8.0 2.5 15.0 Features 1) Fast reverse recovery time (trr) 12.0 2.8 14.0 2) Low on-resistance. 3) Fast switching speed. 4) Gate-source voltage


    Original     		PDF R6012FNX O-220FM R6012FNX R1120A

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet 10V Drive Nch MOSFET R6012FNX  Structure Silicon N-channel MOSFET  Dimensions Unit : mm TO-220FM φ3.2 10.0 4.5 8.0 2.5 15.0 Features 1) Fast reverse recovery time (trr) 12.0 2.8 14.0 2) Low on-resistance. 3) Fast switching speed. 4) Gate-source voltage


    Original     		PDF R6012FNX O-220FM R6012FNX R1120A

    Untitled

    Abstract: No abstract text available
    Text: R6012FNX Nch 600V 12A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 0.51W ID 12A PD 50W TO-220FM (3) (1) (2) lFeatures lInner circuit 1) Fast reverse recovery time (trr). 2) Low on-resistance. (1) Gate (2) Drain (3) Source 3) Fast switching speed.


    Original     		PDF R6012FNX O-220FM R1102A