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    ROHM Semiconductor RR601BM4STL

    DIODE STANDARD 400V 6A TO252
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    DigiKey RR601BM4STL Digi-Reel 14,744
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    TME RR601BM4STL 1
    • 1 $0.8
    • 10 $0.533
    • 100 $0.38
    • 1000 $0.356
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    Abracon Corporation ABLS-24.000MHZ-D-R60-1-W-T

    CRYSTAL 24.0000MHZ 18PF SMD
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    DigiKey ABLS-24.000MHZ-D-R60-1-W-T Digi-Reel 5,740 1
    • 1 $0.25
    • 10 $0.217
    • 100 $0.189
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    ABLS-24.000MHZ-D-R60-1-W-T Cut Tape 5,740 1
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    Newark ABLS-24.000MHZ-D-R60-1-W-T Reel 1,000 1,000
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    • 1000 $0.454
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    ABLS-24.000MHZ-D-R60-1-W-T Cut Tape 462 1
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    RS ABLS-24.000MHZ-D-R60-1-W-T Bulk 18 Weeks 1,000
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    Bristol Electronics ABLS-24.000MHZ-D-R60-1-W-T 479
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    Avnet Abacus ABLS-24.000MHZ-D-R60-1-W-T Reel 12 Weeks 1,000
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    Avnet Asia ABLS-24.000MHZ-D-R60-1-W-T 10 Weeks 1,000
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    Master Electronics ABLS-24.000MHZ-D-R60-1-W-T
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    Broadcom Limited ASSR-601J-500E

    SSR RELAY SPST-NO 10MA 0-1500V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey ASSR-601J-500E Digi-Reel 1,290 1
    • 1 $6.4
    • 10 $5.697
    • 100 $5.0743
    • 1000 $4.84528
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    ASSR-601J-500E Cut Tape 1,290 1
    • 1 $6.4
    • 10 $5.697
    • 100 $5.0743
    • 1000 $4.84528
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    ASSR-601J-500E Reel 850 850
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    • 10000 $3.53875
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    EBV Elektronik ASSR-601J-500E 5,100 20 Weeks 850
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    Vyrian ASSR-601J-500E 2,968
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    ROHM Semiconductor R6012FNJTL

    MOSFET N-CH 600V 12A LPT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey R6012FNJTL Digi-Reel 938 1
    • 1 $3.56
    • 10 $2.462
    • 100 $1.7993
    • 1000 $1.50818
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    R6012FNJTL Cut Tape 938 1
    • 1 $3.56
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    • 100 $1.7993
    • 1000 $1.50818
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    Quest Components R6012FNJTL 80
    • 1 $3.9
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    • 100 $1.95
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    Ameya Holding Limited R6012FNJTL 100 1
    • 1 $3.08148
    • 10 $2.90022
    • 100 $2.53769
    • 1000 $1.81263
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    Arlitech Electronic Corp ATNR6012100MTB

    SMD POWER INDUCTORS 6012 10UH 20
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    DigiKey ATNR6012100MTB Digi-Reel 815 1
    • 1 $0.18
    • 10 $0.152
    • 100 $0.1076
    • 1000 $0.09636
    • 10000 $0.09636
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    ATNR6012100MTB Cut Tape 815 1
    • 1 $0.18
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    • 100 $0.1076
    • 1000 $0.09636
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    Find more R601 price and stock on Findchips.com

    R601 Datasheets (103)

    Part
    ECAD Model
    Manufacturer
    Description
    Curated
    Datasheet Type
    PDF
    R601 Powerex General Purpose Rectifier (200-300 Amperes Average 1400-2600 Volts) Scan PDF
    R60-10 JST Sales America Connectors, Interconnects - Terminals - Ring Connectors - CONN RING CRIMP 1/0 AWG #3/8 Original PDF
    R6010-00 Harwin Low Profile Self-Locking Plastic Spacer, 10.5mm board spacing Scan PDF
    R60100-1COR Cooper Bussmann Fuseholders, Circuit Protection, FUSE BLOK CART 600V 100A CHASSIS Original PDF
    R60100-1CR Cooper Bussmann Fuseholders, Circuit Protection, FUSE BLOK CART 600V 100A CHASSIS Original PDF
    R60100-2COR Cooper Bussmann Fuseholders, Circuit Protection, FUSE BLOK CART 600V 100A CHASSIS Original PDF
    R60100-2CR Cooper Bussmann Fuseholders, Circuit Protection, FUSE BLOK CART 600V 100A CHASSIS Original PDF
    R60100-3COR Cooper Bussmann Fuseholders, Circuit Protection, FUSE BLOK CART 600V 100A CHASSIS Original PDF
    R60100-3CR Cooper Bussmann Fuseholders, Circuit Protection, FUSE BLOK CART 600V 100A CHASSIS Original PDF
    R60100-3CRQ Cooper Bussmann Fuseholders, Circuit Protection, FUSE BLOK CART 600V 100A CHASSIS Original PDF
    R6010120XXYA Powerex 200A Iout, 1.4kV Vrrm General Purpose Silicon Rectifier Scan PDF
    R6010125XXYA Powerex 250A Iout, 1.4kV Vrrm General Purpose Silicon Rectifier Scan PDF
    R6010130XXYA Powerex 300A Iout, 1.4kV Vrrm General Purpose Silicon Rectifier Scan PDF
    R6010220XXYA Powerex 200A Iout, 1.6kV Vrrm General Purpose Silicon Rectifier Scan PDF
    R6010225XXYA Powerex 250A Iout, 1.6kV Vrrm General Purpose Silicon Rectifier Scan PDF
    R6010230XXYA Powerex 300A Iout, 1.6kV Vrrm General Purpose Silicon Rectifier Scan PDF
    R6010420XXYA Powerex 200A Iout, 1.8kV Vrrm General Purpose Silicon Rectifier Scan PDF
    R6010425XXYA Powerex 250A Iout, 1.8kV Vrrm General Purpose Silicon Rectifier Scan PDF
    R6010430XXYA Powerex 300A Iout, 1.8kV Vrrm General Purpose Silicon Rectifier Scan PDF
    R6010620XXYA Powerex 200A Iout, 2kV Vrrm General Purpose Silicon Rectifier Scan PDF

    R601 Datasheets Context Search

    Catalog Datasheet
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    PDF

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet 10V Drive Nch MOSFET R6010ANX  Structure Silicon N-channel MOSFET  Dimensions Unit : mm TO-220FM φ3.2 10.0 4.5 8.0 1.2 1.3 14.0 2.5 15.0 Features 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V.


    Original     		R6010ANX O-220FM R6010ANX R1120A PDF

    Untitled

    Abstract: No abstract text available
    Text: R6015ANX Nch 600V 15A Power MOSFET Datasheet Outline VDSS RDS on (Max.) 600V 0.3Ω ID 15A PD 50W TO-220FM (1)(2)(3) Features Inner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V.


    Original     		R6015ANX O-220FM R1120A PDF

    R6015ANZ

    Abstract: No abstract text available
    Text: Data Sheet 10V Drive Nch MOSFET R6015ANZ  Dimensions Unit : mm 5.5 TO-3PF 15.5 0.44 4.5 2.0 3.0 2.0 2.5 2.0 3.5 16.5 16.5 14.5 26.5 Features 1) Low on-resistance. 2) Low input capacitance. 3) High ESD. 3.0 φ3.6 10.0  Structure Silicon N-channel MOSFET


    Original     		R6015ANZ R6015ANZ R1120A PDF

    Untitled

    Abstract: No abstract text available
    Text: R6015FNX Data Sheet 10V Drive Nch MOSFET R6015FNX  Structure Silicon N-channel MOSFET  Dimensions Unit : mm TO-220FM φ3.2 10.0 4.5 8.0 2.5 15.0 Features 1) Fast reverse recovery time (trr) 12.0 2.8 14.0 2) Low on-resistance. 3) Fast switching speed.


    Original     		R6015FNX O-220FM R6015FNX R1120A PDF

    R6015ANZ

    Abstract: No abstract text available
    Text: R6015ANZ Data Sheet 10V Drive Nch MOSFET R6015ANZ  Dimensions Unit : mm 5.5 TO-3PF 15.5 0.44 4.5 2.0 3.0 2.0 2.5 2.0 3.5 16.5 16.5 14.5 26.5 Features 1) Low on-resistance. 2) Low input capacitance. 3) High ESD. 3.0 φ3.6 10.0  Structure Silicon N-channel MOSFET


    Original     		R6015ANZ R6015ANZ R1120A PDF

    R6015ANX

    Abstract: No abstract text available
    Text: R6015ANX R6015ANX Datasheet Nch 600V 15A Power MOSFET Outline VDSS RDS on (Max.) 600V 0.3Ω ID 15A PD 50W TO-220FM (1)(2)(3) Features Inner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V.


    Original     		R6015ANX O-220FM R1120A R6015ANX PDF

    Untitled

    Abstract: No abstract text available
    Text: 10V Drive Nch MOSFET R6012ANJ Structure Silicon N-channel MOSFET Dimensions Unit : mm LPTS 10.1 4.5 1.24 2.54 0.4 0.78 2.7 5.08 (1) Gate (2) Drain (3) Source 1.2 3.0 1.0 13.1 9.0 7.25 Features 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V.


    Original     		R6012ANJ R0039A PDF

    Untitled

    Abstract: No abstract text available
    Text: 1.60 4.30 1.60 Locking Spacers 4.30 Ø4.80 3.80 3.80 5.60 for R6013 L Locking Spacers low profile self-lock spacers Rigid self-lock spacers Material: Nylon 6/6 UL94V-2. Spacer design uses minimum board area. Recommended PC board thickness 1.6mm. Recommended hole Size Ø4.0mm.


    Original     		R6013) UL94V-2. R6405-00 R6419-00 HM1334: R6505-00 R6535-00 PDF

    R6012AN

    Abstract: No abstract text available
    Text: R6012ANX Datasheet Nch 600V 12A Power MOSFET Outline VDSS 600V RDS on (Max.) 0.42Ω ID 12A PD 50W TO-220FM (1)(2)(3) Features Inner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V.


    Original     		R6012ANX O-220FM R1120A R6012AN PDF

    Untitled

    Abstract: No abstract text available
    Text: R6015FNJ Nch 600V 15A Power MOSFET Datasheet l Outline VDSS 600V RDS on (Max.) 0.35Ω ID ±15A PD 50W LPT(S) l Inner circuit l Features 1) Fast reverse recovery time (trr).


    Original     		R6015FNJ PDF

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet 10V Drive Nch MOSFET R6015FNX  Structure Silicon N-channel MOSFET  Dimensions Unit : mm TO-220FM φ3.2 10.0 4.5 8.0 2.5 15.0 Features 1) Fast reverse recovery time (trr) 12.0 2.8 14.0 2) Low on-resistance. 3) Fast switching speed. 4) Gate-source voltage


    Original     		R6015FNX O-220FM R6015FNX R1120A PDF

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet 10V Drive Nch MOSFET R6015ANZ  Dimensions Unit : mm 5.5 TO-3PF 15.5 0.44 4.5 2.0 3.0 2.0 2.5 2.0 3.5 16.5 16.5 14.5 26.5 Features 1) Low on-resistance. 2) Low input capacitance. 3) High ESD. 3.0 φ3.6 10.0  Structure Silicon N-channel MOSFET


    Original     		R6015ANZ R6015ANZ R1120A PDF

    R6015ENJ

    Abstract: No abstract text available
    Text: R6015ENJ Nch 600V 15A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 0.290W ID 15A PD 40W (2) LPT(S) (SC-83) (1) (3) lFeatures lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 30V. (1) Gate (2) Drain (3) Source


    Original     		R6015ENJ SC-83) R1102A R6015ENJ PDF

    Untitled

    Abstract: No abstract text available
    Text: SONY C X D 1 913 A Q Digital Video Encoder Description The CXD1913AQ is a digital video encoder designed for video CD, car navigation system and other digital video applications. The device accepts ITU-R601 compatible Y, Cb, Cr data and also accepts ITUR656-format Y, Cb, Cr data, and the data are


    OCR Scan     		CXD1913AQ ITU-R601 ITUR656-format 27MHz CXD1913AQ 64PIN QFP-64P-L01 QFP064-P-1420-A PDF

    CPX1204

    Abstract: interlace parity ITU-R601 TD10 CXD1913AQ XTEST aspect ratio i.d encoder
    Text: CXD1913AQ Digital Video Encoder Description The CXD1913AQ is a digital video encoder designed for video CD, car navigation system and other digital video applications. The device accepts ITU-R601 compatible Y, Cb, Cr data and also accepts ITUR656-format Y, Cb, Cr data, and the data are


    Original     		CXD1913AQ CXD1913AQ ITU-R601 ITUR656-format 8/16-bit 10-bit 400kHz) 64PIN QFP-64P-L01 CPX1204 interlace parity ITU-R601 TD10 XTEST aspect ratio i.d encoder PDF

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet 10V Drive Nch MOSFET R6015ANZ  Dimensions Unit : mm 5.5 TO-3PF 15.5 0.44 4.5 2.0 3.0 2.0 2.5 2.0 3.5 16.5 16.5 14.5 26.5 Features 1) Low on-resistance. 2) Low input capacitance. 3) High ESD. 3.0 φ3.6 10.0  Structure Silicon N-channel MOSFET


    Original     		R6015ANZ R1120A PDF

    9A050

    Abstract: R6018
    Text: R6018ANX R6018ANX Datasheet Nch 600V 18A Power MOSFET Outline VDSS 600V RDS on (Max.) 0.27Ω ID 18A PD 50W TO-220FM (1)(2)(3) Features Inner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V.


    Original     		R6018ANX O-220FM R1120A 9A050 R6018 PDF

    R6012ANX

    Abstract: No abstract text available
    Text: R6012ANX Transistors 10V Drive Nch MOSFET R6012ANX zDimensions Unit : mm zStructure Silicon N-channel MOSFET TO-220FM 10.0 φ3.2 4.5 8.0 1.2 1.3 14.0 2.5 15.0 zFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V.


    Original     		R6012ANX O-220FM R6012ANX PDF

    r6012anx

    Abstract: No abstract text available
    Text: R6012ANX R6012ANX Datasheet Nch 600V 12A Power MOSFET Outline VDSS 600V RDS on (Max.) 0.42Ω ID 12A PD 50W TO-220FM (1)(2)(3) Features Inner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V.


    Original     		R6012ANX O-220FM R1120A r6012anx PDF

    Untitled

    Abstract: No abstract text available
    Text: 10V Drive Nch MOSFET R6018ANX Dimensions Unit : mm Structure Silicon N-channel MOSFET TO-220FM φ3.2 10.0 4.5 8.0 0.8 (1) Gate (2) Drain (3) Source Applications Switching Packaging specifications Type 1.2 1.3 14.0 2.5 15.0 Features 1) Low on-resistance.


    Original     		R6018ANX O-220FM R1120A PDF

    Untitled

    Abstract: No abstract text available
    Text: R6015ANJ Nch 600V 15A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 0.3W ID 15A PD 100W LPTS (SC-83) lFeatures lInner circuit 1) Low on-resistance. 2) Fast switching speed. (1) Gate (2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 30V.


    Original     		R6015ANJ SC-83) R1120A PDF

    R3-32

    Abstract: R601094
    Text: R601/R602/R332/WF1608/WF2012SERIES Description The device is a high frequency, wire-wound ferrite SMD chip inductor designed for choking RF signals in the bias circuit（power supply）and for countermeasure against the unnecessary radiation in electronic systems, such as


    Original     		WF1608, WF2012. 15typ 14typ 23typ 2000MHz R3-32 R601094 PDF

    CCD216

    Abstract: top 261 yn ccd211 CCD114 ITU-R624-3 ccir rec 624-3 CCD220 CCD110 CCD123 CCD212
    Text: TC90A32F Preliminary TOSHIBA CMOS Digital Interated Circuit Silicon Monolithic TC90A32F Digital Video Encoder The TC90A32F converts a digital image’s Y, Cb and Cr signals, which conform to ITU-R601/656 standards, to analog Y and C composite signals for NTSC and PAL systems.


    Original     		TC90A32F TC90A32F ITU-R601/656 8-bit/16-bit) 10-bit 27-MHz YCDI13 YCDI12 YCDI11 CCD216 top 261 yn ccd211 CCD114 ITU-R624-3 ccir rec 624-3 CCD220 CCD110 CCD123 CCD212 PDF

    R6015ENZ

    Abstract: No abstract text available
    Text: R6015ENZ Nch 600V 15A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 0.290W ID 15A PD 120W TO-3PF (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 30V. (1) Gate (2) Drain (3) Source 4) Drive circuits can be simple.


    Original     		R6015ENZ R1102A R6015ENZ PDF