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    R5B TRANSISTOR Search Results

    R5B TRANSISTOR Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    R5B TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    9c12063a49r9fkrft

    Abstract: BNC T connector 9C12063A0R00JLHFT
    Text: THS3112/22 EVM User’s Guide May 2002 HPL SLOU125 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries TI reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue


    Original     		PDF THS3112/22 SLOU125 THS3112 THS31x2DDA THS31x2DDA 9c12063a49r9fkrft BNC T connector 9C12063A0R00JLHFT

    BNC T connector

    Abstract: dc jack 3.5 SLOA072
    Text: THS3115/25 EVM User’s Guide May 2002 HPL SLOU126 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries TI reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue


    Original     		PDF THS3115/25 SLOU126 THS3115 THS31x5PWP BNC T connector dc jack 3.5 SLOA072

    transmitter 446 mhz

    Abstract: R5B transistor J960 470-860 mhz Power amplifier w
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF372 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this device


    Original     		PDF MRF372 transmitter 446 mhz R5B transistor J960 470-860 mhz Power amplifier w

    RO3010

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF372 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this


    Original     		PDF MRF372 RO3010

    transistor R1A 37

    Abstract: 5233 mosfet J146 VJ1210y
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF372 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this


    Original     		PDF MRF372 transistor R1A 37 5233 mosfet J146 VJ1210y

    C3B Kemet

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Rev. 8, 12/2004 RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF372 MRF372R5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this


    Original     		PDF MRF372 MRF372R5 C3B Kemet

    marking R5b

    Abstract: marking code r5a marking r5a
    Text: Order this document by MC33283/D MC33283 Product Preview Versatile 6 Regulator Power Management Circuit for Cellular Subsriber Terminal The MC33283 is a complete power management solution for portable devices such as telephone handsets, two–way radios, etc. Thanks to its


    Original     		PDF MC33283/D MC33283 MC33283 100kHz) 50dBa MC33283/D marking R5b marking code r5a marking r5a

    marking R5b

    Abstract: No abstract text available
    Text: MC33283 Versatile 6 Regulator Power Management Circuit for Cellular Subscriber Terminal http://onsemi.com POWER MANAGEMENT CIRCUIT FOR PORTABLE DEVICES SILICON MONOLITHIC INTEGRATED CIRCUIT 32 • 6 regulated outputs: • • GND CBYP ENRS GND 1 24 GND OUT7 2


    Original     		PDF MC33283 40mVRMS 10-100kHz) 10kHz, MC33283/D marking R5b

    marking R5b

    Abstract: mark R5A R5B transistor BAT54LT1 BAT54SLT1 MC33283 MC33283FTB28 TQFP32
    Text: Order this document by MC33283/D Versatile 6 Regulator Power Management Circuit for Cellular Subscriber Terminal The MC33283 is a complete power management solution for portable devices such as telephone handsets, two–way radios, etc. Thanks to its large scale integration, the device offers up to seven Low DropOut regulators


    Original     		PDF MC33283/D MC33283 100kHz) 10kHz, marking R5b mark R5A R5B transistor BAT54LT1 BAT54SLT1 MC33283FTB28 TQFP32

    300w power amplifier circuit diagram

    Abstract: 300w mosfet power amplifier circuit diagram CS468125 diode BY 399 300w transistor power amplifier circuit diagram heat sink to220 EVALPFC2-ICE1PCS01 capacitor 0.47uf 275v ice1pcs01 boost type spp20n60c3
    Text: Application Note, V2.0, March 2006 EVALPFC2-ICE1PCS01 300W PFC Evaluation Board with CCM PFC controller ICE1PCS01 Power Management & Supply N e v e r s t o p t h i n k i n g . Edition 2006-03-27 Published by Infineon Technologies Asia Pacific, 168 Kallang Way,


    Original     		PDF EVALPFC2-ICE1PCS01 ICE1PCS01 85VAC, 265VAC, ICE1PCS01 300w power amplifier circuit diagram 300w mosfet power amplifier circuit diagram CS468125 diode BY 399 300w transistor power amplifier circuit diagram heat sink to220 EVALPFC2-ICE1PCS01 capacitor 0.47uf 275v ice1pcs01 boost type spp20n60c3

    j1430

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF372/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field−Effect Transistor MRF372 MRF372R5 N - Channel Enhancement - Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this


    Original     		PDF MRF372/D MRF372 MRF372R5 j1430

    C3B Kemet

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF372/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF372 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this device


    Original     		PDF MRF372/D 31anufacture MRF372 C3B Kemet

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF372/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF372 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this


    Original     		PDF MRF372/D MRF372 MRF372/D

    C14A

    Abstract: MRF372 R5B transistor C10A 473 coilcraft d j937
    Text: MOTOROLA Order this document by MRF372/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF372 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this device


    Original     		PDF MRF372/D MRF372 C14A MRF372 R5B transistor C10A 473 coilcraft d j937

    balun 75 ohm

    Abstract: C14A RO3010 MRF372 c9ab
    Text: MOTOROLA Order this document by MRF372/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF372 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this


    Original     		PDF MRF372/D MRF372 balun 75 ohm C14A RO3010 MRF372 c9ab

    TRANSISTOR 7812 ct

    Abstract: regulator 7812 ct motorola sc 7812 REGULATOR IC 7812 motorola 1N4148 7812 voltage regulator 5A SPWM IC datasheet RS 7812 7812 12V 1A positive voltage regulator 7812 ct
    Text: April 1998 ML4812* Power Factor Controller GENERAL DESCRIPTION FEATURES The ML4812 is designed to optimally facilitate a peak current control boost type power factor correction system. Special care has been taken in the design of the ML4812 to increase system noise immunity. The circuit includes a


    Original     		PDF ML4812* ML4812 ML4812 DS4812-01 TRANSISTOR 7812 ct regulator 7812 ct motorola sc 7812 REGULATOR IC 7812 motorola 1N4148 7812 voltage regulator 5A SPWM IC datasheet RS 7812 7812 12V 1A positive voltage regulator 7812 ct

    marking c14a

    Abstract: RO3010 mrf372 marking L4A c7a series vishay capacitor NTHS-1206J14520R5 bc16a C15B transistor D 863 vishay 1001
    Text: Freescale Semiconductor Technical Data Document Number: MRF372 Rev. 9, 5/2006 RF Power Field-Effect Transistor MRF372R3 MRF372R5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of


    Original     		PDF MRF372 MRF372R3 MRF372R5 MRF372 marking c14a RO3010 marking L4A c7a series vishay capacitor NTHS-1206J14520R5 bc16a C15B transistor D 863 vishay 1001

    part marking information vishay HD 1

    Abstract: l1a marking MRF372R5
    Text: Freescale Semiconductor Technical Data Document Number: MRF372 Rev. 9, 5/2006 RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF372R3 MRF372R5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this


    Original     		PDF MRF372 MRF372R3 MRF372R5 MRF372 part marking information vishay HD 1 l1a marking MRF372R5

    R10B

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MRF372 Rev. 8, 12/2004 RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF372 MRF372R5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this


    Original     		PDF MRF372 MRF372R5 R10B

    marking c14a

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF372 Rev. 9, 5/2006 RF Power Field-Effect Transistor MRF372R3 MRF372R5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of


    Original     		PDF MRF372 MRF372R3 MRF372R5 MRF372R3 marking c14a

    MRF372

    Abstract: C14A MRF372R5 transmitter 446 mhz TRANSISTOR 1003
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF372/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field−Effect Transistor MRF372 MRF372R5 Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this


    Original     		PDF MRF372/D MRF372 MRF372R5 MRF372 C14A MRF372R5 transmitter 446 mhz TRANSISTOR 1003

    R4A marking

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MRF372 Rev. 8, 12/2004 RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF372 MRF372R5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this


    Original     		PDF MRF372 MRF372R5 R4A marking

    Transistors bd 133

    Abstract: C 1972 transistor transistor IC BT 136 BD229 BD231 transistor IC BT 134 BD227 BD226 BD230 TRANSISTOR BD 137
    Text: BD227 BD229 BD231 SILICON PLANAR EPITAXIAL POWER TRANSISTORS General purpose pnp transistors in a SOT-32 plastic envelope especially recommended for television circuits. Their complements are BD226, 8D228 and BD230. QUICK REFERENCE DATA


    OCR Scan     		PDF BD227 BD229 BD231 OT-32 BD226, 8D228 BD230. BD229 Transistors bd 133 C 1972 transistor transistor IC BT 136 BD231 transistor IC BT 134 BD226 BD230 TRANSISTOR BD 137

    L020U

    Abstract: No abstract text available
    Text: Order this document by MC33283/D M MOTOROLA — — Versatile 6 Regulator Power Managem ent Circuit for Cellular Subscriber Terminal The MC33283 is a complete power management solution for portable devices such as telephone handsets, two-way radios, etc. Thanks to its


    OCR Scan     		PDF MC33283/D MC33283 10-100kHz) 10kHz, L020U