MX105A
Abstract: mark R5A R5B transistor 12c5a fp2-c2 digital filter calculus
Text: APPLICATION NOTE Tone Generation - An Application of the MX105A This Application Note describes how to configure an MX105A as a tone generator. It may be helpful to refer to the current MX105A data sheet before reading this document. The MX105A was primarily designed as a
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MX105A
MX105A
mark R5A
R5B transistor
12c5a
fp2-c2
digital filter calculus
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INA117KP
Abstract: mark R5A R5A MARK R4A print AB-029 CMR117 INA105 INA105BM INA117 INA117BM
Text: APPLICATION BULLETIN Mailing Address: PO Box 11400 • Tucson, AZ 85734 • Street Address: 6730 S. Tucson Blvd. • Tucson, AZ 85706 Tel: 602 746-1111 • Twx: 910-952-111 • Telex: 066-6491 • FAX (602) 889-1510 • Immediate Product Info: (800) 548-6132
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INA117
INA117.
INA117
INA117KP
mark R5A
R5A MARK
R4A print
AB-029
CMR117
INA105
INA105BM
INA117BM
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mark R5A
Abstract: ti 72m INA117KP transistor r4c INA105 AB-029 CMR117 INA105BM INA117 INA117BM
Text: APPLICATION BULLETIN Mailing Address: PO Box 11400 • Tucson, AZ 85734 • Street Address: 6730 S. Tucson Blvd. • Tucson, AZ 85706 Tel: 602 746-1111 • Twx: 910-952-111 • Telex: 066-6491 • FAX (602) 889-1510 • Immediate Product Info: (800) 548-6132
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INA117
INA117.
INA117
mark R5A
ti 72m
INA117KP
transistor r4c
INA105
AB-029
CMR117
INA105BM
INA117BM
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Untitled
Abstract: No abstract text available
Text: PKJ 4000E PI DC/DC converter Input 36-75 Vdc Output up to 40A/100W Key Features • Industry standard Half-brick 58x61x8.5 mm 2.3x2.4x0.33 in • Low profile, max 8.5 mm (0.33 in) • RoHS Compliant • High efficiency, typ. 93 % at 3.3 Vout half load • 1500 VDC input to output isolation,
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4000E
0A/100W
58x61x8
SE-126
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Marking g3p
Abstract: G37F marking g3N voltage regulator sot-89-5 R5 SOT mark R5A g33c
Text: Preliminary Datasheet 600mA CMOS LDO REGULATOR WITH ENABLE General Description Features The AP2112 is CMOS process low dropout linear regulator with enable function, the regulator delivers a guaranteed 600mA min. continuous load current. • • • •
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600mA
AP2112
600mA
OT-23-5,
OT-89-5,
AP2112
Marking g3p
G37F
marking g3N
voltage regulator sot-89-5
R5 SOT
mark R5A
g33c
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AP2112
Abstract: Linear Regulator sot-89-5 marking g3p G37F voltage regulator sot-89-5 AP2112K marking g3n
Text: Data Sheet 600mA CMOS LDO REGULATOR WITH ENABLE General Description Features The AP2112 is CMOS process low dropout linear regulator with enable function, the regulator delivers a guaranteed 600mA min. continuous load current. • • • • • The AP2112 provides 1.2V, 1.8V, 2.5V, 2.6V, 2.8V
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600mA
AP2112
600mA
OT-23-5,
OT-89-5,
AP2112
Linear Regulator sot-89-5
marking g3p
G37F
voltage regulator sot-89-5
AP2112K
marking g3n
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AP2112K-3
Abstract: No abstract text available
Text: Data Sheet 600mA CMOS LDO REGULATOR WITH ENABLE General Description Features The AP2112 is CMOS process low dropout linear regulator with enable function, the regulator delivers a guaranteed 600mA min. continuous load current. • • • • • The AP2112 provides 1.2V, 1.8V, 2.5V, 2.6V, 2.8V
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600mA
AP2112
600mA
AP2112
OT-23-5,
OT-89-5,
AP2112K-3
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marking R5b
Abstract: marking code r5a marking r5a
Text: Order this document by MC33283/D MC33283 Product Preview Versatile 6 Regulator Power Management Circuit for Cellular Subsriber Terminal The MC33283 is a complete power management solution for portable devices such as telephone handsets, two–way radios, etc. Thanks to its
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MC33283/D
MC33283
MC33283
100kHz)
50dBa
MC33283/D
marking R5b
marking code r5a
marking r5a
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marking R5b
Abstract: No abstract text available
Text: MC33283 Versatile 6 Regulator Power Management Circuit for Cellular Subscriber Terminal http://onsemi.com POWER MANAGEMENT CIRCUIT FOR PORTABLE DEVICES SILICON MONOLITHIC INTEGRATED CIRCUIT 32 • 6 regulated outputs: • • GND CBYP ENRS GND 1 24 GND OUT7 2
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MC33283
40mVRMS
10-100kHz)
10kHz,
MC33283/D
marking R5b
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marking R5b
Abstract: mark R5A R5B transistor BAT54LT1 BAT54SLT1 MC33283 MC33283FTB28 TQFP32
Text: Order this document by MC33283/D Versatile 6 Regulator Power Management Circuit for Cellular Subscriber Terminal The MC33283 is a complete power management solution for portable devices such as telephone handsets, two–way radios, etc. Thanks to its large scale integration, the device offers up to seven Low DropOut regulators
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MC33283/D
MC33283
100kHz)
10kHz,
marking R5b
mark R5A
R5B transistor
BAT54LT1
BAT54SLT1
MC33283FTB28
TQFP32
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transmitter 446 mhz
Abstract: R5B transistor J960 470-860 mhz Power amplifier w
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF372 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this device
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MRF372
transmitter 446 mhz
R5B transistor
J960
470-860 mhz Power amplifier w
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C3B Kemet
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Rev. 8, 12/2004 RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF372 MRF372R5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this
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MRF372
MRF372R5
C3B Kemet
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transistor R1A 37
Abstract: 5233 mosfet J146 VJ1210y
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF372 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this
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MRF372
transistor R1A 37
5233 mosfet
J146
VJ1210y
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RO3010
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF372 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this
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MRF372
RO3010
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet 1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE General Description Features The AP2115 is CMOS process low dropout linear regulator with enable function, the regulator delivers a guaranteed 1A min. continuous load current • • • •
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AP2115
OT-89-5.
AP2115
450mV
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C3B Kemet
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF372/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF372 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this device
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MRF372/D
31anufacture
MRF372
C3B Kemet
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balun 75 ohm
Abstract: C14A RO3010 MRF372 c9ab
Text: MOTOROLA Order this document by MRF372/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF372 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this
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MRF372/D
MRF372
balun 75 ohm
C14A
RO3010
MRF372
c9ab
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MRF372
Abstract: MRF372D C14A 473 coilcraft d variable resistor 0224 25 ohm c7a series vishay capacitor RO3010
Text: MOTOROLA Order this document by MRF372/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF372 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this
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MRF372/D
MRF372
MRF372
MRF372D
C14A
473 coilcraft d
variable resistor 0224 25 ohm
c7a series vishay capacitor
RO3010
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF372/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF372 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this
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MRF372/D
MRF372
MRF372/D
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C14A
Abstract: MRF372 R5B transistor C10A 473 coilcraft d j937
Text: MOTOROLA Order this document by MRF372/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF372 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this device
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MRF372/D
MRF372
C14A
MRF372
R5B transistor
C10A
473 coilcraft d
j937
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j1430
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF372/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field−Effect Transistor MRF372 MRF372R5 N - Channel Enhancement - Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this
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MRF372/D
MRF372
MRF372R5
j1430
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marking c14a
Abstract: RO3010 mrf372 marking L4A c7a series vishay capacitor NTHS-1206J14520R5 bc16a C15B transistor D 863 vishay 1001
Text: Freescale Semiconductor Technical Data Document Number: MRF372 Rev. 9, 5/2006 RF Power Field-Effect Transistor MRF372R3 MRF372R5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of
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MRF372
MRF372R3
MRF372R5
MRF372
marking c14a
RO3010
marking L4A
c7a series vishay capacitor
NTHS-1206J14520R5
bc16a
C15B
transistor D 863
vishay 1001
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Untitled
Abstract: No abstract text available
Text: •314 inch Solder pin angled high density with threaded lock and metal bracket Socket connector Plug connector 8 1— - t f ! -, r •\ Q IPVII | * 0 65 c Kat 1 i R4A Kat 1 i R5A B *0,25 A -0,76 B - 0,25 C 15 31,19
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L020U
Abstract: No abstract text available
Text: Order this document by MC33283/D M MOTOROLA — — Versatile 6 Regulator Power Managem ent Circuit for Cellular Subscriber Terminal The MC33283 is a complete power management solution for portable devices such as telephone handsets, two-way radios, etc. Thanks to its
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MC33283/D
MC33283
10-100kHz)
10kHz,
L020U
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