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ROHM Semiconductor R5011FNX MOSFET N-CH 500V 11/5.4A TO220FM
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	R5011FNX	Bulk	418		1	1 $4.36 10 $3.031 100 $4.36 1000 $4.36 10000 $4.36	Buy Now
	R5011FNX	Bulk			500	1 - 10 - 100 - 1000 $2.29366 10000 $2.29366	Buy Now
Mouser Electronics	R5011FNX		477			1 $4.71 10 $3.96 100 $3.2 1000 $2.59 10000 $2.51	Buy Now
Future Electronics	R5011FNX	Bulk		23 Weeks	500	1 - 10 - 100 - 1000 $1.97 10000 $1.97	Buy Now
Quest Components	R5011FNX		400			1 $5.037 10 $5.037 100 $3.1062 1000 $2.7704 10000 $2.7704	Buy Now
CoreStaff Co Ltd	R5011FNX		500			1 $3.02 10 $2.478 100 $1.862 1000 $1.679 10000 $1.679	Buy Now

R5011FNX Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
R5011FNX		ROHM	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 11A TO-220FM		Original	PDF

R5011FNX Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: R5011FNX Nch 500V 11A Power MOSFET Datasheet lOutline VDSS 500V RDS on (Max.) 0.52W ID 11A PD 50W TO-220FM (1)(2)(3) lFeatures lInner circuit 1) Fast reverse recovery time (trr). 2) Low on-resistance. (1) Gate (2) Drain (3) Source 3) Fast switching speed.	Original	R5011FNX O-220FM R1120A	PDF
504c diode Abstract: R5011FNX Text: 10V Drive Nch MOSFET R5011FNX zDimensions Unit : mm zStructure Silicon N-channel MOSFET TO-220FM 10.0 φ3.2 4.5 8.0 1.2 1.3 14.0 2.5 15.0 zFeatures 1) Fast reverse recovery time. 2) Low on-resistance. 3) Fast switching speed. 4) Gate-source voltage (VGSS) guaranteed to be ±30V.	Original	R5011FNX O-220FM R0039A 504c diode R5011FNX	PDF
Untitled Abstract: No abstract text available Text: R5011FNX R5011FNX Datasheet Nch 500V 11A Power MOSFET lOutline VDSS 500V RDS on (Max.) 0.52W ID 11A PD 50W TO-220FM (1)(2)(3) lFeatures lInner circuit 1) Fast reverse recovery time (trr). (1) Gate (2) Drain (3) Source 2) Low on-resistance. 3) Fast switching speed.	Original	R5011FNX O-220FM R5011FNX R1120A	PDF
Untitled Abstract: No abstract text available Text: R5011FNX 10V Drive Nch MOSFET - R5011FNX MOSFET, one of Fild Effect Transistors. ROHM has low current type power MOSFETs of high-efficiency / high breakdown resistance for switching power supply to meet various needs in the market. Part number Status Package	Original	R5011FNX O-220FM RdsOnVgs10000	PDF
Untitled Abstract: No abstract text available Text: R5011FNX Nch 500V 11A Power MOSFET Datasheet lOutline VDSS 500V RDS on (Max.) 0.52W ID 11A PD 50W TO-220FM (1)(2)(3) lFeatures lInner circuit 1) Fast reverse recovery time (trr). (1) Gate (2) Drain (3) Source 2) Low on-resistance. 3) Fast switching speed.	Original	R5011FNX O-220FM R1120A	PDF
Untitled Abstract: No abstract text available Text: R5011FNX Datasheet Nch 500V 11A Power MOSFET lOutline VDSS 500V RDS on (Max.) 0.52W ID 11A PD 50W TO-220FM (1)(2)(3) lFeatures lInner circuit 1) Fast reverse recovery time (trr). (1) Gate (2) Drain (3) Source 2) Low on-resistance. 3) Fast switching speed.	Original	R5011FNX O-220FM R5011FNX R1120A	PDF
RSD130P10 Abstract: rsd220n06 RDR005N25 RP1E090 RSD130P R6015 RCD040N25 rcd080n25 RSD050N10 R5207AND Text: 2010 ѻકⳂᔩ Discrete Semiconductors MOSFET MOSFET ᦤկ㛑໳ᑨ⫼Ѣᑓ⊯乚ඳⱘPower MOSFETˈҢ⫼Ѣ֓ᨎ䆒໛ⱘǃ 䞛⫼њ㊒ᆚᎹᑣⱘ䍙Ԣᇐ䗮⬉䰏䚼ӊˈࠄ⫼Ѣᓔ݇⬉⑤ⱘǃ催ᬜ⥛ 㗤催य़䚼ӊˈϔᑨ‫ܼׅ‬Ǆ 01 MOSFET Contents	Original	RUM002N02 RZM002P02 RUE002N02 RZE002P02 RUM002N05 RUE002N05 RZF013P01 RZL025P01 RZR020P01 RW1A013ZP RSD130P10 rsd220n06 RDR005N25 RP1E090 RSD130P R6015 RCD040N25 rcd080n25 RSD050N10 R5207AND	PDF
RSD130P10 Abstract: RDR005N25 RCD040N25 rsd220n06 RSY200N05 RSD050N10 RCX100N25 R5207AND RP1E090 rsy200 Text: 2010 Product Catalog Discrete Semiconductors MOSFETs MOSFETs ROHM offers a wide selection of MOSFETs, ranging from ultra-low ON-resistance products utilizing micro-process technology, high efficiency/breakdown units for switching applications, and high power components optimized for commercial/industrial systems.	Original	5V/60V R0039A 52P6214E RSD130P10 RDR005N25 RCD040N25 rsd220n06 RSY200N05 RSD050N10 RCX100N25 R5207AND RP1E090 rsy200	PDF