marking r4s
Abstract: bfp640f BFP640F equivalent ccb 21
Text: BFP640F XYs NPN Silicon Germanium RF Transistor* • High gain low noise RF transistor 3 • Provides outstanding performance 2 4 for a wide range of wireless applications 1 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz
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BFP640F
Mar-11-2004
marking r4s
bfp640f
BFP640F equivalent
ccb 21
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Untitled
Abstract: No abstract text available
Text: BFP640F XYs NPN Silicon Germanium RF Transistor* • High gain low noise RF transistor 3 • Provides outstanding performance 2 4 for a wide range of wireless applications 1 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz
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BFP640F
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marking r4s
Abstract: R4S BFP640 BFP640 BFP640 noise figure
Text: BFP640 3 NPN Silicon Germanium RF Transistor Preliminary data 4 High gain low noise RF transistor Provides outstanding performance for a wide range of wireless applications 2 Ideal for CDMA and WLAN applications 1 Outstanding noise figure F = 0.65 dB at 1.8 GHz
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BFP640
VPS05605
OT343
Jul-25-2002
marking r4s
R4S BFP640
BFP640
BFP640 noise figure
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PDF
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4ghz s parameters transistor
Abstract: No abstract text available
Text: BFP640 NPN Silicon Germanium RF Transistor 3 4 BFP640E/L6327 and E/L7764 • High gain low noise RF transistor • Provides outstanding performance 2 for a wide range of wireless applications • Ideal for CDMA and WLAN applications 1 VPS05605 • Outstanding noise figure F = 0.65 dB at 1.8 GHz
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BFP640
BFP640E/L6327
E/L7764
L6327
L7764
VPS05605
Mar-01-2004
4ghz s parameters transistor
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PDF
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bfp640f
Abstract: SPICE 2G6 transistor BF 298
Text: BFP640F XYs NPN Silicon Germanium RF Transistor* • High gain low noise RF transistor 3 • Provides outstanding performance 2 4 for a wide range of wireless applications 1 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz
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BFP640F
bfp640f
SPICE 2G6
transistor BF 298
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R4S BFP640
Abstract: BFP640 transistor ph 45 v marking r4s
Text: BFP640 NPN Silicon Germanium RF Transistor 3 4 • High gain low noise RF transistor • Provides outstanding performance for a wide range of wireless applications 2 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz
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BFP640
VPS05605
OT343
Aug-16-2004
R4S BFP640
BFP640
transistor ph 45 v
marking r4s
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PDF
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BFP640 noise figure
Abstract: s parameters 4ghz
Text: BFP640 E/L6327 and E/L7764 NPN Silicon Germanium RF Transistor 3 4 • High gain low noise RF transistor • Provides outstanding performance for a wide range of wireless applications 2 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz
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Original
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BFP640
E/L6327
E/L7764
L6327
L7764
VPS05605
BFP640
Oct-30-2003
BFP640 noise figure
s parameters 4ghz
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PDF
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R4S BFP640
Abstract: BFP640 VPS05605 4ghz s parameters transistor s parameters 4ghz
Text: BFP640 NPN Silicon Germanium RF Transistor 3 4 • High gain low noise RF transistor • Provides outstanding performance for a wide range of wireless applications 2 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz
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BFP640
VPS05605
OT343
Apr-21-2004
R4S BFP640
BFP640
VPS05605
4ghz s parameters transistor
s parameters 4ghz
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PDF
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Untitled
Abstract: No abstract text available
Text: BFP640 NPN Silicon Germanium RF Transistor • High gain low noise RF transistor 3 • Provides outstanding performance 2 4 for a wide range of wireless applications 1 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz
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BFP640
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bfp640f
Abstract: BFP420F
Text: BFP640F NPN Silicon Germanium RF Transistor* • High gain low noise RF transistor 3 • Provides outstanding performance 2 4 1 for a wide range of wireless applications • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz
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BFP640F
bfp640f
BFP420F
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BFP640E6327
Abstract: BFP640 noise figure bfp640e R4S BFP640
Text: BFP640 NPN Silicon Germanium RF Transistor • High gain low noise RF transistor 3 • Provides outstanding performance 2 4 for a wide range of wireless applications 1 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz
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Original
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BFP640
OT343
726-BFP640E6327
E6327
BFP640E6327
BFP640 noise figure
bfp640e
R4S BFP640
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PDF
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bfp640f
Abstract: bfp640 R4S BFP640F BFP420F Infineon Technologies transistor 4 ghz
Text: BFP640F NPN Silicon Germanium RF Transistor* • High gain low noise RF transistor 3 • Provides outstanding performance 2 4 1 for a wide range of wireless applications • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz
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BFP640F
bfp640f
bfp640
R4S BFP640F
BFP420F
Infineon Technologies transistor 4 ghz
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PDF
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marking re
Abstract: BFP640 BGA420 T-25
Text: BFP640 NPN Silicon Germanium RF Transistor • High gain low noise RF transistor 3 • Provides outstanding performance 2 4 for a wide range of wireless applications 1 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz
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BFP640
OT343
marking re
BFP640
BGA420
T-25
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bfp640
Abstract: BFP640/F
Text: BFP640 NPN Silicon Germanium RF Transistor 3 4 • High gain low noise RF transistor • Provides outstanding performance for a wide range of wireless applications 2 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz
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BFP640
VPS05605
OT343
bfp640
BFP640/F
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Untitled
Abstract: No abstract text available
Text: BFP640F NPN Silicon Germanium RF Transistor* • High gain low noise RF transistor 3 • Provides outstanding performance 2 4 1 for a wide range of wireless applications • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz
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BFP640F
BFP640may
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irfb4115
Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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element-14
F155-6A
F155-10A
F165-15A
F175-25A
irfb4115
BTY79 equivalent
diode skn 21-04
marking CODE W04 sot-23
bbc 598 479 DIODE
mw 137 600g
TFK 401 S 673
Vishay Telefunken tfk transistor
INFINEON transistor marking W31
JYs marking transistor
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