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    R4305 TRANSISTOR Search Results

    R4305 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    R4305 TRANSISTOR Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: FJN4305R PNP Epitaxial Silicon Transistor Features • Switching Circuit, Inverter, Interface Circuit, Driver Circuit • Built-in Bias Resistor R1 = 4.7 kΩ, R2 = 10 kΩ • Complement to FJN3305R Application • Switching Application (Integrated Bias Resistor)


    Original     		PDF FJN4305R FJN3305R FJN4305RTA R4305 FJN4305R

    R4305 transistor

    Abstract: No abstract text available
    Text: FJN4305R PNP Epitaxial Silicon Transistor Features • Switching Circuit, Inverter, Interface Circuit, Driver Circuit • Built-in Bias Resistor R1 = 4.7 kΩ, R2 = 10 kΩ • Complement to FJN3305R Application • Switching Application (Integrated Bias Resistor)


    Original     		PDF FJN4305R FJN3305R FJN4305RTA R4305 R4305 transistor

    Untitled

    Abstract: No abstract text available
    Text: FJN4305R PNP Epitaxial Silicon Transistor with Bias Resistor Features Description • 100 mA Output Current Capability • Built-in Bias Resistor R1 = 4.7 kΩ, R2 = 10 kΩ Transistors with built-in resistors can be excellent space- and cost-saving solutions by reducing component count and simplifying circuit design.


    Original     		PDF FJN4305R FJN4305RTA R4305