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    R2S SOT23 Search Results

    R2S SOT23 Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation

    R2S SOT23 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    bfr93a

    Abstract: No abstract text available
    Text: BFR93A NPN Silicon RF Transistor* • For low-noise, high gain broadband amplifiers at collector currents from 2 mA to 30 mA 2 3 * Short term description 1 ESD Electrostatic discharge sensitive device, observe handling precaution! Type BFR93A Marking R2s


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    PDF BFR93A bfr93a

    marking 93A

    Abstract: BFR93A transistor marking R2s
    Text: BFR 93A NPN Silicon RF Transistor 3  For low-noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFR 93A R2s Pin Configuration


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    PDF VPS05161 OT-23 900MHz Oct-13-1999 marking 93A BFR93A transistor marking R2s

    BFR93a

    Abstract: No abstract text available
    Text: BFR93A NPN Silicon RF Transistor 3  For low-noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFR93A R2s Pin Configuration 1=B


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    PDF BFR93A VPS05161 BFR93a

    R2S sot23

    Abstract: No abstract text available
    Text: BFR93A NPN Silicon RF Transistor 3  For low-noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFR93A R2s Pin Configuration 1=B


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    PDF BFR93A VPS05161 R2S sot23

    transistor marking R2s

    Abstract: transistor BFR93A BFR93A equivalent transistor of bfr93a
    Text: BFR93A NPN Silicon RF Transistor 3  For low-noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFR93A R2s Pin Configuration 1=B


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    PDF BFR93A VPS05161 900MHz Jun-27-2001 transistor marking R2s transistor BFR93A BFR93A equivalent transistor of bfr93a

    transistor r2w

    Abstract: R2S sot23 R2w sot23 transistor R2U ADR5041BKSZ-REEL71 adr5041akszr21 SHUNT R2U ADR5041B r2w 23 r2w sot-23
    Text: Precision Micropower Shunt Mode Voltage References ADR5040/ADR5041/ADR5043/ADR5044/ADR5045 FEATURES PIN CONFIGURATION ADR5040/ADR5041/ ADR5043/ADR5044/ ADR5045 Ultracompact SC70 and SOT-23 packages Low temperature coefficient: 75 ppm/°C maximum Pin compatible with LM4040/LM4050


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    PDF ADR5040/ADR5041/ADR5043/ADR5044/ADR5045 ADR5040/ADR5041/ ADR5043/ADR5044/ ADR5045 OT-23 LM4040/LM4050 transistor r2w R2S sot23 R2w sot23 transistor R2U ADR5041BKSZ-REEL71 adr5041akszr21 SHUNT R2U ADR5041B r2w 23 r2w sot-23

    transistor r2w

    Abstract: Philips KS 40 Temperature Control R2w sot23 ADR5041BRTZREEL7 ADR5044WARTZ-R7 r2w 23 ADR5041BKSZ-R2 ADR5041ARTZ-R2
    Text: Precision Micropower Shunt Mode Voltage References ADR5040/ADR5041/ADR5043/ADR5044/ADR5045 FEATURES PIN CONFIGURATION ADR5040/ADR5041/ ADR5043/ADR5044/ ADR5045 Ultracompact SC70 and SOT-23 packages Low temperature coefficient: 75 ppm/°C maximum Pin compatible with LM4040/LM4050


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    PDF OT-23 LM4040/LM4050 ADR5040/ADR5041/ADR5043/ADR5044/ADR5045 ADR5040/ADR5041/ ADR5043/ADR5044/ ADR5045 ADR5040/ADR5041/ADR5043/ADR5044/ADR5045 D06526-0-8/12 transistor r2w Philips KS 40 Temperature Control R2w sot23 ADR5041BRTZREEL7 ADR5044WARTZ-R7 r2w 23 ADR5041BKSZ-R2 ADR5041ARTZ-R2

    transistor r2w

    Abstract: ADR5044BKSZ ad5247 ADR5041AKSZ-REEL7 ADR5041AKSZ
    Text: Precision Micropower Shunt Mode Voltage References ADR5040/ADR5041/ADR5043/ADR5044/ADR5045 FEATURES PIN CONFIGURATION ADR5040/ADR5041/ ADR5043/ADR5044/ ADR5045 Ultracompact SC70 and SOT-23 packages Low temperature coefficient: 75 ppm/°C maximum Pin compatible with LM4040/LM4050


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    PDF ADR5040/ADR5041/ADR5043/ADR5044/ADR5045 OT-23 LM4040/LM4050 ADR5040/ADR5041/ ADR5043/ADR5044/ ADR5045 OT-23 ADR5040/ADR5041/ADR5043/ADR5044/ADR5045 D06526-0-1/07 transistor r2w ADR5044BKSZ ad5247 ADR5041AKSZ-REEL7 ADR5041AKSZ

    transistor r2w

    Abstract: r2w sot-23
    Text: Precision Micropower Shunt Mode Voltage References ADR5040/ADR5041/ADR5043/ADR5044/ADR5045 FEATURES PIN CONFIGURATION ADR5040/ADR5041/ ADR5043/ADR5044/ ADR5045 Ultracompact SC70 and SOT-23 packages Low temperature coefficient: 75 ppm/°C maximum Pin compatible with LM4040/LM4050


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    PDF ADR5040/ADR5041/ADR5043/ADR5044/ADR5045 ADR5040/ADR5041/ ADR5043/ADR5044/ ADR5045 OT-23 LM4040/LM4050 OT-23 D06526-0-8/12 transistor r2w r2w sot-23

    adr5041

    Abstract: ADR5041ARTZ transistor r2w Philips KS 40 Temperature Control ADR5041BKSZ-REEL7 transistor R2U SHUNT R2U adr5041aksz-r21
    Text: Precision Micropower Shunt Mode Voltage References ADR5040/ADR5041/ADR5043/ADR5044/ADR5045 FEATURES PIN CONFIGURATION ADR5040/ADR5041/ ADR5043/ADR5044/ ADR5045 Ultracompact SC70 and SOT-23 packages Low temperature coefficient: 75 ppm/°C maximum Pin compatible with LM4040/LM4050


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    PDF ADR5040/ADR5041/ADR5043/ADR5044/ADR5045 ADR5040/ADR5041/ ADR5043/ADR5044/ ADR5045 OT-23 LM4040/LM4050 D06526-0-12/07 adr5041 ADR5041ARTZ transistor r2w Philips KS 40 Temperature Control ADR5041BKSZ-REEL7 transistor R2U SHUNT R2U adr5041aksz-r21

    3SOT-23-3

    Abstract: R2w sot23 ADR504x adr5041aksz-r21 r2w 23 ADR5044ARTZ-REEL1 ADR5041AKSZ-REEL1 SC70SOT-23
    Text: 精密微功耗、分流模式 基准电压源 ADR5040/ADR5041/ADR5043/ADR5044/ADR5045 特性 引脚配置 超紧凑SC70和SOT-23封装 低温度系数:75 ppm/°C(最大值) 与LM4040/LM4050引脚兼容 初始精度:±0.1% 无需外部电容 宽工作电流范围:50 µA至15 mA


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    PDF ADR5040/ADR5041/ADR5043/ADR5044/ADR5045 SC70SOT-23 LM4040/LM4050 ADR5040/ADR5041/ ADR5043/ADR5044/ ADR5045 3SC70 3SOT-23 3SOT-23-3 R2w sot23 ADR504x adr5041aksz-r21 r2w 23 ADR5044ARTZ-REEL1 ADR5041AKSZ-REEL1 SC70SOT-23

    Untitled

    Abstract: No abstract text available
    Text: BFR93A Low Noise Silicon Bipolar RF Transistor • For low-noise, high gain broadband amplifiers at collector currents from 2 mA to 30 mA • Pb-free RoHS compliant package • Qualification report according to AEC-Q101 available ESD (Electrostatic discharge) sensitive device, observe handling precaution!


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    PDF BFR93A AEC-Q101

    marking code R2S sot23

    Abstract: No abstract text available
    Text: BFR93A NPN Bipolar RF Transistor • For low-noise, high gain broadband amplifiers at 2 3 collector currents from 2 mA to 30 mA 1 • Pb-free RoHS compliant package • Qualification report according to AEC-Q101 available ESD (Electrostatic discharge) sensitive device, observe handling precaution!


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    PDF BFR93A AEC-Q101 marking code R2S sot23

    BFR93a

    Abstract: No abstract text available
    Text: BFR93A NPN Silicon RF Transistor • For low-noise, high gain broadband amplifiers at collector currents from 2 mA to 30 mA 2 3 • Pb-free RoHS compliant package 1 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFR93A


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    PDF BFR93A BFR93a

    transistor marking R2s

    Abstract: marking code R2S sot23 equivalent transistor of bfr93a marking R2s MARKING CODE 21E SOT23 marking code R2s BFR93A Infineon Technologies transistor 4 ghz R2S sot23 BCW66
    Text: BFR93A NPN Silicon RF Transistor* • For low-noise, high gain broadband amplifiers at collector currents from 2 mA to 30 mA 2 3 • Pb-free RoHS compliant package 1) 1 • Qualified according AEC Q101 * Short term description ESD (Electrostatic discharge) sensitive device, observe handling precaution!


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    PDF BFR93A transistor marking R2s marking code R2S sot23 equivalent transistor of bfr93a marking R2s MARKING CODE 21E SOT23 marking code R2s BFR93A Infineon Technologies transistor 4 ghz R2S sot23 BCW66

    marking R3s

    Abstract: No abstract text available
    Text: BurrĆBrown Products from Texas Instruments OPA861 SBOS338D – AUGUST 2005 – REVISED AUGUST 2006 Wide Bandwidth OPERATIONAL TRANSCONDUCTANCE AMPLIFIER OTA FEATURES DESCRIPTION • • • • • The OPA861 is a versatile monolithic component designed for wide-bandwidth systems, including high


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    PDF OPA861 SBOS338D 80MHz, 95mA/V) OPA861 marking R3s

    CCII APPLICATION

    Abstract: marking R3s SBOU035
    Text: BurrĆBrown Products from Texas Instruments OPA861 SBOS338D – AUGUST 2005 – REVISED AUGUST 2006 Wide Bandwidth OPERATIONAL TRANSCONDUCTANCE AMPLIFIER OTA FEATURES DESCRIPTION • • • • • The OPA861 is a versatile monolithic component designed for wide-bandwidth systems, including high


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    PDF OPA861 SBOS338D 80MHz, 95mA/V) OPA861 CCII APPLICATION marking R3s SBOU035

    Untitled

    Abstract: No abstract text available
    Text: OPA861 www.ti.com SBOS338G – AUGUST 2005 – REVISED MAY 2013 Wide Bandwidth Operational Transconductance Amplifier OTA Check for Samples: OPA861 FEATURES 1 • • • • • Wide Bandwidth (80MHz, Open-Loop, G = +5) High Slew Rate (900V/µs) High Transconductance (95mA/V)


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    PDF OPA861 SBOS338G 80MHz, 95mA/V)

    CCII

    Abstract: OPA861 OPA861ID OPA861IDBVR OPA861IDBVT OPA861IDR ota patents
    Text: OPA861 www.ti.com. SBOS338E – AUGUST 2005 – REVISED AUGUST 2008 Wide Bandwidth OPERATIONAL TRANSCONDUCTANCE


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    PDF OPA861 SBOS338E 80MHz, 95mA/V) CCII OPA861 OPA861ID OPA861IDBVR OPA861IDBVT OPA861IDR ota patents

    ota ic

    Abstract: No abstract text available
    Text: BurrĆBrown Products from Texas Instruments OPA861 SBOS338D – AUGUST 2005 – REVISED AUGUST 2006 Wide Bandwidth OPERATIONAL TRANSCONDUCTANCE AMPLIFIER OTA FEATURES DESCRIPTION • • • • • The OPA861 is a versatile monolithic component designed for wide-bandwidth systems, including high


    Original
    PDF OPA861 SBOS338D 80MHz, 95mA/V) OPA861 ota ic

    Untitled

    Abstract: No abstract text available
    Text: BurrĆBrown Products from Texas Instruments OPA861 SBOS338D – AUGUST 2005 – REVISED AUGUST 2006 Wide Bandwidth OPERATIONAL TRANSCONDUCTANCE AMPLIFIER OTA FEATURES DESCRIPTION • • • • • The OPA861 is a versatile monolithic component designed for wide-bandwidth systems, including high


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    PDF OPA861 SBOS338D 80MHz, 95mA/V) OPA861

    marking 93A

    Abstract: transistor marking code 1325 b 11061
    Text: SIEMENS BFR 93A NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector current from 2mA to 30mA • CECC.type available: CECC 50 002/256 BFR 93A R2s Q62702-F1086 1= B ro il m ESP: Electrostatic discharge sensitive device, observe handling precaution!


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    PDF Q62702-F1086 OT-23 900MHz marking 93A transistor marking code 1325 b 11061

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFR 93A NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector current from 2mA to 30mA • CECC.type available: CECC 50 002/256 ESP: Electrostatic discharge sensitive device, observe handling precaution! Pin Configuration


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    PDF Q62702-F1086 OT-23 G122D45 fl235bà 0122Q IS21l2= 900MHz G1S5047

    L320 transistor

    Abstract: nec transistor k 4145 1. VOUT 2. GND 3. VIN 4. CE 5. VOUT SOT-23-5 RB111c* rohm
    Text: It n n JL Tr EXTERNAL VFM STEP-UP DC/DC CONVERTER CONTROLLER N O .E A -0 4 2 -9 8 0 3 RN5RY202 OUTLINE T he RN5RY202 Series are VFM chopper Control ICs for step-up D C/DC converter with an external power transis­ tor featuring high output voltage accuracy and low supply current by CMOS process. T he RN5RY202 Series ICs


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    PDF RN5RY202 RN5RY202 7744bTG 0QQ4152 L320 transistor nec transistor k 4145 1. VOUT 2. GND 3. VIN 4. CE 5. VOUT SOT-23-5 RB111c* rohm