APEX PA12
Abstract: 24V 500W dc motor speed control circuit diagram circuit diagram of line follower robot PA03 circuit diagram of line follower robot analog super match pair dac 85741 line follower robot PA03-S
Text: APPLYING THE SUPER POWER PA03 APPLICATION NOTE 6 POWER OPERATIONAL AMPLIFIER HTTP://WWW.APEXMICROTECH.COM M I C R O T E C H N O L O G Y C1 1.0nF 800 546-APEX R1A R1B R2A 200K 50K +88V 50K +88V (800) 546-2739 R2B +88V 50K C3 3.3nF +88V R2C 50K +88V DRIVE NODE
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546-APEX
APEX PA12
24V 500W dc motor speed control circuit diagram
circuit diagram of line follower robot
PA03
circuit diagram of line follower robot analog
super match pair
dac 85741
line follower robot
PA03-S
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circuit diagram of line follower robot
Abstract: 500w power amplifier circuit diagram 250w schematic diagram motor control circuit diagram of line follower robot without m 24V 500W dc motor speed control circuit diagram APEX PA12 circuit diagram of line follower robot analog solar inverters schematic diagram schematic diagram Power supply 500w line follower robot
Text: APPLYING THE SUPER POWER PA03 APPLICATION NOTE 6 POWER OPERATIONAL AMPLIFIER HTTP://WWW.APEXMICROTECH.COM M I C R O T E C H N O L O G Y C1 1.0nF 800 546-APEX R1A R1B R2A 200K 50K +88V 50K +88V (800) 546-2739 R2B +88V 50K C3 3.3nF +88V R2C 50K +88V DRIVE NODE
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546-APEX
circuit diagram of line follower robot
500w power amplifier circuit diagram
250w schematic diagram motor control
circuit diagram of line follower robot without m
24V 500W dc motor speed control circuit diagram
APEX PA12
circuit diagram of line follower robot analog
solar inverters schematic diagram
schematic diagram Power supply 500w
line follower robot
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RO3010
Abstract: C14A z14b
Text: MOTOROLA Order this document by MRF374/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF374 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this device
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MRF374/D
MRF374
MRF374/D
RO3010
C14A
z14b
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SST3904
Abstract: 2N3904 Transistors UMT3904 2N3904 equivalent 2N3904 transistor data sheet free download marking CODE r1a transistor R1A 2N3906 MMST3904 MMST3906
Text: UMT3904 / SST3904 / MMST3904 / 2N3904 Transistors NPN General Purpose Transistor UMT3904 / SST3904 / MMST3904 / 2N3904 !External dimensions Units : mm 2.0±0.2 UMT3904 0.9±0.1 1.3±0.1 0.65 0.65 ROHM : UMT3 EIAJ : SC-70 0.2 0.7±0.1 (3) 2.1±0.1 (2) 1.25±0.1
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UMT3904
SST3904
MMST3904
2N3904
UMT3904
SC-70
2N3904 Transistors
2N3904 equivalent
2N3904 transistor data sheet free download
marking CODE r1a
transistor R1A
2N3906
MMST3906
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TPS6420x
Abstract: transistor R1A cff transistor 5 pin TPS64203 TPS75003 r1a transistor CFF RESISTORS
Text: Application Report SLVA210 – August 2005 – Revised October 2005 Using Ceramic Output Capacitors with the TPS6420x and TPS75003 Buck Controllers ABSTRACT This application report explains how to size the feedforward capacitor when using ceramic output capacitors for the TPS6420x and the TPS75003 buck controllers.
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SLVA210
TPS6420x
TPS75003
transistor R1A
cff transistor 5 pin
TPS64203
r1a transistor
CFF RESISTORS
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Untitled
Abstract: No abstract text available
Text: ARCH I V ED BY FREESCALE SEM I CON DU CT OR, I N C. 2 0 0 5 MOTOROLA Order this document by MRF374/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF374 N–Channel Enhancement–Mode Lateral MOSFET ARCHIVED 2005 Designed for broadband commercial and industrial applications with frequencies from 470 – 860 MHz. The high gain and broadband performance of this
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MRF374/D
MRF374
28rola,
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C13B
Abstract: z14b c18a C14A C12A C12B MRF374 RO3010 Z10A RF POWER VERTICAL MOSFET 1000 w
Text: ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 MOTOROLA Order this document by MRF374/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF374 N–Channel Enhancement–Mode Lateral MOSFET ARCHIVED 2005 Designed for broadband commercial and industrial applications with frequencies from 470 – 860 MHz. The high gain and broadband performance of this
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MRF374/D
MRF374
C13B
z14b
c18a
C14A
C12A
C12B
MRF374
RO3010
Z10A
RF POWER VERTICAL MOSFET 1000 w
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transistor R1A 37
Abstract: 5233 mosfet J146 VJ1210y
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF372 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this
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MRF372
transistor R1A 37
5233 mosfet
J146
VJ1210y
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C3B Kemet
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Rev. 8, 12/2004 RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF372 MRF372R5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this
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MRF372
MRF372R5
C3B Kemet
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IR2110
Abstract: AN IR2110 h bridge ir2110 h bridge irf740 driver circuit for MOSFET IR2110 ir2110 circuit IR2110 MOSFET DRIVER IR2110 design IR211x IR2110 application note
Text: Design Tips DT 92-1B Solving Noise Problems In High Power, High Frequency Control IC Driven Power Stages Introduction Stray Inductances The IR2110 high and low side driver Control IC is one of a family of International Rectifier devices which provides a convenient and cost
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92-1B
IR2110
IR2110
AN IR2110
h bridge ir2110
h bridge irf740
driver circuit for MOSFET IR2110
ir2110 circuit
IR2110 MOSFET DRIVER
IR2110 design
IR211x
IR2110 application note
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RO3010
Abstract: j352 transistor j352 bc17a VJ2225Y
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF374A N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this
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MRF374A
RO3010
j352
transistor j352
bc17a
VJ2225Y
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RO3010
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF372 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this
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MRF372
RO3010
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r2 137
Abstract: pkv 3325 PKV 5321 ericsson 800 filter
Text: PKV 3000 I – PKV 5000 I DC/DC Power Modules 1.65 – 3 W PKV 3000 I – PKV 5000 I • Wide input voltage range, 9–36 V, 18–72 V • High efficiency 74–83% typical • Low idling power • Full output power up to +75 °C ambient temperature • Input/Output isolation 1,500 Vdc
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SE-164
r2 137
pkv 3325
PKV 5321
ericsson 800 filter
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SST3904
Abstract: UMT3904 2N3904 Transistors marking CODE r1a 2N3904 2N3906 MMST3904 MMST3906 SST3906 T106
Text: UMT3904 / SST3904 / MMST3904 / 2N3904 Transistors NPN General Purpose Transistor UMT3904 / SST3904 / MMST3904 / 2N3904 zExternal dimensions Unit : mm 2.0±0.2 UMT3904 0.9±0.1 1.3±0.1 0.65 0.65 ROHM : UMT3 EIAJ : SC-70 0.7±0.1 0.2 (3) 2.1±0.1 (2) 1.25±0.1
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UMT3904
SST3904
MMST3904
2N3904
UMT3904
SC-70
2N3904 Transistors
marking CODE r1a
2N3904
2N3906
MMST3906
SST3906
T106
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transmitter 446 mhz
Abstract: R5B transistor J960 470-860 mhz Power amplifier w
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF372 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this device
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MRF372
transmitter 446 mhz
R5B transistor
J960
470-860 mhz Power amplifier w
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MRF374A
Abstract: marking c14a l1a marking
Text: Freescale Semiconductor Technical Data Rev. 4, 12/2004 RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF374A Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this
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MRF374A
marking c14a
l1a marking
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RO3010
Abstract: RF POWER VERTICAL MOSFET
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF374A N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this
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MRF374
MRF374A
RO3010
RF POWER VERTICAL MOSFET
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SST3904
Abstract: UMT3904 2N3904 Transistors 2n3906 hie 2N3904 2N3906 MMST3904 MMST3906 SST3906 T106
Text: UMT3904 / SST3904 / MMST3904 / 2N3904 Transistors NPN General Purpose Transistor UMT3904 / SST3904 / MMST3904 / 2N3904 !External dimensions Units : mm 2.0±0.2 UMT3904 0.9±0.1 1.3±0.1 0.65 0.65 ROHM : UMT3 EIAJ : SC-70 0.2 0.7±0.1 (3) 2.1±0.1 (2) 1.25±0.1
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UMT3904
SST3904
MMST3904
2N3904
UMT3904
SC-70
2N3904 Transistors
2n3906 hie
2N3904
2N3906
MMST3906
SST3906
T106
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Untitled
Abstract: No abstract text available
Text: UMT3904 / SST3904 / MMST3904 Transistors NPN General Purpose Transistor UMT3904 / SST3904 / MMST3904 Features 1 BVCEO > 40V IC = 1mA) 2) Complements the UMT3906 / SST3906 / MMST3906. Dimensions (Unit : mm) UMT3904 (1) Emitter (2) Base (3) Collector ROHM : UMT3
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UMT3904
SST3904
MMST3904
UMT3906
SST3906
MMST3906.
UMT3904
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SST3904
Abstract: UMT3904 marking CODE r1a transistor R1A marking "3D 0D" MMST3904 MMST3906 SST3906 T106 T116
Text: UMT3904 / SST3904 / MMST3904 Transistors NPN General Purpose Transistor UMT3904 / SST3904 / MMST3904 zFeatures 1 BVCEO > 40V IC = 1mA) 2) Complements the UMT3906 / SST3906 / MMST3906. zDimensions (Unit : mm) UMT3904 (1) Emitter (2) Base (3) Collector ROHM : UMT3
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UMT3904
SST3904
MMST3904
UMT3906
SST3906
MMST3906.
UMT3904
marking CODE r1a
transistor R1A
marking "3D 0D"
MMST3904
MMST3906
T106
T116
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EB206
Abstract: D1A diode Nippon capacitors inductances
Text: MOTOROLA Order this document by EB206/D SEMICONDUCTOR ENGINEERING BULLETIN EB206 Solving Noise Problems in High Power, High Frequency Control IC Driven Power Stages Prepared by: Larry Baxter INTRODUCTION The MPIC2113 high & low side driver Control IC is one of
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EB206/D
EB206
MPIC2113
MPIC2113
EB206/D*
EB206/D
D1A diode
Nippon capacitors
inductances
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transistor c37
Abstract: R1A SURFACE MOUNT TRANSISTOR transistor R1A r1a transistor R1A Marking npn transistor R1A 37 KH SOT23
Text: Die no. C-37 NPN small signal transistor These epitaxial planar NPN silicon transistors are gold doped. Dimensions Units : mm SST3 Features • l.9 ± 0 .2 available in the following packages: 0 .4 5 ± 0.1 0 .9 5 0.9S — SST3 (SST, SOT-23) D — SMT3 (SMT, SC-59)
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OT-23)
SC-59)
OT-323)
transistor c37
R1A SURFACE MOUNT TRANSISTOR
transistor R1A
r1a transistor
R1A Marking npn
transistor R1A 37
KH SOT23
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lm 3904
Abstract: 2N3904 T T3904 SST3904 ST3904 2n390 2N3904TA UMT3904 RXT3904 2N3904
Text: Transistors I NPN General Purpose Transistor UMT3904/SST3904/MMST3904/RXT3904/2N3904 •F eatures •External dimensions Units : mm 1 ) B V ceo < 4 0 V (lo— 1mA) 2 ) Com plem ents the UM T3906/SST3906/M M ST3906/RXT3906/PN 3906 •Package, marking and packaging specifications
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T3906/SST3906/M
ST3906/RXT3906/PN
UMT3904/SST3904/MMST3904/RXT3904/2N3904
T3904
ST3904
RXT3904
T3904,
UMT3904
SST3904
MMST3904
lm 3904
2N3904 T
2n390
2N3904TA
2N3904
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rkm 33 transistor
Abstract: bkd transistor DTD133HKA BKD C6 DTB133HKA Transistor BJD 2SA1885 rkm 20 transistor 2SC5274 rkm transistor
Text: Transistors Abbreviated label symbols on mini molded type Abbreviated label symbols on mini molded type •E M T 3 and UMT3 labels On general transistors, the product and hpE rank are in dicated by 2 or 3 letters. On digital transistors, the product type is indicated by a 2-digit number.
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FMA10A
FMA11A
IMB10A
IMB11A
IMB16
IMB17A
IMD10A
IMD14
IMD16A
IMH10A
rkm 33 transistor
bkd transistor
DTD133HKA
BKD C6
DTB133HKA
Transistor BJD
2SA1885
rkm 20 transistor
2SC5274
rkm transistor
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