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    R1A TRANSISTOR Search Results

    R1A TRANSISTOR Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    R1A TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    APEX PA12

    Abstract: 24V 500W dc motor speed control circuit diagram circuit diagram of line follower robot PA03 circuit diagram of line follower robot analog super match pair dac 85741 line follower robot PA03-S
    Text: APPLYING THE SUPER POWER PA03 APPLICATION NOTE 6 POWER OPERATIONAL AMPLIFIER HTTP://WWW.APEXMICROTECH.COM M I C R O T E C H N O L O G Y C1 1.0nF 800 546-APEX R1A R1B R2A 200K 50K +88V 50K +88V (800) 546-2739 R2B +88V 50K C3 3.3nF +88V R2C 50K +88V DRIVE NODE


    Original     		PDF 546-APEX APEX PA12 24V 500W dc motor speed control circuit diagram circuit diagram of line follower robot PA03 circuit diagram of line follower robot analog super match pair dac 85741 line follower robot PA03-S

    circuit diagram of line follower robot

    Abstract: 500w power amplifier circuit diagram 250w schematic diagram motor control circuit diagram of line follower robot without m 24V 500W dc motor speed control circuit diagram APEX PA12 circuit diagram of line follower robot analog solar inverters schematic diagram schematic diagram Power supply 500w line follower robot
    Text: APPLYING THE SUPER POWER PA03 APPLICATION NOTE 6 POWER OPERATIONAL AMPLIFIER HTTP://WWW.APEXMICROTECH.COM M I C R O T E C H N O L O G Y C1 1.0nF 800 546-APEX R1A R1B R2A 200K 50K +88V 50K +88V (800) 546-2739 R2B +88V 50K C3 3.3nF +88V R2C 50K +88V DRIVE NODE


    Original     		PDF 546-APEX circuit diagram of line follower robot 500w power amplifier circuit diagram 250w schematic diagram motor control circuit diagram of line follower robot without m 24V 500W dc motor speed control circuit diagram APEX PA12 circuit diagram of line follower robot analog solar inverters schematic diagram schematic diagram Power supply 500w line follower robot

    RO3010

    Abstract: C14A z14b
    Text: MOTOROLA Order this document by MRF374/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF374 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this device


    Original     		PDF MRF374/D MRF374 MRF374/D RO3010 C14A z14b

    SST3904

    Abstract: 2N3904 Transistors UMT3904 2N3904 equivalent 2N3904 transistor data sheet free download marking CODE r1a transistor R1A 2N3906 MMST3904 MMST3906
    Text: UMT3904 / SST3904 / MMST3904 / 2N3904 Transistors NPN General Purpose Transistor UMT3904 / SST3904 / MMST3904 / 2N3904 !External dimensions Units : mm 2.0±0.2 UMT3904 0.9±0.1 1.3±0.1 0.65 0.65 ROHM : UMT3 EIAJ : SC-70 0.2 0.7±0.1 (3) 2.1±0.1 (2) 1.25±0.1


    Original     		PDF UMT3904 SST3904 MMST3904 2N3904 UMT3904 SC-70 2N3904 Transistors 2N3904 equivalent 2N3904 transistor data sheet free download marking CODE r1a transistor R1A 2N3906 MMST3906

    TPS6420x

    Abstract: transistor R1A cff transistor 5 pin TPS64203 TPS75003 r1a transistor CFF RESISTORS
    Text: Application Report SLVA210 – August 2005 – Revised October 2005 Using Ceramic Output Capacitors with the TPS6420x and TPS75003 Buck Controllers ABSTRACT This application report explains how to size the feedforward capacitor when using ceramic output capacitors for the TPS6420x and the TPS75003 buck controllers.


    Original     		PDF SLVA210 TPS6420x TPS75003 transistor R1A cff transistor 5 pin TPS64203 r1a transistor CFF RESISTORS

    Untitled

    Abstract: No abstract text available
    Text: ARCH I V ED BY FREESCALE SEM I CON DU CT OR, I N C. 2 0 0 5 MOTOROLA Order this document by MRF374/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF374 N–Channel Enhancement–Mode Lateral MOSFET ARCHIVED 2005 Designed for broadband commercial and industrial applications with frequencies from 470 – 860 MHz. The high gain and broadband performance of this


    Original     		PDF MRF374/D MRF374 28rola,

    C13B

    Abstract: z14b c18a C14A C12A C12B MRF374 RO3010 Z10A RF POWER VERTICAL MOSFET 1000 w
    Text: ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 MOTOROLA Order this document by MRF374/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF374 N–Channel Enhancement–Mode Lateral MOSFET ARCHIVED 2005 Designed for broadband commercial and industrial applications with frequencies from 470 – 860 MHz. The high gain and broadband performance of this


    Original     		PDF MRF374/D MRF374 C13B z14b c18a C14A C12A C12B MRF374 RO3010 Z10A RF POWER VERTICAL MOSFET 1000 w

    transistor R1A 37

    Abstract: 5233 mosfet J146 VJ1210y
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF372 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this


    Original     		PDF MRF372 transistor R1A 37 5233 mosfet J146 VJ1210y

    C3B Kemet

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Rev. 8, 12/2004 RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF372 MRF372R5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this


    Original     		PDF MRF372 MRF372R5 C3B Kemet

    IR2110

    Abstract: AN IR2110 h bridge ir2110 h bridge irf740 driver circuit for MOSFET IR2110 ir2110 circuit IR2110 MOSFET DRIVER IR2110 design IR211x IR2110 application note
    Text: Design Tips DT 92-1B Solving Noise Problems In High Power, High Frequency Control IC Driven Power Stages Introduction Stray Inductances The IR2110 high and low side driver Control IC is one of a family of International Rectifier devices which provides a convenient and cost


    Original     		PDF 92-1B IR2110 IR2110 AN IR2110 h bridge ir2110 h bridge irf740 driver circuit for MOSFET IR2110 ir2110 circuit IR2110 MOSFET DRIVER IR2110 design IR211x IR2110 application note

    RO3010

    Abstract: j352 transistor j352 bc17a VJ2225Y
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF374A N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this


    Original     		PDF MRF374A RO3010 j352 transistor j352 bc17a VJ2225Y

    RO3010

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF372 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this


    Original     		PDF MRF372 RO3010

    r2 137

    Abstract: pkv 3325 PKV 5321 ericsson 800 filter
    Text: PKV 3000 I – PKV 5000 I DC/DC Power Modules 1.65 – 3 W PKV 3000 I – PKV 5000 I • Wide input voltage range, 9–36 V, 18–72 V • High efficiency 74–83% typical • Low idling power • Full output power up to +75 °C ambient temperature • Input/Output isolation 1,500 Vdc


    Original     		PDF SE-164 r2 137 pkv 3325 PKV 5321 ericsson 800 filter

    SST3904

    Abstract: UMT3904 2N3904 Transistors marking CODE r1a 2N3904 2N3906 MMST3904 MMST3906 SST3906 T106
    Text: UMT3904 / SST3904 / MMST3904 / 2N3904 Transistors NPN General Purpose Transistor UMT3904 / SST3904 / MMST3904 / 2N3904 zExternal dimensions Unit : mm 2.0±0.2 UMT3904 0.9±0.1 1.3±0.1 0.65 0.65 ROHM : UMT3 EIAJ : SC-70 0.7±0.1 0.2 (3) 2.1±0.1 (2) 1.25±0.1


    Original     		PDF UMT3904 SST3904 MMST3904 2N3904 UMT3904 SC-70 2N3904 Transistors marking CODE r1a 2N3904 2N3906 MMST3906 SST3906 T106

    transmitter 446 mhz

    Abstract: R5B transistor J960 470-860 mhz Power amplifier w
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF372 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this device


    Original     		PDF MRF372 transmitter 446 mhz R5B transistor J960 470-860 mhz Power amplifier w

    MRF374A

    Abstract: marking c14a l1a marking
    Text: Freescale Semiconductor Technical Data Rev. 4, 12/2004 RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF374A Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this


    Original     		PDF MRF374A marking c14a l1a marking

    RO3010

    Abstract: RF POWER VERTICAL MOSFET
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF374A N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this


    Original     		PDF MRF374 MRF374A RO3010 RF POWER VERTICAL MOSFET

    SST3904

    Abstract: UMT3904 2N3904 Transistors 2n3906 hie 2N3904 2N3906 MMST3904 MMST3906 SST3906 T106
    Text: UMT3904 / SST3904 / MMST3904 / 2N3904 Transistors NPN General Purpose Transistor UMT3904 / SST3904 / MMST3904 / 2N3904 !External dimensions Units : mm 2.0±0.2 UMT3904 0.9±0.1 1.3±0.1 0.65 0.65 ROHM : UMT3 EIAJ : SC-70 0.2 0.7±0.1 (3) 2.1±0.1 (2) 1.25±0.1


    Original     		PDF UMT3904 SST3904 MMST3904 2N3904 UMT3904 SC-70 2N3904 Transistors 2n3906 hie 2N3904 2N3906 MMST3906 SST3906 T106

    Untitled

    Abstract: No abstract text available
    Text: UMT3904 / SST3904 / MMST3904 Transistors NPN General Purpose Transistor UMT3904 / SST3904 / MMST3904 Features 1 BVCEO > 40V IC = 1mA) 2) Complements the UMT3906 / SST3906 / MMST3906. Dimensions (Unit : mm) UMT3904 (1) Emitter (2) Base (3) Collector ROHM : UMT3


    Original     		PDF UMT3904 SST3904 MMST3904 UMT3906 SST3906 MMST3906. UMT3904

    SST3904

    Abstract: UMT3904 marking CODE r1a transistor R1A marking "3D 0D" MMST3904 MMST3906 SST3906 T106 T116
    Text: UMT3904 / SST3904 / MMST3904 Transistors NPN General Purpose Transistor UMT3904 / SST3904 / MMST3904 zFeatures 1 BVCEO > 40V IC = 1mA) 2) Complements the UMT3906 / SST3906 / MMST3906. zDimensions (Unit : mm) UMT3904 (1) Emitter (2) Base (3) Collector ROHM : UMT3


    Original     		PDF UMT3904 SST3904 MMST3904 UMT3906 SST3906 MMST3906. UMT3904 marking CODE r1a transistor R1A marking "3D 0D" MMST3904 MMST3906 T106 T116

    EB206

    Abstract: D1A diode Nippon capacitors inductances
    Text: MOTOROLA Order this document by EB206/D SEMICONDUCTOR ENGINEERING BULLETIN EB206 Solving Noise Problems in High Power, High Frequency Control IC Driven Power Stages Prepared by: Larry Baxter INTRODUCTION The MPIC2113 high & low side driver Control IC is one of


    Original     		PDF EB206/D EB206 MPIC2113 MPIC2113 EB206/D* EB206/D D1A diode Nippon capacitors inductances

    transistor c37

    Abstract: R1A SURFACE MOUNT TRANSISTOR transistor R1A r1a transistor R1A Marking npn transistor R1A 37 KH SOT23
    Text: Die no. C-37 NPN small signal transistor These epitaxial planar NPN silicon transistors are gold doped. Dimensions Units : mm SST3 Features • l.9 ± 0 .2 available in the following packages: 0 .4 5 ± 0.1 0 .9 5 0.9S — SST3 (SST, SOT-23) D — SMT3 (SMT, SC-59)


    OCR Scan     		PDF OT-23) SC-59) OT-323) transistor c37 R1A SURFACE MOUNT TRANSISTOR transistor R1A r1a transistor R1A Marking npn transistor R1A 37 KH SOT23

    lm 3904

    Abstract: 2N3904 T T3904 SST3904 ST3904 2n390 2N3904TA UMT3904 RXT3904 2N3904
    Text: Transistors I NPN General Purpose Transistor UMT3904/SST3904/MMST3904/RXT3904/2N3904 •F eatures •External dimensions Units : mm 1 ) B V ceo < 4 0 V (lo— 1mA) 2 ) Com plem ents the UM T3906/SST3906/M M ST3906/RXT3906/PN 3906 •Package, marking and packaging specifications


    OCR Scan     		PDF T3906/SST3906/M ST3906/RXT3906/PN UMT3904/SST3904/MMST3904/RXT3904/2N3904 T3904 ST3904 RXT3904 T3904, UMT3904 SST3904 MMST3904 lm 3904 2N3904 T 2n390 2N3904TA 2N3904

    rkm 33 transistor

    Abstract: bkd transistor DTD133HKA BKD C6 DTB133HKA Transistor BJD 2SA1885 rkm 20 transistor 2SC5274 rkm transistor
    Text: Transistors Abbreviated label symbols on mini molded type Abbreviated label symbols on mini molded type •E M T 3 and UMT3 labels On general transistors, the product and hpE rank are in­ dicated by 2 or 3 letters. On digital transistors, the product type is indicated by a 2-digit number.


    OCR Scan     		PDF FMA10A FMA11A IMB10A IMB11A IMB16 IMB17A IMD10A IMD14 IMD16A IMH10A rkm 33 transistor bkd transistor DTD133HKA BKD C6 DTB133HKA Transistor BJD 2SA1885 rkm 20 transistor 2SC5274 rkm transistor