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    MultiDemension Technology Co Ltd TMR1102S

    TMR SENSOR MAG SW UNI 17G 1.5UA
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    R1102S Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SCS206AM

    Abstract: No abstract text available
    Text: SCS206AM Datasheet SiC Schottky Barrier Diode Outline VR 600V IF 6A QC 9nC TO-220FM 2 (1) Inner circuit Features 1) Shorter recovery time 2) Reduced temperature dependence (1) Cathode (2) Anode 3) High-speed switching possible (1) (2) Packaging specifications


    Original     		PDF SCS206AM O-220FM R1102S SCS206AM

    Untitled

    Abstract: No abstract text available
    Text: SCS212AM Datasheet SiC Schottky Barrier Diode Outline VR 600V IF 12A QC 18nC TO-220FM 2 (1) Inner circuit Features 1) Shorter recovery time 2) Reduced temperature dependence (1) Cathode (2) Anode 3) High-speed switching possible (1) (2) Packaging specifications


    Original     		PDF SCS212AM O-220FM R1102S

    scs206

    Abstract: SCS206AJ
    Text: SCS206AJ SiC Schottky Barrier Diode Datasheet Outline VR 600V IF 6A QC 9nC LPT L <TO-263AB> (1) (2) (3) (4) Features Inner circuit (1) 1) Shorter recovery time 2) Reduced temperature dependence (1) Cathode (2) N / C (3) Cathode (4) Anode 3) High-speed switching possible


    Original     		PDF SCS206AJ O-263AB> R1102S scs206 SCS206AJ

    SCS208AG

    Abstract: marking CODE 56 ROHM
    Text: SCS208AG Datasheet SiC Schottky Barrier Diode lOutline VR 600V IF 8A QC 13nC TO-220AC 1 (2) lFeatures (3) lInner circuit (1) 1) Shorter recovery time 2) Reduced temperature dependence (1) Cathode (2) Cathode (3) Anode 3) High-speed switching possible (2)


    Original     		PDF SCS208AG O-220AC 25iance R1102S SCS208AG marking CODE 56 ROHM

    SCS210

    Abstract: do Marking rohm Rohm
    Text: SCS210AM Datasheet SiC Schottky Barrier Diode lOutline VR 600V IF 10A QC 15nC TO-220FM 2 (1) lFeatures lInner circuit 1) Shorter recovery time 2) Reduced temperature dependence (1) Cathode (2) Anode 3) High-speed switching possible (1) (2) lPackaging specifications


    Original     		PDF SCS210AM O-220FM R1102S SCS210 do Marking rohm Rohm

    ROHM marking

    Abstract: No abstract text available
    Text: SCS208AJ SiC Schottky Barrier Diode Datasheet Outline VR 600V IF 8A QC 13nC LPT L <TO-263AB> (1) (2) (3) (4) Features Inner circuit (1) 1) Shorter recovery time 2) Reduced temperature dependence (1) Cathode (2) N / C (3) Cathode (4) Anode 3) High-speed switching possible


    Original     		PDF SCS208AJ O-263AB> R1102S ROHM marking

    25Forward

    Abstract: No abstract text available
    Text: SCS212AM Datasheet SiC Schottky Barrier Diode Outline VR 600V IF 12A QC 18nC TO-220FM 2 (1) Inner circuit Features 1) Shorter recovery time 2) Reduced temperature dependence (1) Cathode (2) Anode 3) High-speed switching possible (1) (2) Packaging specifications


    Original     		PDF SCS212AM O-220FM R1102S 25Forward

    Untitled

    Abstract: No abstract text available
    Text: SCS206AJ Datasheet SiC Schottky Barrier Diode Outline VR 600V IF 6A QC 9nC LPT L <TO-263AB> (1) (2) (3) (4) Inner circuit Features (1) 1) Shorter recovery time 2) Reduced temperature dependence (1) Cathode (2) N / C (3) Cathode (4) Anode 3) High-speed switching possible


    Original     		PDF SCS206AJ O-263AB> R1102S

    dc/tx/1/2/PS/SCT2080KE

    Abstract: No abstract text available
    Text: SCT2080KE Datasheet N-channel SiC power MOSFET Outline VDSS 1200V RDS on (Typ.) 80m ID 35A PD 179W Features TO-247 (1) (2) (3) Inner circuit (2) 1) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery *1 (1) (1) Gate (2) Drain (3) Source


    Original     		PDF SCT2080KE O-247 R1102S dc/tx/1/2/PS/SCT2080KE

    Untitled

    Abstract: No abstract text available
    Text: SCS220AG SiC Schottky Barrier Diode Datasheet lOutline VR 600V IF 20A QC 31nC TO-220AC 1 (2) lFeatures (3) lInner circuit 1) Shorter recovery time (1) 2) Reduced temperature dependence (1) Cathode (2) Cathode (3) Anode 3) High-speed switching possible (2)


    Original     		PDF SCS220AG O-220AC R1102S

    Untitled

    Abstract: No abstract text available
    Text: SCS210AM SiC Schottky Barrier Diode Datasheet lOutline VR 600V IF 10A QC 15nC TO-220FM 2 (1) lFeatures lInner circuit 1) Shorter recovery time 2) Reduced temperature dependence (1) Cathode (2) Anode 3) High-speed switching possible (1) (2) lPackaging specifications


    Original     		PDF SCS210AM O-220FM R1102S

    Untitled

    Abstract: No abstract text available
    Text: SCS208AM Datasheet SiC Schottky Barrier Diode Outline VR 600V IF 8A QC 13nC TO-220FM 2 (1) Inner circuit Features 1) Shorter recovery time 2) Reduced temperature dependence (1) Cathode (2) Anode 3) High-speed switching possible (1) (2) Packaging specifications


    Original     		PDF SCS208AM O-220FM R1102S

    Untitled

    Abstract: No abstract text available
    Text: SCS120KG Datasheet SiC Schottky Barrier Diode Outline VR 1200V IF 20A QC 70nC 1 TO-220AC (2) (3) Inner circuit Features (1) 1) Shorter recovery time 2) Reduced temperature dependence (1) Cathode (2) Cathode (3) Anode 3) High-speed switching possible


    Original     		PDF SCS120KG O-220AC R1102S

    SCS208AJ

    Abstract: No abstract text available
    Text: SCS208AJ Datasheet SiC Schottky Barrier Diode Outline VR 600V IF 8A QC 13nC LPT L <TO-263AB> (1) (2) (3) (4) Inner circuit Features (1) 1) Shorter recovery time 2) Reduced temperature dependence (1) Cathode (2) N / C (3) Cathode (4) Anode 3) High-speed switching possible


    Original     		PDF SCS208AJ O-263AB> R1102S SCS208AJ

    SiC POWER MOSFET

    Abstract: SCT2080 MOSFET 1200V ROHM
    Text: SCT2080KE Datasheet N-channel SiC power MOSFET Outline VDSS 1200V RDS on (Typ.) 80m ID 35A PD 179W TO-247 (1) (2) (3) Inner circuit Features 1) Low on-resistance (2) 2) Fast switching speed 3) Fast reverse recovery *1 (1) Gate (2) Drain (3) Source


    Original     		PDF SCT2080KE O-247 SCT2080KE R1102S SiC POWER MOSFET SCT2080 MOSFET 1200V ROHM

    Untitled

    Abstract: No abstract text available
    Text: SCH2080KE Datasheet N-channel SiC power MOSFET co-packaged with SiC-SBD Outline VDSS 1200V RDS on (Typ.) 80m ID 35A PD 179W Features TO-247 Inner circuit 1) Low on-resistance D(2) (1) Gate (2) Drain (3) Source 2) Fast switching speed 3) Fast reverse recovery


    Original     		PDF SCH2080KE O-247 R1102S

    Untitled

    Abstract: No abstract text available
    Text: SCS212AG SiC Schottky Barrier Diode Datasheet lOutline VR 600V IF 12A QC 18nC TO-220AC 1 (2) lFeatures (3) lInner circuit 1) Shorter recovery time (1) 2) Reduced temperature dependence (1) Cathode (2) Cathode (3) Anode 3) High-speed switching possible (2)


    Original     		PDF SCS212AG O-220AC R1102S

    SCS210AG

    Abstract: No abstract text available
    Text: SCS210AG Datasheet SiC Schottky Barrier Diode lOutline VR 600V IF 10A QC 15nC TO-220AC 1 (2) lFeatures (3) lInner circuit (1) 1) Shorter recovery time 2) Reduced temperature dependence (1) Cathode (2) Cathode (3) Anode 3) High-speed switching possible (2)


    Original     		PDF SCS210AG O-220AC R1102S SCS210AG

    SCH2080KE

    Abstract: No abstract text available
    Text: SCH2080KE Datasheet N-channel SiC power MOSFET co-packaged with SiC-SBD Outline VDSS 1200V RDS on (Typ.) 80m ID 35A PD 179W TO-247 Inner circuit Features 1) Low on-resistance D(2) (1) Gate (2) Drain (3) Source 2) Fast switching speed 3) Fast reverse recovery


    Original     		PDF SCH2080KE O-247 R1102S SCH2080KE

    rohm ordering information

    Abstract: No abstract text available
    Text: SCS208AM Datasheet SiC Schottky Barrier Diode Outline VR 600V IF 8A QC 13nC TO-220FM 2 (1) Inner circuit Features 1) Shorter recovery time 2) Reduced temperature dependence (1) Cathode (2) Anode 3) High-speed switching possible (1) (2) Packaging specifications


    Original     		PDF SCS208AM O-220FM R1102S rohm ordering information

    Untitled

    Abstract: No abstract text available
    Text: SCS208AG SiC Schottky Barrier Diode Datasheet lOutline VR 600V IF 8A QC 13nC TO-220AC 1 (2) lFeatures (3) lInner circuit 1) Shorter recovery time (1) 2) Reduced temperature dependence (1) Cathode (2) Cathode (3) Anode 3) High-speed switching possible (2)


    Original     		PDF SCS208AG O-220AC R1102S

    SCS220AE

    Abstract: No abstract text available
    Text: SCS220AE2 SiC Schottky Barrier Diode Datasheet lOutline VR 600V IF 10A/20A* QC 15nC TO-247 * Per leg / Both legs (1) (2) lFeatures (3) lInner circuit 1) Shorter recovery time 2) Reduced temperature dependence (1) Anode (2) Cathode (3) Anode 3) High-speed switching possible


    Original     		PDF SCS220AE2 0A/20A* O-247 R1102S SCS220AE

    SCS210AG

    Abstract: No abstract text available
    Text: SCS210AG SiC Schottky Barrier Diode Datasheet lOutline VR 600V IF 10A QC 15nC TO-220AC 1 (2) lFeatures (3) lInner circuit 1) Shorter recovery time (1) 2) Reduced temperature dependence (1) Cathode (2) Cathode (3) Anode 3) High-speed switching possible (2)


    Original     		PDF SCS210AG O-220AC R1102S SCS210AG

    Untitled

    Abstract: No abstract text available
    Text: SCS206AG SiC Schottky Barrier Diode Datasheet lOutline VR 600V IF 6A QC 9nC TO-220AC 1 (2) lFeatures (3) lInner circuit 1) Shorter recovery time (1) 2) Reduced temperature dependence (1) Cathode (2) Cathode (3) Anode 3) High-speed switching possible (2)


    Original     		PDF SCS206AG O-220AC R1102S