Untitled
Abstract: No abstract text available
Text: SCT2450KE N-channel SiC power MOSFET Datasheet lOutline VDSS 1200V RDS on (Typ.) 450mW ID 10A PD 85W TO-247 (1) (2) (3) lInner circuit lFeatures (1) Gate (2) Drain (3) Source 1) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery *1 Body Diode
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SCT2450KE
450mW
O-247
R1102B
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Untitled
Abstract: No abstract text available
Text: SCS230AE2 SiC Schottky Barrier Diode Datasheet lOutline VR 650V IF 15A/30A* QC 23nC TO-247 * Per leg / Both legs (1) (2) lFeatures (3) lInner circuit 1) Shorter recovery time 2) Reduced temperature dependence (1) Anode (2) Cathode (3) Anode 3) High-speed switching possible
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SCS230AE2
5A/30A*
O-247
R1102B
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Untitled
Abstract: No abstract text available
Text: SCT2160KE N-channel SiC power MOSFET Datasheet lOutline VDSS 1200V RDS on (Typ.) 160mW ID 22A PD 165W TO-247 (1) (2) (3) lInner circuit lFeatures (1) Gate (2) Drain (3) Source 1) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery *1 Body Diode
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SCT2160KE
160mW
O-247
R1102B
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Untitled
Abstract: No abstract text available
Text: SiC Power Module Datasheet BSM120D12P2C005 lApplication lCircuit diagram Moter drive 1 Inverter, Converter Photovoltaics, wind power generation. 10 9 8 N.C Induction heating equipment. 3,4 5 6 7(N.C) lFeatures 2 1) Low surge, low switching loss.
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BSM120D12P2C005
R1102B
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Untitled
Abstract: No abstract text available
Text: SCT2080KE Datasheet N-channel SiC power MOSFET Outline VDSS 1200V RDS on (Typ.) 80m ID 40A PD 262W Features TO-247 Inner circuit 1) Low on-resistance (2) 2) Fast switching speed 3) Fast reverse recovery *1 (1) Gate (2) Drain (3) Source (1) 4) Easy to parallel
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SCT2080KE
O-247
R1102B
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Untitled
Abstract: No abstract text available
Text: SCS110KG SiC Schottky Barrier Diode Datasheet lOutline VR 1200V IF 10A QC 34nC TO-220AC 1 (2) lFeatures (3) lInner circuit (1) 1) Shorter recovery time 2) Reduced temperature dependence (1) Cathode (2) Cathode (3) Anode 3) High-speed switching possible (2)
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SCS110KG
O-220AC
R1102B
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Untitled
Abstract: No abstract text available
Text: SCS220AM SiC Schottky Barrier Diode Datasheet Outline VR 600V IF 20A QC 31nC TO-220FM 2 (1) Features Inner circuit 1) Shorter recovery time 2) Reduced temperature dependence (1) Cathode (2) Anode 3) High-speed switching possible (1) (2) Packaging specifications
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SCS220AM
O-220FM
R1102B
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Untitled
Abstract: No abstract text available
Text: SCTMU001F Data Sheet N-channel SiC power MOSFET lOutline VDSS 400V RDS on (Typ.) 120mW ID 20A PD 132W TO220AB (1) (2) (3) lFeatures lInner circuit 1) Low on-resistance (1) Gate (2) Drain (3) Source 2) Fast switching speed 3) Fast reverse recovery 4) Easy to parallel
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SCTMU001F
120mW
O220AB
R1102B
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Untitled
Abstract: No abstract text available
Text: S2305 Data Sheet N-channel SiC power MOSFET bare die VDSS 1200V RDS on (Typ.) 450mW ID 10A*1 lFeatures lInner circuit (D) 1) Low on-resistance (G) Gate (D) Drain (S) Source 2) Fast switching speed 3) Fast reverse recovery (G) 4) Easy to parallel *1 Body Diode
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S2305
450mW
R1102B
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Untitled
Abstract: No abstract text available
Text: S2301 Data Sheet N-channel SiC power MOSFET bare die VDSS 1200V RDS on (Typ.) 80mW ID 40A*1 lFeatures lInner circuit (D) 1) Low on-resistance (G) Gate (D) Drain (S) Source 2) Fast switching speed 3) Fast reverse recovery (G) 4) Easy to parallel *1 Body Diode
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S2301
R1102B
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Untitled
Abstract: No abstract text available
Text: S6204 Data Sheet SiC Schottky Barrier Diode Bare Die VR 650V IF 8A*1 13nC QC lFeatures lInner circuit C 1) Shorter recovery time 2) Reduced temperature dependence (C) Cathode (A) Anode 3) High-speed switching possible (A) lConstruction Silicon carbide epitaxial planer type
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S6204
R1102B
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Untitled
Abstract: No abstract text available
Text: SCS210KG Datasheet SiC Schottky Barrier Diode Outline VR 1200V IF 10A QC 34nC TO-220AC 1 (2) (3) Inner circuit Features (1) 1) Shorter recovery time 2) Reduced temperature dependence (1) Cathode (2) Cathode (3) Anode 3) High-speed switching possible
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SCS210KG
O-220AC
R1102B
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Untitled
Abstract: No abstract text available
Text: SCS110KG SiC Schottky Barrier Diode Datasheet lOutline VR 1200V IF 10A QC 34nC TO-220AC 1 (2) lFeatures (3) lInner circuit (1) 1) Shorter recovery time 2) Reduced temperature dependence (1) Cathode (2) Cathode (3) Anode 3) High-speed switching possible (2)
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SCS110KG
O-220AC
R1102B
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650v 10a
Abstract: SCS210AJ
Text: SCS210AJ Datasheet SiC Schottky Barrier Diode lOutline VR 650V IF 10A QC 15nC LPT L <TO-263AB> (1) (2) (3) (4) lFeatures lInner circuit (1) 1) Shorter recovery time 2) Reduced temperature dependence (1) Cathode (2) N / C (3) Cathode (4) Anode 3) High-speed switching possible
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SCS210AJ
O-263AB>
R1102B
650v 10a
SCS210AJ
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scs206
Abstract: No abstract text available
Text: SCS206AG Datasheet SiC Schottky Barrier Diode lOutline VR 650V IF 6A QC 9nC TO-220AC 1 (2) lFeatures (3) lInner circuit (1) 1) Shorter recovery time 2) Reduced temperature dependence (1) Cathode (2) Cathode (3) Anode 3) High-speed switching possible (2)
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SCS206AG
O-220AC
R1102B
scs206
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Untitled
Abstract: No abstract text available
Text: SCT2080KE N-channel SiC power MOSFET Data Sheet lOutline VDSS 1200V RDS on (Typ.) 80mW ID 40A PD 262W lFeatures TO-247 lInner circuit 1) Low on-resistance (1) Gate (2) Drain (3) Source 2) Fast switching speed 3) Fast reverse recovery 4) Easy to parallel *1 Body Diode
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SCT2080KE
O-247
R1102B
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Untitled
Abstract: No abstract text available
Text: SiC Power Module BSM180D12P2C101 Datasheet lApplication lCircuit diagram Motor drive 1 Inverter, Converter Photovoltaics, wind power generation. 10 9 8 N.C Induction heating equipment. 3,4 5 6 7(N.C) lFeatures 2 1) Low surge, low switching loss.
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BSM180D12P2C101
R1102B
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Untitled
Abstract: No abstract text available
Text: SCT2450KE Datasheet N-channel SiC power MOSFET Outline VDSS 1200V RDS on (Typ.) 450m ID 10A PD 85W TO-247 (1) (2) (3) Inner circuit (2) Features (1) Gate (2) Drain (3) Source 1) Low on-resistance 2) Fast switching speed *1 (1) 3) Fast reverse recovery
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SCT2450KE
O-247
R1102B
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SCS215AG
Abstract: No abstract text available
Text: SCS215AG SiC Schottky Barrier Diode Datasheet lOutline VR 650V IF 15A QC 23nC TO-220AC 1 (2) lFeatures (3) lInner circuit (1) 1) Shorter recovery time 2) Reduced temperature dependence (1) Cathode (2) Cathode (3) Anode 3) High-speed switching possible (2)
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SCS215AG
O-220AC
R1102B
SCS215AG
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Untitled
Abstract: No abstract text available
Text: S2206 Data Sheet N-channel SiC power MOSFET bare die VDSS 650V RDS on (Typ.) 120mW ID 29A*1 lFeatures lInner circuit (D) 1) Low on-resistance (G) Gate (D) Drain (S) Source 2) Fast switching speed 3) Fast reverse recovery (G) 4) Easy to parallel *1 Body Diode
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S2206
120mW
R1102B
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Untitled
Abstract: No abstract text available
Text: SCS240AE2 Data Sheet SiC Schottky Barrier Diode lOutline VR 650V IF 20A/40A* QC 31nC TO-247 * Per leg / Both legs (1) (2) lFeatures (3) lInner circuit 1) Shorter recovery time 2) Reduced temperature dependence (1) Anode (2) Cathode (3) Anode 3) High-speed switching possible
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SCS240AE2
0A/40A*
O-247
650th
R1102B
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Untitled
Abstract: No abstract text available
Text: S6304 Data Sheet SiC Schottky Barrier Diode Bare Die VR 1200V IF 20A*1 65nC QC lFeatures lInner circuit C 1) Shorter recovery time 2) Reduced temperature dependence (C) Cathode (A) Anode 3) High-speed switching possible (A) lConstruction Silicon carbide epitaxial planer type
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S6304
R1102B
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SCS220AG
Abstract: scs220 power must office 650 ROHM marking Rohm
Text: SCS220AG Datasheet SiC Schottky Barrier Diode lOutline VR 650V IF 20A QC 31nC TO-220AC 1 (2) lFeatures (3) lInner circuit (1) 1) Shorter recovery time 2) Reduced temperature dependence (1) Cathode (2) Cathode (3) Anode 3) High-speed switching possible (2)
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SCS220AG
O-220AC
R1102B
SCS220AG
scs220
power must office 650
ROHM marking
Rohm
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sub-d 25 polig
Abstract: sub-d 25 pin dimension
Text: 2 4 3 5 7 6 9 2 A A Einzelheit H 20:1 Detail H (20:1) ai 'ai <u -J= :□ a i 6.2 -0.25 ro c JD C :□ O B B c/ 1 r*-. s o +l i_n *— *— N I L n -n A 6.4 -0.25 11.7 ± 0.2 C C Einzelheit H Detail H Schnitt A A (20:1) Section (20:1) alle Kontakte/all contacts
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