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    R10 TRANSISTOR Search Results

    R10 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    R10 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AD780AN

    Abstract: AD680 AD780 AD780AR AD780BN AD780BR AD780CR LT1019 Ad780ar listed time AD780BRZ
    Text: 2.5 V/3.0 V High Precision Reference AD780 FEATURES FUNCTIONAL BLOCK DIAGRAM +VIN R10 R16 00841-001 Pin programmable 2.5 V or 3.0 V output Ultralow drift: 3 ppm/°C max High accuracy: 2.5 V or 3.0 V ±1 mV max Low noise: 100 nV/√Hz Noise reduction capability


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    PDF AD780 AD780 C00841 AD780AN AD680 AD780AR AD780BN AD780BR AD780CR LT1019 Ad780ar listed time AD780BRZ

    GRM32ER71H475KA88L

    Abstract: LM3431 diode ss24 GRM32RB1 2n7002k 2k UUD1H100MCL AN1764 30046 fet 2n7002K C2012X7R1A475M
    Text: National Semiconductor Application Note 1764 Allan Fisher January 10, 2008 Introduction By default, the LM3431 evaluation board has channels 1-4 enabled. To drive fewer channels, first remove the sense resistor or NPN on the channel to be disabled R10-R13 or Q2Q5 . Then refer to Table 3 and make any other required


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    PDF LM3431 R10-R13 AN-1764 GRM32ER71H475KA88L diode ss24 GRM32RB1 2n7002k 2k UUD1H100MCL AN1764 30046 fet 2n7002K C2012X7R1A475M

    BY206 diode

    Abstract: mosfet triggering circuit for inverter 12V ENERGY LIGHT CIRCUIT DIAGRAM thyristor capacitive discharge ignition xenon tube DIAC 502 TRANSISTOR tr4 ED69 diode by206 FX1589
    Text: Design Note 31 Issue 2 November 1995 Design Note 31 Issue 2 November 1995 High Voltage Generation for Xenon Tube Applications R24 T1 D4 C13 C12 C10 C11 T2 TH1 R23 D5 D6 +12V R7 C2 R10 R11 R13 R1 R4 Introduction The ignition timing lights in common use range from simple neon to complex


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    PDF FX1589, 1000V1 ZTX214C ZTX384C ZVN2110A ZTX300 BY206 diode mosfet triggering circuit for inverter 12V ENERGY LIGHT CIRCUIT DIAGRAM thyristor capacitive discharge ignition xenon tube DIAC 502 TRANSISTOR tr4 ED69 diode by206 FX1589

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet 2.5 V/3.0 V High Precision Reference AD780 FEATURES FUNCTIONAL BLOCK DIAGRAM +VIN NC 2 7 AD780 R10 R11 NC 1 6 VOUT 5 TRIM R13 Q6 Q7 R16 R5 R14 TEMP 3 R15 R4 4 GND NC = NO CONNECT 8 O/P SELECT 2.5V – NC 3.0V – GND 00841-001 Pin programmable 2.5 V or 3.0 V output


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    PDF AD780 AD780 D00841-0-12/12

    220uF

    Abstract: dual 2N3904 NPN Transistor 4k resistor 220uf, 25v electrolytic capacitor Q2 220uF 10v 220uF 10v 2N3904 capacitor c1 220uF 1k ohm resistor capacitor 220uf/35v
    Text: CPE modem 24V INPUT C2 1uF 10V 13 R1 200k 2 20 VP C4 220uF 35V CA D1 CMPSH-3 19 VL BST ILIM COMP C1 8.2nF DH 18 17 16 LX C3 0.1uF T1 1:1 Lpri = 27.2uH VP3-0084 N1A 1/2 NDS 9956A R2 22 1,2 DL VL U1 MAX1865T R10 100k GND OUT 1 POK FB B2 15 14 N1B 3,4, 9,10 11,12


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    PDF 220uF VP3-0084 MAX1865T 4700pF 500mA 2N3904 4700pFC11 220uF dual 2N3904 NPN Transistor 4k resistor 220uf, 25v electrolytic capacitor Q2 220uF 10v 220uF 10v 2N3904 capacitor c1 220uF 1k ohm resistor capacitor 220uf/35v

    capacitor 10uF 50V

    Abstract: ceramic capacitor 0.01uf ELECTROLYTIC capacitor, .10uF 50V ST232CN panasonic ceramic resonator capacitor 0.01uF 50V panasonic resistors capacitor 22uf/50v mc4004a resistor 50k
    Text: STMicroelectronics : EVALPRACTISPIN Quantity Reference 2 C1, C4 2 C11, C12 1 C2 5 C3,C5, C6, C7, C8 2 D2, D3 1 WJ1 1 JP1, JP2 1 J3 1 P1 1 Q1 1 R1 1 R2 1 R18 2 R9, R10 2 R11, R12 1 R19 1 SW1 1 U1 1 U2 1 Y1 2 Part Description 0.1uF 50V ceramic capacitor 0.01uF 50V ceramic capacitor


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    PDF RS232 SR205C104KAA SR211C103KAA UVR1H100MDD B37987F5224K054 BAT47 PTC36SAAN 2534-6002UB 2N3906 capacitor 10uF 50V ceramic capacitor 0.01uf ELECTROLYTIC capacitor, .10uF 50V ST232CN panasonic ceramic resonator capacitor 0.01uF 50V panasonic resistors capacitor 22uf/50v mc4004a resistor 50k

    capacitor 100nf 50v 0805

    Abstract: KMG 400V Nippon Chemi-Con KME fi324 Chemi-Con LXY vogt transformer NIPPON KME nippon kmg Vogt Ferrite nippon lxY
    Text: STEVAL-ISA020V1 Item 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 Reference C2,C1 C3 C4 C5,C13 C6 C8 C9,C10 C11 C12 D1 D3,D2 D5 D7 L1 Q1 R1 R3 R5 R8 R10,R9 R11 R12 R13 R14 R15 R16 R18,R17 R20 R21 T1 U1 U2 U3 Qty Variant Value


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    PDF STEVAL-ISA020V1 220uF 100pF 100nF LL4148 STPS160A BAV103 330uH capacitor 100nf 50v 0805 KMG 400V Nippon Chemi-Con KME fi324 Chemi-Con LXY vogt transformer NIPPON KME nippon kmg Vogt Ferrite nippon lxY

    Untitled

    Abstract: No abstract text available
    Text: 1422 Vishay Foil Resistors Bulk Metal Foil Technology 16 Pin Transistor Outline Hermetic Resistor Network The 16 Pin TO-8 package is suitable for ladder networks up to 12 bits and other more complicated networks. It is also a good choice when power dissipation is a consideration. This network


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    PDF 31-Jul-02

    R758

    Abstract: 78R12
    Text: 1422 Vishay Foil Resistors Bulk Metal Foil Technology 16 Pin Transistor Outline Hermetic Resistor Network The 16 Pin TO-8 package is suitable for ladder networks up to 12 bits and other more complicated networks. It is also a good choice when power dissipation is a consideration. This network


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    PDF 08-May-01 R758 78R12

    78R12

    Abstract: transistor r10 R758 0610 resistor chip
    Text: 1422 Vishay Foil Resistors Bulk Metal Foil Technology 16 Pin Transistor Outline Hermetic Resistor Network The 16 Pin TO-8 package is suitable for ladder networks up to 12 bits and other more complicated networks. It is also a good choice when power dissipation is a consideration. This network


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    PDF 08-Mar-05 78R12 transistor r10 R758 0610 resistor chip

    Untitled

    Abstract: No abstract text available
    Text: 1422 Vishay Foil Resistors Bulk Metal Foil Technology 16 Pin Transistor Outline Hermetic Resistor Network The 16 Pin TO-8 package is suitable for ladder networks up to 12 bits and other more complicated networks. It is also a good choice when power dissipation is a consideration. This network


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    PDF 08-Apr-05

    R758

    Abstract: No abstract text available
    Text: 1422 Vishay Foil Resistors Bulk Metal Foil Technology 10 Pin Transistor Outline Hermetic Resistor Network The 16 Pin TO-8 package is suitable for ladder networks up to 12 bits and other more complicated networks. It is also a good choice when power dissipation is a consideration. This


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    PDF 22-Feb-10 R758

    Untitled

    Abstract: No abstract text available
    Text: 1422 Vishay Foil Resistors Bulk Metal Foil Technology 16 Pin Transistor Outline Hermetic Resistor Network The 16 Pin TO-8 package is suitable for ladder networks up to 12 bits and other more complicated networks. It is also a good choice when power dissipation is a consideration. This network


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    PDF 18-Jul-08

    C1608X7R1H

    Abstract: C3216X5R1A475M high-voltage high-speed op-amp C1608X7R1H104K MAX8758 MAX8758EVKIT C1608X7R1H333K Step-Up Switching Regulator toshiba lcd power supply board schematic 4.5V TO 100V INPUT REGULATOR
    Text: 19-3903; Rev 0; 11/05 MAX8758 Evaluation Kit Features The MAX8758 evaluation kit EV kit is a fully assembled and tested surface-mount PC board that provides the voltages and features required for active-matrix, thin-film transistor (TFT), liquid-crystal display (LCD) applications. The EV kit contains a step-up switching regulator,


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    PDF MAX8758 MAX8758 C1608X7R1H C3216X5R1A475M high-voltage high-speed op-amp C1608X7R1H104K MAX8758EVKIT C1608X7R1H333K Step-Up Switching Regulator toshiba lcd power supply board schematic 4.5V TO 100V INPUT REGULATOR

    Untitled

    Abstract: No abstract text available
    Text: 1422 Vishay Foil Resistors Bulk Metal Foil Technology 10 Pin Transistor Outline Hermetic Resistor Network The 16 Pin TO-8 package is suitable for ladder networks up to 12 bits and other more complicated networks. It is also a good choice when power dissipation is a consideration. This


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    PDF 27-Apr-11

    ATF-10736

    Abstract: AN-G005 ATF10236 ATF-10236 ATF10136 ATF-10136 HP346A MSA-0686 TK11650U TL05
    Text: Using the ATF-10236 in Low Noise Amplifier Applications in␣ the UHF through 1.7 GHz Frequency Range Application Note 1076 Introduction GaAs FET devices are typically used in low-noise amplifiers in the microwave frequency region where silicon transistors can’t


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    PDF ATF-10236 ATF-10736 AN-G005 ATF10236 ATF10136 ATF-10136 HP346A MSA-0686 TK11650U TL05

    AP002

    Abstract: No abstract text available
    Text: AP002 Designing Battery Chargers using the AQT120 The AQT120 is a controller for implementing a constant current/constant voltage supply suitable for charging batteries to a final voltage at a fixed current. The AQT120 is intended to drive an external PNP pass transistor to implement a lowest-cost system for


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    PDF AP002 AQT120 AQT120 MMT549 CAQT120 AP002

    FMMT549

    Abstract: IRLZ34 gm100
    Text: AP002 Designing Battery Chargers using the LDS120P The LDS120P is a controller for a constant current/constant voltage supply suitable for charging batteries to a final voltage at a fixed current. The LDS120P is intended to drive an external PNP pass transistor to implement a system for charging Lithium Ion Li Ion ,


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    PDF AP002 LDS120P LDS120P FMMT549 FMMT549 IRLZ34 gm100

    Untitled

    Abstract: No abstract text available
    Text: R_10032 CA-330-11; LDMOS bias module Rev. 1.0 — 24 July 2012 Report Document information Info Content Keywords LDMOS, bias Abstract This report describes a bias module for LDMOS RF power transistors. It provides a low-noise bias supply, temperature compensation, and a very


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    PDF CA-330-11;

    transistor C456

    Abstract: microstripline FR4 AT-41511 4.1 amplifier circuit diagram 2907A PNP bipolar transistors microstripline 41511 FR4 epoxy dielectric constant 4.4 AT-41411 AT-41486
    Text: Two-Stage 800 – 1000 MHz Amplifier Using the AT-41511 Silicon Bipolar Transistor Application Note 1084 Introduction Circuit Design Commercial markets in the VHF through L band frequency range require low cost, high performance components. In many applications, such as cellular and


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    PDF AT-41511 5964-3853E transistor C456 microstripline FR4 4.1 amplifier circuit diagram 2907A PNP bipolar transistors microstripline 41511 FR4 epoxy dielectric constant 4.4 AT-41411 AT-41486

    2907A PNP bipolar transistors

    Abstract: microstripline FR4 transistor C456 AT-41511 schematic power supply circuit diagram using ic 3 AT-41486 AT-41411 schematic power supply circuit diagram using ic AT41511 Transistor z1
    Text: Two-Stage 800 – 1000 MHz Amplifier Using the AT-41511 Silicon Bipolar Transistor Application Note 1084 Introduction Commercial markets in the VHF through L band frequency range require low cost, high performance components. In many applications, such as cellular


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    PDF AT-41511 5964-3853E 2907A PNP bipolar transistors microstripline FR4 transistor C456 AT-41511 schematic power supply circuit diagram using ic 3 AT-41486 AT-41411 schematic power supply circuit diagram using ic AT41511 Transistor z1

    HCFT

    Abstract: LQ12D011 DH758 D1021 D1022 D1023 D1024 DC AC inverter
    Text: LQ12D011 TFT-LCD Module LCD Data Sheet FEATURES DESCRIPTION • Display Diagonal: 11.8" The SHARP LQ12D011 Color TFT-LCD module is a color active matrix Liquid Crystal Display LCD incorporating amorphous silicon Thin Film Transistor (TFT). The module is composed of a color TFT-LCD


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    PDF LQ12D011 LQ12D011 HCFT DH758 D1021 D1022 D1023 D1024 DC AC inverter

    CBCX69

    Abstract: CBCX68 marking code r10 surface mount diode CBCX69-16
    Text: CBCX68 SERIES NPN CBCX69 SERIES PNP SURFACE MOUNT COMPLEMENTARY SILICON SMALL SIGNAL TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CBCX68 and CBCX69 series types are complementary silicon transistors manufactured by the epitaxial planar


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    PDF CBCX68 CBCX69 OT-89 100mA 500mA CBCX68, CBCX69) marking code r10 surface mount diode CBCX69-16

    1BW TRANSISTOR

    Abstract: transistor BU 110 diode sg 69
    Text: F 200 R10 K EUPEC SEE D 34G32T7 0000244 bl3 « U P E C Thermische Eigenschaften Thermal properties Rtwc DC, pro Baustein / per module 0,088 °C/W Transistor Transistor Elektrische Eigenschaften Electrical properties VCES Maximum rated values 1000 V 200 A RthCK


    OCR Scan
    PDF 34G32T7 JD00244 34D32CI7 1BW TRANSISTOR transistor BU 110 diode sg 69