Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet 2SC5509 NPN SILICON RF TRANSISTOR R09DS0056EJ0300 Rev.3.00 Mar 5, 2013 FOR MEDIUM OUTPUT POWER, LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD M04 FEATURES • • • • • <R> Ideal for medium output power amplification
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2SC5509
R09DS0056EJ0300
2SC5509-A
2SC5509-T2
2SC5509-T2-A
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Untitled
Abstract: No abstract text available
Text: A Business Partner of Renesas Electronics Corporation. Preliminary 2SC5509 / NE663M04 Data Sheet NPN SILICON RF TRANSISTOR R09DS0056EJ0300 Rev.3.00 Mar 5, 2013 FOR MEDIUM OUTPUT POWER, LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD M04
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Original
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2SC5509
NE663M04
R09DS0056EJ0300
2SC5509
2SC5509-A
2SC5509-T2
2SC5509-T
R09DS0056EJ0300
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PDF
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