74n7
Abstract: R1766T
Text: Data Sheet NE5550234 R09DS0039EJ0300 Rev.3.00 Mar 12, 2013 Silicon Power MOS FET FEATURES • • • • • High Output Power : Pout = 33.0 dBm TYP. VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm High power added efficiency : ηadd = 68% TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm)
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NE5550234
R09DS0039EJ0300
NE5550234
NE5550234-AZ
74n7
R1766T
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Panasonic R1766
Abstract: No abstract text available
Text: A Business Partner of Renesas Electronics Corporation. Data Sheet NE5550234 R09DS0039EJ0300 Rev.3.00 Mar 12, 2013 Silicon Power MOS FET FEATURES • • • • • High Output Power : Pout = 33.0 dBm TYP. VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm
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Original
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PDF
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NE5550234
R09DS0039EJ0300
NE5550234-AZ
HS350
R09DS0039EJ0300
NE5550234
Panasonic R1766
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