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    infrared application renesas

    Abstract: HS350 marking B8 R09DS0005EJ0100
    Text: PreliminaryData Sheet NE5820M53 R09DS0005EJ0100 Rev.1.00 Jul 9, 2010 P-channel MOS Field Effect Transistor for Impedance Converter of Microphone DESCRIPTION The NE5820M53 is a P-channel silicon MOSFET designed for use as impedance converter for microphone.


    Original     		PDF NE5820M53 R09DS0005EJ0100 NE5820M53 infrared application renesas HS350 marking B8 R09DS0005EJ0100